CN1909367A - Ceramic packaging piece for crystal oscillator and its preparation method - Google Patents
Ceramic packaging piece for crystal oscillator and its preparation method Download PDFInfo
- Publication number
- CN1909367A CN1909367A CNA2005100873812A CN200510087381A CN1909367A CN 1909367 A CN1909367 A CN 1909367A CN A2005100873812 A CNA2005100873812 A CN A2005100873812A CN 200510087381 A CN200510087381 A CN 200510087381A CN 1909367 A CN1909367 A CN 1909367A
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- bottom plate
- terminal
- crystal oscillator
- internal terminal
- ceramic package
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
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- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The invention relates to a ceramic packing element of crystal vibrator and a relative preparation, wherein said invention uses adhere-plate method to replace traditional method; and it wires on the bottom plate; the bottom plate has internal and external terminals and the electric connection between the internal and external terminals; the crystal chip via conductive pastern is adhered on the internal terminal on the bottom plate; the bottom plate is used as base to support crystal chip to input and output the signal; the packing cover is a hollow chamber, as ceramic cover and metal cover (as kovar alloy); when packing, the cover is reversed clamped on the bottom plate, via welded, to form the sealing chamber in which, the crystal vibrates.
Description
Technical field
The present invention relates to be equipped with ceramic package as a kind of crystal oscillator of frequency generator and frequency regulator and preparation method thereof.
Background technology
Because the continuous development of mobile phone, static digital camera, PC mainboard, notebook computer and video-game, double-digit growth can appear in the demand expectation of crystal oscillator.But because the lamination of traditional ceramics pedestal is total to burning technology and complicated design, as Fig. 1, make that the production cost of base of ceramic is high always, and output also is subjected to the restriction of technology, equipment each side, can not be satisfied with the growing market demand far away, therefore seek a kind of simple method and replace present design, manufacture method extremely urgent, the present invention arises at the historic moment under this market demand.
Summary of the invention
The purpose of this invention is to provide ceramic package of a kind of crystal oscillator and preparation method thereof, its meaning is to enhance productivity, reduce production costs, and satisfies the growing market demand biglyyer.
Above-mentioned purpose of the present invention adopts following technical scheme to be achieved:
The ceramic package of crystal oscillator is characterized in that: comprising:
The bottom plate has internal terminal and outside terminal, and internal terminal is electrically connected to outside terminal,
Lid is located immediately on the bottom plate with " upside-down mounting " form, and described lid is pottery or metal or kovar alloy, and inside is the cavity that plays sealing and hold the wafer double action.
According to the present invention, inside and outside terminal of bottom plate and be electrically connected material is the W that burns altogether, or the Ag or the Ag/Pd that adopt thick film technology to form.
According to the present invention, internal terminal is formed on the bottom plate with the Ag of 40 μ m-50 μ m print thickness or the form of Ag/Pd, and Gold plated Layer is arranged at its top.
According to the present invention, the metallization wiring is arranged on the bottom plate, the bottom plate have internal terminal and outside terminal and in electrical connection between the external terminal, wafer is bonded on the internal terminal of bottom plate by conducting resinl, the bottom plate is as a bearing wafer and realize the matrix of the input and the output of signal.
According to the present invention, the internal terminal on the bottom plate has makes wafer and bottom plate keep the height of certain space length, and this spatial altitude can directly print thicker conductive layer, is perhaps supported and is formed by other metal or nonmetallic pad.
According to the present invention, electrically connect as that other via connects or be the inner via hole connection on the bottom plate.
According to the present invention, ceramic cap is made of two-layer, around be coated with one the circle low-melting-point glass.
According to the present invention, ceramic cap is made of two-layer, is sintering lamination in air atmosphere, around be coated with low-melting-point glass.
According to the present invention, crown cap is by one time punching molded lid, is packaged as a whole with metallized in advance bottom plate all around.
Be printed with the metal circular layer around the upper surface of bottom plate, and the becket laminar surface has Gold plated Layer, becket is welded on the bottom plate.
