CN1687698A - Online measuring structure of residual strain of polysilicon film and testing method - Google Patents
Online measuring structure of residual strain of polysilicon film and testing method Download PDFInfo
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- CN1687698A CN1687698A CN 200510039283 CN200510039283A CN1687698A CN 1687698 A CN1687698 A CN 1687698A CN 200510039283 CN200510039283 CN 200510039283 CN 200510039283 A CN200510039283 A CN 200510039283A CN 1687698 A CN1687698 A CN 1687698A
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Abstract
The invention is the online detecting structure and method of polysilicon film residue deformation. The detecting structure comprises the first curved girder, the second curved girder, the third curved girder, the primary pressure welding block, the second pressure welding block, the third pressure welding block and the fourth pressure welding block. The three polysilicon curved girders parallel with each other; the contactors are at the two sides of the central point of the girders and the space between the contactors is equal. The two ends of the first curved girder separately connect the primary and the forth pressure welding blocks; the two ends of the second girder separately connect the second and the forth pressure welding blocks; the two ends of the third girder connect the third and the forth pressure welding blocks. The invention has fast detecting speed and low requirement for the detected equipment.
Description
Technical field
The present invention is based on the online detection architecture of the residual strain of polysilicon film of surface processing technique, belongs to the technical field of microelectromechanical systems (MEMS) technological parameter test.
Background technology
Polysilicon is at integrated circuit (IC) industry and microelectron-mechanical (Micro Electro MechanicalSystem, be called for short MEMS) in all is a kind of very important material, be successfully used to make micro mechanical structure, integrated electricity interlinkage, hot coupling, p-n junction diode and other has the electron device of micro mechanical structure.Surface-micromachining process based on polysilicon has now become a very important flat thin device manufacturing technology.To the research of polycrystalline silicon film material parameter from the development of integrated circuits initial stage just, but mostly to the research of polysilicon membrane in the past are preparation technology and electrology characteristics of paying close attention to it.For MEMS, the mechanical material parameter of polysilicon membrane also merits attention very much, and wherein the overstrain of film is exactly a very important mechanical parameter.
The overstrain that the preparation process of polysilicon membrane is introduced can cause being deformed after sacrifice layer discharges by the microstructure of polysilicon structure, even warpage, and excessive overstrain also can cause the damage of microstructure.Overstrain in the microstructure can also have influence on the resonance frequency of device, overstrain and piezoresistive effect are in conjunction with the change in resistance that can cause polysilicon, so the overstrain of polysilicon membrane is very big to the performance impact of MEMS device, the overstrain that must control film in the manufacture craft process just can be produced the MEMS device of estimated performance.Therefore, accurate overstrain measurement is very important for the process of optimizing polysilicon.Can in time grasp the overstrain of film, be vital for performance during monitoring device manufacturing process, the analysis.
The method of testing that several residual strain of polysilicon film based on the MEMS technology had been arranged before the present invention.Yet always more or less there are some following problems in these method of testings, make them be unfavorable for the online detection of film overstrain.For example, a part of method of testing adopts laser interference test or nano-hardness tester, but these testing tools all have very high Costco Wholesale; Some method of testing only needs common microscope, but needs the manual observation of staff to calculate, at the bottom of the efficiency of measurement.Generally speaking, the shortcoming of existing method of testing is mainly: need special testing tool, can not utilize existing integrated circuit testing equipment; The manually-operated action is many, and test speed is slow, is not suitable for large batch of commercial production test request; Do not use electrical quantities to measure, thereby be difficult to after encapsulation, detect again, promptly can not provide real-time on-line measurement.
Summary of the invention
Technical matters: the object of the present invention is to provide a kind of online detection architecture and the detection method that can process residual strain of polysilicon film at test surfaces under the physical environment, can realize the purpose of the required technological parameter of monitoring device manufacturing process.
