CN1909308A - Solid batten laser for semiconductor single-side pumping - Google Patents
Solid batten laser for semiconductor single-side pumping Download PDFInfo
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- CN1909308A CN1909308A CN 200610030005 CN200610030005A CN1909308A CN 1909308 A CN1909308 A CN 1909308A CN 200610030005 CN200610030005 CN 200610030005 CN 200610030005 A CN200610030005 A CN 200610030005A CN 1909308 A CN1909308 A CN 1909308A
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Abstract
The invention relates to a solid plate laser of semi-conductor single pump, which comprises: a plate increment medium; and the invention is characterized in that: using the plate increment medium as center, while its length direction is back chamber mirror and reflective-variable output mirror; at one side of said plate increment medium, there is semi-conductor laser array and whole lens, while another side surface is adhered with one corner reflector; the upper and lower surfaces of medium are adhered with micro channel cooler; the resonance chamber of laser is mixed chamber, whose thickness direction is horizontal, and uses reflective-variable non-stable chamber. The invention has high-quality laser output, with simple structure.
Description
Technical field
The present invention relates to the solid batten laser of a kind of all solid state laser, particularly a kind of semiconductor single-side pumping.
Background technology
Beam quality and efficient are two most important parameters that characterize a laser performance.A key factor that influences the solid state laser beam quality is the inhomogeneous of pumping.Obtain pump light distribution relatively uniformly at present and mainly contain following several method:
One) is the mode that adopts the semiconductor surface pumping, pump light distributes though this mode of face pumping can obtain relatively uniformly, and in order to guarantee certain efficient, the size of pumping direction top bars is bigger usually usually, be easy to generate the high-rder mode vibration, thereby beam quality is descended.
Two) pump light is propagated along " it " font light path in crystal, and this situation parasitic oscillation is more serious, causes decrease in efficiency.
Three) pump light distributes to take the angled incident of pump light and crystal to obtain relatively uniformly, such as the angle pump mode, the mode of the inclination pumping of perhaps adopting in the disk laser, but to obtain high power output, the coupled system more complicated of pump light, and processing request is than higher.
Four) adopting the bilateral pumping is pump mode relatively more commonly used, and there is the contradiction of pumping homogeneity and pumping efficiency in this pump mode, promptly to obtain uniform pump light and distribute, and be cost to sacrifice pumping efficiency.
Five) the good and pump mode that pumping efficiency is high of a kind of pumping homogeneity is to adopt the end pumping structure, but the pump light orthopedic systems more complicated of this pumping configuration.
In a word, more than several pump modes all be difficult to obtaining to obtain the output of high efficiency high power under the situation of high light beam quality, perhaps structure more complicated, cost is than higher.
Summary of the invention
The object of the present invention is to provide a kind of solid batten laser of semiconductor single-side pumping, it can obtain the output of high light beam quality laser, can keep high efficiency again, can realize high power output; And has an advantage simple in structure, compact and that easily realize.
Technical solution of the present invention is as follows:
A kind of solid batten laser of semiconductor single-side pumping, comprise the lath gain media, be characterised in that it constitutes: with described lath gain media is the center, length direction at this lath gain media is respectively Effect of Back-Cavity Mirror and reflectivity-variable outgoing mirror, in side of described lath gain media is semiconductor laser array and shaping lens thereof, the another side angle reflector that is sticked is at described lath gain media two big faces microchannel cooling that is sticked up and down.
Described lath gain media be thickness less than 2mm, the flakiness ratio in cross section is greater than 2 laser crystal or laser glass lath.
Described angle reflector cross section is an isosceles triangle, and drift angle is an acute angle, the film that is all-trans of two big sides and two end face plating pumping laser wavelength.
The length direction of described lath gain media is respectively an Effect of Back-Cavity Mirror) and reflectivity-variable outgoing mirror formation resonant cavity, its thickness direction is average chamber, horizontal direction is that reflectivity-variable is just propping up unsteady cavity.
The reflectivity of described reflectivity-variable outgoing mirror is a constant on thickness direction, and the Width reflectivity is distributed as Gauss or this distribution of superelevation.
Described semiconductor laser array is the individual layer linear array structure, or multi-layer linear array structure and is assembled set of cylindrical lenses and become.
The light that described semiconductor laser array sends forms the bar shaped pump light that width is less than or equal to lath gain media thickness after described shaping lens.
Described shaping lens is a cylindrical lens.
The light that semiconductor sends becomes strip light through after the shaping lens, and its width is slightly less than and equals crystal thickness.Corner reflector is close to the placement of crystal opposite side, and the light of transmission is reflected back in the crystal by corner reflector.Adopt two the big face conduction coolings of microchannel cooling to crystal.Because crystal is very thin, the beam quality on thickness direction can be near diffraction limit.The crystal width is bigger, is easy to generate the high-rder mode vibration, and we take variable reflectivity mirror to suppress the vibration of high-rder mode.Total resonant cavity chamber shape is a hybrid chamber, is average chamber on the thickness direction promptly, on the horizontal direction for just propping up unsteady cavity.
