TW416116B - Process for mapping metal contaminant concentration on a silicon wafer surface - Google Patents
Process for mapping metal contaminant concentration on a silicon wafer surface Download PDFInfo
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- TW416116B TW416116B TW088112167A TW88112167A TW416116B TW 416116 B TW416116 B TW 416116B TW 088112167 A TW088112167 A TW 088112167A TW 88112167 A TW88112167 A TW 88112167A TW 416116 B TW416116 B TW 416116B
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- H—ELECTRICITY
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- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
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Description
416116 五、發明說明(π 發明之背景 本發明之方法大致關於在半導體基材之表面上之金屬污 染物偵檢。更特別地,本方法有關對映單晶矽晶圓表面, 以測定其上之金屬污染分布之方法。本方法進一步關於用 於對映方法之參考或校正晶圓之製備。 適合用於積體電路製造之半導體晶圓為藉由自單晶矽錠 切割薄晶圓而製造。切片後,晶圓進行研光處理以使其具 有實質上均勻之厚度。然後蝕刻晶圓以去除損壞及製造光 滑表面。在習勻之厚度。然後蝕刻晶圓以去除損壞及製造 光滑表面。在習知晶圓成形處理之次一步驟為拋光步驟, 以在晶圓之至少一面上製造高反射性且無損壞表面。在此 拋光面上發生電子_裝置製造。 已知污染物在半導體晶圓表®上之存在,特別是金屬污 染物,可大為降低由其製造之積體電路之品質及性能。積 體電路之製造者因此對金屬雜質之表面濃度設定嚴格之限 制,剔除超過此濃度之晶圓。結果,石夕晶圓一般在一些或 所有之製備步驟後清潔,以助於降低存在於最終晶圓產物 之表面污染之量。 現存許多方法以分析晶圓表面以測定其上之金屬雜質濃 度。這些方法一般可基於其是否提供表面污染物之局部或 全部濃度數據而分成兩組。例如,提供表面污染物之全 部,或淨濃度數據之方法一般涉及存在於晶圓表面上之氧 化物層藉氫氟酸蒸氣或溶液之溶解,然後分析冷凝之蒸氣 或溶液以測定其中之金屬污染物濃度。此方法為有利的,416116 V. Description of the invention (π Background of the invention The method of the present invention is generally related to the detection of metal contamination on the surface of a semiconductor substrate. More specifically, this method involves mapping the surface of a single-crystal silicon wafer to determine its surface. Method for the distribution of metal contamination. This method is further related to the preparation of reference or calibration wafers for the mapping method. Semiconductor wafers suitable for integrated circuit manufacturing are manufactured by cutting thin wafers from monocrystalline silicon ingots After slicing, the wafer is polished to have a substantially uniform thickness. The wafer is then etched to remove damage and produce a smooth surface. At a uniform thickness, the wafer is then etched to remove damage and produce a smooth surface. The next step in the conventional wafer forming process is a polishing step to produce a highly reflective and undamaged surface on at least one side of the wafer. Electronic_device manufacturing occurs on this polished surface. Known contaminants are on the semiconductor wafer table The presence of ®, especially metal contaminants, can greatly reduce the quality and performance of integrated circuits manufactured by it. Therefore, the manufacturers of integrated circuits are The surface concentration of impurities is set to a strict limit, and wafers exceeding this concentration are rejected. As a result, Shi Xi wafers are generally cleaned after some or all of the preparation steps to help reduce the amount of surface contamination present in the final wafer product. Many methods exist to analyze the surface of a wafer to determine the concentration of metal impurities thereon. These methods can generally be divided into two groups based on whether they provide partial or full concentration data of surface contaminants. For example, provide all or a total of surface contaminants. The method of concentration data generally involves dissolving the oxide layer present on the wafer surface by hydrofluoric acid vapor or solution, and then analyzing the condensed vapor or solution to determine the concentration of metal contaminants therein. This method is advantageous,
