CN1745571A - 具有改善的彩色响应的cmos成像器 - Google Patents
具有改善的彩色响应的cmos成像器 Download PDFInfo
- Publication number
- CN1745571A CN1745571A CNA2003801092886A CN200380109288A CN1745571A CN 1745571 A CN1745571 A CN 1745571A CN A2003801092886 A CNA2003801092886 A CN A2003801092886A CN 200380109288 A CN200380109288 A CN 200380109288A CN 1745571 A CN1745571 A CN 1745571A
- Authority
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- China
- Prior art keywords
- pixel
- capacitor
- region
- doped
- photoelectric sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000004044 response Effects 0.000 title claims description 3
- 239000003990 capacitor Substances 0.000 claims abstract description 137
- 238000001514 detection method Methods 0.000 claims description 30
- 238000003384 imaging method Methods 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 12
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical group [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 230000006872 improvement Effects 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- 230000004888 barrier function Effects 0.000 claims 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 2
- 239000002019 doping agent Substances 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 description 15
- 238000007667 floating Methods 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 12
- 238000010586 diagram Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 241000220010 Rhode Species 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 3
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- 239000003550 marker Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000013144 data compression Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
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- 239000011159 matrix material Substances 0.000 description 1
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- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N3/00—Scanning details of television systems; Combination thereof with generation of supply voltages
- H04N3/10—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical
- H04N3/14—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices
- H04N3/15—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation
- H04N3/155—Control of the image-sensor operation, e.g. image processing within the image-sensor
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/80—Camera processing pipelines; Components thereof
- H04N23/84—Camera processing pipelines; Components thereof for processing colour signals
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/57—Control of the dynamic range
- H04N25/58—Control of the dynamic range involving two or more exposures
- H04N25/581—Control of the dynamic range involving two or more exposures acquired simultaneously
- H04N25/585—Control of the dynamic range involving two or more exposures acquired simultaneously with pixels having different sensitivities within the sensor, e.g. fast or slow pixels or pixels having different sizes
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/57—Control of the dynamic range
- H04N25/59—Control of the dynamic range by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
- H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
- H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
- H04N25/134—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on three different wavelength filter elements
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Color Television Image Signal Generators (AREA)
Abstract
Description
Claims (58)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/305,075 US6903394B2 (en) | 2002-11-27 | 2002-11-27 | CMOS imager with improved color response |
US10/305,075 | 2002-11-27 | ||
PCT/US2003/037466 WO2004051980A1 (en) | 2002-11-27 | 2003-11-25 | Cmos imager with improved color response |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1745571A true CN1745571A (zh) | 2006-03-08 |
CN1745571B CN1745571B (zh) | 2010-07-28 |
