CN1309125C - Semiconductor laser side-face pumping solid strip laser - Google Patents
Semiconductor laser side-face pumping solid strip laser Download PDFInfo
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- CN1309125C CN1309125C CNB2004100676966A CN200410067696A CN1309125C CN 1309125 C CN1309125 C CN 1309125C CN B2004100676966 A CNB2004100676966 A CN B2004100676966A CN 200410067696 A CN200410067696 A CN 200410067696A CN 1309125 C CN1309125 C CN 1309125C
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Abstract
The present invention relates to a solid strip laser of side pumping of a semi-conductor laser. The present invention is characterized in that the active medium of the laser is a laser solid strip which is a cuboid flake. The length-width ratio of the laser solid strip is larger than 3, and the width is larger than the thickness. The output pumping light of a pumping source of the semi-conductor laser is shaped into one-dimensional parallel light, the cross section of the one-dimensional parallel light is in a rectangle shape, and the beam diameter in the thickness direction of the pumping light is less than half of the thickness of the laser solid strip. The pumping light enters the laser solid strip from the side surface of the laser solid strip, and the laser solid strip carries out heat radiation by an upper and a lower large surfaces. A laser resonator is an unstable resonator in the width direction of the laser solid strip, and the thickness direction of the laser solid strip is a stable resonator. The present invention can realize laser output with large power and high beam quality of a solid laser and obtain high pumping efficiency simultaneously. The present invention has the advantages of large stable region of the laser resonator, compact structure and easy processing.
Description
Technical field
The present invention relates to a kind of solid batten laser of semiconductor laser pumping, particularly relate to the solid batten laser of a kind of high-power, high light beam quality, high efficiency semiconductor laser profile pump.
Background technology
Increase along with the power output of solid state laser, the heating of solid state laser itself can cause laser-activated medium---laser crystal, the distortion of laser glass etc., thereby cause exporting the decline of laser beam quality, how when improving laser output power, the output beam quality that keeps great-power solid laser effectively is that solid state laser manufactures and designs middle problem demanding prompt solution always.Also there is same problem for solid batten laser.For solving the problem of high power laser output beam quality, there are three kinds of main solid batten lasers now: first kind of solid batten laser for propagating in a zigzag, in this laser slab laser, because the temperature distortion on laser solid batten surface, when laser beam during by the surface reflection of laser solid batten, still can cause the decline of beam quality, and since laser beam in laser slab along propagating in a zigzag, the collimation difficulty of laser, complex structure; Second kind is the solid batten laser of sandwich construction, but the processing technology complexity of sandwich construction laser solid batten, when power output was higher, the sandwich construction of laser solid batten damaged easily simultaneously, made the solid batten laser of this kind sandwich construction can not guarantee powerful output; The third is the solid batten laser of end pumping, in this kind laser, pump light enters laser slab by the end face of laser solid batten, because the end face of lath is narrow and small, limited entering of large power pumping optical, thereby this kind laser can not be realized powerful laser output.In a word, existing several solid batten lasers can not satisfy when obtaining high-power output, obtain the requirement of high light beam quality, and all have complex manufacturing technology, the defective that processing cost is high.
Summary of the invention
The objective of the invention is to overcome above-mentioned the deficiencies in the prior art, a kind of solid batten laser of semiconductor laser profile pump is provided, it can be when obtaining high power laser output, has higher laser beam quality, and the present invention can realize the laser output of high-power, the high light beam quality of solid state laser, obtains high pumping efficient simultaneously; And have that the laser cavity stability region is big, compact conformation, the simple advantage of processing.
The technical scheme that the present invention solves the problems of the technologies described above is as follows:
A kind of solid batten laser of semiconductor laser profile pump, it is characterized in that: by the laser solid batten, the semiconductor laser pumping source, the optical shaping cylindrical microlenses, the Effect of Back-Cavity Mirror of laserresonator, the outgoing mirror of laserresonator and cooler are formed, the thin slice lath that described laser solid batten is a single structure, its both sides, be that Width is provided with the semiconductor laser pumping source, the optical shaping cylindrical microlenses is located between semiconductor laser pumping source and the laser solid batten, the pump light that send in the semiconductor laser pumping source forms the cross section behind the optical shaping cylindrical microlenses be rectangular one dimension directional light, enter from the centre position of described laser solid batten side, pump light is at the beam diameter of the thickness direction thickness less than laser solid batten two sides, laser beam is propagated at laser solid batten cathetus, do not contact with two surfaces up and down of this laser solid batten, described laser solid batten on two surfaces described cooler is set all up and down, in the both ends of the surface of laser solid batten, the laserresonator Effect of Back-Cavity Mirror is set respectively, the laserresonator outgoing mirror.
