CN103424293B - Measure the method for TSV copper column bending modulus and yield stress - Google Patents
Measure the method for TSV copper column bending modulus and yield stress Download PDFInfo
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Abstract
The present invention relates to microelectronic, disclose a kind of method measuring TSV copper column bending modulus and yield stress.In the present invention, the silicon chip of TSV copper column is buried in corrosion, until form TSV copper column cantilever beam structure; Selecting the TSV copper column for measuring bending modulus and yield stress, removing unnecessary TSV copper column, forming single or single TSV copper column; Apply transverse pressure on the top of the described TSV copper column for measuring, and record the horizontal applied pressure P of TSV copper column, TSV copper column are bent displacement δ, compression point is to the distance L of TSV copper column root; Data according to record calculate TSV copper column bending modulus and yield stress.Reach the effects such as sample preparation is simple, measuring accuracy is high, test simple and fast.
Description
Technical field
The present invention relates to microelectronic, particularly the crooked test technology of TSV electro-coppering post.
Background technology
Silicon through hole (ThroughSiliconVias is called for short " TSV ") is for the novel interconnect technology in high density microelectronics Packaging.This technology prepares micro through hole by being etched in silicon chip, can form the electrical connection of chip upper and lower surface.By TSV technology, can integrated heterogeneous chip, formation multi-chip rhythmo structure, increase solder joint density, substantially reduce interconnection length simultaneously, effectively reduce electric signal and postpone and power consumption.Utilize the packaging of TSV technology, the reliability of TSV structure is related to the reliability of whole device.The reliability of research TSV, obtains electro-coppering Mechanical Properties of Materials in TSV very important.The material property of electroplated copper film and the mechanical property of macroscopical copper product have obvious difference to have had experiment to confirm, the mechaanical property of materials of therefore directly testing electro-coppering in TSV is very necessary, is the key parameter carrying out calculating simulation.Because TSV size is small, generally between 5 ~ 200 microns, in-situ test has very large difficulty.
The method of the existing Mechanics Performance Testing for electro-coppering mainly nano impress, film stretching, and for TSV copper column carry out Compression and Expansion method.The method of nano impress prepares sample, operation all simply, but the impact that test result is subject to local is more remarkable; Sample prepared by the method for film stretching is electroplated copper film, its Forming Mechanism and TSV copper column variant, and non-immediate is for the test of TSV copper column.Application number be 201120401687.1 and 201110386375.2 patent stretching carried out to TSV copper column introduce, but sample preparation needs micro-machined support, and difficulty is higher, is unfavorable for quick test; Application number be 201210050952.5 patent improve the method, do not need micro-machined support, but sample is small, not easily, and the process of the termination that stretches may have influence on measuring accuracy in operation.In addition, application number be 201210247658.3 patent the method that TSV copper column carries out compression verification is introduced, the compression performance of TSV copper column can be measured, but need the stiff end preparing copper or nickel material.
Because TSV electro-coppering is cylindric, be around silicon, total becomes lamellar.When the silicon chip comprising TSV structure is subject to flecition, TSV copper column also produces bending, and the corresponding bending modulus of TSV electro-coppering post and yield stress are also the important parameters for reliability, finite element analysis.Therefore, to the bending modulus of TSV electro-coppering post and the measurement of yield stress most important.
But, current for the modulus of TSV copper column and the measurement of yield stress, have that sample preparation as above is complicated, complex operation or not high defect of measuring accuracy.
Summary of the invention
The object of the present invention is to provide a kind of method measuring TSV copper column bending modulus and yield stress, make the measurement of TSV copper column bending modulus and yield stress, the effects such as sample preparation is simple, measuring accuracy is high, test simple and fast can be reached.
For solving the problems of the technologies described above, the invention provides a kind of method measuring TSV copper column bending modulus and yield stress, comprising following steps:
The silicon chip of TSV copper column is buried in corrosion, until form TSV copper column cantilever beam structure;
Selecting the TSV copper column for measuring bending modulus and yield stress, removing unnecessary TSV copper column, forming single or single TSV copper column;
Apply transverse pressure on the top of the described TSV copper column for measuring, and record the horizontal applied pressure P of TSV copper column, TSV copper column are bent displacement δ, compression point is to the distance L of TSV copper column root;
According to pressure P, the displacement δ and distance L of described record, calculate TSV copper column bending modulus and yield stress.
