CN1873942A - Substrate processing system - Google Patents
Substrate processing system Download PDFInfo
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- CN1873942A CN1873942A CN 200610087898 CN200610087898A CN1873942A CN 1873942 A CN1873942 A CN 1873942A CN 200610087898 CN200610087898 CN 200610087898 CN 200610087898 A CN200610087898 A CN 200610087898A CN 1873942 A CN1873942 A CN 1873942A
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Abstract
In the present invention, a plurality of first units capable of accommodating the substrate and a second unit are provided, in which a substrate is carried between the first unit and the second unit. The first units and the second unit are arranged side by side in a plan view, and at least one of the plurality of the first units is a processing unit for performing processing for the substrate. The plurality of first units are arranged in a line in the horizontal direction, and at least two first units adjacent to each other in the horizontal direction of the plurality of first units are movable in the horizontal direction to be able to transfer the substrate to/from the second unit. According to the present invention, the substrate processing system including a plurality of units flexibly deals with various substrate processing recipes and reduces the processing time difference among substrates and the carriage waiting time of the substrate.
Description
Technical field
The present invention relates to base plate processing system that substrate is handled.
Background technology
In the prior art, for example to the processing of substrates such as semiconductor wafer, will pass through multiple working procedure mostly, this processing uses a plurality of processing units to carry out continuously.Thereby the processing of substrate is normally carried out in concentrating the base plate processing system that has carried a plurality of processing units.
For example, the base plate processing system that carries out photo-mask process comprises: carry out the load/unload portion of input and output of substrate and the treating stations that carries out the processing of substrate.Central portion at treating stations is provided with central conveying device, disposes a plurality of processing unit groups (No. 2919925 communique of Japan Patent) around central conveying device circle-shapedly.The processing unit group constitutes by the processing unit of multilayer stacked variety classes in ground or identical type.To be transported to the predetermined process unit of a plurality of processing unit groups from a plurality of substrates that load/unload portion imports successively successively by central conveying device, stride the processing substrate of multiple working procedure continuously.Substrate after multiple working procedure disposes turns back to load/unload portion.According to this base plate processing system, can pass through to change kind and order, and tackle multiple substrate processing method using same flexibly by the processing unit of central conveying device conveying substrate.
Yet,,, the situation that can not carry out the conveying of other substrates is arranged during carrying a substrate owing to be to carry out the conveying of a plurality of substrates with a central conveying device according to the aforesaid substrate treatment system.For this reason, be difficult to export substrate on desirable opportunity from processing unit all the time, the time that a part of substrate is detained in processing unit is elongated, has the situation that produces processing time difference at substrate each other.For example the heat treatment time difference has very big influence to the result of substrate, might cause the discrete of quality.In addition, if the conveying stand-by period of substrate is elongated, then correspondingly the whole base plate processing time is elongated, might cause the reduction of production capacity.
And in base plate processing system in the past, large-scale central conveying device is configured in the central authorities of handling part, disposes the each processing unit group around it, so that guarantee the apron space of conveying arm.For this reason, need bigger space in treating stations, base plate processing system is whole to maximize thereby make.
Summary of the invention
The present invention puts in view of the above problems just and puts forward, its purpose is to realize, under the situation of not using such in the past central conveying device, tackle multiple substrate processing method using same flexibly, and the conveying stand-by period of processing time difference between the reduction substrate and substrate, and then make the base plate processing system miniaturization.
Base plate processing system of the present invention have a plurality of Unit the 1st that can take in substrate and and approaching above-mentioned Unit the 1st between carry out the conveying of substrate Unit the 2nd, above-mentioned Unit the 1st and above-mentioned Unit the 2nd overlook when observing being set up in parallel.And, in a plurality of above-mentioned Unit the 1st some at least, comprising the processing unit of the processing of carrying out substrate, a plurality of above-mentioned Unit the 1st are arranged side by side along the vertical direction.And above-mentioned Unit the 1st can move up at upper and lower, so that at least 2 the 1st neighbouring unit in above-mentioned a plurality of Unit the 1st can be with respect to above-mentioned Unit the 2nd handing-over substrate.
According to the present invention, Unit the 1st can move up at upper and lower, so that can join substrate between at least 2 the 1st unit arranged side by side along the vertical direction and Unit the 2nd, so form many substrate transport path between Unit the 1st and Unit the 2nd.Therefore, even do not use such in the past central conveying device, also can be between the unit of multiple combination conveying substrate, and tackle multiple substrate processing method using same flexibly.In addition, because not such in the past central conveying device, so can reduce the processing time difference of substrate and the conveying stand-by period of substrate.In addition, owing to there is not central conveying device, correspondingly can make the base plate processing system miniaturization.
According to a further aspect in the invention, base plate processing system have a plurality of Unit the 1st that can take in substrate and and approaching above-mentioned Unit the 1st between carry out the conveying of substrate Unit the 2nd.And above-mentioned Unit the 1st and above-mentioned Unit the 2nd overlook when observing being set up in parallel.In addition, the processing unit that in a plurality of above-mentioned Unit the 1st some at least, comprises the processing of carrying out substrate.A plurality of above-mentioned the 1st unit along continuous straight runs are arranged side by side, and then above-mentioned Unit the 1st can move in the horizontal direction, so that at least 2 the 1st adjacent unit of the along continuous straight runs in a plurality of above-mentioned Unit the 1st can be with respect to above-mentioned Unit the 2nd handing-over substrate.
In this case, between Unit the 1st and Unit the 2nd, also form many substrate transport path.Thereby, even do not use such in the past central conveying device, also can be between the unit of multiple combination conveying substrate, and tackle multiple substrate processing method using same flexibly.And then can reduce the mutual processing time difference of substrate, and reduce the discrete of quality.In addition, can reduce the conveying stand-by period of substrate and improve production capacity.Owing to do not have central conveying device, correspondingly can realize the miniaturization of base plate processing system.
In addition, according to a further aspect in the invention, the present invention is the base plate processing system that carries out the processing of substrate, have Unit the 1st and the Unit the 2nd that to take in substrate, at least a certain person of above-mentioned Unit the 1st and Unit the 2nd is equipped with a plurality of, in a certain at least person of above-mentioned Unit the 1st and Unit the 2nd, comprise the processing unit of the processing of carrying out substrate.And, at least a certain person of above-mentioned Unit the 1st and Unit the 2nd, possess and carry out the conveying device that substrate is carried between above-mentioned Unit the 1st and above-mentioned Unit the 2nd, a certain at least person of above-mentioned Unit the 1st and Unit the 2nd moves, and can carry out the conveying of substrate by above-mentioned conveying device.
In addition, according to a further aspect in the invention, base plate processing system of the present invention has treating stations, can take in a plurality of Unit the 1st of substrate, a plurality of Unit the 2nd and a plurality of Unit the 3rd according to this sequence arrangement be equipped in the described treating stations.And above-mentioned Unit the 1st, Unit the 2nd and Unit the 3rd be equipped with a plurality ofly respectively, in a certain at least person of each Unit the 1st, Unit the 2nd and Unit the 3rd, comprises the processing unit of the processing of carrying out substrate.Above-mentioned each Unit the 1st can move up and down, and above-mentioned each Unit the 2nd can move horizontally, and above-mentioned each Unit the 3rd can move up and down.In addition, a certain at least person of above-mentioned Unit the 1st, Unit the 2nd and Unit the 3rd moves, and can join substrate between a certain at least Unit the 1st and a certain at least Unit the 2nd and between a certain at least Unit the 2nd and a certain at least Unit the 3rd.According to this scheme, in treating stations, be set up in parallel Unit the 1st～the 3rd, Unit the 1st and Unit the 3rd move up and down, and the 2nd unit horizontal moves, and can carry out the conveying of substrate between these unit.Thereby, even central conveying device that need not be such in the past also can be tackled the multiple processing method of substrate neatly.
Description of drawings
Fig. 1 is the vertical view that the summary of expression base plate processing system of the present invention constitutes.
Fig. 2 is the end view that the summary of the base plate processing system of presentation graphs 1 constitutes.
Fig. 3 is the rearview that the summary of the base plate processing system of presentation graphs 1 constitutes.
Fig. 4 is the longitudinal section that the summary of expression heating/cooling unit constitutes.
Fig. 5 is the sectional elevation that the summary of expression heating/cooling unit constitutes.
Fig. 6 is the key diagram of travel mechanism of the thermal treatment unit of expression the 1st and the 3rd block.
Fig. 7 is the key diagram of travel mechanism of the liquid-treatment unit of expression the 2nd block.
Fig. 8 is the key diagram of the movable range of expression thermal treatment unit.
Fig. 9 is the key diagram of the movable range of expression thermal treatment unit.
Figure 10 A, Figure 10 B, Figure 10 C are respectively the key diagrams of the movable range of each liquid-treatment unit.
Figure 11 is the key diagram of moving direction of the unit of expression the 1st～the 3rd block.
