CN1754860A - A kind of silicide process that is applicable to that nano-device is made - Google Patents
A kind of silicide process that is applicable to that nano-device is made Download PDFInfo
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- CN1754860A CN1754860A CN 200410080409 CN200410080409A CN1754860A CN 1754860 A CN1754860 A CN 1754860A CN 200410080409 CN200410080409 CN 200410080409 CN 200410080409 A CN200410080409 A CN 200410080409A CN 1754860 A CN1754860 A CN 1754860A
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CNB2004100804095A CN1296971C (en) | 2004-09-29 | 2004-09-29 | Silicide process suitable for nanometer article manufacture |
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CNB2004100804095A CN1296971C (en) | 2004-09-29 | 2004-09-29 | Silicide process suitable for nanometer article manufacture |
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CN1754860A true CN1754860A (en) | 2006-04-05 |
CN1296971C CN1296971C (en) | 2007-01-24 |
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CNB2004100804095A Expired - Fee Related CN1296971C (en) | 2004-09-29 | 2004-09-29 | Silicide process suitable for nanometer article manufacture |
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CN (1) | CN1296971C (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102403211A (en) * | 2010-09-17 | 2012-04-04 | 中芯国际集成电路制造(上海)有限公司 | Preparation method for metal silicide |
CN102437034A (en) * | 2011-08-17 | 2012-05-02 | 上海华力微电子有限公司 | Method for forming nickel silicide blocking layer |
CN102446744A (en) * | 2011-10-12 | 2012-05-09 | 上海华力微电子有限公司 | Method for removing excessive nickel after formation of nickel silicide |
CN105097472A (en) * | 2015-07-30 | 2015-11-25 | 上海华力微电子有限公司 | Method for reducing nickel erosion |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR920005242A (en) * | 1990-08-20 | 1992-03-28 | 김광호 | Method of manufacturing transistor having structure of gate-insulator-semiconductor |
JPH11233732A (en) * | 1998-02-13 | 1999-08-27 | Toshiba Corp | Thin film capacitor |
KR100562710B1 (en) * | 2000-02-26 | 2006-03-23 | 삼성전자주식회사 | Method for manufacturing a semiconductor device |
CN1144266C (en) * | 2000-12-19 | 2004-03-31 | 中国科学院微电子中心 | Titanium silicide method using amorphous pre-injection of Ge or Sb and washing |
CN1134045C (en) * | 2000-12-19 | 2004-01-07 | 中国科学院微电子中心 | Auto-aligning method for Co to silicide |
-
2004
- 2004-09-29 CN CNB2004100804095A patent/CN1296971C/en not_active Expired - Fee Related
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102403211A (en) * | 2010-09-17 | 2012-04-04 | 中芯国际集成电路制造(上海)有限公司 | Preparation method for metal silicide |
CN102403211B (en) * | 2010-09-17 | 2015-05-20 | 中芯国际集成电路制造(北京)有限公司 | Preparation method for metal silicide |
CN102437034A (en) * | 2011-08-17 | 2012-05-02 | 上海华力微电子有限公司 | Method for forming nickel silicide blocking layer |
CN102446744A (en) * | 2011-10-12 | 2012-05-09 | 上海华力微电子有限公司 | Method for removing excessive nickel after formation of nickel silicide |
CN105097472A (en) * | 2015-07-30 | 2015-11-25 | 上海华力微电子有限公司 | Method for reducing nickel erosion |
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Publication number | Publication date |
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CN1296971C (en) | 2007-01-24 |
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Owner name: INST OF MICROELECTRONICS, C. A. S Effective date: 20130419 Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHA Free format text: FORMER OWNER: INST OF MICROELECTRONICS, C. A. S Effective date: 20130419 |
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Free format text: CORRECT: ADDRESS; FROM: 100029 CHAOYANG, BEIJING TO: 201203 PUDONG NEW AREA, SHANGHAI |
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Effective date of registration: 20130419 Address after: 201203 Shanghai SMIC international integrated circuit manufacturing (Shanghai) Co., Ltd. Patentee after: Semiconductor Manufacturing International (Shanghai) Corporation Patentee after: Institute of Microelectronics, Chinese Academy of Sciences Address before: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3 Patentee before: Institute of Microelectronics, Chinese Academy of Sciences |
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20070124 Termination date: 20180929 |
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CF01 | Termination of patent right due to non-payment of annual fee |