第5頁 416116 五、發明說明(2) 因為其一般造成非常低金屬污染物含量之偵檢;即,此方 法為有利的,因為其一般具有相對測定金屬污染物之局部 濃度之方法為非常低之偵檢極限。此外,此方法有效提供 全部晶圓表面之污染濃度數據。 提供金屬污染物之局部濃度數據之方法一般涉及藉次要 離子質譜儀,A u g e r光譜分析,中子活化分析,或全X -射 線反射螢光光譜(TXRF)分析,分析晶圓表面。此方法為有 利的,因為其對晶圓表面本質上為非破壞性,其表示可在 相同之晶圓上實行多次分析。例如,在晶圓製造方法之任 何步驟後,可在進行次一步驟之前分析晶圓。此方法因此 提供監測製造方法及證據金屬污染之可能來源之方法。此 外,因為這些方法.提供晶圓表面之局部結果,表面可有效 地"對映";即,這些方法可用以測定表面上何處有金屬污 染。此數據為有益的,因為特定之污染圖樣可建議污染物 之來源。例如。晶圓中央圓形圖樣之污染物建議晶圓處理 夾頭為污染之來源|而大致均勻之污染物分布建議蝕刻溶 液或拋光漿液為污染來源。 因此,這些表面分析之局部方法提供不僅關於晶圓,亦 關於晶圓製造方法之非常有益之資訊。然而,為了使這些 方法提供可靠及可再現之結果,使用之方法與儀器必須適 當地校正。一般而言,因為可影響測量之任何因素,例 如,如儀器背景噪音,偵檢器與收集效率之變化,及來自 被偵檢雜質之反應之變化,用於此方法之儀器必須校正。 精確之校正一般需要考標準品之製備,或在此情形為晶Page 5 416116 V. Description of the invention (2) Because it generally causes detection of very low levels of metal contaminants; that is, this method is advantageous because it generally has a relatively low method for determining the local concentration of metal contaminants Detection limit. In addition, this method effectively provides data on the contamination concentration of the entire wafer surface. Methods for providing local concentration data of metal contaminants generally involve analyzing the wafer surface by using a secondary ion mass spectrometer, Auger spectrum analysis, neutron activation analysis, or total X-ray reflection fluorescence spectrum (TXRF) analysis. This method is advantageous because it is essentially non-destructive to the surface of the wafer, which means that multiple analyses can be performed on the same wafer. For example, after any step in a wafer manufacturing method, the wafer can be analyzed before proceeding to the next step. This method therefore provides a method for monitoring manufacturing methods and evidence of possible sources of metal contamination. In addition, because these methods provide local results on the wafer surface, the surface can be effectively " enantiomer " that is, these methods can be used to determine where metal contamination is on the surface. This data is beneficial because specific pollution patterns can suggest the source of the pollutant. E.g. For wafers with circular patterns in the center of the wafer, it is recommended that the wafer be processed. The chuck is the source of contamination | and for the approximately uniform distribution of contaminants, it is recommended that the etching solution or polishing slurry be the source of contamination. Therefore, these partial methods of surface analysis provide very useful information not only on wafers, but also on wafer manufacturing methods. However, in order for these methods to provide reliable and reproducible results, the methods and instruments used must be properly calibrated. In general, the instrument used for this method must be calibrated because of any factors that can affect the measurement, such as changes in the background noise of the instrument, changes in the detector and collection efficiency, and changes in the response from the detected impurities. Accurate calibration generally requires the preparation of standard products, or in this case crystals.
