CN1819138A - 制造cmos图像传感器中的隔离层的方法 - Google Patents
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Abstract
一种制造CMOS图像传感器中隔离层的方法,将氧和P-型离子注入到装置隔离区中而没有蚀刻损坏并执行加热工艺以在半导体基片中形成装置隔离层。离子注入掩模层被形成,其暴露低浓度的第一传导类型半导体基片上的装置隔离区。使用掩模层氧离子被注入到半导体基片中。执行加热工艺以在装置隔离区中形成氧化物层。栅绝缘层形成于半导体基片上而栅电极形成于栅绝缘层上。低浓度的第二传导类型扩散区形成于光电二极管区中。高浓度的第二传导类型扩散区形成于半导体基片中栅电极的两侧。具有高于半导体基片浓度的浓度的第一传导类型扩散区形成于半导体基片中低浓度的第二传导类型扩散区上。
Description
相关申请的交叉引用
本申请要求2004年12月30日提交的韩国专利申请No.10-2004-0117225的权益,其如同在此全部提出一样通过引用结合到本申请中。
技术领域
本发明涉及CMOS图像传感器,且更具体地,涉及制造CMOS图像传感器中隔离层的方法。所述方法可将氧和P-型离子注入到装置隔离区中而不承受蚀刻损坏并执行加热工艺以在半导体基片中形成装置隔离层。
背景技术
图像传感器是用于将光学图像转换为电信号的半导体装置。典型的互补金属-氧化物-硅(CMOS)图像传感器包括:电荷耦合装置,其中电荷载流子存储在彼此非常靠近的金属-氧化物-硅电容中;以及对应于像素数目的MOS晶体管,其使用CMOS技术来制造。使用MOS晶体管,输出信号通过位于外围电路区域中的信号处理电路和控制电路来检测。
用于将光学图像转换为电信号的CMOS图像传感器可包括具有光电二极管的信号处理芯片。放大器、模拟/数字转换器、内部电压发生器、时序发生器以及数字逻辑可连接在一个芯片上,由此减少空间、功率和成本。电荷耦合装置通过专门化的方法来制造,而CMOS图像传感器使用蚀刻硅晶片的方法来制造,该方法比制造电荷耦合装置的方法便宜。因此,CMOS图像传感器可被有利地大规模生产并且具有高度的集成。
参考图1,其根据相关技术来说明CMOS图像传感器,低浓度P-型外延层111生长于高浓度P-型基片110上,而用于隔离元件的浅沟槽隔离区118通过在外延层111中提供沟槽并用绝缘层填充沟槽而形成。栅绝缘层116形成于外延层111上,包括在浅沟槽隔离区118上,而由多晶硅构成的栅电极119形成于栅绝缘层116上。光阻剂(photoresist)图案(未示出)形成于外延层111上,包括在栅电极119上,而具有高能量的低浓度N-型扩散区121使用作为掩模(未示出)的光阻剂图案通过离子注入而形成于光电二极管区中。光阻剂图案被去除;间隔物122形成于栅电极119的两侧上;并且形成了高浓度N-型扩散区123。
P-型杂质以低于基片110浓度和高于外延层111浓度的浓度被注入到外延层111中,以在光电二极管区中低浓度N-型扩散区121上形成P-型扩散区124。
在通过前述方法所制造的CMOS图像传感器中,装置隔离层通过浅沟槽隔离而形成并且具有P-N-P结构的光电二极管形成于光电二极管区中。浅沟槽隔离区通过蚀刻半导体基片以形成沟槽以及利用绝缘层填充沟槽而形成。当半导体基片被蚀刻时,硅晶格可遭受蚀刻损坏。而且,由于沟槽被包括于光电二极管区中,在浅沟槽隔离区的界面制造了不必要的界面陷阱。相应地,结泄漏电流增大,并且图像传感器的噪声特性恶化。
发明内容
相应地,本发明指向一种制造CMOS图像传感器的隔离层的方法,该方法可基本上消除可由于相关技术的局限和缺点而导致的一个或多个公开的或未公开的问题或议题。
本发明包括一种制造CMOS图像传感器的隔离层的方法,其可形成装置隔离层而不蚀刻半导体基片以减少蚀刻损坏所导致的陷阱所产生的泄漏电流并普遍地改进图像传感器的特性。
本发明的另外的优点、目的和特征将在下面的描述中的部分中提出,并且通过研究下面内容对于本领域的技术人员将变得显而易见。本发明的目的和其它优点通过书面描述中特别指出的结构而可实现和获得。
根据本发明的目的,为了实现这些和其它优势,如在此所具体化和广泛描述的,制造CMOS图像传感器中隔离层的示例性方法包括:形成暴露半导体基片上的装置隔离区的离子注入掩模层;使用掩模层将氧离子注入到半导体基片中;以及执行加热工艺以在装置隔离区中形成氧化物层。
将理解的是,本发明的前面概括的描述和下面详细的描述都是示例性和说明性的,且意图提供如所要求的本发明的进一步的解释。
附图说明
附图被包括以提供本发明的进一步的理解并被引入和组成本申请的部分,其说明本发明的实施例并连同描述用来解释本发明。在图中:
