CN1930079B - 伸长的纳米结构及其相关装置 - Google Patents

伸长的纳米结构及其相关装置 Download PDF

Info

Publication number
CN1930079B
CN1930079B CN2004800348705A CN200480034870A CN1930079B CN 1930079 B CN1930079 B CN 1930079B CN 2004800348705 A CN2004800348705 A CN 2004800348705A CN 200480034870 A CN200480034870 A CN 200480034870A CN 1930079 B CN1930079 B CN 1930079B
Authority
CN
China
Prior art keywords
substrate
catalyst particles
nanorods
dielectric layer
cavity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2004800348705A
Other languages
English (en)
Chinese (zh)
Other versions
CN1930079A (zh
Inventor
L·查卡拉科斯
J·-U·李
W·H·胡伯
R·R·科尔德曼
V·马尼
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of CN1930079A publication Critical patent/CN1930079A/zh
Application granted granted Critical
Publication of CN1930079B publication Critical patent/CN1930079B/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00Carbon; Compounds thereof
    • C01B32/90Carbides
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00Carbon; Compounds thereof
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02Pretreatment of the material to be coated
    • C23C16/0272Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C23C16/0281Deposition of sub-layers, e.g. to promote the adhesion of the main coating of metallic sub-layers
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04Coating on selected surface areas, e.g. using masks
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/12Vaporous components, e.g. vapour-liquid-solid-growth
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/36Carbides
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/62Whiskers or needles
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02Manufacture of electrodes or electrode systems
    • H01J9/022Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J23/00Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
    • B01J23/38Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of noble metals
    • B01J23/48Silver or gold
    • B01J23/52Gold
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J23/00Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
    • B01J23/70Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper
    • B01J23/74Iron group metals
    • B01J23/75Cobalt
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J23/00Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
    • B01J23/70Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper
    • B01J23/74Iron group metals
    • B01J23/755Nickel
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J27/00Catalysts comprising the elements or compounds of halogens, sulfur, selenium, tellurium, phosphorus or nitrogen; Catalysts comprising carbon compounds
    • B01J27/20Carbon compounds
    • B01J27/22Carbides
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J37/00Processes, in general, for preparing catalysts; Processes, in general, for activation of catalysts
    • B01J37/02Impregnation, coating or precipitation
    • B01J37/0215Coating
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J37/00Processes, in general, for preparing catalysts; Processes, in general, for activation of catalysts
    • B01J37/02Impregnation, coating or precipitation
    • B01J37/0238Impregnation, coating or precipitation via the gaseous phase-sublimation
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J37/00Processes, in general, for preparing catalysts; Processes, in general, for activation of catalysts
    • B01J37/08Heat treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00Electrodes common to discharge tubes
    • H01J2201/30Cold cathodes
    • H01J2201/304Field emission cathodes
    • H01J2201/30446Field emission cathodes characterised by the emitter material
    • H01J2201/30453Carbon types
    • H01J2201/30469Carbon nanotubes (CNTs)

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Nanotechnology (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Catalysts (AREA)
CN2004800348705A 2003-11-25 2004-11-16 伸长的纳米结构及其相关装置 Expired - Fee Related CN1930079B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/722,700 US20050112048A1 (en) 2003-11-25 2003-11-25 Elongated nano-structures and related devices
US10/722,700 2003-11-25
PCT/US2004/038271 WO2005051842A2 (en) 2003-11-25 2004-11-16 Elongated nano-structures and related devices

Publications (2)

Publication Number Publication Date
CN1930079A CN1930079A (zh) 2007-03-14
CN1930079B true CN1930079B (zh) 2010-06-02

Family

ID=34592043

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2004800348705A Expired - Fee Related CN1930079B (zh) 2003-11-25 2004-11-16 伸长的纳米结构及其相关装置

Country Status (6)

Country Link
US (1) US20050112048A1 (enExample)
JP (1) JP4773364B2 (enExample)
CN (1) CN1930079B (enExample)
DE (1) DE112004002299T5 (enExample)
GB (1) GB2425540B (enExample)
WO (1) WO2005051842A2 (enExample)