Figure 12 is the end view that the summary of the expression base plate processing system of having equipped independent mobile thermal treatment unit constitutes.
Figure 13 is the vertical view that the summary of the expression base plate processing system of having equipped independent mobile thermal treatment unit constitutes.
Figure 14 is the key diagram of other movable ranges of express liquid processing unit.
Figure 15 is that explanation has under the situation of N liquid-treatment unit, the key diagram of the movable range of liquid-treatment unit.
Figure 16 is the key diagram of other movable ranges of expression thermal treatment unit.
Figure 17 is that explanation has under the situation of N thermal treatment unit, the key diagram of the movable range of thermal treatment unit.
Figure 18 is illustrated on the above-below direction also the movably key diagram of the travel mechanism of the liquid-treatment unit of the 2nd block.
Figure 19 is the end view of base plate processing system of having equipped the liquid-treatment unit of the 2nd block that can move up and down.
Figure 20 is a vertical view of having equipped the base plate processing system of conveying device at the 2nd block.
Figure 21 is the vertical view of formation that the base plate processing system of dividing plate has been equipped in expression.
What Figure 22 represented is the end view of the summary formation of expression base plate processing system other conveying circuits, Fig. 1.
Embodiment
Below, preferred implementation of the present invention is described.Fig. 1 is the vertical view that the summary of the base plate processing system 1 of expression present embodiment constitutes.
Base plate processing system 1 has the formation that the following part one is connected: carry box station 2, as shown in Figure 1, as will be for example 25 wafer W with box unit from the outside with respect to base plate processing system 1 input and output or with respect to the input part or the load/unload portion of box C input and output wafer W; Treating stations 3 is provided with 2 adjacency ground, this year of box station, possesses a plurality of unit of the various processing of carrying out in the photo-mask process; Interface portion 4 is provided with in abutting connection with ground with this treating stations 3, carries out the handing-over of wafer W between itself and exposure device (not shown).Carry box station 2, treating stations 3 and interface portion 4, be connected in series towards Y direction (left and right directions of Fig. 1).
The adjacent treating stations 3 with carrying box station 2 for example is equipped with 3 block B1, B2, B3 with a plurality of unit.For example, in treating stations 3, interface portion 4 sides from year box station 2 side direction and be set up in parallel the 1st block B1, the 2nd block B2 and the 3rd block B3 successively.
In the 1st block B1, for example dispose 2 unit group G1, G2 being set up in parallel along directions X.
As shown in Figure 2, the one 1 unit group G1 inner stacks has for example a plurality of thermal treatment units as Unit the 1st (or Unit the 2nd).For example, in the 1st unit group G1, from the heating/ cooling unit 20,21,22,23,24 of following overlapping successively heat treated of for example carrying out wafer W and cooling processing with carry out the adhesion processing of wafer W and the adhesion/cooling unit 25 of cooling processing, and be laminated into 6 layers.For example, adjacent 2 unit on above-below direction, promptly heating/ cooling unit 20 and 21, heating/ cooling unit 22 and 23, heating/cooling unit 24 and adhesion/cooling unit 25 respectively become one group and by integrated.
In the 2nd unit group G2, for example same with the 1st unit group G1, as shown in Figure 3,, and be laminated into 6 layers from following overlapping successively heating/ cooling unit 30,31,32,33,34 and adhesion/cooling unit 35 as Unit the 1st (or Unit the 2nd).
At this, the formation of heating/cooling unit 20 of the 1st unit group G1 is described.As shown in Figure 4, heating/cooling unit 20 possesses in housing 40: carry out wafer W heat treated heating part 41 and carry out the cooling end 42 of the cooling processing of wafer W.Heating part 41 and cooling end 42 are set up in parallel along directions X, for example, as shown in Figure 1, cooling end 42 are configured in the inboard (directions X positive direction side) for the treatment of stations 3, heating part 41 are configured in the outside (directions X negative direction side) for the treatment of stations 3.
As shown in Figure 4, heating part 41 comprises: lid 50, be positioned at upside, and move up and down freely; Hot plate incorporating section 51 is positioned at downside, becomes one with lid 50 and forms process chamber S.Lid 50 forms the roughly cylindric of lower aperture, is formed with exhaust portion 50a at the central portion of lid 50.
Central authorities in hot plate incorporating section 51 are provided with the heating plate 52 of mounting and heated chip W.Heating plate 52 is the roughly disc-shape that thickness is arranged.Be built-in with the heater 53 that generates heat by power supply in the inside of heating plate 52.By the heat of this heater 53, can the wafer W on the heating plate 52 be heated.Heating plate 52 is fixed on the hot plate incorporating section 51 via this support ring 54 by support ring 54 supportings of ring-type.
On the upper surface of support ring 54, be formed with and in process chamber S, spray for example blow-off outlet 54a of non-active gas.
Near the central portion of heating plate 52, be formed with the through hole 55 that on thickness direction, connects.In through hole 55, dispose the top that the 1st lifter pin 57, the 1 lifter pins 57 that carry out lifting by lift drive mechanisms such as pressure cylinder 56 can be projected into heating plate 52.
With the adjacent cooling end 42 in heating part 41 in, for example be provided with mounting and cool off the coldplate 60 of wafer W.Coldplate 60 for example as shown in Figure 5, is the writing board shape of general square shape, and the end face of heating part 41 sides bends to circular-arc.In the inside of coldplate 60, for example be built-in with cooling-parts (not shown) such as Peltier's element, thereby coldplate 60 can be adjusted to the design temperature of regulation.
As shown in Figure 4, coldplate 60 is installed on the track 61 of heating part 41 sides extension.Coldplate 60 can move on track 61 by drive division 62.Coldplate 60 can move back and forth above the heating plate 52 and between the cooling end 42.
On coldplate 60, for example as shown in Figure 5, be formed with 2 lines of rabbet joint 63 along directions X.By this line of rabbet joint 63, prevent to move to the interference of the coldplate 60 and the 1st lifter pin 57 of heating part 41 sides, the 1st lifter pin 57 can be projected into the top of this coldplate 60.Thus, the wafer W on the coldplate 60 can be handed off on the 1st lifter pin 57, and from the 1st lifter pin 57 with the wafer W mounting to heating plate 52.In addition, the wafer W on the heating plate 52 can also be handed off on the 1st lifter pin 57, and from the 1st lifter pin 57 with the wafer W mounting to coldplate 60.
As shown in Figure 4, in the line of rabbet joint 63 of coldplate 60, be provided with the 2nd lifter pin 64.The 2nd lifter pin 64 can be projected into the top of coldplate 60 by 65 liftings of lifting drive division.By the 2nd lifter pin 64, can make the wafer W come-up of coldplate 60, and be handed off on the conveying device 80 described later.
For example, as shown in Figure 5,, be formed with and be used for the delivery port 70 of input and output wafer W on the two sides on Y direction coldplate 60, housing 40.
Across coldplate 60, be provided with conveying device 80, transfer wafers W between the unit of this conveying device 80 in coldplate 60 and the 2nd block B2 described later at the opposition side of heating plate 52.Conveying device 80 for example is configured in and leans on Y direction positive direction side place than central authorities, promptly partially by on the position of the 2nd block B2.Conveying device 80 is conveying automatons of for example multi-joint type.For example, conveying device 80 comprises: retractile in the horizontal direction 2 arm 80a and the rotating driveshaft 80b of this arm 80a is installed.Conveying device 80 is controlled wafer W by 2 arm 80a, makes wafer W towards the direction of carrying the destination by rotating driveshaft 80b, and by arm 80a wafer W is advanced and retreat in the horizontal direction, wafer W can be transported to the conveying destination of regulation thus.By this conveying device 80, can between heating/cooling unit 20 and liquid-treatment unit, join wafer W near the 2nd block B2 of this heating/cooling unit 20.
Other heating/ cooling units 21,22,23,24 of the 1st unit group G1 for example have the formation same with above-mentioned heating/cooling unit 20.Adhesion/cooling unit 25 for example has the formation roughly the same with above-mentioned heating/cooling unit 20.For example, adhesion/cooling unit 25 has supply port, substitutes the exhaust outlet 50a of lid 50, this supply port will be used to improve resist liquid close property be close to hardening agent, supply in the process chamber S as the steam of HMDS.In addition, adhesion/cooling unit 25 has exhaust outlet, substitutes the blow-off outlet 54a of support ring 54, and this exhaust outlet is discharged the atmosphere gas in the process chamber S.Other parts and heating/cooling unit 20 are same, and adhesion/cooling unit 25 is equipped with heating plate 52, coldplate 60 and conveying device 80 etc.In addition, for the component parts of the thermal treatment unit of the 1st unit group G1, adopt title and the Reference numeral same with above-mentioned heating/cooling unit 20.