Family
ID=32325364
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2003801092886A Expired - Fee Related CN1745571B (zh) | 2002-11-27 | 2003-11-25 | 具有改善的彩色响应的cmos成像器 |
Country Status (7)
Country | Link |
---|---|
US (2) | US6903394B2 (zh) |
EP (1) | EP1574042A1 (zh) |
JP (1) | JP2006509353A (zh) |
KR (1) | KR100694761B1 (zh) |
CN (1) | CN1745571B (zh) |
AU (1) | AU2003295837A1 (zh) |
WO (1) | WO2004051980A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101841635A (zh) * | 2009-03-18 | 2010-09-22 | 索尼公司 | 固体成像设备、其驱动方法和电子装置 |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7443427B2 (en) * | 2002-08-23 | 2008-10-28 | Micron Technology, Inc. | Wide dynamic range linear-and-log active pixel |
US6780666B1 (en) * | 2003-08-07 | 2004-08-24 | Micron Technology, Inc. | Imager photo diode capacitor structure with reduced process variation sensitivity |
JP4075773B2 (ja) | 2003-11-05 | 2008-04-16 | ソニー株式会社 | 固体撮像装置 |
US20060103749A1 (en) * | 2004-11-12 | 2006-05-18 | Xinping He | Image sensor and pixel that has switchable capacitance at the floating node |
KR100682829B1 (ko) * | 2005-05-18 | 2007-02-15 | 삼성전자주식회사 | 씨모스 이미지 센서의 단위 픽셀, 픽셀 어레이 및 이를포함한 씨모스 이미지 센서 |
KR100787938B1 (ko) | 2005-07-15 | 2007-12-24 | 삼성전자주식회사 | 공유 능동 화소 센서 구조의 씨모스 이미지 센서 및 그구동 방법 |
US7804117B2 (en) * | 2005-08-24 | 2010-09-28 | Aptina Imaging Corporation | Capacitor over red pixel |
US7619671B2 (en) * | 2006-07-18 | 2009-11-17 | Aptina Imaging Corporation | Method, apparatus and system for charge injection suppression in active pixel sensors |
US7649559B2 (en) * | 2006-08-30 | 2010-01-19 | Aptina Imaging Corporation | Amplifier offset cancellation devices, systems, and methods |
KR100922931B1 (ko) * | 2006-12-27 | 2009-10-22 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서 및 그 제조 방법 |
JP2008205638A (ja) * | 2007-02-16 | 2008-09-04 | Texas Instr Japan Ltd | 固体撮像装置及びその動作方法 |
US20090184638A1 (en) * | 2008-01-22 | 2009-07-23 | Micron Technology, Inc. | Field emitter image sensor devices, systems, and methods |
JP5215681B2 (ja) * | 2008-01-28 | 2013-06-19 | キヤノン株式会社 | 撮像装置及び撮像システム |
JP5511541B2 (ja) * | 2010-06-24 | 2014-06-04 | キヤノン株式会社 | 固体撮像装置及び固体撮像装置の駆動方法 |
US9103724B2 (en) * | 2010-11-30 | 2015-08-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising photosensor comprising oxide semiconductor, method for driving the semiconductor device, method for driving the photosensor, and electronic device |
US8878264B2 (en) * | 2011-04-26 | 2014-11-04 | Aptina Imaging Corporation | Global shutter pixel with improved efficiency |
US9967501B2 (en) | 2014-10-08 | 2018-05-08 | Panasonic Intellectual Property Management Co., Ltd. | Imaging device |
US9819882B2 (en) * | 2015-06-05 | 2017-11-14 | Caeleste Cvba | Global shutter high dynamic range sensor |
JP6782431B2 (ja) | 2016-01-22 | 2020-11-11 | パナソニックIpマネジメント株式会社 | 撮像装置 |
CN112788224B (zh) | 2016-01-29 | 2023-04-04 | 松下知识产权经营株式会社 | 摄像装置 |
JP7228849B2 (ja) | 2018-04-04 | 2023-02-27 | パナソニックIpマネジメント株式会社 | 電子デバイス及びその製造方法 |
Family Cites Families (39)
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DE2901303C2 (de) | 1979-01-15 | 1984-04-19 | Max Planck Gesellschaft Zur Foerderung Der Wissenschaften E.V., 3400 Goettingen | Festes Ionenleitermaterial, seine Verwendung und Verfahren zu dessen Herstellung |
US4316946A (en) | 1979-12-03 | 1982-02-23 | Ionomet Company, Inc. | Surface sensitized chalcogenide product and process for making and using the same |
US4671618A (en) | 1986-05-22 | 1987-06-09 | Wu Bao Gang | Liquid crystalline-plastic material having submillisecond switch times and extended memory |
US4800526A (en) | 1987-05-08 | 1989-01-24 | Gaf Corporation | Memory element for information storage and retrieval system and associated process |
US4942459A (en) * | 1988-05-12 | 1990-07-17 | Canon Kabushiki Kaisha | Color temperature detecting device for producing a color temperature signal developed using the ratio between color component signals |