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6830976B2 (en) * 2001-03-02 2004-12-14 Amberwave Systems Corproation Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
US6703688B1 (en) 2001-03-02 2004-03-09 Amberwave Systems Corporation Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
AU2003247513A1 (en) 2002-06-10 2003-12-22 Amberwave Systems Corporation Growing source and drain elements by selecive epitaxy
US6982474B2 (en) 2002-06-25 2006-01-03 Amberwave Systems Corporation Reacted conductive gate electrodes
US7078276B1 (en) * 2003-01-08 2006-07-18 Kovio, Inc. Nanoparticles and method for making the same
EP1602125B1 (en) 2003-03-07 2019-06-26 Taiwan Semiconductor Manufacturing Company, Ltd. Shallow trench isolation process
US7351607B2 (en) * 2003-12-11 2008-04-01 Georgia Tech Research Corporation Large scale patterned growth of aligned one-dimensional nanostructures
US7485600B2 (en) * 2004-11-17 2009-02-03 Honda Motor Co., Ltd. Catalyst for synthesis of carbon single-walled nanotubes
US7288490B1 (en) * 2004-12-07 2007-10-30 United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration (Nasa) Increased alignment in carbon nanotube growth
US7585420B2 (en) * 2004-12-16 2009-09-08 William Marsh Rice University Carbon nanotube substrates and catalyzed hot stamp for polishing and patterning the substrates
US7422966B2 (en) 2005-05-05 2008-09-09 Micron Technology, Inc. Technique for passivation of germanium
KR101289256B1 (ko) * 2005-06-28 2013-07-24 더 보드 오브 리젠츠 오브 더 유니버시티 오브 오클라호마 탄소 나노튜브의 성장 및 수득 방법
US7326328B2 (en) * 2005-07-19 2008-02-05 General Electric Company Gated nanorod field emitter structures and associated methods of fabrication
US7279085B2 (en) 2005-07-19 2007-10-09 General Electric Company Gated nanorod field emitter structures and associated methods of fabrication
EP1750310A3 (en) * 2005-08-03 2009-07-15 Samsung Electro-Mechanics Co., Ltd. Omni-directional reflector and light emitting diode adopting the same
US20090045720A1 (en) * 2005-11-10 2009-02-19 Eun Kyung Lee Method for producing nanowires using porous glass template, and multi-probe, field emission tip and devices employing the nanowires
CN1988100B (zh) * 2005-12-20 2010-09-29 鸿富锦精密工业(深圳)有限公司 一种场发射阴极的制备方法
EP1996887A2 (en) * 2006-03-03 2008-12-03 Illuminex Corporation Heat pipe with nanotstructured wicking material
JP2009535294A (ja) * 2006-05-01 2009-10-01 矢崎総業株式会社 炭素と非炭素との組織化されたアセンブリー、およびその製造方法
KR100803194B1 (ko) * 2006-06-30 2008-02-14 삼성에스디아이 주식회사 탄소나노튜브 구조체 형성방법
KR100785347B1 (ko) 2006-07-27 2007-12-18 한국과학기술연구원 금속전극 위에서의 반도체 나노선의 정렬방법
KR100874202B1 (ko) * 2006-11-29 2008-12-15 한양대학교 산학협력단 실리사이드 촉매를 이용한 나노 와이어 제조 방법
KR100825765B1 (ko) * 2006-12-05 2008-04-29 한국전자통신연구원 산화물계 나노 구조물의 제조 방법
US9315385B2 (en) * 2006-12-22 2016-04-19 Los Alamos National Security, Llc Increasing the specific strength of spun carbon nanotube fibers
JP4751841B2 (ja) * 2007-02-05 2011-08-17 財団法人高知県産業振興センター 電界放出型電極及び電子機器
FR2915743A1 (fr) * 2007-05-02 2008-11-07 Sicat Sarl Composite de nanotubes ou nanofibres sur mousse de beta-sic
US7858506B2 (en) * 2008-06-18 2010-12-28 Micron Technology, Inc. Diodes, and methods of forming diodes
US20100047662A1 (en) * 2008-08-22 2010-02-25 Ford Global Technologies, Llc Catalyst Layers Having Thin Film Mesh Catalyst (TFMC) Supported on a Mesh Substrate and Methods of Making the Same
US8029851B2 (en) * 2008-08-29 2011-10-04 Korea University Research And Business Foundation Nanowire fabrication
US8715981B2 (en) * 2009-01-27 2014-05-06 Purdue Research Foundation Electrochemical biosensor
FR2941688B1 (fr) * 2009-01-30 2011-04-01 Commissariat Energie Atomique Procede de formation de nano-fils
DE102009060223A1 (de) * 2009-12-23 2011-06-30 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V., 80539 Konusförmige Nanostrukturen auf Substratoberflächen, insbesondere optischen Elementen, Verfahren zu deren Erzeugung sowie deren Verwendung
US9570760B2 (en) * 2010-04-29 2017-02-14 Ford Global Technologies, Llc Fuel cell electrode assembly and method of making the same
US20110143263A1 (en) * 2010-04-29 2011-06-16 Ford Global Technologies, Llc Catalyst Layer Having Thin Film Nanowire Catalyst and Electrode Assembly Employing the Same
TWI414005B (zh) * 2010-11-05 2013-11-01 Sino American Silicon Prod Inc 磊晶基板、使用該磊晶基板之半導體發光元件及其製程
CN102569025B (zh) * 2011-01-02 2014-12-24 昆山中辰矽晶有限公司 磊晶基板、使用该磊晶基板之半导体发光元件及其制程
US8623779B2 (en) 2011-02-04 2014-01-07 Ford Global Technologies, Llc Catalyst layer supported on substrate hairs of metal oxides
US8889226B2 (en) 2011-05-23 2014-11-18 GM Global Technology Operations LLC Method of bonding a metal to a substrate
CN102358610A (zh) * 2011-07-09 2012-02-22 电子科技大学 一种导电聚合物一维纳米结构阵列的制备方法
CN103779148A (zh) * 2012-10-23 2014-05-07 海洋王照明科技股份有限公司 一种场发射阴极及其制备方法
US9053890B2 (en) * 2013-08-02 2015-06-09 University Health Network Nanostructure field emission cathode structure and method for making
US10782014B2 (en) 2016-11-11 2020-09-22 Habib Technologies LLC Plasmonic energy conversion device for vapor generation
EP3933881A1 (en) 2020-06-30 2022-01-05 VEC Imaging GmbH & Co. KG X-ray source with multiple grids
US12230468B2 (en) 2022-06-30 2025-02-18 Varex Imaging Corporation X-ray system with field emitters and arc protection

