CN1893039A - 用于半导体器件的抗翘曲散热器 - Google Patents
用于半导体器件的抗翘曲散热器 Download PDFInfo
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Abstract
本发明公开一种用于半导体器件的抗翘曲散热器,其中散热器由基本上恒定厚度的金属片制成,金属片由至少一个开孔贯穿,以便允许粘接剂或树脂通过。散热器被设计成通过在它的部件,即电路板、管芯、散热器和增强框架之间提供强的接合而加强封装。同时,由管芯在工作期间生成的热被有效地耗散。散热器可以通过把它放置在模具中被容易地附着到管芯,模具被用来产生增强的框架和然后被填充以模制料。模制料容易流过开孔,由此填充在散热器与管芯之间的缝隙。模制料代替空气,空气从散热器与管芯之间的缝隙中逸出。因此,构成在管芯与散热器之间的强的和坚固的连接。在散热器底下的接合层与在散热器上面的增强框架通过开孔被坚固地互联。
Description
本专利申请要求2005年6月30日提交的、题目为“Anti-Warp HeatSpreader for Semiconductor Devices”的美国临时专利申请No.60/695,640的权益,该专利申请在此引用以供参考。
技术领域
本发明涉及用于诸如集成电路(“IC”)半导体芯片等等的半导体器件的抗翘曲散热器,以及包含这样的散热器的半导体器件。
背景技术
抗翘曲散热器已在现有技术的专利中描述。例如,美国专利No.6,848,172B2(Fitzgerald等),美国专利No.5,998,241(Niwa),日本专利No.073028666A(Okikawa等),日本专利No.10056110A(Muramatsu等),和日本专利No.09008186A(Imura等)都描述相关的器件。所有的这些现有技术参考文献在此引用以供参考。
半导体器件通常包含半导体芯片(所谓的管芯)和电路板。管芯藉助于合成树脂被安装在电路板的顶面,以及藉助于接合线被电连接到电路板的底面,该接合线从管芯的底侧穿过电路板的开孔延伸到电路板的底面,其中接合线被连接到位于该底面的导体迹线。
包括管芯的、至少电路板的顶面(所谓的封装)通常被合成树脂覆盖,以形成封装顶上的增强框架,以保护管芯不受到潜在的损坏影响。特别是对于高性能半导体芯片,常常把散热器加到封装上(有时与散热片相组合),以便发散由管芯在运行时生成的热量,因此改进它的耗散。通常,散热器藉助于合成树脂被粘接到管芯的顶面。在要使用散热片的大多数情形下,散热器保持为暴露的,即它不被增强框架覆盖。
曾经作出努力来利用这样的散热器作为增强部件,以便加强封装和防止热引起的翘曲,这种翘曲会导致封装故障。然而,经验表明,至今提出的解决方案不是非常有效的,所以需要一种改进半导体器件的机械强度,以使得由热引起的器件的翘曲最小化的散热器。
发明内容
一方面,本发明提供用于半导体器件的散热器,它有效地散热和有助于热耗散,同时增强器件以使得热引起的翘曲最小化。另一方面,本发明提供具有这样的散热器的半导体器件,它可以很好地抵抗由于过热造成的热故障以及同时抵抗因为热变形造成的机械故障。
例如,可以对于半导体器件提供抗翘曲散热器,其中散热器由基本上恒定的厚度的金属片组成。金属片被至少一个开孔贯穿,以便允许模制料通过。
散热器被设计成通过在它的部件,即电路板、管芯、散热器和增强框架之间提供强的接合而加强封装。同时,由管芯在工作期间生成的热被有效地耗散。散热器可以通过把它放置在模具中而附着到管芯,模具被使用来产生增强的框架和然后被填充以模制料。模制料容易流过开孔,由此填充在散热器与管芯之间的缝隙。模制料代替空气,空气从在散热器与管芯之间的缝隙中逸出。因此,构成管芯与散热器之间的强的和坚固的连接。在散热器底下的接合层与在散热器上面的增强框架通过开孔被坚固地互联。
按照本发明的另一方面,金属片基本上的平的,以及具有至少一个沟槽,沟槽中布置至少一个开孔。沟槽被做成局部减小金属片的厚度。它例如可以通过蚀刻金属片的顶面而被制成。模制料在模制期间填充沟槽,以及在固化后建立增强框架。特别有利的是,在每个沟槽的旁边提供一些沟,以便收集过量的模制料,它在模压期间在填充沟槽后流出。这样,散热器的顶面保持没有模制料。
