CN108735575A - Wafer processing method - Google Patents
Wafer processing method Download PDFInfo
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- CN108735575A CN108735575A CN201710254307.8A CN201710254307A CN108735575A CN 108735575 A CN108735575 A CN 108735575A CN 201710254307 A CN201710254307 A CN 201710254307A CN 108735575 A CN108735575 A CN 108735575A
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- wafer
- processing method
- wafer processing
- etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
Abstract
The present invention provides a kind of wafer processing method, including：One wafer is provided, there is metallic pollution on the wafer；The wafer is subjected to wet-treating；The wafer after wet-treating is heat-treated；The wafer after heat treatment is performed etching into processing.Wafer processing method provided by the invention, wafer with metallic pollution is handled, first pass through the metallic pollution that wet processing carries out pretreatment removal wafer outer surface, it is thermally treated again that metallic molecule can be precipitate into wafer surface layer, then the metallic pollution on wafer surface layer is got rid of in etched processing, to solve the problems, such as that tenor is excessively high in wafer.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors more particularly to a kind of wafer processing methods.
Background technology
With the continuous development of semiconductor fabrication, the characteristic size of wafer has been enter into nanometer era, this is also to partly leading
Body manufacturing technology proposes new challenge, and wafer is more and more thinner, and the utilization of low-K dielectric is also more and more extensive, therefore to golden on wafer
The requirement for belonging to concentration is also higher and higher, if metal concentration is excessively high, influences whether the electrical of the film layer formed on wafer and device
Performance etc..
Existing semiconductor fabrication can accomplish up to 99.9999% to the purity of silicon in wafer, but
It, inevitably can be by metallic pollution, for example, cutting down the chemical mechanical grinding of needs from crystal ingot in wafer in numerous technique
(CMP) etc. in last part technologies and in other metal deposition process, remaining metallic molecule would be possible to influence below on wafer
The quality for the chip produced.
Therefore, how to be handled wafer to prevent the problem that metal concentration is excessively high on wafer is those skilled in the art
A technical problem urgently to be resolved hurrily.
Invention content
The purpose of the present invention is to provide a kind of wafer processing method, solve the problems, such as that metal concentration is excessively high on wafer.
To solve the above-mentioned problems, the present invention provides a kind of wafer processing method, including：
One wafer is provided, there is metallic pollution on the wafer；
The wafer is subjected to wet-treating；
The wafer after wet-treating is heat-treated；
The wafer after heat treatment is performed etching into processing.
Optionally, in the wafer processing method, the metallic pollution includes one in copper, titanium, chromium, molybdenum, tungsten or nickel
Kind is a variety of.
Optionally, in the wafer processing method, the solution that the wet processing uses includes ammonium hydroxide and peroxide
Change hydrogen.
Optionally, in the wafer processing method, the temperature of the heat treatment is 150 DEG C~600 DEG C.
Optionally, in the wafer processing method, the gaseous environment of the heat treatment is nitrogen.
Optionally, in the wafer processing method, the time of the heat treatment is 2 hours~5 hours.
Optionally, in the wafer processing method, the etching processing is wet etching.
Optionally, in the wafer processing method, the solution that the wet etching uses includes nitric acid and hydrofluoric acid；Or
The solution of person, use include potassium hydroxide and b propanol.
Optionally, in the wafer processing method, the etching processing etches away thickness after the heat treatment within 1um
The wafer.
Optionally, in the wafer processing method, further include：Tenor is carried out to the wafer after etching processing
Test
Optionally, in the wafer processing method, by microwave photoconductive decay test to described in after etching processing
Wafer carries out tenor test.
Optionally, in the wafer processing method, the microwave photoconductive decay test includes：The wafer is N-type
When doping, the testing time is in 1000uS or more；Alternatively, when the wafer is p-type doping, the testing time is in 100uS or more.