Described laser solid batten be length-width ratio greater than 3, width is greater than the thin slice solid batten of the laser-activated medium of thickness.
Two end faces of described laser solid batten and lateral vertical.Two end faces of described laser solid batten are vertical with upper and lower surface, or become Brewster angle.Two sides of described laser solid batten and its be two Surface Vertical up and down, or out of plumb.
The pump light of described semiconductor laser pumping source output, less than 1/2 of laser solid batten thickness, the size of pump light length direction is identical with the length of described laser solid batten at the beam diameter of thickness direction.
The laser solid batten is by two surface radiating, and the refrigeration modes of described cooler is liquid cooling or air cooling, conduction refrigeration.
Described semiconductor laser pumping source is a semiconductor laser array.
Described laserresonator is a unsteady cavity at the Width of laser solid batten, both can be positive-branch confocal unstable resonator, also can be negative branch confocal unstable resonator, is stable cavity at laser solid batten thickness direction.In laserresonator, can add other optical modulation device, realize the pulse output of laser.
Advantage of the present invention or technique effect are:
1, in the present invention, owing to utilize laser solid batten two big surface radiatings up and down, area of dissipation is bigger, good heat dissipation effect, the heat distortion of laser slab is less, simultaneously because laser beam has only utilized the mid portion of laser solid batten, and the mid portion thermal stress of laser slab is little, heat distortion further reduces, thus the present invention when the high-power output of laser, good beam quality.
2, in the present invention, because the pump light of semiconductor laser is entered by the side of laser slab, and that the laser solid batten among the present invention can be made is very long, thereby powerful pump light can be coupled in the laser slab effectively, thereby realizes the high-power output of laser.
3, in the present invention, because pump beam and laser beam all are limited in the narrow and small gain region of the pump light defined after the shaping, the degree of overlapping in the bore of laser beam and pumping zone is higher, thereby the light of laser-phototranstormation efficiency height.
4, in the present invention, because laser beam is limited in the narrow and small gain region of the pump light defined after the shaping, the bore of laser beam is subjected to the influence of thermal lensing effect little, thereby laser can be operated in bigger thermal lens excursion, so the stability range of laser works is big.
5, based on the reason same with advantage 4, in the present invention, the bore of the output beam of laser is subjected to the influence of thermal lensing effect also less, thereby the output beam radius stability height of laser.
6, in the present invention, owing to adopted the laser solid batten of single structure, and pump light and refrigeration carry out at the different directions of laser solid batten respectively, thereby whole laser is simple in structure, is convenient to make.
Description of drawings
Fig. 1 partly cuts open the structure vertical view for the solid batten laser preferred embodiment of semiconductor laser profile pump of the present invention.
Fig. 2 is the laser solid batten among the present invention and the schematic three dimensional views of the relative position of pump light in the laser solid batten.
Fig. 3 is the side sectional view of Fig. 1.
Embodiment
See also Fig. 1, Fig. 2 and shown in Figure 3, as seen from the figure, a kind of solid batten laser of semiconductor laser profile pump is by laser solid batten 1, semiconductor laser pumping source 2, optical shaping cylindrical microlenses 3, the Effect of Back-Cavity Mirror 4 of laserresonator, the outgoing mirror 5 of laserresonator and cooler 6 are formed, described laser solid batten 1 is the thin slice lath of single structure, its both sides, be that Width is provided with semiconductor laser pumping source 2, optical shaping cylindrical microlenses 3 is located between semiconductor laser pumping source 2 and the laser solid batten 1, the pump light that send in semiconductor laser pumping source 2 through optical shaping cylindrical microlenses 3 after to form the cross section be rectangular one dimension directional light, enter from the centre position of described laser solid batten 1 side, pump light is at the beam diameter of the thickness direction thickness less than laser solid batten 1 two sides, laser beam is propagated at laser solid batten 1 cathetus, not with up and down two the surface contact, two surfaces up and down of described laser solid batten 1 are provided with described cooler 6, in the both ends of the surface of laser solid batten 1, laserresonator Effect of Back-Cavity Mirror 4 is set respectively, laserresonator outgoing mirror 5.The Width of this laserresonator is a unsteady cavity, and thickness direction is a stable cavity.Described laser solid batten 1 by about, i.e. two surface radiatings of thickness direction, cooler 6 is close to this laser solid batten, and about in the of 1 two surfaces.The propagation trajectories 7 of pump light in laser solid batten 1 is positioned at the elongated bodies of the centre of laser solid batten 1, and pump light forms the gain waveguide district of prolate in laser solid batten 1.Semiconductor laser pumping source 2 is that semiconductor laser array is formed.This semiconductor laser array can be the array of vertically arranging, and also can be transverse row cloth array.