As mentioned above, as shown in Figure 6, heating/cooling unit 20 and heating/cooling unit 21, heating/cooling unit 22 and heating/cooling unit 23, heating/cooling unit 24 and the adhesion/cooling unit 25 of the thermal treatment unit in the 1st unit group G1, respectively in groups, and by integrated.These thermal treatment units, every group is all kept by holding member 90, is installed on the guide 91 that extends along the vertical direction.The every composition one of thermal treatment unit for example can move up at upper and lower along guide 91 by driving mechanism 92.In addition, the movable range for thermal treatment unit describes in the back.In addition, the movable range of the thermal treatment unit of the 1st unit group G1 can be set at, and each liquid-treatment unit of aftermentioned the 2nd block B2 can be with respect to a plurality of thermal treatment unit transfer wafers W of above-below direction.
Heating/the cooling unit 30～34 of the 2nd unit group G2 and adhesion/cooling unit 35 have the identical formation of thermal treatment unit with above-mentioned the 1st unit group G1.And each thermal treatment unit of these Unit the 2nd group G2 has and travel mechanism shown in the same Fig. 6 of the 1st unit group G1, and per two adjacent unit are kept by holding member 90, can move up and down the height of regulation by driving mechanism 92 along guide 91.In addition, for the component parts of the thermal treatment unit of the 2nd unit group G2, adopt title and the Reference numeral same with above-mentioned heating/cooling unit 20.
The thermal treatment unit of the 1st unit group G1 and the 2nd unit group G2 for example is configured to as shown in Figure 1, and mutual coldplate 60 is approaching and opposed near the central authorities for the treatment of stations 3.
As shown in Figure 2, in the 2nd block B2 for the treatment of stations 3, dispose along above-below direction stacked for example 3 elementary layer H1, H2, H3.Be provided with a plurality of conducts in each elementary layer H1～H3 and carry out the liquid-treatment unit of Unit the 2nd of the liquid handling of wafer W (or Unit the 1st).
For example, in undermost the 1st elementary layer H1, the horizontal direction towards directions X is set up in parallel the development treatment unit 100,101,102 that oriented wafer W is supplied with developer solution and carried out development treatment as shown in Figure 7.In the 2nd elementary layer H2 in middle level, be set side by side with the top coating unit 110,111,112 that for example forms antireflection film towards the horizontal direction of directions X on the upper strata of resist film.In the 3rd elementary layer H3 of the superiors, for example be set side by side with on the wafer W resist coating element 120 of coating resist liquid, form bottom coating element 121, the resist coating element 122 of antireflection film in the lower floor of resist film towards the horizontal direction of directions X.In each liquid-treatment unit of the 2nd block B2, be provided with the cover P that takes in wafer W, prevents liquid splash.
The development treatment unit 100～102 of the 1st elementary layer H1 for example as Fig. 1 and shown in Figure 7, is accommodated in the housing 130.On housing 130 for example is positioned in and is formed at track 132 on the base station 131 towards directions X.Housing 130 for example moves freely on track 132 by driving mechanism 133.Thus, as shown in Figure 1, each development treatment unit 100～102 of the 1st elementary layer H1 can move on the horizontal direction of directions X with respect to the 1st block B1 of adjacency and the thermal treatment unit of the 3rd block B3.In the both sides of the Y of housing 130 direction, as shown in Figure 7, for example on each development treatment unit 100～102, be formed with the delivery port 134 of wafer W.By this delivery port 134, utilize 80 pairs of wafer W of conveying device of thermal treatment unit to carry.The movable range of development treatment unit 100～102 for example can be set to, and each thermal treatment unit of the 1st and the 3rd block B1, B3 can be with respect to a plurality of development treatment unit transfer wafers W.
As shown in Figure 7, the 2nd elementary layer H2 also has the identical formation with the 1st elementary layer H1 with the 3rd elementary layer H3, the 2nd elementary layer H2 and the 3rd elementary layer H3 a plurality of liquid-treatment unit separately are incorporated in the housing 130, can move horizontally on track 132 towards directions X by driving mechanism 133.In addition, the back describes the movable range of liquid-treatment unit.
In the 3rd block B3 for the treatment of stations 3, be provided with 2 unit group I1, I2 being set up in parallel along directions X.In each unit group I1, I2, for example be laminated with a plurality of thermal treatment units as Unit the 3rd.
For example, in the 1st unit group I1, as shown in Figure 2,, and be laminated into 6 layers from following overlapping successively heating/cooling unit 140,141,142,143,144,145.For example, in the 2nd unit group I2, as shown in Figure 3,, and be laminated into 6 layers from following overlapping successively heating/cooling unit 150,151,152,153,154,155.
Each heating/cooling unit 140～145,150～155 of the 1st unit group I1 and the 2nd unit group I2, have the formation same, comprise heating plate 52, coldplate 60 and other conveying device 80 as conveying device with heating/cooling unit 20 of above-mentioned the 1st block B1.By each heating/cooling unit of this conveying device 80, the 1 unit group I1 and the 2nd unit group I2, can and the liquid-treatment unit of the 2nd block B2 between transfer wafers W.In addition, the component parts of each heating/cooling unit of the 1st unit group I1 and the 2nd unit group I2 adopts and title and Reference numeral that above-mentioned heating/cooling unit 20 is same.
Heating/cooling unit of the 1st unit group I1 and the 2nd unit group I2 for example as shown in Figure 1, is configured to mutual coldplate 60 near also opposed.
Heating/cooling unit of the 1st unit group I1 and the 2nd unit group I2, for example as Fig. 2 and shown in Figure 3,2 of adjacency unit respectively become one group each other up and down, and by integrated.
In addition, heating/cooling unit of the 1st unit group I1 and the 2nd unit group I2, as shown in Figure 6, have the travel mechanism same with the thermal treatment unit of the 1st block B1, per two adjacent unit are maintained on the holding member 90, by driving mechanism 92, can move up and down the height of regulation along guide 91.In addition, the movable range of this thermal treatment unit illustrates in the back.
The movable range of the thermal treatment unit of the 1st and the 2nd unit group I1, I2 can be set for, and each liquid-treatment unit of the 2nd block B2 can be with respect to a plurality of thermal treatment unit transfer wafers W of above-below direction.
At this, the movable range of the thermal treatment unit of the 1st block B1 is described.In the present embodiment, as Fig. 2 and shown in Figure 3, form 3 groups of thermal treatment units, it is roughly corresponding with each elementary layer H1～H3 of the 2nd block B2 that this respectively organizes thermal treatment unit.The thermal treatment unit of each group moves up and down integratedly, and 2 thermal treatment units up and down of each group at least can be with respect to the liquid-treatment unit handing-over wafer W of its corresponding elementary layer.For example as shown in Figure 8, the position of the delivery port 70 of a thermal treatment unit K is moved to, be in can and the liquid-treatment unit L of elementary layer Hx between on the position of delivery outlet 70 under the state of handing-over wafer W, another thermal treatment unit K.In the present embodiment, thermal treatment unit moves up and down in a wider context, and as shown in Figure 9, each is organized thermal treatment unit K and moves to elementary layer Hy with corresponding elementary layer Hx adjacency, with respect to the liquid-treatment unit of this elementary layer Hy, also can join wafer W.
For example, lower floor's heating/ cooling unit 20,21 of the 1st unit group G1 shown in Figure 2 can move up and down the 2nd elementary layer H2 from the 1st elementary layer H1, and with respect to the liquid-treatment unit of the 1st elementary layer H1 and the 2nd elementary layer H2 handing-over wafer W.Heating/the cooling unit 22,23 in middle level can move up and down the 1st elementary layer H1 or the 3rd elementary layer H3 from the 2nd elementary layer H2, with respect to the liquid-treatment unit handing-over wafer W of whole elementary layers.In addition, the heating/cooling unit 24 on upper strata and adhesion/cooling unit 25 can move up and down the 2nd elementary layer H2 from the 3rd elementary layer H3, with respect to the liquid-treatment unit handing-over wafer W of the 3rd elementary layer H3 and the 2nd elementary layer H2.Thus, the thermal treatment unit of each group, can be at least in 2 elementary layer scopes up and down transfer wafers W.
In addition, the movable range of respectively organizing thermal treatment unit of the 2nd unit group G2 of the 1st block B1, same with the thermal treatment unit of the 1st unit group G1, can be at least in 2 elementary layer scopes up and down transfer wafers W.
Below, the movable range of the liquid-treatment unit of the 2nd block B2 is described.The liquid-treatment unit of each elementary layer can move horizontally, so that adjacent at least 2 liquid-treatment unit on directions X of each elementary layer, can be with respect to the shared thermal treatment unit handing-over wafer W of the 1st block B1.For example, the delivery port position of a liquid-treatment unit is moved to, be in can and certain thermal treatment unit between under the state of handing-over wafer W, on the delivery outlet position of adjacent liquid processing unit.
For example, shown in Figure 10 A, when housing 130 is positioned at central on the directions X for the treatment of stations 3, the liquid-treatment unit Lx of directions X positive direction end for example, be positioned at the front of the thermal treatment unit Kx of the 2nd unit group G2, mutual delivery port 70,134 is mutually opposed, can join wafer W between liquid-treatment unit Lx and thermal treatment unit Kx.In addition, this moment, the liquid-treatment unit Ly of directions X negative direction end was in the front of the thermal treatment unit Ky of the 1st unit group G1, and mutual delivery port 70,134 is opposed mutually, can join wafer W (Figure 10 A) between liquid-treatment unit Ly and thermal treatment unit Ky.
