CN102967510A - Method and apparatus for applying forces perpendicular to cantilever beam - Google Patents

Abstract

The invention relates to a method and an apparatus for applying forces perpendicular to a cantilever beam. The method comprises applying load force to an on-sheet mechanical microprobe with a curved-surface probe through a probe on a probe station; applying forces to the cantilever beam through the curved-surface probe by the on-sheet mechanical microprobe, and meanwhile rotating the on-sheet mechanical microprobe so that the forces to the cantilever beam are always perpendicular to the cantilever beam during a bending process. According to the invention, during the process of applying the forces to the detected cantilever beam, elastic forces in the direction of the cantilever beam are not generated, and frictional forces are either not generated; and due to a buffer effect of the mechanical microprobe, the application of the load force is relatively stable and the measure results are relatively accurate.

Description

A kind of method and device that applies perpendicular to the acting force of semi-girder

Technical field

The invention belongs to microelectromechanical systems (MEMS) mechanics parameter detection technique field, be specifically related to a kind of semi-girder is continuously applied method perpendicular to the load force of semi-girder, and the device that adopts the method, be applied in especially semi-girder is carried out crooked test, detection of broken intensity, reverse the field of bond strength.

Background technology

Since the nineties, microelectromechanical systems (MEMS) technology has entered the high speed development stage, is not only because concept is novel, and is because the MEMS device is compared with traditional devices, has miniaturization, integrated and prospect characteristics that performance is more excellent.Nowadays MEMS has been widely used in the fields such as automobile, Aero-Space, information control, medical science, biology.

But for this produced MEMS device of silicon technology that utilizes, along with the MEMS device is done more and more littlely, the size of microstructure enters micron dimension, the problems such as the absolute error in the silicon technology on the processing dimension, rough surface more and more can not be ignored to the impact that the mechanics parameters such as microstructure intensity, elastic modulus, rigidity, physical dimension bring.Need to revise accordingly this moment to analytical approach, the computing method of microstructure model, and the mechanics parameter that accurately extracts microstructure in these silicon technology process has just become inevitable Important Problems.

Semi-girder is as the simplest microstructure among the MEMS, and technique is very simple, and the other influences factor that need to control is fewer, is suitable as very much detection architecture, is used for extracting the individual event mechanical property parameters.When utilizing cantilever beam structure to carry out the mechanics parameter detection, usually need to carry out different crooked experiments to semi-girder, require in some cases in the whole BENDING PROCESS of semi-girder, suffered power is perpendicular to semi-girder all the time, for example measure anchor point (ANCHOR) by the mode of bending cantilever beam and locate torsional fracture intensity, if the acting force that semi-girder is suffered and non-perpendicular to semi-girder, then fracture is exactly that twisting action and tension and compression effect cause jointly, and the torsional fracture intensity that measures just is not to be real torsional fracture intensity.The classic method of carrying out this crooked experiment is to utilize the probe of probe station, but because the probe of probe station can only translation in measuring process, will inevitably be to the acting force (elastic force or force of sliding friction) of semi-girder generation along the semi-girder direction, the method that also has in addition some to utilize microprobe on the sheet to apply acting force (is compared the former, improved the double swerve of probe when doing translational motion of probe station), but because these probe design all is mainly take translation as main, keep away equally unavoidable generation along the acting force on the semi-girder direction, this measurement result to this moment has been brought inevitable inaccuracy.

Summary of the invention

By top analysis as can be known, in the acting force that need to be continuously applied semi-girder perpendicular to the semi-girder direction, existing method can produce elastic force or the force of sliding friction along the semi-girder direction usually, and this has brought inevitable uncertainty to measurement result.The objective of the invention is to propose a kind of method and device that is continuously applied perpendicular to the acting force of semi-girder, come the acting force of probe station probe is cushioned and break-in by microprobe on the sheet of appropriate design, thereby kept in whole semi-girder BENDING PROCESS, suffered acting force is perpendicular to semi-girder all the time.

For achieving the above object, the present invention adopts following technical scheme:

A kind of method that applies perpendicular to the acting force of semi-girder, its step comprises:

1) applies load force by probe station probe microprobe on the sheet with curved surface probe;

2) described upper microprobe applies acting force by the curved surface probe to semi-girder, simultaneously on this sheet microprobe rotate so that the acting force that this semi-girder is subject in BENDING PROCESS all the time perpendicular to this semi-girder.

