CN1921311A - 具有保护电路的半导体装置 - Google Patents
具有保护电路的半导体装置 Download PDFInfo
- Publication number
- CN1921311A CN1921311A CN 200610007383 CN200610007383A CN1921311A CN 1921311 A CN1921311 A CN 1921311A CN 200610007383 CN200610007383 CN 200610007383 CN 200610007383 A CN200610007383 A CN 200610007383A CN 1921311 A CN1921311 A CN 1921311A
- Authority
- CN
- China
- Prior art keywords
- resistor
- voltage
- semiconductor
- comparator
- drive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
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- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Power Conversion In General (AREA)
- Inverter Devices (AREA)
Abstract
Description
Claims (21)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005245233A JP4862319B2 (ja) | 2005-08-26 | 2005-08-26 | 保護回路を備えた半導体装置 |
JP2005245233 | 2005-08-26 | ||
JP2005-245233 | 2005-08-26 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1921311A true CN1921311A (zh) | 2007-02-28 |
CN1921311B CN1921311B (zh) | 2010-05-12 |
Family
ID=37778921
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2006100073830A Expired - Fee Related CN1921311B (zh) | 2005-08-26 | 2006-02-13 | 具有保护电路的半导体装置 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP4862319B2 (zh) |
CN (1) | CN1921311B (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5349817B2 (ja) * | 2008-03-19 | 2013-11-20 | セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー | 保護回路、半導体装置、電気機器 |
JP5455670B2 (ja) * | 2010-01-18 | 2014-03-26 | 東芝三菱電機産業システム株式会社 | 3レベル電力変換装置 |
JP6696334B2 (ja) | 2016-07-11 | 2020-05-20 | 株式会社デンソー | 点火装置 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6285671A (ja) * | 1985-10-11 | 1987-04-20 | Fuji Xerox Co Ltd | スイツチング式電源装置 |
JPH01186200A (ja) * | 1988-01-20 | 1989-07-25 | Mitsubishi Electric Corp | 車両用交流発電機の制御装置 |
JPH01212365A (ja) * | 1988-02-19 | 1989-08-25 | Nec Ic Microcomput Syst Ltd | 電源レベル検出回路 |
JP2676762B2 (ja) * | 1988-02-25 | 1997-11-17 | 株式会社デンソー | 電力用半導体装置 |
JP2888618B2 (ja) * | 1990-08-24 | 1999-05-10 | 株式会社東芝 | 電圧検出回路及びこれを備えたicカード |
JP2696808B2 (ja) * | 1992-11-30 | 1998-01-14 | 関西日本電気株式会社 | 過熱検出回路 |
JP3314696B2 (ja) * | 1997-10-27 | 2002-08-12 | コーデンシ株式会社 | 電源電圧検出回路 |
JP2002280842A (ja) * | 2001-03-21 | 2002-09-27 | Hitachi Ltd | 電力増幅器モジュール |
JP2004047798A (ja) * | 2002-07-12 | 2004-02-12 | Renesas Technology Corp | 半導体集積回路 |
JP3788616B2 (ja) * | 2003-04-02 | 2006-06-21 | ローム株式会社 | 電圧検出回路 |
DE10342057B4 (de) * | 2003-09-11 | 2005-10-20 | Infineon Technologies Ag | Halbleiter-Schaltungsanordnung und Continuous-Time-Sigma-Delta-Modulatorschaltung |
US7310213B2 (en) * | 2003-09-26 | 2007-12-18 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device provided with overheat protection circuit and electronic circuit using the same |
-
2005
- 2005-08-26 JP JP2005245233A patent/JP4862319B2/ja active Active
-
2006
- 2006-02-13 CN CN2006100073830A patent/CN1921311B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN1921311B (zh) | 2010-05-12 |
JP4862319B2 (ja) | 2012-01-25 |
JP2007059738A (ja) | 2007-03-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: HITACHI POWER SEMICONDUCTOR DEVICE, LTD. Free format text: FORMER OWNER: HITACHI,LTD. Effective date: 20140728 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20140728 Address after: Ibaraki Patentee after: HITACHI POWER SEMICONDUCTOR DEVICE, LTD. Address before: Tokyo, Japan, Japan Patentee before: Hitachi Ltd. |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100512 Termination date: 20180213 |
|
CF01 | Termination of patent right due to non-payment of annual fee |