The preparation method of the ceramic package of crystal oscillator, in it is characterized in that having, the bottom plate of external terminal and electrical connection thereof is an individual layer, for adopting non-methods of burning metal altogether such as thick film to realize the metallization of pottery, comprise and adopt the bottom plate, have internal terminal and outside terminal, and internal terminal is electrically connected to outside terminal, lid, be located immediately on the bottom plate with " upside-down mounting " form, described lid is pottery or metal alloy, inside is the cavity that plays sealing and hold the wafer double action, in the described bottom plate, outside terminal and electrical connection material thereof, be the W that burns altogether, or the Ag or the Ag/Pd that adopt thick film technology to form, internal terminal is formed on the bottom plate with the Ag of 40 μ m-50 μ m print thickness or the form of Ag/Pd, Gold plated Layer is arranged at its top, the metallization wiring is arranged on the bottom plate, the bottom plate has the electrical connection between internal terminal and outside terminal and the interior external terminal, wafer is bonded on the internal terminal of bottom plate by conducting resinl, the bottom plate is as a bearing wafer and realize the matrix of the input and the output of signal.
Said method of the present invention has solved the problem of the easy oxidation of common burning metal, the reproducibility of the common burning porcelain sintering that solves and this big contradiction of oxidizability of binder removal, the investment of production equipment aspect has also significantly reduced, and binder removal and sintering can carry out simultaneously, has not had the expensive problem of reducing atmosphere stove.
On the other hand, based on the consideration of its electric property.In general, at high frequency, high performance electronic package assembling, the parallel path that is positioned at many vias of multilager base plate will amplify leakage current.Ideally, via count is few more, just can reduce parasitic capacitance and the total leakage current do not expected more.The present invention directly designs the internal terminal with certain altitude on the bottom plate, removed the buffering thin slice on the base of ceramic traditional design, also just reduce the via on the buffering thin slice, thereby avoided the problem of parallel electrically conductive path electric leakage, strengthened the functional reliability of high-frequency signal net.
The third aspect, " hat type " design of lid make it form the useful space of wafer vibration in the sealing of bottom plate.Owing to do not need metallization, can adopt the lamination sintering method of conventional ceramic, sintering in air atmosphere can improve the air-tightness of encapsulation and the outward appearance fineness of pottery effectively.In addition, low-melting seal glass is adopted in the periphery of lid, guarantees the height uniformity when fusing, for the air-tightness that encapsulates has improved assurance.
Description of drawings
Fig. 1 is traditional SMD multi-layer ceramics enclosure base structural representation
The SMD base of ceramic structural representation of crown cap, inner via hole that Fig. 2 adopts for the present invention
The SMD base of ceramic structural representation of ceramic cap, inner via hole that Fig. 3 adopts for the present invention
The SMD base of ceramic structural representation of the crown cap that Fig. 4 adopts for the present invention, inner via hole and band support slice
The SMD base of ceramic structural representation of the ceramic cap that Fig. 5 adopts for the present invention, inner via hole and band support slice
The SMD base of ceramic structural representation of ceramic cap, other via that Fig. 6 adopts for the present invention
Fig. 7 is SMD base of ceramic ceramic cover plate structural representation
Fig. 8, Fig. 9 are the SMD base of ceramic bottom of inner via hole plate front metal wiring schematic diagram
Figure 10 is the SMD base of ceramic bottom of an other via plate front metal wiring schematic diagram
Figure 11 is SMD base of ceramic bottom plate reverse side metal line schematic diagram
Embodiment:
Describe the preferred embodiments of the present invention in detail below in conjunction with accompanying drawing.Fig. 1 shows traditional SMD ceramic packaging structure, and 11 is bottom, and 12 and 12 ' is the buffering thin slice, and 13 and 13 ' for to cover support slice, and 14 and 14 ' is becket, and 15 is top cover, and 16 is wafer.