五、發明說明(3) 圓,其表面上之金屬污染物濃度必須符合非常嚴格之規 格。以此方式,可相對參考晶圓之已知雜質濃度校正裝置 之實際反映。 對這些晶圓設定之重要條件之一為’其在全部表面上均 勻地污染,以無關在參考晶圓表面上使用之位置而確定正 確及可靠之校正。對於特定之晶圓製造設備,亦希望表面 被感興趣之所有之各種金屬污染物均勻地污染。結果,雖 然參考晶圓為商業可得的,其無法必要地呈現發生試驗之 特定製造位置所需之特徵。此外,其無法必要地以高精確 度完成校正。 此外,吸氣經常為希望之矽晶圓特徵,其為各種性能試 驗調查之特徵。然_而,不易得到用於此試驗之參考晶圓。 因此,此試驗之結果需要使用i I CP-MS或無焰原子吸收光 譜多方核對,以改良此試驗之精確度。 因此,仍持續存在參考或校正晶圓之需求,其易於製備 以具有均勻地污染之表面,及其可作為適當地符合最終評 估之晶圓之製造條件與吸氣特徵之比較性對照。 發明之概要 因此,應注意本發明之目的為提供一種製備參考晶圓之 方法,其適合用於矽晶圓之非破壞性表面分析以測定其 上金屬污染物之濃度與分布;提供一種經濟地實行且節省 時間之方法;提供一種具有均勻地污染之表面之參考晶 圓;提供一種特別適合用於藉全反射X-射線螢光之矽晶圓 表面分析之參考晶圓;及提供一種對映矽晶圓表面之表面V. Description of the invention (3) For circles, the concentration of metal pollutants on the surface must meet very strict specifications. In this way, the actual reflection of the known impurity concentration correction device of the reference wafer can be compared. One of the important conditions set for these wafers is that they are uniformly contaminated on all surfaces, and that a correct and reliable calibration is determined regardless of the position used on the reference wafer surface. For specific wafer manufacturing equipment, it is also desirable that the surface be uniformly contaminated with all the various metal contaminants of interest. As a result, although the reference wafer is commercially available, it cannot necessarily exhibit the characteristics required for the specific manufacturing location where the test occurs. In addition, it cannot necessarily perform the correction with high accuracy. In addition, gettering is often a desirable silicon wafer feature, which is characteristic of various performance test investigations. However, it is not easy to obtain a reference wafer for this test. Therefore, the results of this test need to be checked using i I CP-MS or flameless atomic absorption spectroscopy to improve the accuracy of this test. Therefore, there continues to be a need for reference or calibration wafers, which are easy to prepare to have uniformly contaminated surfaces, and which can serve as a comparative comparison of the manufacturing conditions and getter characteristics of the wafers that appropriately meet the final evaluation. SUMMARY OF THE INVENTION Therefore, it should be noted that the object of the present invention is to provide a method for preparing a reference wafer, which is suitable for non-destructive surface analysis of silicon wafers to determine the concentration and distribution of metal contaminants thereon; Implementation and time-saving method; providing a reference wafer with a uniformly contaminated surface; providing a reference wafer particularly suitable for surface analysis of a silicon wafer by total reflection X-ray fluorescence; and providing a reflection Surface of silicon wafer surface
416116 五、發明說明(4) 污染物濃度之方法,其中使用此參考晶圓。 因此,簡言之,本發明係關於一種製備適合全反射X -射 線螢光光譜計之校正之參考晶圊之方法。此方法包含製備 包含水與水溶性金屬鹽之水性鹽溶液,然後混合一部份之 水性鹽溶液與有機溶劑以形成處理溶液。實質上無金屬之 矽晶圓浸於處理溶液及移除。經處理之晶圓然後乾燥。 本發明進一步關於一種藉全反射X-射線螢光光譜計測定 石夕晶圓表面上金屬污染物分在之方法。此方法特徵為,用 以校正光譜計之參考晶圓藉由將原生晶圓浸於混合物預定 之時間,其藉由混合所需金屬之水溶性鹽與選自低碳醇或 酮之有機溶劑而得,然後在使用前乾燥如此處理之晶圓而 製備。 . 本發明之其他目的與特點部i為明顯的及部份在以下指 出。 圖式之簡要說明 圖1為長條形狀之圖表,其描述調查依照本發明方法製 備之參考晶圓表面上之錄沈積分布之結果,如全X-射線反 射螢光光譜計所測定。 圖2為長條形狀之圖表,其描述調查藉由此技藝常用之 方法實行之旋塗製備之參考晶圓表面上之鎳沈積分布之結 果,如全X -射線反射螢光光譜計所測定。 