Technical scheme: the online detection architecture of residual strain of polysilicon film of the present invention is characterized in that this test structure is that promptly first press welding block, second press welding block, the 3rd press welding block, the 4th press welding block are formed for first camber beam, second camber beam, the 3rd camber beam and four press welding blocks by three polysilicon camber beams; These three polysilicon camber beams are arranged in parallel, and are respectively equipped with the contact on the two sides of the intermediate point of these three polysilicon camber beams, and the spacing between each contact equates; The two ends of first camber beam connect first press welding block and the 4th press welding block respectively, and the two ends of second camber beam connect second press welding block and the 4th press welding block respectively, and the two ends of the 3rd camber beam connect the 3rd press welding block and the 4th press welding block respectively.On the contact of the centre of each camber beam, all be coated with metallic film, promptly be coated with metallic film on the first camber beam metal membrane, first camber beam respectively in the both sides of first camber beam, be coated with metallic film on the second camber beam metal membrane, second camber beam respectively in the both sides of second camber beam, be coated with metallic film on the 3rd camber beam metal membrane, the 3rd camber beam respectively in the both sides of the 3rd camber beam.The process layer of this detection architecture is made of from bottom to top silicon substrate, silicon dioxide layer, silicon nitride layer, polysilicon layer, aluminum lead layer.
The online test method of the online detection architecture of residual strain of polysilicon film of the present invention is, the 4th press welding block remains at zero potential, at first apply the voltage that increases gradually to first press welding block, the Joule heat that the electric current that first press welding block is applied produces can make the temperature of first camber beam rise, and because thermal expansion effects and close to second camber beam, finally contact with second camber beam, cause current potential on second press welding block suddenly by about half of zero saltus step to the first press welding block current potential, note the electric current and voltage value of first press welding block when the second press welding block jump in potential; Remove the voltage on first press welding block, then second press welding block is applied the voltage that progressively increases, and note the electric current and voltage value of being imported when second press welding block has jump in potential on the 3rd press welding block; By the test data of these two groups of voltage and current values being brought into according to Engineering Thermodynamics theory and structural mechanics redundant force is the test model that method for solving is derived, and calculates the overstrain of polysilicon membrane.
Beneficial effect: advantage of the present invention is: manufacturing process and test structure are comparatively simple; Method of testing is simple, and measuring accuracy is higher, and independence is better, does not need to know other polycrystalline silicon film material parameter; Test can be carried out under physical environment, and test speed is fast, and lower to the requirement of measuring equipment; The test signal that applies and detect all is an electrical quantities, can realize online detection.
Description of drawings
Fig. 1 is the synoptic diagram (top view) of test structure in the embodiment of the invention,
Fig. 2 is the synoptic diagram (front view) of test structure in the embodiment of the invention,
Among the above figure first camber beam 101, second camber beam 102, the 3rd camber beam 103, the 4th press welding block 104, first press welding block 105, second press welding block 106, the 3rd press welding block 107, silicon substrate 201, silicon dioxide layer 202, silicon nitride layer 203, polysilicon layer 204, aluminum lead layer 205 are arranged.
Embodiment
The present invention is a kind of online detection architecture of the residual strain of polysilicon film based on surface processing technique, this test structure by three polysilicon camber beams promptly first camber beam 101, second camber beam 102, the 3rd camber beam 103 and four press welding blocks promptly first press welding block 105, second press welding block 106, the 3rd press welding block 107, the 4th press welding block 104 are formed; These three polysilicon camber beams are arranged in parallel, and are respectively equipped with the contact on the two sides of the intermediate point of these three polysilicon camber beams, and the spacing between each contact equates; The two ends that the two ends that the two ends of first camber beam 101 connect first press welding block 105 and the 4th press welding block 104, the second camber beams 102 respectively connect second press welding block 106 and the 4th press welding block 104, the three camber beams 103 respectively connect the 3rd press welding block 107 and the 4th press welding block 104 respectively.In order to allow adjacent camber beam structure that reasonable electricity contact can be arranged, the centre of each camber beam all is coated with metallic film, promptly be coated with metallic film 109 on the first camber beam metal membrane 108, first camber beam respectively in the both sides of first camber beam 101, be coated with metallic film 111 on the second camber beam metal membrane 110, second camber beam respectively in the both sides of second camber beam 102, be coated with metallic film 113 on the 3rd camber beam metal membrane 112, the 3rd camber beam respectively in the both sides of the 3rd camber beam 103.
The process layer of this detection architecture is made of from bottom to top silicon substrate 201, silicon dioxide layer 202, silicon nitride layer 203, polysilicon layer 204, aluminum lead layer 205.
