FR2860910B1 - Dispositif a jonction tunnel magnetique et procede d'ecriture/lecture d'un tel dispositif - Google Patents

Dispositif a jonction tunnel magnetique et procede d'ecriture/lecture d'un tel dispositif

Info

Publication number
FR2860910B1
FR2860910B1 FR0311897A FR0311897A FR2860910B1 FR 2860910 B1 FR2860910 B1 FR 2860910B1 FR 0311897 A FR0311897 A FR 0311897A FR 0311897 A FR0311897 A FR 0311897A FR 2860910 B1 FR2860910 B1 FR 2860910B1
Authority
FR
France
Prior art keywords
writing
reading
tunnel junction
magnetic tunnel
junction device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0311897A
Other languages
English (en)
French (fr)
Other versions
FR2860910A1 (fr
Inventor
Bernard Dieny
Ricardo Sousa
Dana Stanescu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR0311897A priority Critical patent/FR2860910B1/fr
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to PCT/FR2004/002517 priority patent/WO2005036559A1/fr
Priority to CA2540608A priority patent/CA2540608C/en
Priority to KR1020067006941A priority patent/KR101169241B1/ko
Priority to EP04791472.6A priority patent/EP1671330B1/fr
Priority to JP2006530418A priority patent/JP5035829B2/ja
Priority to CN2004800293670A priority patent/CN1864229B/zh
Publication of FR2860910A1 publication Critical patent/FR2860910A1/fr
Application granted granted Critical
Publication of FR2860910B1 publication Critical patent/FR2860910B1/fr
Priority to US11/780,402 priority patent/US7480175B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
FR0311897A 2003-10-10 2003-10-10 Dispositif a jonction tunnel magnetique et procede d'ecriture/lecture d'un tel dispositif Expired - Fee Related FR2860910B1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR0311897A FR2860910B1 (fr) 2003-10-10 2003-10-10 Dispositif a jonction tunnel magnetique et procede d'ecriture/lecture d'un tel dispositif
CA2540608A CA2540608C (en) 2003-10-10 2004-10-06 Magnetic tunnel junction device and writing/reading method for said device
KR1020067006941A KR101169241B1 (ko) 2003-10-10 2004-10-06 자기 터널 접합 장치 및 자기 터널 접합 장치용 기록/판독방법
EP04791472.6A EP1671330B1 (fr) 2003-10-10 2004-10-06 Dispositif a jonction tunnel magnetique et procede d'ecriture/lecture d'un tel dispositif
PCT/FR2004/002517 WO2005036559A1 (fr) 2003-10-10 2004-10-06 Dispositif à jonction tunnel magnétique et procédé d'écriture/lecture d'un tel dispositif
JP2006530418A JP5035829B2 (ja) 2003-10-10 2004-10-06 磁気装置
CN2004800293670A CN1864229B (zh) 2003-10-10 2004-10-06 磁隧道结器件以及用于所述器件的写/读方法
US11/780,402 US7480175B2 (en) 2003-10-10 2007-07-19 Magnetic tunnel junction device and writing/reading for said device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0311897A FR2860910B1 (fr) 2003-10-10 2003-10-10 Dispositif a jonction tunnel magnetique et procede d'ecriture/lecture d'un tel dispositif

Publications (2)

Publication Number Publication Date
FR2860910A1 FR2860910A1 (fr) 2005-04-15
FR2860910B1 true FR2860910B1 (fr) 2006-02-10

Family

ID=34355400

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0311897A Expired - Fee Related FR2860910B1 (fr) 2003-10-10 2003-10-10 Dispositif a jonction tunnel magnetique et procede d'ecriture/lecture d'un tel dispositif

Country Status (8)

Country Link
US (1) US7480175B2 (enExample)
EP (1) EP1671330B1 (enExample)
JP (1) JP5035829B2 (enExample)
KR (1) KR101169241B1 (enExample)
CN (1) CN1864229B (enExample)
CA (1) CA2540608C (enExample)
FR (1) FR2860910B1 (enExample)
WO (1) WO2005036559A1 (enExample)

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US7986454B1 (en) * 2006-07-03 2011-07-26 Terahertz Technologies Llc Tunable terahertz generator using a magnon gain medium with an antenna
TWI449040B (zh) 2006-10-06 2014-08-11 Crocus Technology Sa 用於提供內容可定址的磁阻式隨機存取記憶體單元之系統及方法
KR20080057881A (ko) 2006-12-21 2008-06-25 엘지전자 주식회사 인쇄회로기판, 이를 포함하는 발광 장치 및 그 제조 방법
US7679163B2 (en) * 2007-05-14 2010-03-16 Industrial Technology Research Institute Phase-change memory element
JP5152712B2 (ja) * 2007-07-17 2013-02-27 独立行政法人理化学研究所 磁化状態制御装置および磁気情報記録装置
CN101354908B (zh) * 2007-07-23 2011-01-19 财团法人工业技术研究院 栓扣式磁性存储器的数据写入控制电路及数据写入方法
KR100943860B1 (ko) * 2007-12-21 2010-02-24 주식회사 하이닉스반도체 자기터널접합 셀 형성방법
US8426838B2 (en) 2008-01-25 2013-04-23 Higgs Opl. Capital Llc Phase-change memory
EP2109111B1 (en) 2008-04-07 2011-12-21 Crocus Technology S.A. System and method for writing data to magnetoresistive random access memory cells
FR2931011B1 (fr) * 2008-05-06 2010-05-28 Commissariat Energie Atomique Element magnetique a ecriture assistee thermiquement
EP2124228B1 (en) 2008-05-20 2014-03-05 Crocus Technology Magnetic random access memory with an elliptical junction
US8031519B2 (en) 2008-06-18 2011-10-04 Crocus Technology S.A. Shared line magnetic random access memory cells
US8089132B2 (en) * 2008-10-09 2012-01-03 Seagate Technology Llc Magnetic memory with phonon glass electron crystal material
US8604457B2 (en) 2008-11-12 2013-12-10 Higgs Opl. Capital Llc Phase-change memory element
US8102703B2 (en) * 2009-07-14 2012-01-24 Crocus Technology Magnetic element with a fast spin transfer torque writing procedure
EP2325846B1 (en) 2009-11-12 2015-10-28 Crocus Technology S.A. A magnetic tunnel junction memory with thermally assisted writing
EP2405439B1 (en) * 2010-07-07 2013-01-23 Crocus Technology S.A. Magnetic device with optimized heat confinement
JP2012066476A (ja) * 2010-09-24 2012-04-05 Toshiba Hokuto Electronics Corp サーマルヘッド
JP2012084765A (ja) * 2010-10-14 2012-04-26 Sony Corp 不揮発性メモリ素子及びその製造方法
EP2447948B1 (en) * 2010-10-26 2014-12-31 Crocus Technology S.A. Thermally assisted magnetic random access memory element with improved endurance
US11004489B2 (en) * 2019-06-19 2021-05-11 Western Digital Technologies, Inc. Perpendicular spin transfer torque MRAM memory cell with in-stack thermal barriers