較佳具體實施例之詳細說明 本發明之方法造成參考或校正晶圓之製備,為了用於測 定藉習知製造方法製備之矽晶圓表面上金屬污染物之濃度416116 V. Description of the invention (4) Method for the concentration of pollutants, in which this reference wafer is used. Therefore, in short, the present invention relates to a method for preparing a reference crystal suitable for the correction of a total reflection X-ray fluorescence spectrometer. This method includes preparing an aqueous salt solution comprising water and a water-soluble metal salt, and then mixing a portion of the aqueous salt solution with an organic solvent to form a treatment solution. Substantially metal-free silicon wafers are immersed in a processing solution and removed. The processed wafer is then dried. The invention further relates to a method for measuring the concentration of metal contaminants on the surface of Shi Xi wafer by a total reflection X-ray fluorescence spectrometer. This method is characterized in that the reference wafer for calibrating the spectrometer is prepared by immersing the original wafer in the mixture for a predetermined time. Then, the wafer thus prepared is dried before use. Other objects and features of the present invention are obvious and partly indicated below. Brief Description of the Drawings Figure 1 is a bar-shaped chart describing the results of investigating the deposition distribution on the surface of a reference wafer prepared according to the method of the present invention, as measured by a full X-ray reflection fluorescence spectrometer. Fig. 2 is a bar-shaped graph describing the results of investigating the distribution of nickel deposition on the surface of a reference wafer prepared by spin coating performed by a method commonly used in this technique, as measured by a full X-ray reflection fluorescence spectrometer. Detailed description of a preferred embodiment The method of the present invention results in the preparation of a reference or calibration wafer for the purpose of measuring the concentration of metal contaminants on the surface of a silicon wafer prepared by conventional manufacturing methods
第8頁 416116 五、發明說明(5) 與分布之儀器校正之目的,其表面以一或更多種感興趣之 金屬雜質實質上均勻污染。更特別地,本方法造成用於全 X-射線反射螢光儀器校正,具有實質上均勻污染表面之參 考晶圓之製備,為了測定其上金屬污染物之濃度與分布之 目的,如此使T X R F儀器適用於對映石夕晶圓表面。 依照本發明之方法,使用常用之金屬水溶性鹽(常用於 製備用於此型儀器校正標準品之目的之純度)製備水溶液 以分析樣品晶圓。習知矽晶圓製造條件或環境一般生成晶 圓表面被如鋅,鎳,銅,鐵,鈣與鉻等之金屬污染。因 此,此水溶液可藉由將一或更多種各鹽加入定量之純水而 製備。然而,一般而言,製備各金屬鹽之原料或標準溶液 以具有約1 0 ppm(百萬份點)之濃度。 一但製備,各原.料溶液混合是量之商業可得揮發性有機 溶劑(適用於製備用於此型儀器校正標準品之目的之純 度),其與水互溶,例如,如一般之低分子量醇或酿1,使 得其在室溫易於蒸發。較佳為,這些低分子量醇具有三個 碳或更少,其包括曱醇,乙醇,丙醇,異丙醇,而丙醇為 較佳之酮。在特佳具體實施例中,使用異丙醇。 一般而言,原料溶液與溶劑可以造成鹽保留在溶液中及 足以造成實質上均勻沈積在參考晶圓表面上之適當金屬污 染物濃度之任何比例混合,以製備處理溶液。然而,一般 而言,就體積比例而言,處理溶液中原料溶液對溶劑之比 例範圍為約1 : 1至約1 : 1 0 0。 一但原料溶液與溶劑已完全混合,及如此製備處理溶Page 8 416116 V. Description of the invention (5) For the purpose of instrument calibration for distribution, its surface is substantially uniformly contaminated with one or more metal impurities of interest. More specifically, this method results in the preparation of a reference wafer for calibration of a full X-ray reflection fluorescent instrument with a substantially uniformly polluted surface. In order to determine the concentration and distribution of metal contaminants thereon, the TXRF instrument is thus made. Applicable to the surface of anti-Shi Xi wafer. According to the method of the present invention, a common metal water-soluble salt (commonly used to prepare the purity for the purpose of calibration standards of this type of instrument) is used to prepare an aqueous solution to analyze a sample wafer. Conventional silicon wafer manufacturing conditions or the environment generally produce crystals. Surfaces are contaminated by metals such as zinc, nickel, copper, iron, calcium, and chromium. Therefore, this aqueous solution can be prepared by adding one or more salts to a certain amount of pure water. However, in general, the raw material or standard solution for preparing each metal salt is to have a concentration of about 10 ppm (parts per million). Once prepared, all raw material solutions are mixed in quantities of commercially available volatile organic solvents (purity suitable for the purpose of preparing calibration standards for this type of instrument), which are miscible with water, for example, generally low molecular weight Alcohol or Brew 1, making it easy to evaporate at room