Further, by single-ended semi-girder and the probe described upper microprobe that be composed of a fixed connection that admittedly prop up, described upper microprobe carries out described rotation around the described single-ended anchor point that admittedly props up semi-girder.

Further, the cross section of the pillar of described anchor point is rectangle.

A kind of device that applies perpendicular to the acting force of semi-girder, it comprises semi-girder, apply microprobe on the sheet of acting force on this semi-girder and microprobe applies load force on this sheet probe station probe; The probe of described upper microprobe is the curved surface form, and the forms of motion of described upper microprobe is for rotating.

Further, described upper microprobe comprises a single-ended semi-girder that admittedly props up that is fixedly connected with described probe, and described upper microprobe carries out described rotation around this single-ended anchor point that admittedly props up semi-girder.

Further, the cross section of the pillar of described anchor point is rectangle.

Further, on the sheet semi-girder length of microprobe greater than the length of tested semi-girder.

The present invention proposes and utilize microprobe on the sheet that the probe of probe station is cushioned thinking with break-in, namely by microprobe on the probe station probe actuation sheet, by microprobe on the sheet semi-girder is carried out direct output load power again.The benefit of this method is can the probe of probe station be cushioned, and improves and executes loaded stability; And this microprobe can change the direction of probe station probe acting force through reasonably design, can so that the suffered acting force of semi-girder all the time perpendicular to semi-girder.Compare with the existing method that semi-girder is applied the vertical direction load, the advantage of this method is:

The inventive method can not produce along the elastic force on the semi-girder direction in applying process, can not produce the friction force on any direction yet, make semi-girder suffered acting force in BENDING PROCESS be perpendicular to all the time semi-girder, and because the buffer action of microprobe, so that load force applies more stablely, reduce because the improper instant impact that brings of manual operation.So, measuring with pure when reversing relevant mechanics parameter, the result of measurement is just more accurate.

Description of drawings

Fig. 1 is the synoptic diagram perpendicular to the device of the acting force of semi-girder of applying of embodiment; Wherein: the single-ended semi-girder that admittedly props up of 1-; The tested semi-girder of 2-; The 3-probe; The width of microprobe on the W1-sheet; The width of the tested semi-girder of W2-; The length of the tested semi-girder of L1-; The length of microprobe on the L2-sheet; The spacing of microprobe and semi-girder on the W-sheet.

Fig. 2 is the probe vertical view of embodiment.

Fig. 3 is the anchor point synoptic diagram of embodiment.

Fig. 4 is the position vertical view of the different constantly probes of two of embodiment and beam.

Fig. 5 be embodiment apply the loading process synoptic diagram

Fig. 6 is the probe curved surface slope synoptic diagram of embodiment.

Fig. 7 is that the coordinate of embodiment is set up synoptic diagram.

Embodiment

Below by specific embodiment and cooperate accompanying drawing, the present invention is described in detail.

As shown in Figure 1, arrow locations is the application of force direction of probe station probe, by the microprobe after the appropriate design transmit, break-in, the semi-girder on the right is applied acting force.Among Fig. 1, the 1st, the single-ended semi-girder that admittedly props up, probe 3 are to carry on this semi-girder, consist of the microprobe system.This microprobe has two features: 1) probe is curved design, as shown in Figure 2; 2) motion of probe is rotation formula, and namely probe rotates around the anchor point of Fig. 1 left side beam.

Distortion for as shown in fig. 1 semi-girder comprises two parts: the one, and the torsional deflection of anchor point (ANCHOR); The 2nd, the bending of girder construction comprises single-ended admittedly the prop up bending of semi-girder 1 and the bending of tested semi-girder 2.Two processes can be divided to come and analyzed:

The anchor point pillar of present embodiment adopts the square-section, and as shown in Figure 3, the torsion angle in its twist process is:

$\mathrm{\δ}=\frac{\mathrm{Tl}}{{\mathrm{GI}}_t}=\frac{\mathrm{Tl}}{{\mathrm{G\βhb}}^3}---\left(1\right)$

Wherein G is modulus of shearing, I _tBe second polar moment of area, T is moment of torsion, and l is the height of ANCHOR, h is the length of ANCHOR, b is the wide of ANCHOR, and as shown in Figure 3, factor beta can obtain (relevant with h/b ratio) by query material Mechanical Data form " factor alpha during Rectangular Section Lever Torsion, β and γ ".