Then, by housing 130 moving to directions X positive direction side, the liquid-treatment unit Lz of central authorities is movable to the front of the thermal treatment unit Kx of the 2nd unit group G2, and mutual delivery port 70,134 is mutually opposed, can join wafer W (Figure 10 B) between liquid-treatment unit Lz and thermal treatment unit Kx.By housing 130 moving to directions X negative direction side, liquid-treatment unit Lz, for example be movable to the front of the thermal treatment unit Ky of the 1st unit group G1, mutual delivery port 70,134 is mutually opposed, can join wafer W (Figure 10 C) between liquid-treatment unit Lz and thermal treatment unit Ky.Thus, by moving of housing 130,2 liquid-treatment unit Lx, Lz can be with respect to thermal treatment unit Kx handing-over wafer W, and 2 liquid-treatment unit Ly, Lz can be with respect to thermal treatment unit Ky handing-over wafer W.
The thermal treatment unit of the thermal treatment unit of the 3rd block B3 and above-mentioned the 1st block B1 is same, and thermal treatment unit of each group can move in 2 elementary layer scopes up and down at least, and with respect to this liquid-treatment unit handing-over wafer W of 2 elementary layers up and down.
As mentioned above, in treating stations 3, as shown in figure 11, the thermal treatment unit of the thermal treatment unit of the 1st block B1, the 3rd block B3 can move up and down.In addition, the liquid-treatment unit of the 2nd block B2 can move horizontally on directions X with housing 130 units of each layer H1～H3.Be provided with conveying device 80 in the thermal treatment unit of the 1st block B1 and the 3rd block B3, this conveying device 80 be used for and the liquid-treatment unit of the 2nd block B2 between transfer wafers W.Thus, the unit of adjacent block moves relative to each other, and in its movable range, can carry out the conveying of wafer W between any unit between the 1st block B1 and the 2nd block B2, between the 2nd block B2 and the 3rd block B3.
As shown in Figure 2, be provided with Denso/chemical chamber 160 in the bottom for the treatment of stations 3, wherein take in the power supply etc. of each unit of the supply source of various treatment fluids of each liquid-treatment unit that supplies to the 2nd block B2 and each block B1～B3.
Treating stations 3 sides in interface portion 4 for example as shown in Figure 1, are provided with wafer transport body 170.In the Y of interface portion 4 direction positive direction side, be set side by side with along directions X: only the peripheral exposing unit 171,172 that optionally the edge portion of wafer W is exposed and be used for and exposure device (not shown) between carry out the handing-over of wafer W handing-over box 173.Handing-over box 173 is arranged between the peripheral exposing unit 171,172.
Next, the processing procedure to the wafer W of being carried out in the base plate processing system 1 that constitutes as mentioned above describes.
At first, the untreated wafer W of box C as shown in Figure 1, is imported by wafer transport body 11 in the 1st block B1 for the treatment of stations 3 successively.For example, wafer W is imported into adhesion/cooling unit 25 of the 1st unit group G1 or adhesion/cooling unit 35 of the 2nd unit group G2.In addition, also can be designed to, wafer W is transported in it carries constantly empty adhesion/cooling unit.
For example, be input to the wafer W in adhesion/cooling unit 25, at first on coldplate 60, be adjusted into the temperature of regulation, be transported to heating plate 52 from coldplate 60 again.Wafer W is heated to the temperature of regulation on heating plate 52, and applies the steam of HMDS on wafer W.Then, make wafer W turn back to coldplate 60, be transported to for example resist coating element 120 (shown in the arrow of Fig. 2) of the 3rd elementary layer H3 on the upper strata that is positioned at the 2nd block B2 by conveying device 80.In addition, wafer W also can be transported to the resist coating element 122 of the 3rd elementary layer H3.In addition, also can be designed to, wafer W is transported at it and carries constantly empty resist coating element.
Under the situation about when carrying, staggering as the position of for example resist coating element 120 of carrying the destination and adhesion/cooling unit 25, as shown in Figure 2, adhesion/cooling unit 25 moves up at upper and lower, or as shown in Figure 1, resist coating element 120 moves in the horizontal direction, thereby adhesion/cooling unit 25 and resist coating element 120 relatively move, and can be undertaken in the scope of wafer W conveying by conveying device 80 so that enter.In addition, relatively moving between these unit both can be a side cell moving only, also can be that two sides' unit all moves.
Wafer W is transported in adhesion/cooling unit 35 of the 2nd unit group G2 situation too, after the adhesion processing finishes, wafer W is transported to the resist coating element 120 or 122 of the 2nd block B2.
For example, on the wafer W that is transported to resist coating element 120, coating resist liquid.Then, as shown in Figure 2, wafer W is transported to for example heating/cooling unit 24 of the 1st unit group G1 upper layer side that is positioned at the 1st block B1 from resist coating element 120.In addition, wafer W also can be transported to other can be transported to wafer W heating/cooling unit in the top coating unit that carries out next processing, for example, be positioned at the heating/cooling unit 23 in group G1 middle level, Unit the 1st or heating/ cooling unit 33,34 of the 2nd unit group G2 etc.In addition, also can be designed to, wafer W is transported to heating/cooling unit of carrying the 1st constantly empty block B1 at it.
For example, by the conveying device 80 of heating/cooling unit 24, carry out wafer W from the conveying of resist coating element 120 to heating/cooling unit 24.In addition, under the situation about staggering when the position of the heating/cooling unit 24 of carrying the destination and resist coating element 120, heating/cooling unit 24 and resist coating element 120 relatively move, heating/cooling unit 24 and resist coating element 120 mutually near after, come transfer wafers W by conveying device 80.
For example, be transported to the wafer W of heating/cooling unit 24, be transported to heating plate 52 from coldplate 60, by prebake.After prebake finished, wafer W turned back to coldplate 60.After this, by conveying device 80 wafer W is transported to for example top coating unit 110 of the 2nd elementary layer H2 that is positioned at the 2nd block B2 middle level.In addition, wafer W can also be transported to other top coating unit 111,112 of the 2nd elementary layer H2.In addition, can also be designed to, wafer W is transported to the top coating unit of carrying the 2nd constantly empty block B2 at it.
During conveying, heating/cooling unit 24 for example drops to the height of the 2nd elementary layer H2 from the height of the 1st elementary layer H1.In addition, in the 2nd elementary layer H2, carry for example top coating unit 110 of destination, be moved horizontally to the front of heating/cooling unit 24, after this by conveying device 80 transfer wafers W.
The coating reflection prevents liquid on the wafer W of top coating unit 110 for example being transported to, and forms antireflection film.After this, wafer W is transported to the heating/cooling unit 142 in for example middle level of the 1st unit group I1 that is positioned at the 3rd block B3 from top coating unit 110.In addition, wafer W also can be transported to other heating/cooling units that can conduct interviews with respect to top coating unit 110, for example is positioned at the heating/cooling unit 143 in group I1 middle level, Unit the 1st or heating/cooling unit 152,153 of the 2nd unit group I2 etc.In addition, also can be designed to, wafer W is transported to heating/cooling unit of carrying the 3rd constantly empty block B3 at it.
By the conveying device 80 of heating/cooling unit 142, carry out wafer W from the conveying of top coating unit 110 to heating/cooling unit 142.In addition, under the situation about staggering when the position of for example heating/cooling unit 142 of carrying the destination and top coating unit 110, heating/cooling unit 142 and top coating unit 110 relatively move, make that heating/cooling unit 142 and top coating unit 110 are approaching mutually, by conveying device 80 transfer wafers W.
For example, be transported to the wafer W of heating/cooling unit 142, be transported to heating plate 52 and be heated from coldplate 60.Wafer W after heating finishes turns back to coldplate 60, and after this wafer transport body 170 by interface portion 4 is transported to for example peripheral exposing unit 171.In peripheral exposing unit 171, the periphery of wafer W is exposed.After this, wafer W is transported to handing-over box 173, is transported to exposure device (not shown), and exposes near interface portion 4 by wafer transport body 170.
Wafer W after exposure-processed finishes turns back to handing-over box 173, by wafer transport body 170, is transported to for example heating/cooling unit 140 of the 1st unit group I1 lower layer side that is positioned at the 3rd block B3.In addition, wafer W also can be transported to other and wafer W can be transported to heating/cooling unit 141,150,151 in the development treatment unit that carries out next processing etc.In addition, can also be designed to, wafer W is transported to heating/cooling unit of carrying the 3rd constantly empty block B3 at it.