temperature. Preferably, these low molecular weight alcohols have three carbons or less and include methanol, ethanol, propanol, isopropanol, and propanol is the preferred ketone. In a particularly preferred embodiment, isopropanol is used. In general, the raw material solution and the solvent can be mixed in any proportion sufficient to cause the salt to remain in the solution and at an appropriate metal contaminant concentration sufficient to cause substantially uniform deposition on the reference wafer surface to prepare a processing solution. However, in general, in terms of volume ratio, the ratio of the raw material solution to the solvent in the processing solution ranges from about 1: 1 to about 1: 1. Once the raw material solution and the solvent have been completely mixed,
第9頁 416116 五、發明說明(6) 液,實質上均勻地污染以製備參考晶圓之晶圓接觸處理溶 液。一般而言,藉由使用完全或部份晶圓轉動而浸潰晶 圓,以確定全部表面之完全處理,足以確定完全表面處理 亦確定實質上均勻地給予全部晶圓表面適當污染程度之時 間而處理,因此,其一般表示晶圓表面接觸處理溶液約1 分鐘至約1 0分鐘。 —般而言,接觸處理溶液之晶圓可為適用於製備此型校 正標準品之任何晶圓,其已在嚴格製造條件中製備。換言 之,本質上可處理任何矽晶圓,其條件為其首先接受此技 藝之清潔處理標準,有足以有效地降低感興趣之金屬雜質 濃度至夠低之程度,使得這些雜質不干擾校正方法。因 此,使用"原生晶_圓,或具有實質上無金屬表面之晶圓。 一旦超過處理時間,晶圓i瘡液移除(即,去除晶圓表 面上之過量處理溶液)然後晶圓在室溫(即,在一般範圍為 約2 0至約2 5 °C之溫度)於習知無塵室設定(即,本質上無任 何干擾校正方法之金屬污染物之室)中乾燥。由於有機溶 劑賦予處理溶液之揮發性,晶處理之晶圓快速地乾燥而無 使用加速乾燥處理之裝置之需要。 乾燥之晶圓現在可依照用於特定儀器之常用校正方法, 作為用於校正特定儀器之目的之參考晶圓,其被用以分析 得自製造方法之樣品晶圓表面。在較佳具體貫施例中,本 發明之參考晶圓可用以藉此技藝常用之方法校正全X-射線 反射螢光儀(例如> MTREX61 0T型,其商業得自曰本大阪 之Technos公司)。Page 9 416116 V. Description of the invention (6) The liquid is substantially uniformly contaminated to prepare a wafer contact processing solution for a reference wafer. Generally speaking, by using full or partial wafer rotation to immerse the wafer to determine the complete treatment of the entire surface, it is sufficient to determine the complete surface treatment and also the time to substantially uniformly impart an appropriate degree of contamination to the entire wafer surface. Processing, therefore, it generally means that the wafer surface is in contact with the processing solution for about 1 minute to about 10 minutes. -In general, the wafer in contact with the processing solution can be any wafer suitable for the preparation of this type of calibration standard, which has been prepared under strict manufacturing conditions. In other words, essentially any silicon wafer can be processed on the condition that it first accepts this technology's clean processing standard, which is effective enough to reduce the concentration of metal impurities of interest to a sufficiently low level so that these impurities do not interfere with the calibration method. Therefore, a "primary crystal circle" or a wafer having a substantially metal-free surface is used. Once the processing time is exceeded, the wafer sores are removed (ie, excess processing solution is removed from the wafer surface) and the wafer is at room temperature (ie, at a temperature generally in the range of about 20 to about 25 ° C) Dry in a conventional clean room setting (ie, a room that is essentially free of metal contaminants that interfere with the calibration method). Because of the volatility that the organic solvent imparts to the processing solution, wafers that are crystal-processed dry quickly without the need for an accelerated drying process. The dried wafer can now be used as a reference wafer for the purpose of calibrating a specific instrument in accordance with a common calibration method for a specific instrument, which is used to analyze the surface of a sample wafer obtained from a manufacturing method. In a preferred embodiment, the reference wafer of the present invention can be used to calibrate a full X-ray reflection fluorescence meter (such as the > MTREX61 0T model), which is commonly obtained by this technology from the Technos Corporation ).