Sag equation and the equations of rotating angle of rectangular cross section beam are:

$y\left(x\right)=-\frac{{{\mathrm{Px}}_0}^2}{6\mathrm{EI}}[3L-x_0]---\left(2\right)$

$\mathrm{\θ}\left(x\right)=\frac{1}{\mathrm{EI}}({\mathrm{PLx}}_0-\frac{P}{2}{x_0}^2)$ (when θ is very little) (3)

Wherein P is the suffered acting force of back end (being the amount of force that middle probe of the present invention applies), x ₀For big or small along the position on the semi-girder direction, L is that (as shown in Figure 1, for the single-ended semi-girder 1 that admittedly props up, its beam length is L2 to beam length; For tested semi-girder 2, its beam length is L1), I is moment of inertia, E is elastic modulus.

Can obtain the deflection equation of the semi-girder with ANCHOR shown in Figure 1, the i.e. curvilinear equation of semi-girder profile in deformation process by simultaneous (1), (2), (3) equation.

The synoptic diagram of this microprobe when carrying out practical operation as shown in Figure 4, figure (a) be the location drawing of some moment probes and semi-girder, the A point is the application point of acting force between probe and the semi-girder at this moment; Figure (b) be next constantly location drawing of probe and semi-girder, and A1 and A2 are respectively the position of A point on probe and semi-girder, and at this moment between probe and the semi-girder application point of acting force be the B point.If will apply in the process of load force at probe, continue to keep the direction of acting force to be perpendicular to semi-girder, friction force is necessary for zero (under this structure situation, on non-perpendicular to the direction of beam, can there be elastic force), so camber line distance A 1B and camber line distance A 2B must equate, be that probe and semi-girder do not have relative sliding, namely do not have force of sliding friction.If any two moment (or any two different θ positions) all guarantee the camber line distance between two application points on probe and the semi-girder and equate, be not have relative sliding and tendency toward sliding between probe and the semi-girder, then apply in the loading process whole, semi-girder suffered acting force is perpendicular to semi-girder all the time.

Suppose that the load force that the tested semi-girder of t1 at a time is subject to is P, the application point of power is i.e. as shown in Figure 1 the L1 of L(to the length of semi-girder root), shown in Fig. 3 (a).Then the equations of rotating angle of this moment can get according to formula (1) (3):

${\mathrm{\θ}}^{\′}\left(x\right)=\frac{1}{\mathrm{EI}}({\mathrm{PLx}}_0-\frac{P}{2}{x_0}^2)+\frac{\mathrm{PLl}}{{\mathrm{G\βhb}}^3}---\left(4\right)$

Next constantly t2 load force be changed to △ P(and level off to infinitesimal), the application point of power levels off to infinitesimal to the length variations △ L(of semi-girder root), then equations of rotating angle is:

${\mathrm{\θ}}^{\′\′}\left(x\right)=\frac{1}{\mathrm{EI}}[(P+\mathrm{\ΔP})(L+\mathrm{\ΔL})x_0-\frac{(P+\mathrm{\ΔP})}{2}{x_0}^2]+\frac{(P+\mathrm{\ΔP})(L+\mathrm{\ΔL})l}{{\mathrm{G\βhb}}^3}---\left(5\right)$

X in following formula (4), (5) ₀Be the position on the semi-girder length.