Fig. 2, Fig. 3, Fig. 4, Fig. 5 and Fig. 6 show four kinds of forms that the present invention specifically is used for the ceramic package pedestal of crystal oscillator.21 is the bottom plate among Fig. 2, and 22 is crown cap, and 23 is wafer, 24 and 24` be internal terminal, 25 and 25` be outside terminal, 26 and 26` be via, 27 and 27` be conducting resinl, 28 and 28` be the weld metal layers of crown cap and bottom plate.31 is the bottom plate among Fig. 3,32 and 32` be ceramic cap, 33 is wafer, 34 and 34` be internal terminal, 35 and 35` be outside terminal, 36 and 36` be via, 37 and 37` be conducting resinl, 38 and 38` be seal glass.41 is the bottom plate among Fig. 4, and 42 is crown cap, and 43 is wafer, 44 and 44` be internal terminal, 45 and 45` be outside terminal, 46 and 46` be via, 47 and 47` be conducting resinl, 48 and 48` be the weld layer of crown cap and bottom plate, 49 and 49` be metal or nonmetal support slice.51 is the bottom plate among Fig. 5,52 and 52` be ceramic cap, 53 is wafer, 54 and 54` be internal terminal, 55 and 55` be outside terminal, 56 and 56` be via, 57 and 57` be conducting resinl, 58 and 58` be seal glass, 59 and 59` be metal or nonmetal support slice.61 is the bottom plate among Fig. 6,62 and 62` be ceramic cap, 63 is wafer, 64 and 64` be internal terminal, 65 and 65` be outside terminal, 66 and 66` be via, 67 and 67` be conducting resinl, 68 and 68` be seal glass.
Crystal oscillator ceramic packaging of the present invention provides a kind of structure, and with respect to prior art, it not only can simplify common burning production technology, and can reduce the quantity of the ceramic sheet that piles up, thereby has reduced the thickness of whole encapsulation.For this purpose, the invention provides five kinds of different structures, it has simplified ceramet of the prior art burning technology altogether, has removed buffering thin slice and lid support slice.To further describe this structure of the present invention below.
With reference to Fig. 2, ceramic packaging of the present invention comprises bottom plate 21, is positioned at nethermost part, this bottom plate 21 is forms of ceramic substrate, and side and downside have internal terminal 24 thereon, 24` and outside terminal 25,25`, internal terminal 24,24` is to be electrically connected 26, and 26` is to outside terminal 25,25`, and internal terminal 24,24` is formed on the bottom plate 21 with the Ag of about 40 μ m-50 μ m print thickness or the form of Ag/Pd, and its top is gold-plated again.Internal terminal 24, the thickness of 24` must be guaranteed, just can make 23 effectively vibrations of wafer.
The height of internal terminal can realize that also as Fig. 4 and Fig. 5, the requirement of printing like this about thickness 50 μ m just can correspondingly reduce by support slice, and this support slice can be by metal or nonmetal making.
Inside and outside terminal is to adopt the non-technology print that burns altogether on bottom plate 21, owing to non-burning altogether can not considered the inconsistent problem that causes bottom slab warping distortion of the pottery and the percent of firing shrinkage of metal paste, so, when sintering, can ignore pottery and generally the flexural deformation of the crystal oscillator ceramic packaging that cause inconsistent with thermal expansion metal coefficient (CET) as long as print thickness is guaranteed.
Owing to do not design pottery buffering thin slice in addition; bottom plate 21 must have the thickness of about 0.6mm, and this highly enough wafer 23 carries out stable vibration and make bottom plate 21 absorb the external impact that is applied on the wafer 23 to a certain extent protecting wafer 23.
Correspondingly, the bottom plate can carry out two kinds of circuit design, and as Fig. 8, Fig. 9 and shown in Figure 10, promptly the via of inside and outside terminal can be designed as inner via hole, and package structure such as Fig. 2, Fig. 3, Fig. 4 and Fig. 5 also can be designed as other via, as Fig. 6.When being designed to inner via hole, require to control better the percent of firing shrinkage of grout metal, in order to avoid the shrinkage of metal and substrate differs too big and cracking or come off the air-tightness of assurance packaging part when burning till.