Be the concrete parameter of the specific embodiment of the invention below:
Laser solid batten 1 length is L=53mm, and wide is W=7.0mm, and thick is T=1mm, is processed by the 5.0% Yb:YAG crystal that mixes.Semiconductor laser pumping source 2 by 2 groups the semiconductor laser array of totally 30 power output 60W form.This semiconductor laser array can be the array of vertically arranging, and also can be transverse row cloth array.The gross output of pump light is 1800W.Semiconductor laser 2 symmetry arrangement are in the both sides of laser solid batten 1, beam sizes after 3 shapings of pump light process optical shaping cylindrical microlenses is long L=53mm, thickness P=0.4mm, pump light is entered by the both sides of laser solid batten 1, and the propagation trajectories 7 of pump light is positioned at the elongated bodies of the centre of laser solid batten 1.Laserresonator Effect of Back-Cavity Mirror 4 is a plano-concave cylinder completely reflecting mirror, laserresonator Effect of Back-Cavity Mirror 4 is 750mm in the radius of curvature of the Width of laser solid batten 1, thickness direction at laser solid batten 1 is the plane, and the rear end face of laserresonator Effect of Back-Cavity Mirror 4 central points and laser solid batten 1 is at a distance of 5mm.Laserresonator outgoing mirror 5 is a plano-convex cylinder hard-edge speculum, also can be the speculum of reflectivity-variable, the radius of curvature at the Width of laser solid batten 1 of laserresonator outgoing mirror 5 is 620mm, thickness direction at laser solid batten 1 is the plane, and the front end face of the central point of laserresonator outgoing mirror 5 and laser solid batten 1 is at a distance of 5mm.Laser solid batten 1 is placed on the centre of laserresonator Effect of Back-Cavity Mirror 4 and laserresonator outgoing mirror 5.Laserresonator Effect of Back-Cavity Mirror 4 and laserresonator outgoing mirror 5 are at a distance of 63mm, laserresonator Effect of Back-Cavity Mirror 4 and laserresonator outgoing mirror 5 constitute positive-branch confocal unstable resonator at the length direction of laser solid batten 1, the multiplication factor of laserresonator is 1.2, and the coupling output rating is 17%.At the thickness direction of laser solid batten 1 because the thermal lensing effect of laser solid batten 1 constitutes stable cavity.The thickness direction that the gain waveguide district 7 of thermal lens, Ping-Ping resonant cavity and prolate satisfies at laser solid batten 1 in the laser solid batten 1 has only the basic mode of resonant cavity to exist in laser, with the beam quality that obtains.Cooler 6 is a semiconductor microactuator passage cooling piece, and cooling piece is of a size of 53 * 7mm.Cooler 6 is close to this laser solid batten, and about in the of 1 two surfaces, to obtain better heat radiating effect.This laser running hours, the output average power is 1000W, beam quality factor is M2=1.2 * 1.1.
Claims (9)
1, a kind of solid batten laser of semiconductor laser profile pump, it is characterized in that: by laser solid batten (1), semiconductor laser pumping source (2), optical shaping cylindrical microlenses (3), laserresonator Effect of Back-Cavity Mirror (4), laserresonator outgoing mirror (5) and cooler (6) are formed, described laser solid batten (1) is the thin slice lath of single structure, its both sides, be that Width is provided with semiconductor laser pumping source (2), optical shaping cylindrical microlenses (3) is located between semiconductor laser pumping source (2) and the laser solid batten (1), the pump light that send in semiconductor laser pumping source (2) forms the cross section behind optical shaping cylindrical microlenses (3) be rectangular one dimension directional light, enter from the centre position of described laser solid batten (1) side, pump light is at the beam diameter of the thickness direction thickness less than laser solid batten (1) two sides, laser beam is propagated at laser solid batten (1) cathetus, do not contact with two surfaces up and down of laser solid batten (1), described laser solid batten (1) on two surfaces described cooler (6) is set all up and down, both ends of the surface in laser solid batten (1) are provided with laserresonator Effect of Back-Cavity Mirror (4) respectively, laserresonator outgoing mirror (5).
2, the solid batten laser of semiconductor laser profile pump according to claim 1, it is characterized in that described laser solid batten (1) be length-width ratio greater than 3, width is greater than the thin slice solid batten of the laser-activated medium of thickness.
3, the solid batten laser of semiconductor laser profile pump according to claim 1 is characterized in that two end faces and the lateral vertical of described laser solid batten (1).