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US5933365A (en) * 1997-06-19 1999-08-03 Energy Conversion Devices, Inc. Memory element with energy control mechanism
JP3148703B2 (ja) * 1997-12-05 2001-03-26 株式会社日立製作所 磁気抵抗効果型ヘッドおよび磁気記録再生装置
US6072718A (en) 1998-02-10 2000-06-06 International Business Machines Corporation Magnetic memory devices having multiple magnetic tunnel junctions therein
EP1196925B1 (en) * 1999-06-18 2015-10-28 NVE Corporation Magnetic memory coincident thermal pulse data storage
US6519179B2 (en) 1999-12-10 2003-02-11 Sharp Kabushiki Kaisha Magnetic tunnel junction device, magnetic memory adopting the same, magnetic memory cell and access method of the same
US6385082B1 (en) * 2000-11-08 2002-05-07 International Business Machines Corp. Thermally-assisted magnetic random access memory (MRAM)
US6603678B2 (en) 2001-01-11 2003-08-05 Hewlett-Packard Development Company, L.P. Thermally-assisted switching of magnetic memory elements
JP4666774B2 (ja) * 2001-01-11 2011-04-06 キヤノン株式会社 磁気薄膜メモリ素子、磁気薄膜メモリおよび情報記録再生方法
US6744086B2 (en) * 2001-05-15 2004-06-01 Nve Corporation Current switched magnetoresistive memory cell
JP4780878B2 (ja) * 2001-08-02 2011-09-28 ルネサスエレクトロニクス株式会社 薄膜磁性体記憶装置
JP4798895B2 (ja) * 2001-08-21 2011-10-19 キヤノン株式会社 強磁性体メモリとその熱補助駆動方法
FR2829867B1 (fr) 2001-09-20 2003-12-19 Centre Nat Rech Scient Memoire magnetique a selection a l'ecriture par inhibition et procede pour son ecriture
FR2832542B1 (fr) 2001-11-16 2005-05-06 Commissariat Energie Atomique Dispositif magnetique a jonction tunnel magnetique, memoire et procedes d'ecriture et de lecture utilisant ce dispositif
JP3871572B2 (ja) * 2002-01-16 2007-01-24 株式会社東芝 磁気記憶装置
SG115462A1 (en) * 2002-03-12 2005-10-28 Inst Data Storage Multi-stage per cell magnetoresistive random access memory
JP2003282837A (ja) * 2002-03-27 2003-10-03 Sony Corp 磁気メモリ装置およびその製造方法
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US6667897B1 (en) * 2002-06-28 2003-12-23 International Business Machines Corporation Magnetic tunnel junction containing a ferrimagnetic layer and anti-parallel layer
US6980468B1 (en) * 2002-10-28 2005-12-27 Silicon Magnetic Systems High density MRAM using thermal writing
US6771534B2 (en) * 2002-11-15 2004-08-03 International Business Machines Corporation Thermally-assisted magnetic writing using an oxide layer and current-induced heating
US6909633B2 (en) * 2002-12-09 2005-06-21 Applied Spintronics Technology, Inc. MRAM architecture with a flux closed data storage layer
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US7522446B2 (en) * 2003-10-31 2009-04-21 Samsung Electronics Co., Ltd. Heating MRAM cells to ease state switching

Also Published As

Publication number Publication date
JP5035829B2 (ja) 2012-09-26
KR20060131740A (ko) 2006-12-20
CA2540608A1 (en) 2005-04-21
US7480175B2 (en) 2009-01-20
JP2007509489A (ja) 2007-04-12
CA2540608C (en) 2013-12-17
EP1671330A1 (fr) 2006-06-21
CN1864229B (zh) 2012-01-25
CN1864229A (zh) 2006-11-15
EP1671330B1 (fr) 2015-03-18
KR101169241B1 (ko) 2012-08-06
US20070263434A1 (en) 2007-11-15
WO2005036559A1 (fr) 2005-04-21
FR2860910A1 (fr) 2005-04-15

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Legal Events

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TQ Partial transmission of property
CL Concession to grant licences
PLFP Fee payment

Year of fee payment: 13

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Year of fee payment: 14

ST Notification of lapse

Effective date: 20180629