Advantage of the present invention:
1, among the present invention, it is more even to adopt corner reflector to distribute than the direct pump light that obtains at the opposite side plating reflectance coating of crystal, and pump light almost all is absorbed, and helps improving beam quality and overall efficiency.
2, among the present invention, adopt microchannel cooling that two big faces of lath are conducted cooling, the good heat dissipation effect and the conduction type of cooling make heat radiation more even like this, also help improving the beam quality of laser.
3, the mode that adopts hybrid resonant chamber and reflectivity-variable outgoing mirror to combine has improved the beam quality of laser greatly.Because lath is thinner, adopt average chamber can reach beam quality preferably on the thickness direction; We adopt and just to prop up unsteady cavity and the reflectivity-variable outgoing mirror suppresses the vibration of high-rder mode in the horizontal direction, thereby obtain the laser output of high light beam quality.
4, adopt pump direction, laser direction and the orthogonal mode of cooling direction three, like this pumping and cooling are reduced to minimum to the influence of output laser, also help improving beam quality.
5, this scheme can obtain high-power output by the quantity that increases crystal length and semiconductor array, and guarantees good beam quality and high efficiency simultaneously.
Description of drawings
Fig. 1 is the vertical view of laser structure of the present invention
Fig. 2 is the AA view of Fig. 1
Fig. 3 is the schematic perspective view of corner reflector among the present invention
Embodiment
The invention will be further described below in conjunction with embodiment and accompanying drawing, but should not limit protection scope of the present invention with this.
See also Fig. 1, Fig. 2 and Fig. 3 earlier, as seen from the figure, the solid batten laser of a kind of semiconductor single-side pumping of the present invention, comprise lath gain media 4, with described lath gain media 4 is the center, length direction at this lath gain media 4 is respectively Effect of Back-Cavity Mirror 6 and reflectivity-variable outgoing mirror 7, in 4 one sides of described lath gain media is semiconductor laser array 1 and shaping lens 2 thereof, the another side angle reflector 5 that is sticked is at described lath gain media two big faces microchannel cooling 3 that is sticked about in the of 4.
Described in the present embodiment lath gain media 4 be thickness less than 2mm, the flakiness ratio in cross section is greater than 2 laser crystal strip.
Described angle reflector 5 cross sections are isosceles triangle, and drift angle is an acute angle, the film that is all-trans of two big sides and two end face plating pumping laser wavelength.
The length direction of described lath gain media 4 is respectively that Effect of Back-Cavity Mirror 6 and reflectivity-variable outgoing mirror 7 constitute resonant cavity, and its thickness direction is average chamber, and horizontal direction is that reflectivity-variable is just propping up unsteady cavity.
The reflectivity of described reflectivity-variable outgoing mirror 7 is a constant on thickness direction, and the Width reflectivity is distributed as Gauss or this distribution of superelevation.Described semiconductor laser array 1 is the individual layer linear array structure.
The light that described semiconductor laser array 1 sends forms the bar shaped pump light that width is less than or equal to lath gain media 4 thickness after described shaping lens 2.Described shaping lens 2 is a cylindrical lens.
The pump light that linear array semiconductor laser 1 in one line sends is through microtrabeculae lens (2) shaping, the semiconductor laser of sandwich construction perhaps in one line, after each linear array difference shaping, by a big cylindrical mirror compression light beam width, be slightly less than or equal the thickness of gain media 4 at last through the width of light beam after the shaping.The wide majority that enters gain media 4 directly passes through gain media 4 without the last lower wall reflection of gain media 4, and small part light is by lower wall reflection on the gain media 4, and this part light all meets total reflection condition and can not lose.The pump light that is not absorbed fully incides on the corner reflector 5, two big sides of this corner reflector 5 and the reflectance coating of two end face plating pump light wavelength 808nm, the effect of this corner reflector 5 mainly contains 2: the one, this part light is reflected to increase pumping efficiency, the 2nd, this part light energy distribution is redistributed, distribute so that in gain media 4, obtain uniform pumping energy.Corner reflector 5 will be close to the side of gain media 4, and concrete modes of emplacement as shown in Figure 2.Pump light adopts two big faces of 3 pairs of gain medias 4 of microchannel cooling to conduct cooling, and good heat dissipation effect because conduction cooling raio convection current cooling is more even, can reduce the even influence to beam quality of inhomogeneous cooling greatly like this.Resonant cavity adopts the hybrid chamber that is made of Effect of Back-Cavity Mirror 6 and reflectivity-variable outgoing mirror 7, on lath gain media 4 thickness directions, be average chamber, adopt on lath gain media 4 horizontal directions and just propping up unsteady cavity, because gain media 4 laths are thinner, adopt average chamber just can obtain to export near the laser of diffraction limit, size is bigger on the Width, be easy to generate the high-rder mode vibration, adopt and just propping up the vibration that unsteady cavity can well be restrained high-rder mode, and chamber length can be very short, in addition, adopt reflectivity-variable outgoing mirror 7 can further improve the beam quality of output laser.Show that through on probation laser of the present invention can obtain the output of high light beam quality laser, can keep high efficiency again, can realize high power output; And has simple in structure, a compact advantage.