第10頁 416116 五、發明說明(7) 關於以上,可見到依照本發明之方法,製備具有一或更 多種感興趣之金屬污染物濃度之參考晶圓,此濃度實質上 均勻地分布於全部晶圓表面上。本方法因此提供更有效且 節省成本之方法製備此種晶圓,因為其可在發生晶圓製造 之處原地實行。此外,為了製備參考晶圓之目的,藉由在 晶圓製造設備實行本方法及使用得自生產線之晶圓,可收 集更正確及更可靠之數據。 如以下之實例所描述,可容易地及有效地製備適合用於 全X-射線反射螢光儀之校正之參考晶圓,以在全部晶圓表 面上具有實質上均勻之污染物濃度。然而,應注意,在 此提供及以上提供之方法條件可為所述以外者而不背離本 發明之範圍。 _ 實例 ' 製備鐵,銅1錄,鋅,鉻1及辦之水性原料溶液,使得 各金屬在溶液中之濃度為約1 Ο ΡΡΠ1。取出得自各原料溶液 之等份量,其範圍為各約1至約200 cc,加入異丙醇使得 各溶液之總體積為約1 0 0 0 c c。搖動如此製備之各處理溶 液以確定完全混合,然後置於浸潰槽中。已清潔之六英吋 矽晶圊(以此技藝之標準方法清潔)然後浸於含鎳處理溶液 之槽中約3至約4分鐘。晶圓然後自槽移除*使過量溶液自 其滴落後,晶圓在室溫於無塵室中乾燥。 乾燥後,然後在晶圓表面上九個不同之位置藉含X-射線 反射螢光儀(TREX610YT型,其得自Technos公司)分析參考 晶圓。現在參考圖1 ,顯示長條形之圖表,其描述整合得 11111 __ ill; 1 1 _ II 1 416116 五、發明說明(8) 自所有9個位置之鎳沈積。此外,現在參考圖2,亦藉由在 以旋塗製備之商業可得參考晶圓上重複所示之步驟而測定 錯沈積。 金屬沈積在上述之方法製備之參考樣本上及以旋塗製備 之商業可得参考樣本上以Technos公司製造之全反射螢光 X -射線裝置測定。試驗結果示於以下表1。 表1 分析處號碼 本發明之方法 商業可得樣本 1 13.0441 77. 4742 2 8.0963 89. 8240 3 11.5328 81.2665 4 11.8583 85. 5087 5 11.2154 118.6100 6 10. 5565 75. 6795 7 7.4390 71.8325 8 9. 6834 99.7520 9 8.6127 83.1578 平均值 10. 2265 87.0118 標準差 1.8983 14.4421Page 10 416116 V. Description of the invention (7) Regarding the above, it can be seen that according to the method of the present invention, a reference wafer having a concentration of one or more metal contaminants of interest is prepared, and this concentration is distributed substantially uniformly throughout On the wafer surface. The method thus provides a more efficient and cost-effective method for preparing such wafers, as it can be performed in situ where wafer fabrication occurs. In addition, for the purpose of preparing a reference wafer, by implementing the method in a wafer manufacturing facility and using a wafer obtained from a production line, more accurate and reliable data can be collected. As described in the following example, a reference wafer suitable for calibration of a full X-ray reflection fluorescence can be easily and efficiently prepared to have a substantially uniform contaminant concentration on the entire wafer surface. It should be noted, however, that the method conditions provided herein and above may be other than those described without departing from the scope of the invention. _ EXAMPLE '' An aqueous raw material solution of iron, copper, zinc, chromium 1 and sodium was prepared so that the concentration of each metal in the solution was about 10 PPII. Take out equal parts from each raw material solution in the range of about 1 to about 200 cc each, and add isopropanol to make the total volume of each solution about 100 c c. Each of the treatment solutions thus prepared was shaken to ensure complete mixing, and then placed in an immersion tank. The cleaned six-inch silicon wafer (cleaned by standard techniques) is then immersed in a bath containing a nickel-containing treatment solution for about 3 to about 4 minutes. The wafer is then removed from the tank * so that excess solution will drip from it, and the wafer is dried in a clean room at room temperature. After drying, the