Be transported to for example wafer W of heating/cooling unit 140, be transported to heating plate 52, implement the post-exposure oven dry from coldplate 60.Wafer W after the post-exposure oven dry finishes turns back to coldplate 60, is transported to for example development treatment unit 100 of the 1st elementary layer H1 of the 2nd block B2 by conveying device 80.In addition, wafer W can also be transported to other development treatment unit 101,102 of the 1st elementary layer H1.In addition, can also be designed to, wafer W is transported to the development treatment unit of carrying the 2nd constantly empty block B2 at it.
Under the situation that stagger in the position of for example heating/cooling unit 140 of conveying destination and development treatment unit 100 when carrying, heating/cooling unit 140 and development treatment unit 100, on above-below direction and horizontal direction, relatively move, heating/cooling unit 140 and development treatment unit 100 are approaching mutually, by conveying device 80 transfer wafers W.
For example being transported to, the wafer W of development treatment unit 100 is developed.Wafer W after the development treatment is transported to for example heating/cooling unit 20 of the 1st unit group G1 lower layer side that is positioned at the 1st block B1.In addition, wafer W also can be transported to other unit that can conduct interviews with respect to development treatment unit 100, for example is positioned at the heating/cooling unit 21 of the 1st unit group G1 lower layer side or is positioned at heating/ cooling unit 30,31 of the 2nd unit group G2 lower layer side etc.In addition, can also be designed to, wafer W is transported to heating/cooling unit of carrying the 1st constantly empty block B1 at it.
By the conveying device 80 of heating/cooling unit 20, carry out wafer W from the conveying of development treatment unit 100 to heating/cooling unit 20.In addition, under the situation about staggering in the position of the heating/cooling unit 20 of carrying the destination and development treatment unit 100, heating/cooling unit 20 and development treatment unit 100 relatively move, and heating/cooling unit 20 and development treatment unit 100 are approaching mutually, by conveying device 80 transfer wafers W.
Be transported to for example wafer W of heating/cooling unit 20, be transported to heating plate 52, implement the back oven dry from coldplate 60.Wafer W after the back oven dry finishes turns back to coldplate 60, turns back to box C by the wafer transport body 11 that carries box station 2.So a series of photo-mask process finishes.
According to above execution mode, 2 thermal treatment units of each group of the 1st block B1 for the treatment of stations 3 and the 3rd block B3 for can be with respect to shared liquid-treatment unit handing-over wafer W, and can move up and down.In addition, 2 adjacent liquid-treatment unit of the 2nd block B2 for can be with respect to shared thermal treatment unit handing-over wafer W, and can move horizontally.By such design, the unit of the 1st block B1 and the 2nd block B2 each other, and the unit of the 2nd block B2 and the 3rd block B3 move relative to each other, can be between the unit of adjacent block multiple combination each other transfer wafers W.Thereby, in treating stations 3, form the transport path unit, wafer W by multiple combination.As a result, in base plate processing system 1, can realize the multiple conveying flow process of wafer W, thus can be corresponding with the multiple processing method of wafer W neatly.In addition, owing to there has not been such in the past central conveying device, and can between the unit, carry flexibly and successfully, so it is poor to reduce the conveying stand-by period of processing time difference between wafer W and wafer W, realize the quality homogenizing of processing of wafers and the raising of production capacity.And then, need not to be used for to be provided with central conveying device than large space, correspondingly can make base plate processing system 1 miniaturization.
Since in the thermal treatment unit of the 1st block B1 and the 3rd block B3, be provided with conveying device 80, thus can be according to the order of the 1st block B1, the 2nd block B2, the 3rd block B3 and interface portion 4, and straight line is carried the wafer W of carrying box station 2.In addition, can make wafer W between the 1st block B1 and the 2nd block B2 and between the 2nd block B2 and the 3rd block B3 back and forth after, wafer W is transported to interface portion 4.Turning back to from interface portion 4 when carrying box station 2 too, can be according to the 3rd block B3, the 2nd block B2, the 1st block B1, carry the batch transportation wafer W at box station 2.And can make wafer W between the 3rd block B3 and the 2nd block B2 and between the 2nd block B2 and the 1st block B1 back and forth after, be transported to and carry a box station 2.
In the above-described embodiment, in the 2nd block B2, along continuous straight runs is arranged a plurality of liquid-treatment unit of ground configuration, and make that these a plurality of liquid-treatment unit can move in the horizontal direction, therefore, each thermal treatment unit of the 1st and the 3rd block B1, B3 can be with respect to a plurality of liquid-treatment unit transfer wafers W on the horizontal direction of the 2nd block B2.And each liquid-treatment unit of the 2nd block B2 can be with respect to the many groups thermal treatment unit transfer wafers W on the horizontal direction of the 1st and the 3rd block B1, B3.
In addition, a plurality of thermal treatment unit stacked on top of one another of the 1st and the 3rd block B1, B3 and can moving up and down, therefore, each liquid-treatment unit of the 2nd block B2 can be with respect to a plurality of thermal treatment unit transfer wafers W on the above-below direction of the 1st and the 3rd block B1, B3.And each thermal treatment unit of the 1st and the 3rd block B1, B3 can be with respect to the multilayer liquid processing unit transfer wafers W on the above-below direction of the 2nd block B2.
In the above-described embodiment, the 1st block B1 and the 3rd block B3 respectively organize thermal treatment unit and can move up and down in 2 elementary layer scopes up and down, but, as long as each organize both sides' thermal treatment unit can be with respect to the liquid-treatment unit of minimum elementary layer handing-over wafer W.In addition, also can be designed to, thermal treatment unit of each group can all move up and down in elementary layer H1～H3 scope, and with respect to the liquid-treatment unit handing-over wafer W of whole elementary layer H1～H3.In this case, for example also can be in the following way: compare with the 2nd block B2, enlarge the 1st block B1 and the width of the 3rd block B3 on above-below direction, make that the thermal treatment unit of orlop group can be with respect to the liquid-treatment unit handing-over wafer W of the elementary layer H3 of the superiors, the thermal treatment unit of uppermost group can be with respect to the liquid-treatment unit handing-over wafer W of undermost elementary layer H1.
In the above-described embodiment, adjacent 2 liquid-treatment unit of each elementary layer of the 2nd block B2 move horizontally, so that can be with respect to the shared thermal treatment unit handing-over wafer W of the 1st block B1 and the 3rd block B3, but also can be designed to, the whole liquid-treatment unit in each elementary layer can both be with respect to shared thermal treatment unit handing-over wafer W.In this case, for example also can be in the following way: compare with the 1st block B1 and the 3rd block B3, enlarge the width of the 2nd block B2 on the horizontal direction of directions X, so that housing 130 can move horizontally in wideer scope.And can also be designed to: the liquid-treatment unit of directions X positive direction end can be with respect to the thermal treatment unit handing-over wafer W of the 1st unit group G1, and the liquid-treatment unit of directions X negative direction end can be with respect to the thermal treatment unit handing-over wafer W of the 2nd unit group G2.By such design, increased the combination of the unit that can carry, can form more wafer W transport path.
In the above-described embodiment, the B1 of the 1st and the 3rd block, the thermal treatment unit of B3 move up and down respectively in groups, still, also can be as shown in figure 12, each thermal treatment unit moves up and down respectively.In this case, the degree of freedom that each thermal treatment unit moves is increased, so the conveying opportunity of wafer W and the degree of freedom of transport path also increase.The result can reduce the discrete of processing time between conveying stand-by period of wafer W and wafer.
In addition, each layer liquid-treatment unit of the 2nd block B2 moves horizontally in each housing 130 with being integral, still, also can be designed to as shown in figure 13, and each liquid-treatment unit moves horizontally respectively independently.In this case, for example corresponding each liquid-treatment unit all is provided with housing 130.Because the degree of freedom that moves of each liquid-treatment unit is increased, thus the conveying opportunity of wafer W and the degree of freedom of transport path also increase, thereby can be with more suitable transfer wafers W on opportunity.
In the above-described embodiment, each liquid-treatment unit of the 2nd block B2 moves horizontally the degree that is equivalent to a unit, but, so long as at least 2 adjacent liquid-treatment unit of along continuous straight runs can be with respect to the scope of shared thermal treatment unit handing-over wafer W, then also can be designed to as shown in figure 14, by moving of housing 130, each liquid-treatment unit Lx, Ly, Lz move horizontally in interior scope in the amount of a unit.
In addition, also can be designed to each liquid-treatment unit moves horizontally more than the amount of a unit.For example, be arranged with at identical as shown in figure 15 liquid-treatment unit L along continuous straight runs under the situation of N (N is the natural number more than 2), can be designed to, liquid-treatment unit L moves horizontally the amount of N-1 unit integratedly.For example, be that liquid-treatment unit can move horizontally the amount of 2 unit under 3 the situation in liquid-treatment unit.By such design, all liquid-treatment unit L can be with respect to shared thermal treatment unit Kx, Ky handing-over wafer W.For example, the liquid-treatment unit of directions X negative direction end can be with respect to the thermal treatment unit Kx handing-over wafer W of the 2nd unit group G2, and the liquid-treatment unit of directions X positive direction end can be with respect to the thermal treatment unit Ky handing-over wafer W of the 1st unit group G1.