First camber beam 101 among Fig. 1, the physical dimension of second camber beam 102 are identical: thickness all is 2 μ m, and width all is 4 μ m, and span (between the two-end-point of camber beam apart from) all is 400 μ m, highly all is 15 μ m.The height of the 3rd camber beam 103 is 20 μ m, and the thickness of the 3rd camber beam 103, width, span are identical with thickness, width, the span of first camber beam 101.
The current potential of press welding block 104 remains zero potential in the whole process of measuring.
At first first press welding block 105 shown in Figure 1 is applied the voltage (ascending velocity of voltage is 10 millivolts of per seconds) that progressively increases, this voltage causes the electric current on polysilicon first camber beam 101 progressively to increase, the Joule heat that electric current produced also progressively rises the temperature of first camber beam 101, and the summit that thermal expansion effects can order about first camber beam 101 promptly on first camber beam metallic film 109 close to the second camber beam metal membrane 110, when the electric current on first camber beam 101 rises to certain current value (about 10mA), metallic film 109 will contact with the second camber beam metal membrane 110 on first camber beam, at this moment the current potential on second press welding block 106 can skip to half of first press welding block, 105 potential values suddenly from zero potential, notes magnitude of voltage (V1) and current value (I1) that first press welding block 105 is carved at this moment.
Remove the voltage on first press welding block 105;
Then second press welding block 106 is applied the voltage (ascending velocity of voltage is 10 millivolts of per seconds) that progressively increases, this voltage that progressively rises causes the electric current on polysilicon second camber beam 102 also progressively to increase, the temperature that the Joule heat that electric current produced makes second camber beam 102 also progressively rises, and the summit that thermal expansion effects can order about second camber beam 102 promptly on second camber beam metallic film 111 promptly the 3rd camber beam metal membrane 112 is close to the summit of the 3rd camber beam 103; When the electric current on second camber beam 102 rises to certain current value (about 11mA), metallic film 111 will contact with the 3rd camber beam metal membrane 112 on second camber beam, at this moment the current potential on the 3rd press welding block 107 can skip to half of pressing second welding block, 106 potential values from zero potential suddenly, notes magnitude of voltage (V2) and current value (I2) that second press welding block 106 is carved at this moment.
Remove the voltage on the press welding block 106;
Test process finishes.
By and structural mechanics redundant force theoretical according to Engineering Thermodynamics is the test model that method for solving is derived, and the physical dimension value of comprehensive two groups of test datas (V1, I1 and V2, I2) and test structure can calculate the overstrain of polysilicon membrane.
Claims (4)
1, a kind of online detection architecture of residual strain of polysilicon film is characterized in that this test structure is that promptly first press welding block (105), second press welding block (106), the 3rd press welding block (107), the 4th press welding block (104) are formed for first camber beam (101), second camber beam (102), the 3rd camber beam (103) and four press welding blocks by three polysilicon camber beams; These three polysilicon camber beams are arranged in parallel, and are respectively equipped with the contact on the two sides of the intermediate point of these three polysilicon camber beams, and the spacing between each contact equates; The two ends of first camber beam (101) connect first press welding block (105) and the 4th press welding block (104) respectively, the two ends of second camber beam (102) connect second press welding block (106) and the 4th press welding block (104) respectively, and the two ends of the 3rd camber beam (103) connect the 3rd press welding block (107) and the 4th press welding block (104) respectively.
2, the online detection architecture of residual strain of polysilicon film according to claim 1, it is characterized in that on the contact of the centre of each camber beam, all being coated with metallic film, promptly be coated with the first camber beam metal membrane (108) respectively in the both sides of first camber beam (101), metallic film on first camber beam (109), be coated with the second camber beam metal membrane (110) respectively in the both sides of second camber beam (102), metallic film on second camber beam (111) is coated with the 3rd camber beam metal membrane (112) respectively in the both sides of the 3rd camber beam (103), metallic film on the 3rd camber beam (113).
3, the online detection architecture of residual strain of polysilicon film according to claim 1 is characterized in that the process layer of this detection architecture is made of from bottom to top silicon substrate (201), silicon dioxide layer (202), silicon nitride layer (203), polysilicon layer (204), aluminum lead layer (205).
