CN1796967A - 制备电子显微镜检测样品用的夹具 - Google Patents
制备电子显微镜检测样品用的夹具 Download PDFInfo
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- CN1796967A CN1796967A CN 200410093464 CN200410093464A CN1796967A CN 1796967 A CN1796967 A CN 1796967A CN 200410093464 CN200410093464 CN 200410093464 CN 200410093464 A CN200410093464 A CN 200410093464A CN 1796967 A CN1796967 A CN 1796967A
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CNB2004100934648A CN100570322C (zh) | 2004-12-22 | 2004-12-22 | 制备电子显微镜检测样品用的夹具 |
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CNB2004100934648A CN100570322C (zh) | 2004-12-22 | 2004-12-22 | 制备电子显微镜检测样品用的夹具 |
Publications (2)
Publication Number | Publication Date |
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CN1796967A true CN1796967A (zh) | 2006-07-05 |
CN100570322C CN100570322C (zh) | 2009-12-16 |
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CNB2004100934648A Expired - Fee Related CN100570322C (zh) | 2004-12-22 | 2004-12-22 | 制备电子显微镜检测样品用的夹具 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105445074A (zh) * | 2014-06-13 | 2016-03-30 | 中芯国际集成电路制造(上海)有限公司 | 含有多个晶片样品的抛光样品及制备方法 |
-
2004
- 2004-12-22 CN CNB2004100934648A patent/CN100570322C/zh not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105445074A (zh) * | 2014-06-13 | 2016-03-30 | 中芯国际集成电路制造(上海)有限公司 | 含有多个晶片样品的抛光样品及制备方法 |
CN105445074B (zh) * | 2014-06-13 | 2018-06-22 | 中芯国际集成电路制造(上海)有限公司 | 含有多个晶片样品的抛光样品及制备方法 |
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Publication number | Publication date |
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CN100570322C (zh) | 2009-12-16 |
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Legal Events
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C06 | Publication | ||
PB01 | Publication | ||
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SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Effective date: 20111130 |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20111130 Address after: 201203 Shanghai Zhangjiang Road, Zhangjiang High Tech Park of Pudong New Area No. 18 Co-patentee after: Semiconductor Manufacturing International (Beijing) Corporation Patentee after: Semiconductor Manufacturing International (Shanghai) Corporation Address before: 201203 Shanghai Zhangjiang Road, Zhangjiang High Tech Park of Pudong New Area No. 18 Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation |
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CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20091216 Termination date: 20181222 |