Optionally, in the wafer processing method, microwave photoconductive decay test by Miller index to etching at
The wafer after reason is tested.
Optionally, in the wafer processing method, further include：The heat treatment is carried out again and carries out the quarter again
Erosion is handled.
Optionally, in the wafer processing method, further include：The surface of the wafer after etching processing is subjected to oxygen
Change processing and forms silicon oxide layer.
Optionally, in the wafer processing method, the process conditions for forming the silicon oxide layer include：Oxygen and argon gas
Under environment, temperature is 700 DEG C~1000 DEG C.
Optionally, in the wafer processing method, the thickness of the silicon oxide layer is within 50nm.
Wafer processing method provided by the invention handles the wafer with metallic pollution, first passes through wet processing
Carry out the metallic pollution of pretreatment removal wafer outer surface, then it is thermally treated metallic molecule can be precipitate into wafer surface layer, then
The metallic pollution on wafer surface layer is got rid of in etched processing, to solve the problems, such as that tenor is excessively high in wafer.
Description of the drawings
Fig. 1 is the flow chart of the wafer processing method of the embodiment of the present invention.
Specific implementation mode
In order to keep objects, features and advantages of the present invention more obvious and easy to understand, attached drawing is please referred to.It should be clear that this explanation
Structure, ratio, size etc. depicted in book institute accompanying drawings, only to coordinate the revealed content of specification, for being familiar with this
The personage of technology understands and reads, and is not limited to the enforceable qualifications of the present invention, therefore does not have technical essence meaning
Justice, the modification of any structure, the change of proportionate relationship or the adjustment of size are not influencing the effect of present invention can be generated and institute
Under the purpose that can reach, should all still it fall in the range of disclosed technology contents obtain and can cover.
As shown in Figure 1, a kind of wafer processing method provided by the invention, including：
Step S10, one wafer is provided, there is metallic pollution on the wafer；
Step S20, the wafer is subjected to wet-treating；
Step S30, the wafer after wet-treating is heat-treated；
Step S40, the wafer after heat treatment is performed etching into processing.
Each step of the wafer processing method of the present invention is introduced in greater detail below.
First, according to step S10, a wafer is provided, there is metallic pollution on the wafer, it is to be understood that wafer
If can be the wafer of pure silicon, adulterate and/or form the wafer of photopolymer layer and device architecture, in the present embodiment,
Only to the general description of wafer, it is not limited to specific wafer.The solution of the present invention is applicable to golden in wafer
Belong to the higher technique of content requirement, and since technology accident etc. causes the feelings such as metallic pollution on wafer in process of manufacture
Condition, to by by being further processed, the content of metal in wafer being made to reach requirement these wafers with metallic pollution.
In the present embodiment, the metallic pollution includes one or more in copper, titanium, chromium, molybdenum, tungsten or nickel, is partly being led
The utilization of body technology metal includes mainly that these types all may be used through the invention for example, copper is commonly used for wiring and through-hole in wafer
To prevent above-mentioned metallic pollution from influencing the electric property on wafer to a certain extent.
Then, according to step S20, the wafer is subjected to wet-treating, simultaneously by the solution soluble solution in wet-treating
The metallic pollution that wafer outer surface is adhered to is taken away, wafer outer surface can preferably be disposed by carrying out pretreatment by wet-treating
Metallic pollution, prevent the metallic pollution of these outer surfaces from influencing wafer surface layer.
The solution that the wet processing uses includes ammonium hydroxide (NH3) and hydrogen peroxide (H OH2O2), ammonium hydroxide can be with
It is preferably chemically reacted with metallic pollution, hydrogen peroxide can preferably promote metallic pollution as a kind of strong oxidizer
Chemical reaction.
Then, according to step S30, the wafer after wet-treating is heat-treated, outside the wafer after wet-treating
The metallic pollution on surface has been removed, but may have a small amount of metallic pollution to be transferred into wafer surface layer, needs into one
Metallic molecule in wafer surface layer can be precipitate into wafer surface layer by the processing of step by being heat-treated related process.