Embodiment of the present invention in terms of existing technologies, buries the silicon chip of TSV copper column by corrosion, form TSV copper column cantilever beam structure.Apply pressure on the top of the TSV copper column for measuring, and record the horizontal applied pressure P of TSV copper column, TSV copper column are bent displacement δ, compression point is to the distance L of TSV copper column root.Utilize the pressure P of record, displacement δ and distance L, calculate TSV copper column bending modulus and yield stress.Due to can directly for actual production, the silicon chip that comprises TSV carries out sample preparation, prepare in-situ test sample fast, form semi-girder TSV electro-coppering post sample, and without the need to operating TSV copper column and shifting, or prepare special test bracket, sample preparation is simple, realizes TSV copper column and bends in-situ test.In addition, utilizing power---the relation of the physical dimension of displacement curve and TSV copper column, calculate bending modulus and yield stress, precision is high, test simple and fast.
In addition, applying on the top of the TSV copper column for measuring in the step of transverse pressure, adopting nano-hardness tester to apply pressure on the top of the described TSV copper column for measuring.Because nano-hardness tester is the existing testing apparatus through checking, therefore further ensure high precision and the agility of TSV copper column bending modulus and yield stress measurement.
In addition, nano-hardness tester, in the regime of elastic deformation of TSV copper column semi-girder, repeats laterally to exert pressure and release to the top of the TSV copper column for measuring; The displacement δ that the displacement δ that pressure P, the TSV copper column of record bend is pressure P at least twice course of exerting pressure, TSV copper column is bending.Effectively can eliminate the impact that nano-hardness tester indenter tip press-in TSV copper column causes displacement.
In addition, compression point is located according to the loading system of nano-hardness tester, or determines according to scanning electron microscope SEM photo, to ensure the accuracy of pressure head loading position.
In addition, according to following formulae discovery TSV copper column bending modulus E:
wherein, described I is the moment of inertia in the TSV copper column cross section relevant to TSV copper column diameter of section,
d is TSV copper column diameter of section; Described k is pressure P-displacement δ slope of a curve, k=P/ δ.Calculate bending modulus according to semi-girder bending formula, be not less than the condition of 5 in sample length-diameter ratio under, further ensure the calculating accuracy of bending modulus.
In addition, according to following formulae discovery yield stress σ
s:
wherein, M
cfor the moment of flexure size that TSV copper column root section bears, M
c=P
cl; Described I is the moment of inertia in the TSV copper column cross section relevant to TSV copper column diameter of section,
described d is TSV copper column diameter of section; Described P
cfor critical load when pressure P-displacement δ curve is non-linear by linear transition.When producing surrender owing to making copper post root when the power applied, power---displacement curve will no longer keep linear, by curve by linearly proceeding to nonlinear unique point, can determine the size of critical force.Therefore, according to its emergent pressure, calculate the yield value of stress of root, further ensure the calculating accuracy of yield stress.
In addition, bury in the step of the silicon chip of TSV copper column in corrosion, control the time of described corrosion, until be exposed to the length of the TSV copper column outside described silicon chip and diameter ratio is not less than 5, effectively can reduce test error.
Accompanying drawing explanation
Fig. 1 is the method flow diagram of measurement TSV copper column bending modulus according to first embodiment of the invention and yield stress;
Fig. 2 is according to the silicon chip structural representation grinding off the copper electroplating layer of silicon chip surface in first embodiment of the invention;
Fig. 3 is the silicon chip structural representation according to the formation TSV copper column cantilever beam structure in first embodiment of the invention;
Fig. 4 is the diagrammatic cross-section according to the single TSV copper column of the formation in first embodiment of the invention;
Fig. 5 is according to the TSV copper column cantilever bending test side schematic view in first embodiment of the invention.
In figure, numbering 1 is silicon materials, and numbering 2 is TSV copper column, and numbering 3 is copper sheet for firm banking or aluminium flake.
Embodiment
For making the object, technical solutions and advantages of the present invention clearly, below in conjunction with accompanying drawing, the embodiments of the present invention are explained in detail.But, persons of ordinary skill in the art may appreciate that in each embodiment of the present invention, proposing many ins and outs to make reader understand the application better.But, even without these ins and outs with based on the many variations of following embodiment and amendment, each claim of the application technical scheme required for protection also can be realized.