In order to obtain coordinate figure, set up coordinate system (semi-girder is tested structure) as shown in Figure 7, wherein, initial point is arranged in Fig. 7 O point place, and the x axle is perpendicular to semi-girder, and the y axle is along the semi-girder direction, and the coordinate figure that can obtain the application point of power by (1) (2) formula is:

The t1 moment: $(x_1,y_1)=(L\&CenterDot;\sin [\frac{\mathrm{PLl}}{{\mathrm{G\&beta;<figure-callout\; id="3"\; label="hb"\; filenames="HDA00002274585500011.png"\; state="\{\{state\}\}">hb</figure-callout>}}^3}+\arctan \left(\frac{{\mathrm{PL}}^2}{3\mathrm{EI}}\right)],L\&CenterDot;\cos [\frac{\mathrm{PLl}}{{\mathrm{G\&beta;<figure-callout\; id="3"\; label="hb"\; filenames="HDA00002274585500011.png"\; state="\{\{state\}\}">hb</figure-callout>}}^3}+\arctan \left(\frac{{\mathrm{PL}}^2}{3\mathrm{EI}}\right)\left]\right)$

The t2 moment: $(x_2,y_2)=((L+\mathrm{\&Delta;L})\&CenterDot;\sin [\frac{(P+\mathrm{\&Delta;P})(L+\mathrm{\&Delta;L})l}{{\mathrm{G\&beta;<figure-callout\; id="3"\; label="hb"\; filenames="HDA00002274585500011.png"\; state="\{\{state\}\}">hb</figure-callout>}}^3}+\arctan \left(\frac{(P+\mathrm{\&Delta;P}){(L+\mathrm{\&Delta;L})}^2}{3\mathrm{EI}}\right)],$

$(L+\mathrm{\&Delta;L})\&CenterDot;\cos [\frac{(P+\mathrm{\&Delta;P})(L+\mathrm{\&Delta;L})l}{{\mathrm{G\&beta;<figure-callout\; id="3"\; label="hb"\; filenames="HDA00002274585500011.png"\; state="\{\{state\}\}">hb</figure-callout>}}^3}+\arctan \left(\frac{(P+\mathrm{\&Delta;P}){(L+\mathrm{\&Delta;L})}^2}{3\mathrm{EI}}\right)])$

Suppose t1 original state constantly, the top of left side probe beam is the rotation alpha degree, as shown in Figure 5; At t2 constantly, the beam of probe rotates Δ α degree again.And as shown in Figure 6, establish Can find out that k is different at different θ (in other words different camber line position).

Need to prove that α can calculate by t1 coordinate and boundary condition constantly.This calculating is that the state in 0 moment is exactly boundary condition by initial state (state in 0 moment) the successively process of iteration.The corner that top formula (4) calculates represents the corner of any position on the semi-girder, and the α here be the semi-girder top corner, i.e. value when x0 gets L2 among Fig. 1 in the formula (4).But do not need formula (4) to ask this α this moment, because for the probe beam, the profile that only needs its when distortion need not be concerned about how its stressed meeting is out of shape and is rotated, the angle that the probe beam on the left side has rotated when therefore only representing the original state in the t1 moment with this character of α here.

Because curved surface and the semi-girder of probe are tangent all the time, so at t2 constantly, the slope of this application point equates on the slope at semi-girder application point place and the probe curved surface, can obtain:

According to the curved surface slope k on the probe, can calculate the coordinate that B orders and be:

Wherein ρ be the A point to the distance at probe beam ANCHOR center, the A coordinate figure i.e. the t1 coordinate figure of the application point of power constantly above.

And should follow the coordinate figure of the application point of t2 power constantly above to equate according to the B point coordinate that the curved surface slope on the probe is calculated, that is:

According to formula (6), (7), (8), can eliminate Δ α, Δ P, constantly begin iterative computation from zero at first, can obtain the k value at diverse location place on the probe, namely can obtain the radius-of-curvature at diverse location place on the probe according to this k value.Said method calculates slightly complicated, can use software evaluation solution.

In sum, the present invention proposes microprobe on the sheet that utilizes particular design the probe of probe station is cushioned load applying method with break-in, and the size design of microprobe is with reference to content above.

The applying method that continues perpendicular to the acting force of semi-girder of the present invention is conducive to and the pure detection of reversing relevant mechanics parameter.Further specify the use procedure of the method below in conjunction with the test of reversing bond strength of small bonding (anode linkage) area.The size of supposing detected semi-girder has designed to be finished, and the ensuing the inventive method of utilizing is carried out subtest, mainly may further comprise the steps:

1) according to the length of detected semi-girder, and the length of ANCHOR, design size and the position of the special microprobe among the present invention, the specific design method summary of the invention that sees above, and make domain.