Optionally, the temperature of the heat treatment be 150 DEG C~600 DEG C, temperature can be respectively set as 150 DEG C, 200 DEG C, 250
DEG C, 300 DEG C, 400 DEG C, 500 DEG C, 600 DEG C etc., so as to be selected according to the degree of metallic pollution and different metals etc.
It selects, the equipment such as high temperature furnace may be used to realize in heat treatment, can be moved within the said temperature range towards wafer surface layer with metallic molecule
It is dynamic.
The gaseous environment of the influence of environment in order to prevent, the heat treatment is nitrogen, that is, wafer is in the environment of nitrogen
Under be heat-treated, due to nitrogen chemical property stablize, the wafer in other gases affects to heating can be prevented.
Optionally, the time of the heat treatment is 2 hours~5 hours, the time can be set in 2 hours, 2.5 hours, it is 3 small
When, 4 hours, 5 hours etc., can preferably be realized in this time range metallic molecule towards crystal column surface move, in this implementation
In example, for actual conditions since heat treatment is typically while handling multiple wafers with metallic pollution, not directed to metal
The special circumstances such as the especially few wafer of contaminant capacity or single wafer combine in processing time length and need to take industrial production
Needed for preferred time range.
Finally, according to step S40, the wafer after heat treatment is performed etching into processing, in wafer after heat treatment
Metallic molecule should have been distributed among wafer surface layer, then can be by the metal in wafer surface layer and surface layer point by etching processing
Son removes together, to achieve the purpose that reduce tenor in wafer.
Optionally, the etching processing is wet etching, and wet etching is isotropic etching, entire for wafer surface layer
The adaptability of removal is preferable, and the crystal column surface uniformity after wet etching is preferable, while metallic pollution can enter in etching liquid,
It prevents from polluting again.
In the present embodiment, the solution that the wet etching uses includes nitric acid (HNO3) and hydrofluoric acid (HF)；Alternatively, adopting
Solution includes the solution of potassium hydroxide (KOH) and b propanol (IPA), and 23.4wt%, second can be used in the concentration of potassium hydroxide
13.3wt% can be used in the concentration of propyl alcohol.
Metallic pollution in order to prevent, the etching processing etch away the wafer of the thickness after the heat treatment within 1um,
When metallic pollution is lighter, relatively thin thickness can be etched away, when metallic pollution is serious, 1um thickness can be fallen with selective etching
Wafer surface layer, it is, of course, also possible to according to thickness of film layer formed on the thickness of wafer needs and wafer etc. come selective etching
The thickness fallen, for example, being formed with the film layer of 1um or so on wafer surface layer, you can etched away the film layer with selection.
In order to further verify, the wafer processing method further includes：To the wafer after etching processing into row metal
Content measuring, to identify whether tenor in wafer meets the requirements.
In the present embodiment, (Microwave Photo Conductive Decay are tested by microwave photoconductive decay
Life time measurement, μ-PCD) tenor test is carried out to the wafer after etching processing, it obtains accurate
Tenor,
The microwave photoconductive decay is tested：When the wafer is n-type doping, the testing time is in 1000uS or more；
Alternatively, when the wafer is p-type doping, the testing time is in 100uS or more.It is different by being used to different doping (N-type or p-type)
Time tested, n-type doping or p-type doping refer to the doping method on wafer surface layer that needs to be tested, due to N-type
Based on electronic conduction, p-type is adulterated based on hole conduction for doping, long using different time in microwave photoconductive decay test
It is short to obtain more accurate test data.
Optionally, after the microwave photoconductive decay test presses Miller index (Miller indices) to etching processing
The wafer is tested, and Miller index is the relatively prime integer defined with structure cell basic vector, to indicate the direction of crystal face, also known as
Miller index (100) can be used to carry out microwave photoconductive decay test in the particular embodiment in the indices of crystallographic plane.