First embodiment of the present invention relates to a kind of method measuring TSV copper column bending modulus and yield stress, and idiographic flow as shown in Figure 1.
In a step 101, grind off the copper electroplating layer of the silicon chip surface burying TSV copper column, the TSV copper column be embedded in silicon chip is revealed, as shown in Figure 2.If the silicon chip be thinned, as TSV copper column is exposed at silicon chip back side, then by pasting silicon chip or sheet metal formation sample form as shown in Figure 2 overleaf, then can enter step 102.
In a step 102, the silicon chip of TSV copper column is buried in corrosion, until form TSV copper column cantilever beam structure, as shown in Figure 3.
Specifically, can adopt concentration be 15% ~ 25% NaOH NaOH solution corrosion silicon chip as shown in Figure 2, wherein, corrosion temperature is 50 ° of C ~ 65 ° C.In the present embodiment, the concentration of NaOH solution is 20%, and corrosion temperature is 60 ° of C.In corrosion process, NaOH only works to silicon, and silicon wafer thickness and length and width direction size are all corroded reduction, through the regular hour, can obtain the sample form shown in Fig. 3.Now TSV electro-coppering post exposes, forms cantilever beam structure.In addition, it is worth mentioning that, for reducing metrical error further, the time of described corrosion can be controlled, until be exposed to the length of the TSV copper column outside silicon chip and diameter ratio is not less than 5.
Then, in step 103, selecting the TSV copper column for measuring bending modulus and yield stress, removing unnecessary TSV copper column, form single or single TSV copper column.Such as can length selected under the microscope straight, the TSV copper column that shape is good also removes unnecessary TSV copper column with tip metal tweezers, and form the single or single TSV copper column for measuring, the sectional view of single TSV copper column as shown in Figure 4.
Then, at step 104, apply transverse pressure on the top of the TSV copper column for measuring, and record the horizontal applied pressure P of TSV copper column, TSV copper column are bent displacement δ, compression point is to the distance L of TSV copper column root.In the present embodiment, nano-hardness tester is adopted to apply pressure on the top of the described TSV copper column for measuring.
Specifically, the silicon chip obtained in step 103 (i.e. sample) is fixed on scale copper or aluminium flake, nano-hardness tester is utilized to apply pressure at TSV copper column free end, the displacement δ that the horizontal applied pressure P of record TSV copper column, TSV copper column bend, compression point are to the distance L of TSV copper column root, as shown in Figure 5, the arrow in Fig. 5 represents force direction.
It is worth mentioning that, in this step, nano-hardness tester, in the regime of elastic deformation of TSV copper column semi-girder, repeats to exert pressure and release to the top of the TSV copper column for measuring.The displacement δ that the displacement δ that pressure P, the TSV copper column of record bend is pressure P at least twice course of exerting pressure, TSV copper column is bending.By repeating compression and decompression in TSV copper column semi-girder regime of elastic deformation, the power after unloading is added by twice---displacement curve, to determine the actual displacement of TSV copper column semi-girder load(ing) point, effectively can avoid the impact that nano-hardness tester indenter tip press-in TSV copper column causes displacement., can be located by nano-hardness tester loading system meanwhile, determine the accurate location that pressure head loads, to ensure the accuracy of pressure head loading position.According to pressure P, the displacement δ and distance L of record, can calculate TSV copper column bending modulus, concrete account form is described in detail below.
In addition, in the course of exerting pressure of nano-hardness tester, need the size continuing to increase loading force, until power---displacement curve no longer keeps linear, by curve by linearly proceeding to nonlinear unique point, can determine the size of critical force, for the calculating of follow-up yield stress, concrete account form is described in detail below.
Then, in step 105, by the power---the accurate location of displacement curve, pressure head and the numerical value of emergent pressure that obtain, binding isotherm and computational analysis, process experimental result, obtains bending modulus and the yield stress of TSV copper column.