4, a kind of online test method of online detection architecture of residual strain of polysilicon film as claimed in claim 1, it is characterized in that in the test process, the 4th press welding block (104) remains at zero potential, at first apply the voltage that increases gradually to first press welding block (105), the Joule heat that the electric current that first press welding block (105) is applied produces can make the temperature of first camber beam (101) rise, and because thermal expansion effects and close to second camber beam (102), finally contact with second camber beam (102), cause current potential on second press welding block (106) suddenly by about half of zero saltus step to the first press welding block (105) current potential, note the electric current and voltage value of first press welding block (105) when second press welding block (106) jump in potential; Remove the voltage on first press welding block (105), then second press welding block (106) is applied the voltage that progressively increases, and note the electric current and voltage value of being imported when second press welding block (106) has jump in potential on the 3rd press welding block (107); By the test data of these two groups of voltage and current values being brought into according to Engineering Thermodynamics theory and structural mechanics redundant force is the test model that method for solving is derived, and calculates the overstrain of polysilicon membrane.
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2005100392831A CN100478646C (en) | 2005-05-13 | 2005-05-13 | Online measuring structure of residual strain of polysilicon film and testing method |
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| CNB2005100392831A CN100478646C (en) | 2005-05-13 | 2005-05-13 | Online measuring structure of residual strain of polysilicon film and testing method |
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| CN1687698A true CN1687698A (en) | 2005-10-26 |
| CN100478646C CN100478646C (en) | 2009-04-15 |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101900525A (en) * | 2010-07-08 | 2010-12-01 | 东南大学 | Measuring method of package thermal strain of radio frequency micro electromechanical system device |
| CN102479772A (en) * | 2010-11-30 | 2012-05-30 | 上海华虹Nec电子有限公司 | Test structure for monitoring source and drain polycrystalline silicon etching |
| CN102589965A (en) * | 2012-01-10 | 2012-07-18 | 东南大学 | On-line test structure for polycrystalline silicon Poisson ratio |
| WO2013102352A1 (en) * | 2012-01-06 | 2013-07-11 | 东南大学 | Online test structure for residual stress of polycrystalline silicon material |
| CN104034604A (en) * | 2014-06-03 | 2014-09-10 | 东南大学 | Structure for testing residual stress of thin film silicon material on insulating substrate |
| CN110987255A (en) * | 2019-12-04 | 2020-04-10 | 西安工业大学 | High-precision film stress online testing method and device |
-
2005
- 2005-05-13 CN CNB2005100392831A patent/CN100478646C/en not_active Expired - Fee Related
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101900525A (en) * | 2010-07-08 | 2010-12-01 | 东南大学 | Measuring method of package thermal strain of radio frequency micro electromechanical system device |
| CN101900525B (en) * | 2010-07-08 | 2012-01-18 | 东南大学 | Measuring method of package thermal strain of radio frequency micro electromechanical system device |
| CN102479772A (en) * | 2010-11-30 | 2012-05-30 | 上海华虹Nec电子有限公司 | Test structure for monitoring source and drain polycrystalline silicon etching |
| CN102479772B (en) * | 2010-11-30 | 2013-09-11 | 上海华虹Nec电子有限公司 | Test structure for monitoring source and drain polycrystalline silicon etching |
| WO2013102352A1 (en) * | 2012-01-06 | 2013-07-11 | 东南大学 | Online test structure for residual stress of polycrystalline silicon material |
| CN102589965A (en) * | 2012-01-10 | 2012-07-18 | 东南大学 | On-line test structure for polycrystalline silicon Poisson ratio |
| CN102589965B (en) * | 2012-01-10 | 2014-01-01 | 东南大学 | On-line test structure for polycrystalline silicon Poisson ratio |
| CN104034604A (en) * | 2014-06-03 | 2014-09-10 | 东南大学 | Structure for testing residual stress of thin film silicon material on insulating substrate |
| CN110987255A (en) * | 2019-12-04 | 2020-04-10 | 西安工业大学 | High-precision film stress online testing method and device |
| CN110987255B (en) * | 2019-12-04 | 2021-09-03 | 西安工业大学 | High-precision film stress online testing method and device |
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| CN100478646C (en) | 2009-04-15 |
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