reference wafers were then analyzed by X-ray reflection fluorescence (TREX610YT, available from Technos) at nine different locations on the wafer surface. Referring now to FIG. 1, a bar chart is shown, the description of which is integrated 11111 __ ill; 1 1 _ II 1 416116 V. Description of the invention (8) Nickel deposition from all 9 locations. In addition, referring now to FIG. 2, staggered deposits are also determined by repeating the steps shown on a commercially available reference wafer prepared by spin coating. Metals were deposited on reference samples prepared by the methods described above and commercially available reference samples prepared by spin coating using a total reflection fluorescent X-ray apparatus manufactured by Technos. The test results are shown in Table 1 below. Table 1 Analysis No. Commercially available samples of the method of the invention 1 13.0441 77. 4742 2 8.0963 89. 8240 3 11.5328 81.2665 4 11.8583 85. 5087 5 11.2154 118.6100 6 10. 5565 75. 6795 7 7.4390 71.8325 8 9. 6834 99.7520 9 8.6127 83.1578 Mean 10.2265 87.0118 Standard deviation 1.8983 14.4421
第12頁 416116 五、發明說明(9) 如這些試驗結果所證明,其可觀察到本發明製備之參考 晶圓之鎳沈積為實質上均勻的,鎳污染之均勻度相對商業 可得參考晶圓大為改良。因此,已發現本發明之參考晶圓 用於工業用途為可接受的,本發明因此適合用於製備用於 定量分析之校正晶圓。 應注意,金屬沈積實際上使用本發明之參考樣本測定, 而且發現所得之測定結果再現性高。 如上所述,例如,鋅,鎳,銅,鐵,鈣與鉻,藉由製 備水性鹽溶液及將其混合特定之有機溶劑,可以預定量沈 積於原生晶圓表面,以製備參考樣本。如此製備之參考樣 本因此藉全反射螢光X-射線裝置用於樣品晶圓表面上之金 屬沈積之測定β以_此方式,本發明可呈現更正確地測定晶 圚表面上金屬沈積之效果,可在製造位置容易地實行 隶終晶圓之產物檢視1品質控制寺。Page 12 416116 V. Description of the invention (9) As proved by these test results, it can be observed that the nickel deposition of the reference wafer prepared by the present invention is substantially uniform, and the uniformity of nickel contamination is relatively relative to commercially available reference wafers. Greatly improved. Therefore, it has been found that the reference wafer of the present invention is acceptable for industrial use, and the present invention is therefore suitable for preparing a calibration wafer for quantitative analysis. It should be noted that the metal deposition was actually measured using the reference sample of the present invention, and the measurement results obtained were found to be highly reproducible. As described above, for example, zinc, nickel, copper, iron, calcium, and chromium can be deposited on the surface of the original wafer by a predetermined amount by preparing an aqueous salt solution and mixing it with a specific organic solvent to prepare a reference sample. The reference sample thus prepared therefore uses a total reflection fluorescent X-ray device for the measurement of metal deposition on the surface of the sample wafer. In this way, the present invention can exhibit the effect of more accurately measuring the metal deposition on the surface of the crystallite. It is easy to carry out wafer inspection at the manufacturing location. 1Quality control temple.
第13頁Page 13
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