US5272359A (en) | 1988-04-07 | 1993-12-21 | California Institute Of Technology | Reversible non-volatile switch based on a TCNQ charge transfer complex |
US5314772A (en) | 1990-10-09 | 1994-05-24 | Arizona Board Of Regents | High resolution, multi-layer resist for microlithography and method therefor |
US5754229A (en) * | 1995-11-14 | 1998-05-19 | Lockheed Martin Corporation | Electronic image sensor with multiple, sequential or staggered exposure capability for color snap shot cameras and other high speed applications |
JPH09260627A (ja) * | 1996-03-18 | 1997-10-03 | Sharp Corp | 増幅型固体撮像装置 |
US5880777A (en) * | 1996-04-15 | 1999-03-09 | Massachusetts Institute Of Technology | Low-light-level imaging and image processing |
US5798745A (en) * | 1996-09-30 | 1998-08-25 | Rockwell International | LCD panel having tailored pushdown voltages |
DE59708194D1 (de) * | 1996-10-31 | 2002-10-17 | Markus Boehm | Farbbildsensor für kurzzeitbelichtung |
US6005619A (en) | 1997-10-06 | 1999-12-21 | Photobit Corporation | Quantum efficiency improvements in active pixel sensors |
US6369853B1 (en) | 1997-11-13 | 2002-04-09 | Foveon, Inc. | Intra-pixel frame storage element, array, and electronic shutter method suitable for electronic still camera applications |
ATE274744T1 (de) | 1997-12-04 | 2004-09-15 | Axon Technologies Corp | Programmierbare aggregierende unterflächenmetallisierungsstruktur |
US6452633B1 (en) | 1998-02-26 | 2002-09-17 | Foveon, Inc. | Exposure control in electronic cameras by detecting overflow from active pixels |
US6137100A (en) | 1998-06-08 | 2000-10-24 | Photobit Corporation | CMOS image sensor with different pixel sizes for different colors |
US6097022A (en) | 1998-06-17 | 2000-08-01 | Foveon, Inc. | Active pixel sensor with bootstrap amplification |
US6410899B1 (en) | 1998-06-17 | 2002-06-25 | Foveon, Inc. | Active pixel sensor with bootstrap amplification and reduced leakage during readout |
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-
2002
- 2002-11-27 US US10/305,075 patent/US6903394B2/en not_active Expired - Lifetime
-
2003
- 2003-11-25 JP JP2004557264A patent/JP2006509353A/ja active Pending
- 2003-11-25 AU AU2003295837A patent/AU2003295837A1/en not_active Abandoned
- 2003-11-25 CN CN2003801092886A patent/CN1745571B/zh not_active Expired - Fee Related
- 2003-11-25 WO PCT/US2003/037466 patent/WO2004051980A1/en active Application Filing
- 2003-11-25 KR KR1020057009488A patent/KR100694761B1/ko active IP Right Grant
- 2003-11-25 EP EP03787048A patent/EP1574042A1/en not_active Ceased
-
2004
- 2004-01-23 US US10/762,299 patent/US6974718B2/en not_active Expired - Lifetime
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101841635A (zh) * | 2009-03-18 | 2010-09-22 | 索尼公司 | 固体成像设备、其驱动方法和电子装置 |
CN101841635B (zh) * | 2009-03-18 | 2013-02-20 | 索尼公司 | 固体成像设备、其驱动方法和电子装置 |
Also Published As
Publication number | Publication date |
---|---|
US6974718B2 (en) | 2005-12-13 |
CN1745571B (zh) | 2010-07-28 |
US20040149887A1 (en) | 2004-08-05 |
JP2006509353A (ja) | 2006-03-16 |
EP1574042A1 (en) | 2005-09-14 |
AU2003295837A1 (en) | 2004-06-23 |
US6903394B2 (en) | 2005-06-07 |
US20040099892A1 (en) | 2004-05-27 |
KR100694761B1 (ko) | 2007-03-13 |
WO2004051980A1 (en) | 2004-06-17 |
KR20050086854A (ko) | 2005-08-30 |
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C06 | Publication | ||
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C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: APTINA DIGITAL IMAGING HOLDINGS INC. Free format text: FORMER OWNER: MICROMETER TECHNOLOGY CO., LTD. Effective date: 20100525 |
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Free format text: CORRECT: ADDRESS; FROM: IDAHO, U.S.A. TO: CAYMAN ISLANDS |
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Effective date of registration: 20100525 Address after: Cayman Islands Applicant after: Micron Technology Inc. Address before: Idaho Applicant before: Micron Technology, INC. |
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Granted publication date: 20100728 Termination date: 20201125 |