Lid of the present invention is " hat type " design, and the height of the about 0.3mm of " shade " design makes caping and bottom plate that certain clearance be arranged, and guarantees that wafer can effectively vibrate.
Lid can be one time punching molded metal, the alloy (as the kovar alloy) that comes out, and as Fig. 2 and Fig. 4, also can be pottery, as Fig. 3, Fig. 5 and Fig. 6.
Ceramic cap is two-layer design, as Fig. 7, does not have the metallization wiring, can carry out sintering in air atmosphere behind the lamination, has avoided the problem of the easy oxidation of common burning metal.
The seal glass of the about 0.2mm thickness of " shade " coating one circle of ceramic cap, sealing-in only need be heated to the softening temperature of glass and just can finish, and utilize the surface tension of melten glass, glass in height can be consistent automatically, so both guarantee the evenness of ceramic packaging, guaranteed the air-tightness of encapsulation again.
Material selection metal alloy as operculum, then the bottom plate will be changed when design accordingly, promptly around the upper surface of bottom plate, to print the layer of metal ring, as Fig. 8, and require the becket surface gold-plating to form Gold plated Layer, could guarantee that like this becket can be welded on the bottom plate well, realize the good air-tightness sealing-in.
As mentioned above, the present invention has simplified the production technology of ceramic packaging, has reduced the requirement of production equipment, is more suitable in requirements of mass production.
The present invention has also minimized ceramic packaging, has reduced the buffering thin slice of close bottom plate, and has realized four kinds of practical designs, has enriched the design form of SMD ceramic packaging, satisfies the needs of different function different frequencies better, and has reduced production cost.
Claims (1)
- A kind of ceramic package of crystal oscillator is characterized in that: comprising:The bottom plate have internal terminal and outside terminal, and internal terminal is electrically connected to outside terminal, lid, be located immediately on the bottom plate with " upside-down mounting " form, described lid is pottery or metal or kovar alloy, and inside is the cavity that plays sealing and hold the wafer double action.The ceramic package of a kind of crystal oscillator according to claim 1 is characterized in that: inside and outside terminal of bottom plate and be electrically connected material is the W that burns altogether, or the Ag or the Ag/Pd that adopt thick film technology to form.The ceramic package of a kind of crystal oscillator according to claim 1 is characterized in that: internal terminal is formed on the bottom plate with the Ag of 40 μ m-50 μ m print thickness or the form of Ag/Pd, and Gold plated Layer is arranged at its top.The ceramic package of a kind of crystal oscillator according to claim 1, it is characterized in that: the metallization wiring is arranged on the bottom plate, the bottom plate has the electrical connection between internal terminal and outside terminal and the interior external terminal, wafer is bonded on the internal terminal of bottom plate by conducting resinl, the bottom plate is as a bearing wafer and realize the matrix of the input and the output of signal.Ceramic package according to claim 1 or 2 or 3 or 4 described a kind of crystal oscillators, it is characterized in that: the internal terminal on the bottom plate has makes wafer and bottom plate keep the height of certain space length, this highly directly type metal slurry formation is perhaps formed by other metal or nonmetallic support slice.The ceramic package of a kind of crystal oscillator according to claim 5 is characterized in that: electrically connect as that other via connects or be the inner via hole connection on the bottom plate.The ceramic package of a kind of crystal oscillator according to claim 6 is characterized in that: ceramic cap is made of two-layer, is sintering lamination in air atmosphere, around be coated with low-melting-point glass.The ceramic package of a kind of crystal oscillator according to claim 7 is characterized in that: crown cap is for by one time punching molded lid, is packaged as a whole with metallized in advance bottom plate all around.The ceramic package of a kind of crystal oscillator according to claim 8 is characterized in that: be printed with the metal circular layer around the upper surface of bottom plate, and the