Specifically, according to semi-girder theoretical analysis result, in elastic range, the relation between the displacement of its load(ing) point and applying power meets,
Wherein P is that L is the distance that compression point arrives TSV copper column root to TSV copper column horizontal applied pressure.E is bending modulus, and δ is the displacement that copper post is bending, and I is the moment of inertia in TSV copper column cross section, relevant with the diameter in cross section:
Therefore, for ease of process, (1) formula can be rewritten as:
Wherein k=P/ δ is elastic range power---the slope of displacement curve.By experiment obtain power---displacement curve obtains k by linear fit, add the numerical value measuring L and d, bring formula (3) into, can bending modulus E be obtained.In the present embodiment, calculate bending modulus according to semi-girder bending formula, further ensure the calculating accuracy of bending modulus.
Be understood that, after semi-girder is subject to load, the stress that its root is subject to is maximum, and therefore first root will enter mecystasis, makes capable thus---and displacement curve no longer keeps linear.Utilizing power---displacement curve, by the linear unique point to non-linear transformation, can obtain critical load.Critical load P
cunder effect, the stress of semi-girder root is yield stress, and the moment of flexure size that now semi-girder root section bears is M
c=P
cthe stress that L semi-girder root upper surface is subject to obtains by following formulae discovery:
Wherein, M
cfor the moment of flexure size that TSV copper column root section bears, M
c=P
cl.This stress is yield stress during beam deflection.According to emergent pressure, calculate the yield value of stress of root, further ensure the calculating accuracy of yield stress.
As mentioned above, in the present embodiment, to the TSV electro-coppering be embedded in silicon chip, appropriate corrosion of silicon, manifests most of TSV electro-coppering post, forms cantilever beam structure, then utilizes nano-hardness tester to apply pressure at copper capital end and tests.According to the power of nano-hardness tester record---displacement curve and the distance of compression point distance copper post root measured, calculate bending modulus according to semi-girder bending formula.When the power applied makes copper post root produce surrender, according to its emergent pressure, the yield value of stress of root can be calculated.Due to can directly for actual production, the silicon chip that comprises TSV carries out sample preparation, prepare in-situ test sample fast, form semi-girder TSV electro-coppering post sample, and without the need to operating TSV copper column and shifting, or prepare special test bracket, sample preparation is simple, realizes TSV copper column and bends in-situ test.In addition, utilizing power---the relation of the physical dimension of displacement curve and TSV copper column, calculates bending modulus and yield stress, and precision is very high, test simple and fast.
And, because nano-hardness tester has the testing apparatus through checking, therefore adopting nano-hardness tester to apply pressure on the top of the described TSV copper column for measuring, further ensuring high precision and the agility of TSV copper column bending modulus and yield stress measurement.
That is, utilize the method for present embodiment, in-situ test sample can be prepared fast, form semi-girder TSV electro-coppering post sample.Then utilize nano-hardness tester to test, precision is high, speed is fast.By power---the physical dimension of displacement curve and TSV copper column, can obtain bending modulus and yield stress by formula (3) and (4).Obtain main computational analysis parameter thus, carry out stress and the fail-safe analysis of TSV.
Second embodiment of the present invention relates to a kind of method measuring TSV copper column bending modulus and yield stress.Second embodiment is roughly the same with the first embodiment, and key distinction part is: in the first embodiment, is located by nano-hardness tester loading system, determines the accurate location that pressure head loads.And in second embodiment of the invention, the accurate location loaded by scanning electron microscope (SEM) photo determination pressure head, can ensure the accuracy of pressure head loading position equally.
In addition, it will be understood by those skilled in the art that in the first embodiment, adopt nano-hardness tester as the compression system to TSV copper column.And in the present embodiment, applying bending force can be undertaken by other suitable high precision loading systems, not necessarily nano-hardness tester.
In addition, in the first embodiment, the bending modulus of TSV copper column and yield stress are calculated by formula (3) and (4); And in the present embodiment, calculating modulus also can carry out with finite element method, do not repeat them here.
The step of various method divides above, just in order to be described clearly, can merge into a step or splitting some step, being decomposed into multiple step, when realizing as long as comprise identical logical relation, all in the protection domain of this patent; To adding inessential amendment in algorithm or in flow process or introducing inessential design, but the core design not changing its algorithm and flow process is all in the protection domain of this patent.
Persons of ordinary skill in the art may appreciate that the respective embodiments described above realize specific embodiments of the invention, and in actual applications, various change can be done to it in the form and details, and without departing from the spirit and scope of the present invention.
