CN1864229B - 磁隧道结器件以及用于所述器件的写/读方法 - Google Patents

磁隧道结器件以及用于所述器件的写/读方法 Download PDF

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Publication number
CN1864229B
CN1864229B CN2004800293670A CN200480029367A CN1864229B CN 1864229 B CN1864229 B CN 1864229B CN 2004800293670 A CN2004800293670 A CN 2004800293670A CN 200480029367 A CN200480029367 A CN 200480029367A CN 1864229 B CN1864229 B CN 1864229B
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China
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layer
magnetic device
magnetic
thermal boundary
magnetosphere
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Expired - Fee Related
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CN2004800293670A
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Chinese (zh)
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CN1864229A (zh
Inventor
伯纳德·迪尼
里卡多·索萨
达纳·斯塔尼斯库
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Centre National de la Recherche Scientifique CNRS
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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NATIONAL CENTER FOR SCIENTIFIC RESEARCH
Commissariat a lEnergie Atomique CEA
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
CN2004800293670A 2003-10-10 2004-10-06 磁隧道结器件以及用于所述器件的写/读方法 Expired - Fee Related CN1864229B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR0311897A FR2860910B1 (fr) 2003-10-10 2003-10-10 Dispositif a jonction tunnel magnetique et procede d'ecriture/lecture d'un tel dispositif
FR0311897 2003-10-10
PCT/FR2004/002517 WO2005036559A1 (fr) 2003-10-10 2004-10-06 Dispositif à jonction tunnel magnétique et procédé d'écriture/lecture d'un tel dispositif

Publications (2)

Publication Number Publication Date
CN1864229A CN1864229A (zh) 2006-11-15
CN1864229B true CN1864229B (zh) 2012-01-25

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CN2004800293670A Expired - Fee Related CN1864229B (zh) 2003-10-10 2004-10-06 磁隧道结器件以及用于所述器件的写/读方法

Country Status (8)

Country Link
US (1) US7480175B2 (enExample)
EP (1) EP1671330B1 (enExample)
JP (1) JP5035829B2 (enExample)
KR (1) KR101169241B1 (enExample)
CN (1) CN1864229B (enExample)
CA (1) CA2540608C (enExample)
FR (1) FR2860910B1 (enExample)
WO (1) WO2005036559A1 (enExample)

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TWI449040B (zh) 2006-10-06 2014-08-11 Crocus Technology Sa 用於提供內容可定址的磁阻式隨機存取記憶體單元之系統及方法
KR20080057881A (ko) 2006-12-21 2008-06-25 엘지전자 주식회사 인쇄회로기판, 이를 포함하는 발광 장치 및 그 제조 방법
US7679163B2 (en) * 2007-05-14 2010-03-16 Industrial Technology Research Institute Phase-change memory element
JP5152712B2 (ja) * 2007-07-17 2013-02-27 独立行政法人理化学研究所 磁化状態制御装置および磁気情報記録装置
CN101354908B (zh) * 2007-07-23 2011-01-19 财团法人工业技术研究院 栓扣式磁性存储器的数据写入控制电路及数据写入方法
KR100943860B1 (ko) * 2007-12-21 2010-02-24 주식회사 하이닉스반도체 자기터널접합 셀 형성방법
US8426838B2 (en) 2008-01-25 2013-04-23 Higgs Opl. Capital Llc Phase-change memory
EP2109111B1 (en) 2008-04-07 2011-12-21 Crocus Technology S.A. System and method for writing data to magnetoresistive random access memory cells
FR2931011B1 (fr) 2008-05-06 2010-05-28 Commissariat Energie Atomique Element magnetique a ecriture assistee thermiquement
EP2124228B1 (en) 2008-05-20 2014-03-05 Crocus Technology Magnetic random access memory with an elliptical junction
US8031519B2 (en) 2008-06-18 2011-10-04 Crocus Technology S.A. Shared line magnetic random access memory cells
US8089132B2 (en) * 2008-10-09 2012-01-03 Seagate Technology Llc Magnetic memory with phonon glass electron crystal material
US8604457B2 (en) 2008-11-12 2013-12-10 Higgs Opl. Capital Llc Phase-change memory element
US8102703B2 (en) * 2009-07-14 2012-01-24 Crocus Technology Magnetic element with a fast spin transfer torque writing procedure
EP2325846B1 (en) * 2009-11-12 2015-10-28 Crocus Technology S.A. A magnetic tunnel junction memory with thermally assisted writing
EP2405439B1 (en) * 2010-07-07 2013-01-23 Crocus Technology S.A. Magnetic device with optimized heat confinement
JP2012066476A (ja) * 2010-09-24 2012-04-05 Toshiba Hokuto Electronics Corp サーマルヘッド
JP2012084765A (ja) * 2010-10-14 2012-04-26 Sony Corp 不揮発性メモリ素子及びその製造方法
EP2447948B1 (en) * 2010-10-26 2014-12-31 Crocus Technology S.A. Thermally assisted magnetic random access memory element with improved endurance
US11004489B2 (en) * 2019-06-19 2021-05-11 Western Digital Technologies, Inc. Perpendicular spin transfer torque MRAM memory cell with in-stack thermal barriers