In addition, each thermal treatment unit of the above-mentioned the 1st and the 3rd block B1, B3, move up and down the amount of an about unit, but so long as at least 2 adjacent along the vertical direction thermal treatment units can be with respect to the scope of shared liquid-treatment unit handing-over wafer W, then also can be as shown in figure 16, each processing unit K moves up and down in interior scope in the amount of a unit.In addition, also can be designed to, each thermal treatment unit moves up and down more than the amount of a unit.
In the above-described embodiment, 2 thermal treatment units move up and down integratedly, still, as shown in figure 17, under the situation that the N more than 2 identical thermal treatment unit K moves up and down integratedly, also can be designed to, the thermal treatment unit K of this one can move up and down the amount of N-1 unit.Like this, all thermal treatment unit K can both be with respect to shared liquid-treatment unit L handing-over wafer W.
The liquid-treatment unit of the 2nd block B2 described in the above-mentioned execution mode can move horizontally, but also can be designed to and can also move up and down.In this case, for example, as shown in figure 18, the base station 131 of the housing 130 of each elementary layer H1～H3 is kept by holding member 200, and is installed on the guide 201 that extends along the vertical direction.The base station 131 of housing 130 by driving mechanism 202, can move up and down along guide 201.Thus, the liquid-treatment unit of each elementary layer H1～H3 can move up and down respectively.During transfer wafers W, as required, the liquid-treatment unit in the 2nd block B2 is moved up and down at transfer wafers W between the 1st block B1 and the 2nd block B2 or between the 2nd block B2 and the 3rd block B3.Like this, for example, the more thermal treatment unit of the 1st and the 3rd block B1, B3 can conduct interviews with respect to the liquid-treatment unit of the 2nd block B2, thereby can form the transport path of more wafer W.
In the above-described embodiment, conveying device 80 is arranged in the thermal treatment unit of the 1st block B1 and the 3rd block B3, still, as shown in figure 20, also conveying device 80 can be arranged in the liquid-treatment unit of the 2nd block B2.In this case, also conveying device 80 can be set at the 1st block B1 and the 3rd block B3 side.In this case, by the conveying device 80 of the 2nd block B2, can be between the 1st block B1 and the 2nd block B2 and the conveying of carrying out wafer W between the 2nd block B2 and the 3rd block B3.
In addition, conveying device 80 also can be arranged among the liquid-treatment unit of the thermal treatment unit of the 1st block B1 and the 3rd block B3 and the 2nd block B2.Under the situation in the liquid-treatment unit that conveying device 80 is arranged on the 2nd block B2, conveying device 80 can be set in whole liquid-treatment unit, and conveying device 80 only is set in specific liquid-treatment unit.In addition, about the 1st block B1 described in the above-mentioned execution mode and the unit of the 3rd block B3, can all in the unit conveying device 80 be set too, and conveying device 80 only is being arranged in the specific unit.
In addition, also can be designed to: make the coldplate 60 of thermal treatment unit have conveying function, coldplate 60 rotates, and advances and retreat with respect to the liquid-treatment unit of the 2nd block B2, thereby can directly conduct interviews to liquid-treatment unit.
As shown in figure 21, can between adjacent each block for the treatment of stations 3, dividing plate 220 be set.In this case, dividing plate 220 has air-cooled type or water-cooled thermal insulation construction.Like this, the heat of the thermal treatment unit of the 1st and the 3rd block B1, B3 can not cause bad influence to the liquid-treatment unit of the 2nd block B2.In addition, on dividing plate 220, be formed with not shown wafer delivery port.Also valve can be set on wafer delivery port.
Below with reference to the accompanying drawings preferred implementation of the present invention is illustrated, but the present invention not only is defined in these examples.If those of ordinary skills in the thought category that claim is put down in writing, obviously can obtain various variation or modification, these distortion and modification also belong to technical scope of the present invention certainly.
The transport path of wafer W is not limited to the situation of above-mentioned execution mode.For example do not forming antireflection film and only forming under the situation of resist film on the upper strata of resist film, also can followingly carry: wafer W is in resist coating element 120 after the coated resist, be transported to the heating/cooling unit of the 3rd block B3 side, after this, similarly be transported to interface portion 4 sides with above-mentioned execution mode.
In addition, form in the lower floor of resist film under the situation of antireflection film, wafer W is transported to the bottom coating element 121 of the 2nd block B2 again from carrying heating/cooling unit that box station 2 is transported to the 1st block B1 from this heating/cooling unit.In bottom coating element 121, applied the wafer W of antireflection film, be transported to for example heating/cooling unit of the 1st block B1, then with above-mentioned execution mode similarly, be transported to again in the resist coating element of the 2nd block B2.The wafer W that the resist that is through with coating is handled, both can be sent to for example top coating unit 110 of the 2nd block B2 via heating/cooling unit of the 1st or the 3rd block B1, B3, also can be transported to heating/cooling unit of the 3rd block B3, be sent to interface portion 4 then.Like this, can select the transport path of wafer W arbitrarily according to the wafer W processing method.
In addition, also can carry out conveying between the unit of wafer W in the 1st block B1 by the wafer transport body 11 that carries box station 2.For example can be in the following way: untreated wafer W is transported in heating/cooling unit of the 1st block B1 by wafer transport body 11, then, by wafer transport body 11 will heat/wafer W of cooling unit is transported in adhesion/cooling unit.In addition, also can carry out conveying between the unit of wafer W in the 3rd block B3 by the wafer transport body 170 of interface portion 4.
In the described in the above-described embodiment treating stations 3, only be provided with the processing unit of the processing of carrying out wafer W, but as required, also can be provided with the processing of not carrying out wafer W, for example carry out the handing-over unit of handing-over of wafer W or the alignment unit that carries out contraposition.
Though the treating stations 3 described in the above-mentioned execution mode comprises 3 block B1～B3, its quantity can be selected arbitrarily.The quantity of the block group of the 1st and the 3rd block B1, B3 also can be selected arbitrarily.And the quantity of the elementary layer of the 2nd block B2 also can be selected arbitrarily.
In each unit group of the 1st block B1 and the 3rd block B3, stacked 6 thermal treatment units, but its quantity and kind can be selected arbitrarily.In addition, in each elementary layer of the 2nd block B2,3 liquid-treatment unit are arranged side by side, but its value volume and range of product also can be selected arbitrarily.
In the above-described embodiment, the thermal treatment unit of the 1st and the 3rd block B1, B3 moves up and down, the liquid-treatment unit of the 2nd block B2 moves horizontally, realized relatively moving between the liquid-treatment unit of the thermal treatment unit of the 1st and the 3rd block B1, B3 and the 2nd block B2 thus, but, also can move and realize relatively moving by other.For example, also can be designed to, the thermal treatment unit of the 1st and the 3rd block B1, B3 moves horizontally.In addition, also can be designed to, for example the unit of regulation block with respect to mobile destination in an inclined direction straight line move.
In the above-described embodiment, the processing procedure of 1 wafer W is illustrated, but in base plate processing system 1, but carry out the processing of many wafers the same period continuously.At this moment, in elementary layer H1～H3 of the 2nd block B2, even carrying out the processing of wafer W in a liquid-treatment unit, housing 130 also can move and with respect to other liquid-treatment unit input and output wafer W.In addition, in the 1st block B1 and the 2nd block B2, when carrying out the processing of wafer W in the thermal treatment unit in two one group thermal treatment unit, one group of thermal treatment unit integral body also can move, thereby carries out the conveying of wafer W with respect to another thermal treatment unit.
The transport path of wafer W is not limited to the situation of above-mentioned execution mode.The transport path of wafer W can be selected arbitrarily according to the processing method of wafer W.The wafer W that also can be undertaken by the wafer transport body 11 at year box station 2 between the unit in the 1st block B1 is carried.For example can be designed to: by wafer transport body 11 untreated wafer W is transported to heating/cooling unit of the 1st block B1, after this, by wafer transport body 11 will heat/wafer W of cooling unit is transported to adhesion/cooling unit.In addition, the wafer W that also can be undertaken by the wafer transport body 170 of interface portion 4 between unit in the 3rd block B3 is carried.
And, can adopt transport path shown in Figure 22.That is, on the wafer W in being transported to resist coating element 120 for example, coating resist liquid.After this, as shown in figure 22, wafer W is transported to the heating/cooling unit 144 on for example upper strata of the 1st unit group I1 that is arranged in the 3rd block B3 from resist coating element 120.In addition, also wafer W can be transported to heating/cooling unit that other can conduct interviews with respect to resist coating element 120, for example heating/cooling unit 153～155 of the heating/cooling unit 143,145 of the 1st unit group I1 or the 2nd unit group I2 etc.In addition, also can be designed to, wafer W is transported to heating/cooling unit of carrying the 3rd constantly empty block B3 at it.