Claims (9)
1. measure a method for TSV copper column bending modulus and yield stress, it is characterized in that, comprise following steps:
The silicon chip of TSV copper column is buried in corrosion, until form TSV copper column cantilever beam structure, controls the time of described corrosion, until be exposed to the length of the TSV copper column outside described silicon chip and diameter ratio is not less than 5;
Selecting the TSV copper column for measuring bending modulus and yield stress, removing unnecessary TSV copper column, forming single or single TSV copper column;
Apply transverse pressure on the top of the described TSV copper column for measuring, and record the horizontal applied pressure P of TSV copper column, TSV copper column are bent displacement δ, compression point is to the distance L of TSV copper column root;
According to pressure P, the displacement δ and distance L of described record, calculate TSV copper column bending modulus and yield stress.
2. the method for measurement TSV copper column bending modulus according to claim 1 and yield stress, it is characterized in that, applying on the top of the described TSV copper column for measuring in the step of transverse pressure, adopting nano-hardness tester to apply transverse pressure on the top of the described TSV copper column for measuring.
3. the method for measurement TSV copper column bending modulus according to claim 2 and yield stress, is characterized in that, applies, in the step of transverse pressure, to comprise following sub-step on the top of the described TSV copper column for measuring:
Described nano-hardness tester, in the regime of elastic deformation of described TSV copper column semi-girder, repeats laterally to exert pressure and release to the top of the described TSV copper column for measuring;
The displacement δ that the displacement δ that the pressure P of described record, TSV copper column bend is pressure P at least twice course of exerting pressure, TSV copper column is bending.
4. the method for measurement TSV copper column bending modulus according to claim 2 and yield stress, is characterized in that,
Described compression point is located according to the loading system of described nano-hardness tester, or determines according to scanning electron microscope SEM photo.
5. the method for measurement TSV copper column bending modulus according to claim 1 and yield stress, it is characterized in that, at the pressure P according to described record, displacement δ and distance L, calculate in the step of TSV copper column bending modulus and yield stress, TSV copper column bending modulus E according to following formulae discovery:
Wherein, described I is the moment of inertia in the TSV copper column cross section relevant to TSV copper column diameter of section,
d is TSV copper column diameter of section; Described k is pressure P-displacement δ slope of a curve, k=P/ δ.
6. the method for measurement TSV copper column bending modulus according to claim 1 and yield stress, it is characterized in that, at the pressure P according to described record, displacement δ and distance L, calculate in the step of TSV copper column bending modulus and yield stress, yield stress σ according to following formulae discovery
s:
Wherein, M
cfor the moment of flexure size that TSV copper column root section bears, M
c=P
cl; Described I is the moment of inertia in the TSV copper column cross section relevant to TSV copper column diameter of section,
described d is TSV copper column diameter of section; Described P
cfor critical load when pressure P-displacement δ curve is non-linear by linear transition.
7. the method for measurement TSV copper column bending modulus according to any one of claim 1 to 6 and yield stress, it is characterized in that, after forming single or single TSV copper column, before the top of the described TSV copper column for measuring applies pressure, also comprise following steps:
Copper sheet or aluminium flake is adopted to fix described silicon chip.
8. the method for measurement TSV copper column bending modulus according to any one of claim 1 to 6 and yield stress, is characterized in that, also comprise following steps:
Bury the silicon chip of TSV copper column in described corrosion before, grind off the copper electroplating layer of described silicon chip surface.
9. the method for measurement TSV copper column bending modulus according to any one of claim 1 to 6 and yield stress, is characterized in that, buries the silicon chip of TSV copper column in described corrosion, until formed in the step of TSV copper column cantilever beam structure,
Adopt concentration be 15% ~ 25% NaOH NaOH solution corrode described silicon chip, wherein, corrosion temperature is 50 DEG C ~ 65 DEG C.
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| CN102944336A (en) * | 2012-11-15 | 2013-02-27 | 北京工业大学 | Test sample clamping and positioning device for measuring TSV (Temperature Safety Valve) electro-coppering residual stress |
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| CN102768148A (en) * | 2012-07-17 | 2012-11-07 | 上海交通大学 | In-situ compression sample for mechanical performance test of TSV (through silicon via) copper interconnection material |
| CN102944336A (en) * | 2012-11-15 | 2013-02-27 | 北京工业大学 | Test sample clamping and positioning device for measuring TSV (Temperature Safety Valve) electro-coppering residual stress |
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