Claims (8)
1, a kind of solid batten laser of semiconductor single-side pumping, comprise lath gain media (4), be characterised in that it constitutes: with described lath gain media (4) is the center, length direction at this lath gain media (4) is respectively Effect of Back-Cavity Mirror (6) and reflectivity-variable outgoing mirror (7), in (4) sides of described lath gain media is semiconductor laser array (1) and shaping lens (2) thereof, the another side angle reflector (5) that is sticked is at described lath gain media (4) two big faces microchannel cooling (3) that is sticked up and down.
2, the solid batten laser of semiconductor single-side pumping according to claim 1, it is characterized in that described lath gain media (4) be thickness less than 2mm, the flakiness ratio in cross section is greater than 2 laser crystal or laser glass lath.
3, the solid batten laser of semiconductor single-side pumping according to claim 1 is characterized in that described angle reflector (5) cross section is an isosceles triangle, and drift angle is an acute angle, the film that is all-trans of two big sides and two end face plating pumping laser wavelength.
4, the solid batten laser of semiconductor single-side pumping according to claim 1, the length direction that it is characterized in that described lath gain media (4) is respectively that Effect of Back-Cavity Mirror (6) and reflectivity-variable outgoing mirror (7) constitute resonant cavity, its thickness direction is average chamber, and horizontal direction is that reflectivity-variable is just propping up unsteady cavity.
5, the solid batten laser of semiconductor single-side pumping according to claim 4, the reflectivity that it is characterized in that described reflectivity-variable outgoing mirror (7) is a constant on thickness direction, the Width reflectivity is distributed as Gauss or this distribution of superelevation.
6, the solid batten laser of semiconductor single-side pumping according to claim 1 is characterized in that described semiconductor laser array (1) is the individual layer linear array structure, or multi-layer linear array structure and is assembled set of cylindrical lenses and become.
7,, it is characterized in that the light that described semiconductor laser array (1) sends forms the bar shaped pump light that width is less than or equal to lath gain media (4) thickness after described shaping lens (2) according to the solid batten laser of claim 1 or 6 described semiconductor single-side pumpings.
8,, it is characterized in that described shaping lens (2) is a cylindrical lens according to the solid batten laser of each described semiconductor single-side pumping of claim 1 to 6.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100300054A CN100405675C (en) | 2006-08-11 | 2006-08-11 | Solid batten laser for semiconductor single-side pumping |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100300054A CN100405675C (en) | 2006-08-11 | 2006-08-11 | Solid batten laser for semiconductor single-side pumping |
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| Publication Number | Publication Date |
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| CN1909308A true CN1909308A (en) | 2007-02-07 |
| CN100405675C CN100405675C (en) | 2008-07-23 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB2006100300054A Expired - Fee Related CN100405675C (en) | 2006-08-11 | 2006-08-11 | Solid batten laser for semiconductor single-side pumping |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100527547C (en) * | 2008-04-02 | 2009-08-12 | 中国科学院上海光学精密机械研究所 | Tunable thulium-doped optical fiber laser |
| CN103210555A (en) * | 2010-08-10 | 2013-07-17 | 丹特雷有限公司 | Laser arrangement and system, and a medical laser treatment system thereof |
| CN113612103A (en) * | 2021-06-22 | 2021-11-05 | 中国工程物理研究院应用电子学研究所 | End-pumped liquid direct symmetric cooling plate strip gain module |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5867324A (en) * | 1997-01-28 | 1999-02-02 | Lightwave Electronics Corp. | Side-pumped laser with shaped laser beam |
| US6167069A (en) * | 1998-05-01 | 2000-12-26 | The Regents Of The University Of California | Thermal lens elimination by gradient-reduced zone coupling of optical beams |
| US6822994B2 (en) * | 2001-06-07 | 2004-11-23 | Northrop Grumman Corporation | Solid-state laser using ytterbium-YAG composite medium |
| CN2598214Y (en) * | 2003-01-16 | 2004-01-07 | 华南理工大学 | Solid strip laser of laser diode inclination pumping |
| CN1309125C (en) * | 2004-11-02 | 2007-04-04 | 中国科学院上海光学精密机械研究所 | Semiconductor laser side-face pumping solid strip laser |
| CN2938487Y (en) * | 2006-08-11 | 2007-08-22 | 中国科学院上海光学精密机械研究所 | Fixed plate laser of semiconductor single-side pump |
-
2006
- 2006-08-11 CN CNB2006100300054A patent/CN100405675C/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100527547C (en) * | 2008-04-02 | 2009-08-12 | 中国科学院上海光学精密机械研究所 | Tunable thulium-doped optical fiber laser |
| CN103210555A (en) * | 2010-08-10 | 2013-07-17 | 丹特雷有限公司 | Laser arrangement and system, and a medical laser treatment system thereof |
| CN113612103A (en) * | 2021-06-22 | 2021-11-05 | 中国工程物理研究院应用电子学研究所 | End-pumped liquid direct symmetric cooling plate strip gain module |
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| Publication number | Publication date |
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| CN100405675C (en) | 2008-07-23 |
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