图1为根据现有技术的CMOS图像传感器的截面视图;以及
图2A-2C为说明根据本发明制造CMOS图像传感器中的隔离层的方法的截面视图。
具体实施方式
现在将详细参考本发明的示例性的实施例,其实例在附图中说明。只要可能,类似的参考标号将在全部图中用来指示相同或相似的部件。
图2A-2C说明根据本发明的制造CMOS图像传感器中的隔离层的示例性的方法。
如图2A中所示,低浓度P-型外延层211生长于高浓度P-型基片210上,而垫氧化物层212生长于外延层211上。光阻剂(未示出)被涂覆在垫氧化物层212上并被暴露及显影以形成暴露装置隔离区的光阻剂图案213。使用光阻剂图案213作为掩模,氧离子和高浓度P-型杂质被顺序注入到外延层211中。半导体基片和被注入的杂质可具有不同的导电性。氧离子注入可使用传统的离子注入器来执行。
如图2B中所示,光阻剂图案213被去除并且执行加热工艺以形成氧化物层214,氧化物层214通过装置隔离区中的外延层213中的硅和氧之间的反应来起到装置隔离层的作用。高浓度P-型杂质被扩散以形成包围氧化物层214的隔离层扩散区231。
如图2C中所示,栅绝缘层216生长于外延层211上而由多晶硅构成的栅电极230形成于栅绝缘层216上。间隔物215形成于栅电极230的两侧。离子以约150-250KeV的高能量被注入到光电二极管区中以形成低浓度N-型扩散区225。例如,为源和漏区的高浓度N-型扩散区220形成于外延层211中栅电极214的两侧。P-型杂质以低于基片210浓度并高于外延层211浓度的浓度被注入到外延层211中以在光电二极管区中的低浓度N-型扩散区221上形成P-型扩散区222。
根据本发明,由于装置隔离层得以形成而不蚀刻半导体基片,有可能减少由蚀刻损坏所导致的陷阱所产生的泄漏电流,并且因而,改进图像传感器的特性。
对于本领域的技术人员显而易见的是,在本发明中可进行各种修改而不脱离本发明的精神或范围。因此,意图是,倘若这样的修改在所附权利要求及其等价的范围内,本发明将涵盖这样的修改。
Claims (10)
1.一种制造CMOS图像传感器中隔离层的方法,包括:
形成离子注入掩模层,所述离子注入掩模层暴露半导体基片上的装置隔离区;
使用所述掩模层将氧离子注入到所述半导体基片中;以及
执行加热工艺以在所述装置隔离区中形成氧化物层。
2.根据权利要求1的方法,进一步包括使用所述掩模层将P-型杂质注入到所述半导体基片中。
3.根据权利要求2的方法,其中所述P-型杂质以高于半导体基片浓度的浓度被注入。
4.根据权利要求1的方法,进一步包括使用所述掩模层将杂质注入到所述半导体基片中。
5.根据权利要求4的方法,其中所述半导体基片为第一传导性的并且其中被注入的杂质为第二传导性的。
6.根据权利要求1的方法,进一步包括:
在所述半导体基片上形成栅绝缘层;
在所述栅绝缘层上形成栅电极;
在光电二极管区中形成低浓度的第二传导类型扩散区。
在所述半导体基片中栅电极的两侧形成高浓度的第二传导类型扩散区;以及
在所述半导体基片中低浓度的第二传导类型扩散区上形成具有高于所述半导体基片浓度的浓度的第一传导类型扩散区。
7.一种制造CMOS图像传感器中隔离层的方法,包括:
形成离子注入掩模层,所述离子注入掩模层暴露低浓度的第一传导类型半导体基片上的装置隔离区;
使用所述掩模层将氧离子注入到所述半导体基片中;
执行加热工艺以在所述装置隔离区中形成氧化物层;
在所述半导体基片上形成栅绝缘层并在所述栅绝缘层上形成栅电极;
在光电二极管区中形成低浓度的第二传导类型扩散区;
在所述半导体基片中栅电极的两侧形成高浓度的第二传导类型扩散区;以及
在所述半导体基片中低浓度的第二传导类型扩散区上形成具有高于所述半导体基片浓度的浓度的第一传导类型扩散区。
8.根据权利要求7的方法,其中所述低浓度N-型扩散区使用约150-250KeV的能量通过离子植入工艺在光电二极管区中形成。
9.根据权利要求1的方法所制造的CMOS图像传感器。
10.根据权利要求7的方法所制造的CMOS图像传感器。
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KR100381026B1 (ko) * | 2001-05-22 | 2003-04-23 | 주식회사 하이닉스반도체 | 펀치전압과 포토다이오드의 집전양을 증가시킬 수 있는씨모스 이미지 센서 및 그 제조 방법 |
JP2003264283A (ja) * | 2002-03-12 | 2003-09-19 | Mitsubishi Electric Corp | 半導体装置の製造方法及び半導体装置 |