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1043256C (zh) * 1996-11-05 1999-05-05 中国科学院物理研究所 一种有序排列的碳纳米管及其制备方法和专用装置
US20030087511A1 (en) * 2001-11-07 2003-05-08 Kishio Hidaka Method for fabricating electrode device

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2658839B1 (fr) * 1990-02-23 1997-06-20 Thomson Csf Procede de croissance controlee de cristaux aciculaires et application a la realisation de microcathodes a pointes.
US5157304A (en) * 1990-12-17 1992-10-20 Motorola, Inc. Field emission device display with vacuum seal
JPH0578977A (ja) * 1991-09-12 1993-03-30 Nippon Cement Co Ltd 表面被覆炭素繊維の製造方法
US5406123A (en) * 1992-06-11 1995-04-11 Engineering Research Ctr., North Carolina State Univ. Single crystal titanium nitride epitaxial on silicon
US5872422A (en) * 1995-12-20 1999-02-16 Advanced Technology Materials, Inc. Carbon fiber-based field emission devices
US5997832A (en) * 1997-03-07 1999-12-07 President And Fellows Of Harvard College Preparation of carbide nanorods
US6054801A (en) * 1998-02-27 2000-04-25 Regents, University Of California Field emission cathode fabricated from porous carbon foam material
US6255198B1 (en) * 1998-11-24 2001-07-03 North Carolina State University Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby
AU764311B2 (en) * 1999-01-12 2003-08-14 Hyperion Catalysis International Inc. Carbide and oxycarbide based compositions and nanorods
US6465132B1 (en) * 1999-07-22 2002-10-15 Agere Systems Guardian Corp. Article comprising small diameter nanowires and method for making the same
KR20010011136A (ko) * 1999-07-26 2001-02-15 정선종 나노구조를 에미터로 사용한 삼극형 전계 방출 에미터의 구조및 그 제조방법
US7196464B2 (en) * 1999-08-10 2007-03-27 Delta Optoelectronics, Inc. Light emitting cell and method for emitting light
FR2800365B1 (fr) * 1999-10-28 2003-09-26 Centre Nat Rech Scient Procede d'obtention de nanostructures a partir de composes ayant une forme cristalline hexagonale
US6376007B1 (en) * 2000-06-01 2002-04-23 Motorola, Inc. Method of marking glass
US6876724B2 (en) * 2000-10-06 2005-04-05 The University Of North Carolina - Chapel Hill Large-area individually addressable multi-beam x-ray system and method of forming same
US6440763B1 (en) * 2001-03-22 2002-08-27 The United States Of America As Represented By The Secretary Of The Navy Methods for manufacture of self-aligned integrally gated nanofilament field emitter cell and array
AU2002344814A1 (en) * 2001-06-14 2003-01-02 Hyperion Catalysis International, Inc. Field emission devices using ion bombarded carbon nanotubes
US6617283B2 (en) * 2001-06-22 2003-09-09 Ut-Battelle, Llc Method of depositing an electrically conductive oxide buffer layer on a textured substrate and articles formed therefrom
TW511108B (en) * 2001-08-13 2002-11-21 Delta Optoelectronics Inc Carbon nanotube field emission display technology
AU2002332622A1 (en) * 2001-08-24 2003-03-10 Nano-Proprietary, Inc. Catalyst for carbon nanotube growth
FR2829873B1 (fr) * 2001-09-20 2006-09-01 Thales Sa Procede de croissance localisee de nanotubes et procede de fabrication de cathode autoalignee utilisant le procede de croissance de nanotubes
US7252749B2 (en) * 2001-11-30 2007-08-07 The University Of North Carolina At Chapel Hill Deposition method for nanostructure materials
FR2832995B1 (fr) * 2001-12-04 2004-02-27 Thales Sa Procede de croissance catalytique de nanotubes ou nanofibres comprenant une barriere de diffusion de type alliage nisi
FR2848204B1 (fr) * 2002-12-09 2007-01-26 Commissariat Energie Atomique Procedes de synthese et de croissance de nanotiges d'un carbure metallique sur un substrat, substrats ainsi obtenus et leurs applications