按照本发明的另一方面,金属片具有互相平行的沟槽的主沟槽组,和互相平行并与主沟槽组交叉的副沟槽组。因此,可以形成围绕管芯的沟槽的网格。这使得容易通过简单切割或锯开它们把一个封装与同时被模制的封装组分离开。有利的是,沿沟槽以列和行安排多个开孔。因此,增强框架沿每个封装的边缘被连接到电路板。
在本发明的另一个实施例中,散热器还具有加固的皱褶。众所周知,皱褶板比起同样厚度的平板是更坚固的。所以,皱褶的金属片在被用作为散热器时给予封装更大的强度。加固皱褶例如具有一个或多个起伏或凹形的形状。在金属板上形成的起伏和凹形的任何组合属于本发明的范围。不管对于皱褶所使用的实际的形状,有利的是分别在由起伏形成的沟槽或在凹形的底部安排开孔。
与在上述的实施例中使用的平金属片一样,加固的皱褶可以有利地包括互相平行的起伏的主起伏组。这个主起伏组可以与互相平行并与主起伏组交叉的副起伏组互补,由此在交叉点处是中断的。两组在两个不同的方向互相平行的起伏的安排给予封装额外的坚固度,而不管外部冲击的实际的方向以及用于每种热负荷情形。
为了甚至更高的坚固度,使得主起伏组伸到金属片的一边和副起伏组伸到金属片的另一边可能是有用的。
附图说明
为了更全面地理解本发明及其优点,现在参考结合附图作出的以下的说明,其中:
图1A是其中使用具有沟槽的散热器的第一实施例的、在通用电路板上包括几个管芯的部件组件的截面图;
图1B是具有沟槽的散热器的顶视图;
图1C是具有沟槽的散热器的局部截面图;
图2A是其中使用具有起伏的散热器的第二实施例的第一模型的、在通用电路板上包括几个管芯的部件组件的截面图;
图2B是其中使用具有起伏的散热器的第二实施例的第二模型的、在通用电路板上包括几个管芯的部件组件的截面图;
图2C是其中使用具有起伏的散热器的第二实施例的第三模型的、在通用电路板上包括几个管芯的部件组件的截面图;
图3A是具有起伏的散热器的第一和第三模型的顶视图;
图3B是具有起伏的散热器的第二模型的顶视图;
图4A是被附着到具有大的或小的管芯的基片的、具有起伏的散热器的第一和第三模型的顶视图;
图4B是被附着到具有大的或小的管芯的基片的、具有起伏的散热器的第二模型的顶视图;
由图5a-5d组成的图5,显示对于使用散热器的第二实施例的第一模型的封装的制造过程;
由图6a-6d组成的图6,显示对于使用散热器的第二实施例的第二模型的封装的制造过程;
由图7a-7d组成的图7,显示对于使用散热器的第二实施例的第三模型的封装的制造过程;
图8A是其中使用具有凹形的散热器的第三实施例的、在通用电路板上包括几个管芯的部件组件的第一模型的截面图;
图8B是其中使用具有凹形的散热器的第三实施例的、在通用电路板上包括几个管芯的部件组件的第二模型的截面图;
图9是具有凹形的散热器的顶视图;
图10是被附着到具有管芯的基片的具有凹形的散热器的顶视图;
由图11a-11d组成的图11,显示对于使用散热器的第三实施例的第一模型封装的制造过程;以及
由图12a-12d组成的图12,显示对于使用散热器的第三实施例的第二模型封装的制造过程。
具体实施方式
下面详细讨论本优选实施例的制作和使用。然而,应当指出,本发明提供许多可应用的发明性概念,它们可以以各种各样的具体的方面被实施,所讨论的具体的实施例仅仅说明制作和使用本发明的具体的方式,而不是限制本发明的范围。
图1A,1B,和1C是其中散热器4由基本上平的金属片制成的、本发明的第一实施例的示意图。在电路板1的顶面上,许多管芯2并排地排列,以及通过粘性环氧树脂3被附着到电路板1。在管芯2的顶部放置散热器4。散热器4具有被安排成网格状的多个沟槽5。沟槽5被布置在间隙6的上方,管芯2通过该间隙互相间隔开。散热器4通过粘性环氧树脂7被粘接到管芯2。
在沟槽5的地面上,安排多个开孔8,它们允许模制料9从散热器4的顶面自由地流到在管芯2之间的间隙6,以及填充到沟槽5,因此形成增强框架。在沟槽5旁边提供许多沟10,以便收集过量的模制料9,这样,散热器4的顶面保持没有模制料9,以便实现更好的热耗散。
在模制料固化后附着以焊料球,以便得到芯片与电路板之间的电连接,然后通过切割或锯开的处理过程可以把封装分开,其中组件沿沟槽5的中部被切割或锯开,以便得到具有增强框架的半导体器件。