Citations (2)

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CN1365117A (zh) * 2001-01-11 2002-08-21 惠普公司 磁随机存取存储装置的热辅助切换
CN1402254A (zh) * 2001-08-02 2003-03-12 三菱电机株式会社 具有含磁隧道结的存储器单元的薄膜磁存储装置

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JP3148703B2 (ja) * 1997-12-05 2001-03-26 株式会社日立製作所 磁気抵抗効果型ヘッドおよび磁気記録再生装置
US6072718A (en) * 1998-02-10 2000-06-06 International Business Machines Corporation Magnetic memory devices having multiple magnetic tunnel junctions therein
US6535416B1 (en) * 1999-06-18 2003-03-18 Nve Corporation Magnetic memory coincident thermal pulse data storage
US6519179B2 (en) * 1999-12-10 2003-02-11 Sharp Kabushiki Kaisha Magnetic tunnel junction device, magnetic memory adopting the same, magnetic memory cell and access method of the same
US6385082B1 (en) * 2000-11-08 2002-05-07 International Business Machines Corp. Thermally-assisted magnetic random access memory (MRAM)
JP4666774B2 (ja) * 2001-01-11 2011-04-06 キヤノン株式会社 磁気薄膜メモリ素子、磁気薄膜メモリおよび情報記録再生方法
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FR2832542B1 (fr) 2001-11-16 2005-05-06 Commissariat Energie Atomique Dispositif magnetique a jonction tunnel magnetique, memoire et procedes d'ecriture et de lecture utilisant ce dispositif
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CN1365117A (zh) * 2001-01-11 2002-08-21 惠普公司 磁随机存取存储装置的热辅助切换
CN1402254A (zh) * 2001-08-02 2003-03-12 三菱电机株式会社 具有含磁隧道结的存储器单元的薄膜磁存储装置

Also Published As

Publication number Publication date
EP1671330B1 (fr) 2015-03-18
CN1864229A (zh) 2006-11-15
FR2860910A1 (fr) 2005-04-15
JP5035829B2 (ja) 2012-09-26
CA2540608A1 (en) 2005-04-21
KR101169241B1 (ko) 2012-08-06
FR2860910B1 (fr) 2006-02-10
US7480175B2 (en) 2009-01-20
US20070263434A1 (en) 2007-11-15
WO2005036559A1 (fr) 2005-04-21
EP1671330A1 (fr) 2006-06-21
KR20060131740A (ko) 2006-12-20
CA2540608C (en) 2013-12-17
JP2007509489A (ja) 2007-04-12

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