CN1924116A - 硅晶片制造方法 - Google Patents

硅晶片制造方法 Download PDF

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CN1924116A
CN1924116A CNA2006101219238A CN200610121923A CN1924116A CN 1924116 A CN1924116 A CN 1924116A CN A2006101219238 A CNA2006101219238 A CN A2006101219238A CN 200610121923 A CN200610121923 A CN 200610121923A CN 1924116 A CN1924116 A CN 1924116A
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silicon wafer
transmission sheet
mounting face
stove
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井上和俊
和田直之
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Sumco Corp
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Sumitomo Mitsubishi Silicon Corp
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    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
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    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
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    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
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Abstract

一种制造硅晶片的方法，它利用具有只能安装晶片规定区域——包括其后面的中心位置——的安装面的传送片，将(100)面硅晶片传送到单晶片热处理装置或气相生长装置的处理炉中或从炉中传出，使晶片经受热处理或气相生长，其中<010>或<001>取向相对于传送片安装面的横向方向偏移一预定角度。

Description

硅晶片制造方法
技术领域
本发明涉及硅晶片的制造方法，它特别能减小当晶片在处理炉中加热
到较高温度时，从传送片安装面伸出的晶片部分的向下弯曲量。
背景技术
对于普通(100)面的硅晶片，具有标明<011>取向的槽位置的产品
(以下称为<011>槽产品)是主流。
近来为了提高装置的速度，开始使用旋转45°的晶片而标明<010>或
<001>取向的槽位置的产品(以下称为<010>槽产品)。
如图1所示，制造(100)面硅晶片时一般是把(100)面晶片3放在
单晶片热处理装置或气相生长装置1的处理炉2内，然后经受热处理或气相生长(见JP-A-10-294287)。
如图2所示，将晶片3送进处理炉2或从中取出是利用传送片4来进
行，此传送片具有一个安装面，它只能安装晶片3的规定区域，包括其后面的中心位置(图2中的阴影区S)。
当从传送片4的安装面伸出的晶片3的部分3a在处理炉2中被加热
到高温时，它们由于进一步增加的应力(如无载重量等)而热变形，因而可能引起这些部分从传送片4向下弯曲的现象。
由于晶片3的这些部分从传送片4向下弯曲，当被处理晶片3从处理
炉2向外传送时，这些弯曲部分3a可能碰上安装在处理炉周围的元件(如侧支座等)而损坏晶片。
发明内容
本发明人曾研究过从传送片伸出的晶片各部分的弯曲量，发现传送片内安装面的横向方向和硅晶片结晶取向之间的相互关系对弯曲量影响很大。
因此，本发明的目的是提供一种硅晶片的制造方法，它可通过将晶片的预定结晶取向相对传送片安装面的横向方向作适当偏移而减小从传送片安装面伸出的各部分(100)面硅晶片的向下弯曲，以避免晶片在从处理炉中传出时被损坏。
按照本发明，提供了一种制造硅晶片的方法，它利用具有只能安装晶片规定区域(包括其后面的中心位置)的安装面的传送片，将(100)面硅晶片传送到单晶片热处理装置或气相生长装置的处理炉中或从炉中传出，使晶片经受热处理或气相生长，其中<010>或<001>取向相对于传送片安装面的横向方向偏移一个预定角度。
在本发明的一个优选实施例中，这个预定角度不小于25°，同时/或者硅晶片槽位置为<010>或<001>取向。
按照本发明，从传送片安装面伸出的各部分(100)面硅晶片在高温下的向下弯曲量，可通过把晶片预定结晶取向相对于传送片安装面的横向方向作适当偏移而减小，以防止晶片从处理炉向外传送时被损坏。
附图说明
现在参照附图对本发明加以说明，其中：
图1是适合进行按本发明的硅晶片制造过程的气相生长装置示意图；
图2是将已在处理炉中加热的晶片放到传送片上，使得<010>槽产品的<011>取向和传送片的横向方向d适合的状态，图中(a)为平面视图，(b)为侧视图；
图3说明按本发明的制造过程，并显示将放在传送片安装面上的硅晶片传送到气相生长装置内的状态；
图4是将已在处理炉中加热的晶片放到传送片上，使得<010>槽产品的<010>取向和传送片的横向方向d适合的状态。
具体实施方式
图1是适合进行按本发明的硅晶片制造过程的气相生长装置，图3显示将放在传送片安装面上的硅晶片传送到气相生长装置的处理炉内的状态。
如图1所示，气相生长装置主要包括用来在硅晶片3上形成单晶外延生长薄膜的处理炉(反应炉)2，用来在薄膜形成中加热晶片3的加热装置5(如灯等)，安置在处理炉2内并在薄膜形成中支撑晶片3的基座6，将晶片3传送至处理炉2内或从中取出的传送片4，用来通过提升操作引导晶片3从传送片4至基座6的运动的提升销7。
本发明的主要特点是，(100)面硅晶片的预定结晶取向相对于传送片安装面的横向方向作适当偏移。更具体地说，<010>或<001>取向相对于传送片安装面的横向方向偏移一个预定角(最好不小于25°)，如图3所示。利用这个特点，从传送片安装面伸出的晶片部分在较高温度时的向下弯曲量可以减小，以防止被处理晶片在从反应炉传出时遭到损坏。
本发明人有这样的体验：当被处理晶片放在传送片上并从处理炉向外传送时，从传送片伸出的晶片部分可能从传送片向下弯曲，也可能不向下弯曲。目前本发明人经进一步研究发现，只要在传送片安装面的伸展方向和晶片规定结晶取向之间设置一个适当大小的角度就足够了，这构成本发明的内容。
图2(a)和(b)表示将已在处理炉中加热的晶片放到传送片上，使得<010>槽产品的<011>取向和传送片的横向方向d适合的状态，而图4(a)和(b)表示将已在处理炉中加热的晶片放到传送片上，使得<010>槽产品的<010>取向和传送片的横向方向d适合的状态。图2(a)和4(a)各为平面视图，而图2(b)和4(b)各为侧视图。另外，图2(a)和4(a)中的“上”和“下”分别表示当晶片热变形成弯曲波浪形时的安装位置A和谷位置B。
示于图2(a)安置状态的<011>槽产品的侧面形状使得位于安装面上的晶片两端向下弯曲并处在安装面上，如图2(b)所示，因而从传送片安装面伸出的晶片部分不从传送片向下弯曲。
另一方面，图4(a)安置状态的<010>槽产品的侧面形状使得位于安装面上的晶片两端从安装面向上弯曲，如图4(b)所示。在这种情况下，位于从传送片安装面伸出的晶片部分的端位置和中心位置(见图4(b))之间的每一中间部分(相当于谷位置B)是从传送片4向下弯曲。图4(b)中各接触部分表示晶片3的弯曲部分与传送片4侧边缘相接触。
因此，在本发明中，(100)硅晶片的预定结晶取向与传送片安装面的横向方向是适当偏移的，更具体地说，<010>或<011>取向相对于传送片安装面的横向方向偏移预定的角度θ，如图3所示，这样就可以防止形成使位于安装面的晶片两端向上弯曲(如图4(b)所示)的侧面形状。也就是说，可以使从传送片安装面伸出的晶片部分的向下弯曲量很小(例如不大于5mm)。
虽然上面是对一个实施例所作的说明，但在本发明范围内可以作各种更改。
按照本发明，在较高温度下从传送片安装面伸出的(100)面硅晶片部分的向下弯曲量，可以通过使晶片的预定结晶取向与传送片安装面横向方向充分偏移而减小，从而防止晶片在从处理炉向外传送时被损坏。