图2A,2B,和2C是其中散热器4由皱褶的金属片制成的、本发明的第二实施例的示意图,加固皱褶具有起伏的形状。在电路板1的顶面上,许多管芯2并排地排列,以及通过粘性环氧树脂3被附着到电路板1。在管芯2的顶部放置散热器4。散热器4具有加固的皱褶。加固皱褶由互相平行的和属于主起伏组的多个起伏11构成。
图2A和图2B上的散热器4被附着到管芯2,以使得主起伏组的起伏11的峰脊通过粘性环氧树脂7被粘接到管芯2的顶面。图2C中的散热器4被附着到管芯2上,使得散热器4的皱褶区通过粘性环氧树脂7接合到管芯2的顶面。图2B上的散热器4还具有与主起伏组的起伏11交叉的起伏构成的副起伏组。
主起伏组的起伏11伸到金属片的一边,即底边(朝向管芯2),以及副起伏组的起伏12伸到金属片的另一边,即顶边(远离管芯2)。
在起伏11的地面和散热器4的无皱褶的区域上,安排多个开孔8,它们允许模制料9从散热器4的顶面自由地流到在管芯2之间和在散热器4与管芯2之间的间隙6,以及填充起伏11和12,并覆盖散热器4的表面,因此形成增强框架。
在模制料固化后附着以焊料球,以便得到芯片与电路板之间的电连接。然后通过切割或锯开的处理过程可以把封装分开,其中组件沿沟槽5的中部被切割或锯开,以便得到具有增强框架的半导体器件。
图3A和3B上再次显示第二实施例的散热器4。表面被部分地放大,以便说明散热器4的结构。散热器4具有起伏11的主起伏组。在由起伏11形成的沟槽的地面以及在起伏11之间的区域上,安排开孔8。在图3B上,散热器4还具有在与第一起伏组11的方向相反的方向上伸出的起伏12的副起伏组。
在图4A和4B上分别显示对于相对较大的管芯2或相对较小的管芯2的组件的可能的结构。主起伏组的起伏11被安排成放置在管芯2的上方,以便提供正确的和强的接合。如图4B所示,起伏12的副起伏组相对于管芯2的位置对于散热器4的效率重要性很小。
在图5,6,7上,显示对于第二实施例的三个变例的半导体器件的制造过程。首先,粘性环氧树脂层7被加到管芯2的顶面。然后,散热器4被粘接到管芯2的顶面。最后,间隙6被填充以模制料9,以使得空气从这些间隙6中排出。在模制料9固化后附着以焊料球,以便得到芯片与电路板之间的电连接,然后通过锯开的处理过程把封装分开。
图8A和8B是其中散热器4由皱褶金属片制成的、本发明的第三实施例的两个变例的示意图,加固皱褶具有凹形13的形状。在电路板1的顶面上,多个管芯2并排地排列,以及通过粘性环氧树脂3被附着到电路板1。在管芯2的顶部放置散热器4。散热器4具有加固皱褶。加固皱褶由多个凹形13构成。
图8A上的散热器4被这样地附着到管芯2,使得凹形13的底部通过粘性环氧树脂7被粘接到管芯2的顶面。图8B上的散热器4被这样地附着到管芯2,使得散热器4的无皱褶区域通过粘性环氧树脂7被粘接到管芯2的顶面,以及凹形13向上伸。
在凹形13的底部和在散热器4的无皱褶区域上,安排多个开孔8,它们允许模制料9从散热器4的顶面自由地流到在管芯2之间和散热器4与管芯2之间的间隙6,以及填充到凹形13和覆盖散热器4的顶面,因此形成增强框架。
在模制料固化后附着以焊料球,以便得到芯片与电路板之间的电连接,然后通过切割或锯开的处理过程把封装分开,其中组件沿在管芯2之间的间隙6被切割或锯开,以便得到具有增强框架的半导体器件。
第三实施例的散热器4再次显示于图9。表面被局部放大,以便说明散热器4的结构。散热器4具有由凹形13形成的加固皱褶。在凹形13的底部以及在凹形13之间的区域,安排有开孔8。
相对于管芯2的组件的可能的结构被显示于图10。凹形13被安排在管芯2的上方,以便提供正确的和强的接合。
在图11和12上,显示对于第三实施例的两个变例的半导体器件的制造过程。首先,粘性环氧树脂层7被加到管芯2的顶面。然后,散热器4被粘接到管芯2的顶面。最后,间隙6被填充以模制料9,以使得空气从这些间隙6中排出。在模制料9固化后,通过锯开处理过程把封装分开。
Claims (20)
1.一种半导体器件,包括:
半导体管芯;以及
由基本上恒定的厚度的金属片制成的散热器,金属片被至少一个开孔贯穿,以允许模制料通过。