KR20040008912A (ko) * | 2002-07-19 | 2004-01-31 | 주식회사 하이닉스반도체 | 이미지센서의 하이브리드 소자분리 방법 |
KR20040031119A (ko) * | 2002-10-04 | 2004-04-13 | (주)그래픽테크노재팬 | 화소격리영역을 갖는 이미지 센서 |
US6888214B2 (en) * | 2002-11-12 | 2005-05-03 | Micron Technology, Inc. | Isolation techniques for reducing dark current in CMOS image sensors |
US6949445B2 (en) * | 2003-03-12 | 2005-09-27 | Micron Technology, Inc. | Method of forming angled implant for trench isolation |
-
2004
- 2004-12-30 KR KR1020040117225A patent/KR100672708B1/ko not_active IP Right Cessation
-
2005
- 2005-12-26 CN CNB2005101376018A patent/CN100447977C/zh not_active Expired - Fee Related
- 2005-12-29 US US11/319,483 patent/US20060148195A1/en not_active Abandoned
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
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US7560330B2 (en) | 2005-09-28 | 2009-07-14 | Dongbu Electronics, Co., Ltd. | CMOS image sensor and method for manufacturing the same |
US7939867B2 (en) | 2008-02-27 | 2011-05-10 | United Microelectronics Corp. | Complementary metal-oxide-semiconductor (CMOS) image sensor and fabricating method thereof |
US8268662B2 (en) | 2008-02-27 | 2012-09-18 | United Microelectronics Corp. | Fabricating method of complementary metal-oxide-semiconductor (CMOS) image sensor |
CN101533802B (zh) * | 2008-03-12 | 2011-02-09 | 联华电子股份有限公司 | 互补金属氧化物半导体影像感测器及其制造方法 |
CN102280464A (zh) * | 2011-09-01 | 2011-12-14 | 上海宏力半导体制造有限公司 | 像素隔离结构以及像素隔离结构制造方法 |
CN104952784A (zh) * | 2014-03-31 | 2015-09-30 | 中芯国际集成电路制造(上海)有限公司 | 沟槽隔离结构、其制作方法及半导体器件和图像传感器 |
CN104952784B (zh) * | 2014-03-31 | 2019-01-08 | 中芯国际集成电路制造(上海)有限公司 | 沟槽隔离结构、其制作方法及半导体器件和图像传感器 |
CN104157661A (zh) * | 2014-08-15 | 2014-11-19 | 北京思比科微电子技术股份有限公司 | 一种cmos图像传感器的制造方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20060077707A (ko) | 2006-07-05 |
US20060148195A1 (en) | 2006-07-06 |
KR100672708B1 (ko) | 2007-01-22 |
CN100447977C (zh) | 2008-12-31 |
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