becket laminar surface has Gold plated Layer, becket is welded on the bottom plate.A kind of preparation method of ceramic package of crystal oscillator, in it is characterized in that having, the bottom plate of external terminal and electrical connection thereof is an individual layer, for adopting non-methods of burning metal altogether such as thick film to realize the metallization of pottery, comprise and adopt the bottom plate, have internal terminal and outside terminal, and internal terminal is electrically connected to outside terminal, lid, be located immediately on the bottom plate with " upside-down mounting " form, described lid is pottery or metal alloy, inside is the cavity that plays sealing and hold the wafer double action, in the described bottom plate, outside terminal and electrical connection material thereof, be the W that burns altogether, or the Ag or the Ag/Pd that adopt thick film technology to form, internal terminal is formed on the bottom plate with the Ag of 40 μ m-50 μ m print thickness or the form of Ag/Pd, Gold plated Layer is arranged at its top, the metallization wiring is arranged on the bottom plate, the bottom plate has the electrical connection between internal terminal and outside terminal and the interior external terminal, wafer is bonded on the internal terminal of bottom plate by conducting resinl, the bottom plate is as a bearing wafer and realize the matrix of the input and the output of signal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2005100873812A CN1909367B (en) | 2005-08-02 | 2005-08-02 | Ceramic packaging piece for crystal oscillator and its preparation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2005100873812A CN1909367B (en) | 2005-08-02 | 2005-08-02 | Ceramic packaging piece for crystal oscillator and its preparation method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1909367A true CN1909367A (en) | 2007-02-07 |
| CN1909367B CN1909367B (en) | 2011-11-23 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2005100873812A Expired - Fee Related CN1909367B (en) | 2005-08-02 | 2005-08-02 | Ceramic packaging piece for crystal oscillator and its preparation method |
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| Country | Link |
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| CN (1) | CN1909367B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101651450B (en) * | 2009-08-31 | 2012-05-23 | 珠海粤科京华电子陶瓷有限公司 | Method for preparing quartz crystal devices by laser soldering seal |
| CN102571026A (en) * | 2012-02-12 | 2012-07-11 | 广东中晶电子有限公司 | Ceramic base packaging structure of patch-type crystal oscillator and production method thereof |
| CN102751247A (en) * | 2011-04-21 | 2012-10-24 | 晶越科技股份有限公司 | High-compactness low-temperature cofired ceramic package structure and ceramic material thereof |
| CN103928447A (en) * | 2013-01-14 | 2014-07-16 | 内蒙航天动力机械测试所 | Large-power full-airtight semiconductor module packaging structure |
| CN107634733A (en) * | 2017-09-27 | 2018-01-26 | 合肥晶威特电子有限责任公司 | A kind of quartz-crystal resonator and its processing method |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100476564B1 (en) * | 2003-01-21 | 2005-03-18 | 삼성전기주식회사 | ceramic package of crystal oscillator |
| CN2819647Y (en) * | 2005-08-02 | 2006-09-20 | 珠海粤科清华电子陶瓷有限公司 | Ceramic sealer of crystal oscillator |
-
2005
- 2005-08-02 CN CN2005100873812A patent/CN1909367B/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101651450B (en) * | 2009-08-31 | 2012-05-23 | 珠海粤科京华电子陶瓷有限公司 | Method for preparing quartz crystal devices by laser soldering seal |
| CN102751247A (en) * | 2011-04-21 | 2012-10-24 | 晶越科技股份有限公司 | High-compactness low-temperature cofired ceramic package structure and ceramic material thereof |
| CN102571026A (en) * | 2012-02-12 | 2012-07-11 | 广东中晶电子有限公司 | Ceramic base packaging structure of patch-type crystal oscillator and production method thereof |
| CN103928447A (en) * | 2013-01-14 | 2014-07-16 | 内蒙航天动力机械测试所 | Large-power full-airtight semiconductor module packaging structure |
| CN103928447B (en) * | 2013-01-14 | 2016-09-28 | 内蒙航天动力机械测试所 | A kind of high-power complete airtight semiconductor module encapsulating structure |
| CN107634733A (en) * | 2017-09-27 | 2018-01-26 | 合肥晶威特电子有限责任公司 | A kind of quartz-crystal resonator and its processing method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1909367B (en) | 2011-11-23 |
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Granted publication date: 20111123 Termination date: 20200802 |
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