4, the solid batten laser of semiconductor laser profile pump according to claim 3 is characterized in that two end faces of described laser solid batten (1) are vertical with upper and lower surface, or becomes Brewster angle.
5, the solid batten laser of semiconductor laser profile pump according to claim 3 is characterized in that two sides of described laser solid batten (1) and its two Surface Vertical up and down, or out of plumb.
6, the solid batten laser of semiconductor laser profile pump according to claim 1, the pump light that it is characterized in that described semiconductor laser pumping source (2) output, less than 1/2 of laser solid batten thickness, the size of pump light length direction is identical with the length of described laser solid batten (1) at the beam diameter of thickness direction.
7, the solid batten laser of semiconductor laser profile pump according to claim 1, the refrigeration modes that it is characterized in that described cooler (6) are liquid cooling or air cooling, conduction refrigeration.
8, the solid batten laser of semiconductor laser profile pump according to claim 1 is characterized in that described semiconductor laser pumping source (2) is semiconductor laser array.
9, the solid batten laser of semiconductor laser profile pump according to claim 1 is characterized in that adding other optical modulation device in laserresonator, realizes the pulse output of laser.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100676966A CN1309125C (en) | 2004-11-02 | 2004-11-02 | Semiconductor laser side-face pumping solid strip laser |
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| CNB2004100676966A CN1309125C (en) | 2004-11-02 | 2004-11-02 | Semiconductor laser side-face pumping solid strip laser |
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| CN1309125C true CN1309125C (en) | 2007-04-04 |
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Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100379100C (en) * | 2005-12-27 | 2008-04-02 | 中国科学院上海光学精密机械研究所 | Laser medium cooling device of thin laser |
| CN100405675C (en) * | 2006-08-11 | 2008-07-23 | 中国科学院上海光学精密机械研究所 | Solid batten laser for semiconductor single-side pumping |
| CN102074888B (en) * | 2010-04-23 | 2012-03-07 | 中国科学院理化技术研究所 | Self-frequency doubling laser with function of single beam laser output or linear laser output |
| CN102088159A (en) * | 2010-12-24 | 2011-06-08 | 深圳市大族激光科技股有限公司 | End-pumped laser |
| CN107946891B (en) * | 2017-12-14 | 2019-09-17 | 湖北工业大学 | A kind of high-power ultraviolet solid-state laser |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4713822A (en) * | 1985-05-24 | 1987-12-15 | Amada Engineering & Service Co., Inc. | Laser device |
| US20020181534A1 (en) * | 2000-10-25 | 2002-12-05 | Spectra-Physics Lasers, Inc. | Diode-pumped slab solid-state laser |
| JP2002357418A (en) * | 2001-05-31 | 2002-12-13 | Murata Seisakusho:Kk | Three-dimensional position measuring device for hole |
| WO2003043144A2 (en) * | 2001-11-13 | 2003-05-22 | Spectra Physics, Inc. | Diode-pumped solid-state thin slab laser |
| CN2598214Y (en) * | 2003-01-16 | 2004-01-07 | 华南理工大学 | Solid strip laser of laser diode inclination pumping |
-
2004
- 2004-11-02 CN CNB2004100676966A patent/CN1309125C/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4713822A (en) * | 1985-05-24 | 1987-12-15 | Amada Engineering & Service Co., Inc. | Laser device |
| US20020181534A1 (en) * | 2000-10-25 | 2002-12-05 | Spectra-Physics Lasers, Inc. | Diode-pumped slab solid-state laser |
| JP2002357418A (en) * | 2001-05-31 | 2002-12-13 | Murata Seisakusho:Kk | Three-dimensional position measuring device for hole |
| WO2003043144A2 (en) * | 2001-11-13 | 2003-05-22 | Spectra Physics, Inc. | Diode-pumped solid-state thin slab laser |
| CN2598214Y (en) * | 2003-01-16 | 2004-01-07 | 华南理工大学 | Solid strip laser of laser diode inclination pumping |
Non-Patent Citations (3)
| Title |
|---|
| 文章第2 4页，图B，图4B 二极管侧泵板条固体激光器的热效应研究，强激光与粒子束，第9卷第4期 1997 * |
| 文章第2 4页，图B，图4B 二极管侧泵板条固体激光器的热效应研究，强激光与粒子束，第9卷第4期 1997;文章第2-3页，图1 大功率半导体激光侧面泵浦ND:YAG板条激光器，中国激光，第21卷第11期 1994 * |
| 文章第2-3页，图1 大功率半导体激光侧面泵浦ND:YAG板条激光器，中国激光，第21卷第11期 1994 * |
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