By the conveying device 80 of heating/cooling unit 144, carry out carrying to the wafer W of heating/cooling unit 144 from resist coating element 120.In addition, under the situation about staggering in the position of for example heating/cooling unit 144 of carrying the destination and resist coating element 120, heating/cooling unit 144 and resist coating element 120 relatively move, heating/cooling unit 144 and resist coating element 120 are approaching mutually, by conveying device 80 transfer wafers W.
For example, be transported to the wafer W of heating/cooling unit 144, be transported to heating plate 52, carry out prebake from coldplate 60.Wafer W after prebake finishes turns back to coldplate 60, and after this, the wafer transport body 170 by interface portion 4 is transported to for example peripheral exposing unit 171.The peripheral part of wafer W is exposed in peripheral exposing unit 171.After this, wafer W is transported to handing-over box 173 by wafer transport body 170, is transported to the exposure device (not shown) approaching with interface portion 4 again, exposes.
Wafer W after exposure-processed finishes turns back to handing-over box 173, is transported to for example heating/cooling unit 140 of the 1st block group I1 lower layer side that is positioned at the 3rd block B3 by wafer transport body 170.In addition, wafer W also can be transported to and wafer W can be transported in carry out next processing the development treatment unit, other heating/cooling units 141,150,151 the 3rd block B3 etc.In addition, also can be designed to, wafer W is transported at it carry in heating/cooling unit of the 3rd constantly empty block B3.
And then, also can be designed to, the 1st block B1 for the treatment of stations 3 and the thermal treatment unit of the 3rd block B3 can move up at upper and lower, and the liquid-treatment unit of the 2nd block B2 can move in the horizontal direction.In addition, also can be designed to, in the thermal treatment unit of the 1st block B1 and the 3rd block B3, conveying device 80 is set, make the 1st block B1 and the 2nd block B2 unit each other and the unit of the 2nd block B2 and the 3rd block B3 move relative to each other, and can be at transfer wafers W between the 1st block B1 and the 2nd block B2 and between the 2nd block B2 and the 3rd block B3.Thus, between the unit that can make up, carry out the conveying of wafer W in many kinds of the 1st block B1 and the 2nd block B2.In addition, carry out the conveying of wafer W between the unit that can make up in many kinds of the 2nd block B2 and the 3rd block B3.As a result, in treating stations 3, form many transport paths of wafer W, thereby can tackle the multiple processing method of wafer W neatly.In addition, owing to needn't use such in the past central conveying device, just can between the unit, carry flexibly and successfully,, realize the quality homogenizing of processing of wafers and the raising of production capacity so it is poor to reduce the conveying stand-by period of processing time difference between wafer W and wafer W.And then, need not to be used for being provided with the large space of central conveying device, correspondingly can make base plate processing system 1 miniaturization.
In addition, because the unit of the 1st and the 3rd block B1, B3 moves up and down, the unit horizontal that is clipped in the 2nd block B2 therebetween moves, so in a plurality of unit that upper and lower moves up and a plurality of unit alternately configuration on transport path of moving in the horizontal direction.Thus, in treating stations 3, it is less to move required space, a plurality of unit, correspondingly can make treating stations 3 densifications.
According to above-mentioned example, wafer W is transported to the liquid-treatment unit of the 2nd block B2, after this again from carrying the thermal treatment unit that box station 2 is transported to the 1st block B1 from the thermal treatment unit of the 1st block B1, be transported to the thermal treatment unit of the 3rd block B3, be transported to interface portion 4 again.In addition, after exposure-processed finishes, be transported to the thermal treatment unit of the 3rd block B3 from interface portion 4, be transported to the liquid-treatment unit of the 2nd block B2 from the thermal treatment unit of the 3rd block B3, after this be transported to the thermal treatment unit of the 1st block B1, turn back to again and carry box station 2.Like this, wafer W is carried by straight line, so can reduce total displacement of wafer W, realizes the raising of production capacity.
And then, also can be designed to, the wafer W after exposure-processed finishes turns back to handing-over box 173, is transported to by wafer transport body 170 in for example heating/cooling unit 140 of the 3rd block B3.In heating/cooling unit 140, wafer W is carried out the post-exposure oven dry.Wafer W after the post-exposure oven dry finishes is transported to for example development treatment unit 100 of the 2nd block B2 by conveying device 80, and is developed.Wafer W after development treatment finishes is transported to for example heating/cooling unit 20 of the 1st block B1.Be transported to the wafer W of heating/cooling unit 20, be transported to heating plate 52, implement the back oven dry from coldplate 60.Wafer W after the back oven dry finishes turns back to coldplate 60, turns back to box C by means of the wafer transport body 11 that carries box station 2.So a series of photo-mask process finishes.
According to this example, make the wafer W that is transported to the 1st block B1 from year box station 2 reciprocal between the 1st block B1 and the 2nd block B2, after this be transported to the 3rd block B3, be transported to interface portion 4 again.Like this, reciprocal between the 1st block B1 and the 2nd block B2 by making wafer W as required, conveying can not only be maintained on the short straight line of wafer W fed distance, also can carry out the many processing of wafers of process number.In addition, the reciprocal time of wafer W can be selected arbitrarily according to the processing method of wafer W.
Both can make wafer W reciprocal between the 1st block B1 and the 2nd block B2, and also can make wafer W reciprocal between the 2nd block B2 and the 3rd block B3 as required.For example, in the above-described embodiment, the wafer W of the resist that will be through with in resist coating element 120 coating is transported in the top coating unit 110 via the thermal treatment unit of the 1st block B1, still, also can be transported to top coating unit 110 via the thermal treatment unit of the 3rd block B3.
In addition, also can make wafer W between the 1st block B1 and the 2nd block B2 and between the 2nd block B2 and the 3rd block B3 back and forth.For example, form under the situation of antireflection film on the lower floor and the upper strata of resist film, wafer W is transported to the bottom coating element 121 of the 2nd block B2 from carrying heating/cooling unit that box station 2 is transported to the 1st block B1 from this heating/cooling unit.In this bottom coating element 121, apply the wafer W of antireflection film, be transported to for example heating/cooling unit of the 1st block B1, after this be transported to for example resist coating element 120 of the 2nd block B2.Then, in resist coating element 120, apply the wafer W of resist, be transported to for example top coating unit 110 of the 2nd block B2 via heating/cooling unit of the 3rd block B3.After this, wafer W and above-mentioned execution mode similarly are transported to for example heating/cooling unit 142 of the 3rd block B3.
When wafer W is transported to interface portion 4 from carrying box station 2, can make wafer W reciprocal, wafer W is being transported to when carrying box station 2 from interface portion 4, also can make as required wafer W between the 3rd block B3 and the 2nd block B2 and between the 2nd block B2 and the 1st block B1 back and forth.
In the above-described embodiment, a plurality of configuration of cells are in each block for the treatment of stations 3, and still, the configuration of a plurality of unit of the present invention is not limited to above-mentioned situation.In the above-described embodiment; the present invention is applied to carry out the base plate processing system 1 of photo-mask process; handle but also can be applied to other, as the base plate processing system that carries out following processing: carry out the clean of wafer W clean, handle in the film forming of film forming on the wafer W, inspection processing that the etch processes of etched wafer W,, particulate thick to the thickness on the wafer W, line or defective etc. are checked etc.That is, the unit further among the present invention is cleaning unit, one-tenth film unit, etching unit, inspection unit etc.The present invention also can be used for the treatment system of other substrates such as mask of FPD (flat-panel monitor), photomask beyond the wafer W.
The present invention is in base plate processing system, and it is useful saving for the multiple processing method of flexible reply, the conveying stand-by period of reducing processing time difference between substrate and substrate and then implementation space.
Claims (13)
1. a base plate processing system that carries out the processing of substrate is characterized in that,
Have a plurality of Unit the 1st that can take in substrate and and approaching above-mentioned Unit the 1st between carry out the conveying of substrate Unit the 2nd,
Above-mentioned Unit the 1st and above-mentioned Unit the 2nd overlook when observing being set up in parallel,
The processing unit that in a plurality of above-mentioned Unit the 1st some at least, comprises the processing of carrying out substrate,
A plurality of above-mentioned Unit the 1st are arranged side by side along the vertical direction,
Above-mentioned Unit the 1st can move up at upper and lower, so that at least 2 the 1st neighbouring unit in above-mentioned a plurality of Unit the 1st can be with respect to above-mentioned Unit the 2nd handing-over substrate.
2. a base plate processing system that carries out the processing of substrate is characterized in that,
Have a plurality of Unit the 1st that can take in substrate and and approaching above-mentioned Unit the 1st between carry out the conveying of substrate Unit the 2nd,
Above-mentioned Unit the 1st and above-mentioned Unit the 2nd overlook when observing being set up in parallel,
The processing unit that in a plurality of above-mentioned Unit the 1st some at least, comprises the processing of carrying out substrate,
A plurality of above-mentioned the 1st unit along continuous straight runs are arranged side by side,
Above-mentioned Unit the 1st can move in the horizontal direction, so that at least 2 the 1st adjacent unit of the along continuous straight runs in a plurality of above-mentioned Unit the 1st can be with respect to above-mentioned Unit the 2nd handing-over substrate.