2.按照权利要求1的半导体器件,其中所述金属片是基本上平的,以及其中至少一个开孔设在沟槽内,该沟槽局部减小金属片的厚度。
3.按照权利要求2的半导体器件,其中在沟槽的旁边提供至少一个沟,以便收集收集过量的模制料。
4.按照权利要求2的半导体器件,其中所述金属片具有互相平行的沟槽的主沟槽组,和互相平行并与主沟槽组交叉的副沟槽组。
5.按照权利要求4的半导体器件,其中沿沟槽以列和行安排多个开孔。
6.按照权利要求1的半导体器件,其中散热器还具有加固皱褶。
7.按照权利要求6的半导体器件,其中加固皱褶具有至少一个起伏的形状。
8.按照权利要求7的半导体器件,其中至少一个开孔被设置在由起伏形成的沟槽内。
9.按照权利要求6的半导体器件,其中加固的皱褶具有至少一个凹形的形状。
10.按照权利要求9的半导体器件,其中至少一个开孔被设置在凹形的底部。
11.按照权利要求6的半导体器件,其中加固皱褶是至少一个起伏和至少一个凹形组合。
12.按照权利要求11的半导体器件,其中至少一个开孔被放置在凹形的底部。
13.按照权利要求6的半导体器件,其中加固皱褶包括互相平行的起伏的主起伏组。
14.按照权利要求13的半导体器件,其中加固皱褶还包括互相平行并与主起伏组交叉的起伏构成的副起伏组,从而在交叉点处是中断的。
15.按照权利要求14的半导体器件,其中主起伏组伸到金属片的一边和副起伏组伸到金属片的另一边。
16.按照权利要求1的半导体器件,还包括:
电路板,半导体管芯被粘接到该电路板和电耦合到该电路板;以及
包围半导体管芯的上表面和散热器的模制料。
17.用于半导体器件的抗翘曲散热器,其中散热器由基本上恒定厚度的金属片制成,所述金属片被至少一个开孔贯穿,以允许模制料通过。
18.一种组装半导体器件的方法,该方法包括:
提供半导体管芯;
把散热器粘接到半导体管芯的上表面,散热器由基本上恒定厚度的金属片制成,所述金属片被至少一个开孔贯穿;以及
把模制料施加到半导体管芯的上表面,模制料穿过金属片的至少一个开孔。
19.按照权利要求18的方法,还包括在施加模制料之前把半导体管芯的下表面粘接到电路板。
20.按照权利要求19的方法,还包括将半导体管芯的接触区引线接合到电路板的接触区,使得半导体管芯的部件电耦合到电路板的焊料球。
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CN104411100A (zh) * | 2014-12-16 | 2015-03-11 | 南通富士通微电子股份有限公司 | 带支架的基板的制造方法 |
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KR101163259B1 (ko) | 2005-10-26 | 2012-07-05 | 엘지전자 주식회사 | Jtag용 msm |
GB2522642B (en) * | 2014-01-30 | 2018-08-15 | Xyratex Tech Limited | A solid state memory unit cooling apparatus and solid state storage device |
KR102050130B1 (ko) * | 2016-11-30 | 2019-11-29 | 매그나칩 반도체 유한회사 | 반도체 패키지 및 그 제조 방법 |
KR102340866B1 (ko) * | 2019-11-21 | 2021-12-20 | 매그나칩 반도체 유한회사 | 반도체 패키지 및 그 제조 방법 |
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JPS61143697A (ja) * | 1984-12-14 | 1986-07-01 | Mitsubishi Electric Corp | 熱交換装置 |
US5877552A (en) * | 1997-06-23 | 1999-03-02 | Industrial Technology Research Institute | Semiconductor package for improving the capability of spreading heat and electrical function |