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1043256C (zh) * 1996-11-05 1999-05-05 中国科学院物理研究所 一种有序排列的碳纳米管及其制备方法和专用装置
US20030087511A1 (en) * 2001-11-07 2003-05-08 Kishio Hidaka Method for fabricating electrode device

Also Published As

Publication number Publication date
GB2425540B (en) 2007-08-15
US20050112048A1 (en) 2005-05-26
GB0609495D0 (en) 2006-06-21
GB2425540A (en) 2006-11-01
JP4773364B2 (ja) 2011-09-14
WO2005051842A3 (en) 2006-10-26
WO2005051842A2 (en) 2005-06-09
DE112004002299T5 (de) 2006-09-28
CN1930079A (zh) 2007-03-14
JP2007516919A (ja) 2007-06-28

Similar Documents

Publication Publication Date Title
CN1930079B (zh) 伸长的纳米结构及其相关装置
JP3804594B2 (ja) 触媒担持基板およびそれを用いたカーボンナノチューブの成長方法ならびにカーボンナノチューブを用いたトランジスタ
Fan et al. Semiconductor nanowires: from self‐organization to patterned growth
Lee et al. Semiconductor nanowires: synthesis, structure and properties
US8207449B2 (en) Nano-wire electronic device
Lew et al. Template-directed vapor–liquid–solid growth of silicon nanowires
US9108850B2 (en) Preparing nanoparticles and carbon nanotubes
JP5329800B2 (ja) 触媒ナノ粒子の制御および選択的な形成
US20090317597A1 (en) Nanostructure and method for manufacturing the same
Han et al. Controlled growth of gallium nitride single-crystal nanowires using a chemical vapor deposition method
US20110097631A1 (en) Organic/inorganic composite comprising three-dimensional carbon nanotube networks, method for preparing the organic/inorganic composite and electronic device using the organic/inorganic composite
US7767185B2 (en) Method of producing a carbon nanotube and a carbon nanotube structure
Lu et al. Silicon quantum-wires arrays synthesized by chemical vapor deposition and its micro-structural properties
Yakubu et al. Graphene synthesis by chemical vapour deposition (CVD): A review on growth mechanism and techniques
Lu et al. Synthesis and characterization of well-aligned quantum silicon nanowires arrays
Li et al. Silica Particle‐Mediated Growth of Single Crystal Graphene Ribbons on Cu (111) Foil
JP2005126323A (ja) 触媒担持基板、それを用いたカーボンナノチューブの成長方法及びカーボンナノチューブを用いたトランジスタ
GB2436449A (en) Method of making a field emission device
CN115995510A (zh) 具有氧化镓纳米结构的硅晶圆器件及其制备方法、半导体器件
JP2008308381A (ja) 酸化亜鉛ナノ構造体の製造方法及びその接合方法
Tang et al. Atomic layer deposition of Al2O3 catalysts for narrow diameter distributed single-walled carbon nanotube arrays growth
Jung Controlled synthesis of carbon nanotubes using chemical vapor deposition methods
Palomino et al. Silicon nanowires as electron field emitters
Shi et al. Niraj Narasinha Kulkarni
TWI230204B (en) Method for selectively depositing nano carbon structure on silicon substrate

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20100602

Termination date: 20141116

EXPY Termination of patent right or utility model