Correspondingly, the wafer processing method further includes：The heat treatment is carried out again and is carried out at the etching again
Reason, it is to be understood that for microwave photoconductive decay test not by wafer, not by wafer be that tenor is super
The wafer of bid alignment request, tenor requires or standard can be needed to set by technique, is not limited, that is, for gold
Belong to and pollute more serious and tenor could not be made to reach requirement by a wafer processing method, is heat-treated again
And etching processing, to make tenor in claimed range, and, can by carry out again it is described heat treatment and again into
The row etching processing, further decreases the content of metallic pollution, obtains the wafer of higher quality.
In order to shield, the wafer processing method further includes：By the surface of the wafer after etching processing into
Row oxidation processes form silicon oxide layer, and the influence of air and steam etc. is completely cut off by silicon oxide layer, and are subsequent other works
Skill and method provide protective layer, for example, prevent shifted during microwave photoconductive decay is tested and contact process in caused by damage.
Optionally, the process conditions for forming the silicon oxide layer include：Under oxygen and ar gas environment, temperature is 700 DEG C
~1000 DEG C, temperature may be selected 700 DEG C, 800 DEG C, 900 DEG C, 100 DEG C etc..
Optionally, the thickness of the silicon oxide layer is within 50nm, if the wafer after etching processing is thicker, can be formed
Thicker silicon oxide layer can form relatively thin silicon oxide layer, and can be according to follow-up work if the wafer after etching processing is relatively thin
The needs of skill, such as the continuity etc. of process environments, complexity and subsequent technique carry out the thickness of selective oxidation silicon layer.
Wafer processing method provided by the invention handles the wafer with metallic pollution, first passes through wet processing
Carry out the metallic pollution of pretreatment removal wafer outer surface, then it is thermally treated metallic molecule can be precipitate into wafer surface layer, then
The metallic pollution on wafer surface layer is got rid of in etched processing, to solve the problems, such as that tenor is excessively high in wafer.
Foregoing description is only the description to present pre-ferred embodiments, not to any restriction of the scope of the invention, this hair
Any change, the modification that the those of ordinary skill in bright field does according to the disclosure above content, belong to the protection of claims
Range.
Claims (17)
1. a kind of wafer processing method, which is characterized in that the wafer processing method includes：
One wafer is provided, there is metallic pollution on the wafer；
The wafer is subjected to wet-treating；
The wafer after wet-treating is heat-treated；
The wafer after heat treatment is performed etching into processing.
2. wafer processing method as described in claim 1, which is characterized in that the metallic pollution includes copper, titanium, chromium, molybdenum, tungsten
Or it is one or more in nickel.
3. wafer processing method as described in claim 1, which is characterized in that the solution that the wet processing uses includes hydrogen-oxygen
Change ammonium and hydrogen peroxide.
4. wafer processing method as described in claim 1, which is characterized in that the temperature of the heat treatment is 150 DEG C~600
℃。
5. wafer processing method as described in claim 1 or 4, which is characterized in that the gaseous environment of the heat treatment is nitrogen.
6. wafer processing method as described in claim 1 or 4, which is characterized in that the time of the heat treatment is 2 hours~5
Hour.
7. the wafer processing method as described in any one of Claims 1-4, which is characterized in that the etching processing is wet
Method etches.
8. wafer processing method as claimed in claim 7, which is characterized in that the solution that the wet etching uses includes nitric acid
With hydrofluoric acid；Alternatively, the solution used includes potassium hydroxide and b propanol.
9. wafer processing method as claimed in claim 7, which is characterized in that the etching processing etch away thickness 1um with
The wafer after interior heat treatment.
10. the wafer processing method as described in any one of Claims 1-4, which is characterized in that the wafer processing method
Further include：Tenor test is carried out to the wafer after etching processing.
