CN1883042A - 具有硅化源/漏的半导体器件 - Google Patents

具有硅化源/漏的半导体器件 Download PDF

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Publication number
CN1883042A
CN1883042A CNA2004800339621A CN200480033962A CN1883042A CN 1883042 A CN1883042 A CN 1883042A CN A2004800339621 A CNA2004800339621 A CN A2004800339621A CN 200480033962 A CN200480033962 A CN 200480033962A CN 1883042 A CN1883042 A CN 1883042A
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CN
China
Prior art keywords
source
drain
atoms
implanting
region
Prior art date
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Pending
Application number
CNA2004800339621A
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English (en)
Chinese (zh)
Inventor
德哈尔迈什·佳瓦拉尼
尼格尔·G·卡维
米歇尔·瑞登
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
Freescale Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freescale Semiconductor Inc filed Critical Freescale Semiconductor Inc
Publication of CN1883042A publication Critical patent/CN1883042A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2658—Bombardment with radiation with high-energy radiation producing ion implantation of a molecular ion, e.g. decaborane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0212—Manufacture or treatment of FETs having insulated gates [IGFET] using self-aligned silicidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/021—Manufacture or treatment using multiple gate spacer layers, e.g. bilayered sidewall spacers

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
CNA2004800339621A 2003-11-21 2004-10-26 具有硅化源/漏的半导体器件 Pending CN1883042A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/718,892 US7262105B2 (en) 2003-11-21 2003-11-21 Semiconductor device with silicided source/drains
US10/718,892 2003-11-21

Publications (1)

Publication Number Publication Date
CN1883042A true CN1883042A (zh) 2006-12-20

Family

ID=34591179

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2004800339621A Pending CN1883042A (zh) 2003-11-21 2004-10-26 具有硅化源/漏的半导体器件

Country Status (5)

Country Link
US (1) US7262105B2 (enExample)
JP (1) JP2007512704A (enExample)
KR (1) KR20060126972A (enExample)
CN (1) CN1883042A (enExample)
WO (1) WO2005052992A2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100413041C (zh) * 2004-06-02 2008-08-20 台湾积体电路制造股份有限公司 半导体元件的制造方法
CN102867748A (zh) * 2011-07-06 2013-01-09 中国科学院微电子研究所 一种晶体管及其制作方法和包括该晶体管的半导体芯片

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005294360A (ja) * 2004-03-31 2005-10-20 Nec Electronics Corp 半導体装置の製造方法
US20090162966A1 (en) * 2007-12-21 2009-06-25 The Woodside Group Pte Ltd Structure and method of formation of a solar cell
US20090159111A1 (en) * 2007-12-21 2009-06-25 The Woodside Group Pte. Ltd Photovoltaic device having a textured metal silicide layer
JP2009182089A (ja) * 2008-01-30 2009-08-13 Panasonic Corp 半導体装置の製造方法
US8178430B2 (en) 2009-04-08 2012-05-15 International Business Machines Corporation N-type carrier enhancement in semiconductors
US8648412B1 (en) 2012-06-04 2014-02-11 Semiconductor Components Industries, Llc Trench power field effect transistor device and method
CN117712162A (zh) * 2022-09-08 2024-03-15 联华电子股份有限公司 N型金属氧化物半导体晶体管及其制作方法

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Publication number Priority date Publication date Assignee Title
US4243433A (en) * 1978-01-18 1981-01-06 Gibbons James F Forming controlled inset regions by ion implantation and laser bombardment
JP2947654B2 (ja) * 1990-10-31 1999-09-13 キヤノン株式会社 Ｍｉｓ型トランジスタ
US5296387A (en) * 1991-03-06 1994-03-22 National Semiconductor Corporation Method of providing lower contact resistance in MOS transistor structures
JP3156436B2 (ja) * 1993-04-05 2001-04-16 日本電気株式会社 ヘテロ接合バイポーラトランジスタ
JP3219996B2 (ja) * 1995-03-27 2001-10-15 株式会社東芝 半導体装置及びその製造方法
US6399452B1 (en) * 2000-07-08 2002-06-04 Advanced Micro Devices, Inc. Method of fabricating transistors with low thermal budget
US6486062B1 (en) * 2000-08-10 2002-11-26 Advanced Micro Devices, Inc. Selective deposition of amorphous silicon for formation of nickel silicide with smooth interface on N-doped substrate
US6445016B1 (en) * 2001-02-28 2002-09-03 Advanced Micro Devices, Inc. Silicon-on-insulator (SOI) transistor having partial hetero source/drain junctions fabricated with high energy germanium implantation
US20020187614A1 (en) * 2001-04-16 2002-12-12 Downey Daniel F. Methods for forming ultrashallow junctions with low sheet resistance
US6998353B2 (en) * 2001-11-05 2006-02-14 Ibis Technology Corporation Active wafer cooling during damage engineering implant to enhance buried oxide formation in SIMOX wafers
US6638802B1 (en) * 2002-06-20 2003-10-28 Intel Corporation Forming strained source drain junction field effect transistors
US6797593B2 (en) * 2002-09-13 2004-09-28 Texas Instruments Incorporated Methods and apparatus for improved mosfet drain extension activation
US20050054164A1 (en) * 2003-09-09 2005-03-10 Advanced Micro Devices, Inc. Strained silicon MOSFETs having reduced diffusion of n-type dopants

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100413041C (zh) * 2004-06-02 2008-08-20 台湾积体电路制造股份有限公司 半导体元件的制造方法
CN101140886B (zh) * 2004-06-02 2010-06-02 台湾积体电路制造股份有限公司 半导体元件的制造方法
CN102867748A (zh) * 2011-07-06 2013-01-09 中国科学院微电子研究所 一种晶体管及其制作方法和包括该晶体管的半导体芯片
WO2013003986A1 (zh) * 2011-07-06 2013-01-10 中国科学院微电子研究所 一种晶体管及其制作方法和包括该晶体管的半导体芯片
US8835316B2 (en) 2011-07-06 2014-09-16 Institute of Microelectronics, Chinese Academy of Sciences Transistor with primary and semiconductor spacer, method for manufacturing transistor, and semiconductor chip comprising the transistor
CN102867748B (zh) * 2011-07-06 2015-09-23 中国科学院微电子研究所 一种晶体管及其制作方法和包括该晶体管的半导体芯片

Also Published As

Publication number Publication date
KR20060126972A (ko) 2006-12-11
US20050112829A1 (en) 2005-05-26
WO2005052992A3 (en) 2005-10-20
US7262105B2 (en) 2007-08-28
WO2005052992A2 (en) 2005-06-09
JP2007512704A (ja) 2007-05-17

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