JP3087709B2 (ja) * | 1997-12-08 | 2000-09-11 | 日本電気株式会社 | 半導体装置およびその製造方法 |
KR200239827Y1 (ko) * | 1998-03-06 | 2001-09-25 | 구자홍 | 티브이용방열판 |
TW400631B (en) * | 1999-01-06 | 2000-08-01 | Walsin Advanced Electronics | Chip package structure |
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JP3269815B2 (ja) * | 1999-12-13 | 2002-04-02 | 富士通株式会社 | 半導体装置及びその製造方法 |
US6541310B1 (en) * | 2000-07-24 | 2003-04-01 | Siliconware Precision Industries Co., Ltd. | Method of fabricating a thin and fine ball-grid array package with embedded heat spreader |
TW490830B (en) * | 2001-03-12 | 2002-06-11 | Siliconware Precision Industries Co Ltd | Heat sink with a shrinking mechanism and semiconductor device having the heat sink |
US6848172B2 (en) * | 2001-12-21 | 2005-02-01 | Intel Corporation | Device and method for package warp compensation in an integrated heat spreader |
US7196415B2 (en) * | 2002-03-22 | 2007-03-27 | Broadcom Corporation | Low voltage drop and high thermal performance ball grid array package |
US6979594B1 (en) * | 2002-07-19 | 2005-12-27 | Asat Ltd. | Process for manufacturing ball grid array package |
TW563232B (en) * | 2002-08-23 | 2003-11-21 | Via Tech Inc | Chip scale package and method of fabricating the same |
US20040080025A1 (en) * | 2002-09-17 | 2004-04-29 | Shinko Electric Industries Co., Ltd. | Lead frame, method of manufacturing the same, and semiconductor device manufactured with the same |
US6888238B1 (en) * | 2003-07-09 | 2005-05-03 | Altera Corporation | Low warpage flip chip package solution-channel heat spreader |
US7575956B2 (en) * | 2003-11-24 | 2009-08-18 | St Assembly Test Services Ltd. | Fabrication method for semiconductor package heat spreaders |
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