3. base plate processing system as claimed in claim 2 is characterized in that, at least 2 the 1st unit that the along continuous straight runs in above-mentioned a plurality of Unit the 1st is adjacent can move integratedly in the horizontal direction.
4. base plate processing system as claimed in claim 3 is characterized in that, at individual the 1st unit integral of N (N is the natural number more than 2) situation under, Unit the 1st that this is integrated can move the space that is equivalent to N-1 unit in the horizontal direction.
5. base plate processing system as claimed in claim 2 is characterized in that, above-mentioned a plurality of Unit the 1st can move independently of each other in the horizontal direction.
6. base plate processing system as claimed in claim 2 is characterized in that, above-mentioned Unit the 1st can move the space that is equivalent at least one unit in the horizontal direction.
7. base plate processing system as claimed in claim 2 is characterized in that, above-mentioned Unit the 1st can move with interior in the space that is equivalent to a unit by along continuous straight runs.
8. base plate processing system as claimed in claim 2, it is characterized in that, above-mentioned Unit the 1st can move in the horizontal direction, so that the substrate delivery port of other adjacent with following one the 1st unit at least Unit the 1st can move on the position of substrate delivery port of described one the 1st unit, wherein said one the 1st unit be in can and above-mentioned Unit the 2nd between the state of conveying substrate.
9. base plate processing system as claimed in claim 2 is characterized in that, above-mentioned Unit the 2nd is equipped with a plurality of, and along continuous straight runs is arranged side by side,
Above-mentioned Unit the 1st can move in the horizontal direction, so that each Unit the 1st can join substrate between at least 2 Unit the 2nd adjacent with along continuous straight runs.
10. base plate processing system as claimed in claim 2 is characterized in that, comprises the liquid-treatment unit of the liquid handling of carrying out substrate in above-mentioned Unit the 1st,
In above-mentioned Unit the 2nd, comprise the heat treated thermal treatment unit that carries out substrate.
11. a base plate processing system that carries out the processing of substrate is characterized in that,
Have Unit the 1st and the Unit the 2nd that can take in substrate,
At least a certain person of above-mentioned Unit the 1st and Unit the 2nd is equipped with a plurality of,
In a certain at least person of above-mentioned Unit the 1st and Unit the 2nd, comprise the processing unit of the processing of carrying out substrate,
At least a certain person of above-mentioned Unit the 1st and Unit the 2nd possesses and carry out the conveying device that substrate is carried between above-mentioned Unit the 1st and above-mentioned Unit the 2nd,
At least a certain person of above-mentioned Unit the 1st and Unit the 2nd moves, and can carry out the conveying of substrate by above-mentioned conveying device.
12. base plate processing system as claimed in claim 11 is characterized in that, has to take in a plurality of of substrate or one the 3rd unit,
Above-mentioned Unit the 3rd and above-mentioned Unit the 2nd between carry out the conveying of substrate,
Possess under the situation of above-mentioned conveying device in above-mentioned Unit the 2nd, a certain at least person of above-mentioned Unit the 2nd and above-mentioned Unit the 3rd moves, and can carry out the conveying of substrate by above-mentioned conveying device between above-mentioned Unit the 2nd and above-mentioned Unit the 3rd,
Do not possess under the situation of above-mentioned conveying device in above-mentioned Unit the 2nd, Unit the 3rd possesses other conveying devices of carrying out the conveying of substrate between above-mentioned Unit the 2nd and above-mentioned Unit the 3rd, at least a certain person of above-mentioned Unit the 2nd and above-mentioned Unit the 3rd moves, and can carry out the conveying of substrate by above-mentioned other conveying devices between above-mentioned Unit the 2nd and above-mentioned Unit the 3rd.
13. a base plate processing system that carries out the processing of substrate is characterized in that,
Have treating stations, can take in a plurality of Unit the 1st of substrate, a plurality of Unit the 2nd and a plurality of Unit the 3rd according to this sequence arrangement be equipped in the described treating stations,
In a certain at least person of each Unit the 1st, Unit the 2nd and Unit the 3rd, comprise the processing unit of the processing of carrying out substrate,
Above-mentioned each Unit the 1st can move up and down,
Above-mentioned each Unit the 2nd can move horizontally,
Above-mentioned each Unit the 3rd can move up and down,
At least a certain person of above-mentioned Unit the 1st, Unit the 2nd and Unit the 3rd moves, and can join substrate between a certain at least Unit the 1st and a certain at least Unit the 2nd and between a certain at least Unit the 2nd and a certain at least Unit the 3rd.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005157924 | 2005-05-30 | ||
| JP2005157924A JP4515331B2 (en) | 2005-05-30 | 2005-05-30 | Substrate processing system |
| JP2005159069 | 2005-05-31 | ||
| JP2005162951 | 2005-06-02 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1873942A true CN1873942A (en) | 2006-12-06 |
| CN100399533C CN100399533C (en) | 2008-07-02 |
Family
ID=37484328
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006100878986A Expired - Fee Related CN100399533C (en) | 2005-05-30 | 2006-05-29 | Substrate processing system |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP4515331B2 (en) |
| CN (1) | CN100399533C (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102171116A (en) * | 2008-08-22 | 2011-08-31 | Otb太阳能有限公司 | Conveyor assembly and method for conveying a substrate carrier |
| CN102222605A (en) * | 2011-06-08 | 2011-10-19 | 致茂电子(苏州)有限公司 | Wafer conveying device with fragment detection |
| CN104303110A (en) * | 2012-05-23 | 2015-01-21 | 株式会社尼康 | Cutting mechanism, joining mechanism, substrate processing system, substrate processing device, and substrate processing method |
| CN107017184A (en) * | 2015-11-12 | 2017-08-04 | 株式会社斯库林集团 | Substrate board treatment |
| CN107267962A (en) * | 2012-01-31 | 2017-10-20 | 应用材料公司 | Base plate processing system and method for handling multiple substrates |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014033042A (en) * | 2012-08-02 | 2014-02-20 | Tokyo Electron Ltd | Thermal treatment device, thermal treatment method, program, and computer storage medium |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6119131A (en) * | 1984-07-06 | 1986-01-28 | Toshiba Corp | Resist processor |
| US4722298A (en) * | 1986-05-19 | 1988-02-02 | Machine Technology, Inc. | Modular processing apparatus for processing semiconductor wafers |
| JP3310212B2 (en) * | 1998-02-06 | 2002-08-05 | 東京エレクトロン株式会社 | Coating / development processing system and liquid processing system |
| JP2000124301A (en) * | 1998-10-13 | 2000-04-28 | Tokyo Electron Ltd | Container mounting unit, container housing apparatus and treating apparatus |
| JP3495292B2 (en) * | 1999-06-09 | 2004-02-09 | 東京エレクトロン株式会社 | Substrate processing equipment |
| JP4506916B2 (en) * | 2000-06-30 | 2010-07-21 | 東京エレクトロン株式会社 | Liquid processing apparatus and liquid processing method |
| JP4342147B2 (en) * | 2002-05-01 | 2009-10-14 | 大日本スクリーン製造株式会社 | Substrate processing equipment |
-
2005
- 2005-05-30 JP JP2005157924A patent/JP4515331B2/en not_active Expired - Fee Related
-
2006
- 2006-05-29 CN CNB2006100878986A patent/CN100399533C/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102171116A (en) * | 2008-08-22 | 2011-08-31 | Otb太阳能有限公司 | Conveyor assembly and method for conveying a substrate carrier |
| CN102171116B (en) * | 2008-08-22 | 2014-03-26 | 罗特·劳有限公司 | Conveyor assembly and method for conveying a substrate carrier |
| CN102222605A (en) * | 2011-06-08 | 2011-10-19 | 致茂电子(苏州)有限公司 | Wafer conveying device with fragment detection |
| CN102222605B (en) * | 2011-06-08 | 2013-05-15 | 致茂电子(苏州)有限公司 | Wafer conveying device with fragment detection |
| CN107267962A (en) * | 2012-01-31 | 2017-10-20 | 应用材料公司 | Base plate processing system and method for handling multiple substrates |
| CN104303110A (en) * | 2012-05-23 | 2015-01-21 | 株式会社尼康 | Cutting mechanism, joining mechanism, substrate processing system, substrate processing device, and substrate processing method |
| CN104303110B (en) * | 2012-05-23 | 2016-11-16 | 株式会社尼康 | Shut-off mechanism, engaging mechanism, base plate processing system, substrate board treatment and substrate processing method using same |
| CN107017184A (en) * | 2015-11-12 | 2017-08-04 | 株式会社斯库林集团 | Substrate board treatment |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2006332558A (en) | 2006-12-07 |
| CN100399533C (en) | 2008-07-02 |
| JP4515331B2 (en) | 2010-07-28 |
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