11. wafer processing method as claimed in claim 10, which is characterized in that by microwave photoconductive decay test to etching
Treated, and the wafer carries out tenor test.
12. wafer processing method as claimed in claim 10, which is characterized in that the microwave photoconductive decay, which is tested, includes：
When the wafer is n-type doping, the testing time is in 1000uS or more；Alternatively, when the wafer is p-type doping, the testing time exists
100uS or more.
13. wafer processing method as claimed in claim 10, which is characterized in that Miller is pressed in the microwave photoconductive decay test
The wafer after exponent pair etching processing is tested.
14. wafer processing method as claimed in claim 10, which is characterized in that the wafer processing method further includes：Again
It carries out the heat treatment and carries out the etching processing again.
15. the wafer processing method as described in any one of Claims 1-4, which is characterized in that the wafer processing method
Further include：The surface of the wafer after etching processing is subjected to oxidation processes and forms silicon oxide layer.
16. wafer processing method as claimed in claim 14, which is characterized in that form the process conditions packet of the silicon oxide layer
It includes：Under oxygen and ar gas environment, temperature is 700 DEG C~1000 DEG C.
17. wafer processing method as claimed in claim 14, which is characterized in that the thickness of the silicon oxide layer 50nm with
It is interior.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710254307.8A CN108735575A (en) | 2017-04-18 | 2017-04-18 | Wafer processing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710254307.8A CN108735575A (en) | 2017-04-18 | 2017-04-18 | Wafer processing method |
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| CN108735575A true CN108735575A (en) | 2018-11-02 |
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| CN201710254307.8A Pending CN108735575A (en) | 2017-04-18 | 2017-04-18 | Wafer processing method |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1261459A (en) * | 1997-05-29 | 2000-07-26 | Memc电子材料有限公司 | Process for the removed of copper and other metallic impurities from silicon |
| CN1350700A (en) * | 1998-07-17 | 2002-05-22 | Memc电子材料有限公司 | Process for mapping metal contaminant concentration on a silicon wafer surface |
| US20030104680A1 (en) * | 2001-11-13 | 2003-06-05 | Memc Electronic Materials, Inc. | Process for the removal of copper from polished boron-doped silicon wafers |
| JP2010040813A (en) * | 2008-08-06 | 2010-02-18 | Shin Etsu Handotai Co Ltd | Method of evaluating silicon substrate, method of detecting contamination, and method of manufacturing epitaxial substrate |
| CN103013711A (en) * | 2013-01-15 | 2013-04-03 | 常州比太科技有限公司 | Cleaning solution and cleaning process for removing metal ion contamination of crystalline silicon wafer |
-
2017
- 2017-04-18 CN CN201710254307.8A patent/CN108735575A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1261459A (en) * | 1997-05-29 | 2000-07-26 | Memc电子材料有限公司 | Process for the removed of copper and other metallic impurities from silicon |
| CN1350700A (en) * | 1998-07-17 | 2002-05-22 | Memc电子材料有限公司 | Process for mapping metal contaminant concentration on a silicon wafer surface |
| US20030104680A1 (en) * | 2001-11-13 | 2003-06-05 | Memc Electronic Materials, Inc. | Process for the removal of copper from polished boron-doped silicon wafers |
| JP2010040813A (en) * | 2008-08-06 | 2010-02-18 | Shin Etsu Handotai Co Ltd | Method of evaluating silicon substrate, method of detecting contamination, and method of manufacturing epitaxial substrate |
| CN103013711A (en) * | 2013-01-15 | 2013-04-03 | 常州比太科技有限公司 | Cleaning solution and cleaning process for removing metal ion contamination of crystalline silicon wafer |
Non-Patent Citations (2)
| Title |
|---|
| 杨树人，丁墨元编著: "《外延生长技术》", 31 July 1992 * |
| 阙端麟主编；陈修治副主编: "《硅材料科学与技术》", 31 December 2000 * |
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