CN1825556B - 晶片支架 - Google Patents

晶片支架 Download PDF

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Publication number
CN1825556B
CN1825556B CN2006100514176A CN200610051417A CN1825556B CN 1825556 B CN1825556 B CN 1825556B CN 2006100514176 A CN2006100514176 A CN 2006100514176A CN 200610051417 A CN200610051417 A CN 200610051417A CN 1825556 B CN1825556 B CN 1825556B
Authority
CN
China
Prior art keywords
wafer
outer shroud
outer ring
wafer stage
lateral part
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CN2006100514176A
Other languages
English (en)
Chinese (zh)
Other versions
CN1825556A (zh
Inventor
苏尼尔·威克拉玛纳雅卡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
Original Assignee
Canon Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Anelva Corp filed Critical Canon Anelva Corp
Publication of CN1825556A publication Critical patent/CN1825556A/zh
Application granted granted Critical
Publication of CN1825556B publication Critical patent/CN1825556B/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/225—Oblique incidence of vaporised material on substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C23C14/505—Substrate holders for rotation of the substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3417—Arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
CN2006100514176A 2005-02-25 2006-02-24 晶片支架 Expired - Lifetime CN1825556B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005-050064 2005-02-25
JP2005050064A JP4336320B2 (ja) 2005-02-25 2005-02-25 ウエハホルダ
JP2005050064 2005-02-25

Publications (2)

Publication Number Publication Date
CN1825556A CN1825556A (zh) 2006-08-30
CN1825556B true CN1825556B (zh) 2010-10-13

Family

ID=36190762

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2006100514176A Expired - Lifetime CN1825556B (zh) 2005-02-25 2006-02-24 晶片支架

Country Status (6)

Country Link
US (2) US20060281314A1 (https=)
EP (1) EP1696470A3 (https=)
JP (1) JP4336320B2 (https=)
KR (1) KR101089766B1 (https=)
CN (1) CN1825556B (https=)
TW (1) TWI316744B (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004095529A2 (en) * 2003-03-21 2004-11-04 Tokyo Electron Limited Method and apparatus for reducing substrate backside deposition during processing
JP4705816B2 (ja) * 2005-07-27 2011-06-22 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP2009260041A (ja) * 2008-04-17 2009-11-05 Fuji Electric Device Technology Co Ltd 半導体装置の製造方法および成膜装置
US20110042209A1 (en) * 2008-06-25 2011-02-24 Canon Anelva Corporation Sputtering apparatus and recording medium for recording control program thereof
JP6088780B2 (ja) * 2012-10-02 2017-03-01 株式会社アルバック プラズマ処理方法及びプラズマ処理装置
US20140179108A1 (en) * 2012-12-21 2014-06-26 Applied Materials, Inc. Wafer Edge Protection and Efficiency Using Inert Gas and Ring
CN105185732A (zh) * 2015-08-24 2015-12-23 沈阳拓荆科技有限公司 一种可改变晶圆表面薄膜形貌的陶瓷环
JP7612618B2 (ja) * 2019-06-18 2025-01-14 ラム リサーチ コーポレーション 基板処理システム用の縮径キャリアリングハードウェア
JP7398988B2 (ja) 2020-03-13 2023-12-15 東京エレクトロン株式会社 スパッタ装置
KR102847491B1 (ko) * 2023-02-06 2025-08-20 주식회사 트리버스시스템 전자 소멸 방지 쉴드를 구비한 반도체 프로세스 챔버

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1437764A (zh) * 2000-07-17 2003-08-20 东京毅力科创株式会社 被处理体的保持装置
CN1481582A (zh) * 2000-12-15 2004-03-10 ���������ƴ���ʽ���� 处理方法和处理装置
CN1518073A (zh) * 2003-01-07 2004-08-04 ���������ƴ���ʽ���� 等离子体处理装置及聚焦环
CN1540738A (zh) * 2003-04-24 2004-10-27 ���������ƴ���ʽ���� 等离子体处理装置、聚焦环和基座

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4756810A (en) * 1986-12-04 1988-07-12 Machine Technology, Inc. Deposition and planarizing methods and apparatus
JP2737961B2 (ja) 1988-11-29 1998-04-08 日本電気株式会社 スパッタ成膜装置
TW277139B (https=) * 1993-09-16 1996-06-01 Hitachi Seisakusyo Kk
US6544379B2 (en) * 1993-09-16 2003-04-08 Hitachi, Ltd. Method of holding substrate and substrate holding system
US5529657A (en) * 1993-10-04 1996-06-25 Tokyo Electron Limited Plasma processing apparatus
TW254030B (en) * 1994-03-18 1995-08-11 Anelva Corp Mechanic escape mechanism for substrate
JPH10116964A (ja) * 1996-10-09 1998-05-06 Oki Electric Ind Co Ltd 半導体装置とその製造方法およびスパッタリング装置
US6146504A (en) * 1998-05-21 2000-11-14 Applied Materials, Inc. Substrate support and lift apparatus and method
US6159299A (en) * 1999-02-09 2000-12-12 Applied Materials, Inc. Wafer pedestal with a purge ring
US6344105B1 (en) * 1999-06-30 2002-02-05 Lam Research Corporation Techniques for improving etch rate uniformity
JP4673478B2 (ja) 2000-10-05 2011-04-20 キヤノンアネルバ株式会社 バイアススパッタリング装置及びバイアススパッタリング方法
JP4509369B2 (ja) * 2000-12-26 2010-07-21 キヤノンアネルバ株式会社 プラズマ支援スパッタ成膜装置
US6620736B2 (en) * 2001-07-24 2003-09-16 Tokyo Electron Limited Electrostatic control of deposition of, and etching by, ionized materials in semiconductor processing
US6776849B2 (en) * 2002-03-15 2004-08-17 Asm America, Inc. Wafer holder with peripheral lift ring
TWI228786B (en) * 2002-04-16 2005-03-01 Anelva Corp Electrostatic chucking stage and substrate processing apparatus

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1437764A (zh) * 2000-07-17 2003-08-20 东京毅力科创株式会社 被处理体的保持装置
CN1481582A (zh) * 2000-12-15 2004-03-10 ���������ƴ���ʽ���� 处理方法和处理装置
CN1518073A (zh) * 2003-01-07 2004-08-04 ���������ƴ���ʽ���� 等离子体处理装置及聚焦环
CN1540738A (zh) * 2003-04-24 2004-10-27 ���������ƴ���ʽ���� 等离子体处理装置、聚焦环和基座

Also Published As

Publication number Publication date
JP4336320B2 (ja) 2009-09-30
EP1696470A2 (en) 2006-08-30
TW200723429A (en) 2007-06-16
JP2006233283A (ja) 2006-09-07
US20110253048A1 (en) 2011-10-20
TWI316744B (en) 2009-11-01
KR20060094869A (ko) 2006-08-30
CN1825556A (zh) 2006-08-30
US8986522B2 (en) 2015-03-24
US20060281314A1 (en) 2006-12-14
EP1696470A3 (en) 2008-09-10
KR101089766B1 (ko) 2011-12-08

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Granted publication date: 20101013