Claims (3)

1.一种制造硅晶片的方法，它利用具有只能安装晶片规定区域——包括其后面的中心位置——的安装面的传送片，将(100)面硅晶片传送到单晶片热处理装置或气相生长装置的处理炉中或从炉中传出，使晶片经受热处理或气相生长，其中<010>或<001>取向相对于传送片安装面的横向方向偏移一预定角度。
2.如权利要求1的硅晶片制造过程，其中预定角不小于25°。
3.如权利要求1或2的硅晶片制造过程，其中硅晶片具有<010>或<001>取向的槽位置。
CN2006101219238A 2005-08-26 2006-08-28 硅晶片制造方法 Active CN1924116B (zh)

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CN104752277A (zh) * 2013-12-27 2015-07-01 胜高股份有限公司 外延生长装置
CN112216636A (zh) * 2020-08-27 2021-01-12 西安奕斯伟硅片技术有限公司 一种晶圆外延反应设备

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CN110911325B (zh) * 2019-11-29 2024-03-26 西安奕斯伟材料科技股份有限公司 一种晶圆传送叶片
CN113463181B (zh) * 2021-09-03 2021-11-02 江苏矽时代材料科技有限公司 一种半导体单晶硅生长装置

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CN104752277A (zh) * 2013-12-27 2015-07-01 胜高股份有限公司 外延生长装置
CN104752277B (zh) * 2013-12-27 2017-12-22 胜高股份有限公司 外延生长装置
CN112216636A (zh) * 2020-08-27 2021-01-12 西安奕斯伟硅片技术有限公司 一种晶圆外延反应设备

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TWI335944B (en) 2011-01-11
JP2007059740A (ja) 2007-03-08
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CN1924116B (zh) 2011-06-08
TW200708638A (en) 2007-03-01
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US7820554B2 (en) 2010-10-26
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