The probe depth of beam of this microprobe is by following step 2) technological parameter determine.The length of probe beam, width are determined according to tested beam parameter, can access solution in order to make the software numerical evaluation, and the length of probe beam need to be greater than the length of tested semi-girder (as shown in Figure 1, L2〉L1), and width is fit to domain and just can.These parameters have been determined, just can calculate the K value according to above-mentioned formula.

2) technique flow.The technique that adopts is bonding deep etching release standard technique, mainly comprises:

A) adopt ASE(Advanced silicon etch, advanced silicon etching) the method etching silicon wafer, etching depth is 4 μ m, carves the ANCHOR step;

B) adopt BHF(Buffer HF, buffered hydrofluoric acid) etching glass, corrosion depth is

Sputtered with Ti/Pt/Au, anti-footing effect;

C) silicon chip and glass sheet anode linkage;

D) KOH attenuate silicon face, remaining thick 75 ± 5 μ m;

E) ASE silicon chip, structure discharges, and obtains microprobe on the sheet.

3) probe station test.

As shown in Figure 1, apply the probe station probe at the arrow locations place, be delivered to semi-girder by microprobe on the sheet, the transverse deflection on tested semi-girder top, the right when recording bonding face (anchor point position place) fracture, (what be subject to this moment is pure twisting action to the suffered moment of torsion of bonding face in the time of can calculating the bonding face fracture, without any the tension and compression effect), can obtain the bond strength that reverses of small bonding (anode linkage) area.

More than by an embodiment application of the inventive method has been described, namely detect the bond strength that reverses of the small bonding face of anode linkage.But need to prove that the inventive method is fit to other with detections of the relevant mechanics parameter of pure twisting action, such as the torsional fracture intensity of beam etc.Those skilled in the art is to be understood that, in the scope that does not break away from this patent essence, keep microprobe among the present invention 1) curved surface probe and 2) outside two kinds of features of rotation formula, can make certain variation and modification to structure, its its preparation process also is not limited to the bonding deep etching release standard technique in the present embodiment.Protection scope of the present invention should be as the criterion so that claim is described.

Claims (10)

1. method that applies perpendicular to the acting force of semi-girder, its step comprises:

1) applies load force by probe station probe microprobe on the sheet with curved surface probe;

2) described upper microprobe applies acting force by the curved surface probe to semi-girder, simultaneously on this sheet microprobe rotate so that the acting force that this semi-girder is subject in BENDING PROCESS all the time perpendicular to this semi-girder.

2. such as claim 1 or described method, it is characterized in that: by single-ended semi-girder and the probe described upper microprobe that be composed of a fixed connection that admittedly prop up, described upper microprobe carries out described rotation around the described single-ended anchor point that admittedly props up semi-girder.

3. method as claimed in claim 2, it is characterized in that: the cross section of the pillar of described anchor point is rectangle.

4. method as claimed in claim 3 is characterized in that, the computing method of the radius-of-curvature at diverse location place are on the curved surface of described probe:

1) set up torsion angle equation in the square-section twist process of tested semi-girder anchor point pillar:

$\mathrm{\&delta;}=\frac{\mathrm{Tl}}{{\mathrm{GI}}_t}=\frac{\mathrm{Tl}}{{\mathrm{G\&beta;hb}}^3}---\left(1\right)$

Wherein G is modulus of shearing, I _tBe second polar moment of area, T is moment of torsion, and l is the height of ANCHOR, and h is the length of ANCHOR, and b is the wide of ANCHOR, and β is the Rectangular Section Lever Torsion coefficient;

Set up the sag equation of tested semi-girder:

$y\left(x\right)=-\frac{{{\mathrm{Px}}_0}^2}{6\mathrm{EI}}[3L-x_0]---\left(2\right)$

Wherein P is the suffered acting force of back end, x ₀For big or small along the position on the semi-girder direction, L is beam length, and I is moment of inertia, and E is elastic modulus;

2) set up coordinate system, its x axle is perpendicular to semi-girder, and the y axle is along the semi-girder direction, obtained on the sheet by formula (1), (2) that the coordinate figure of the application point of acting force is between the microprobe and tested semi-girder:

The t1 moment:

$(x_1,y_1)=(L\&CenterDot;\sin [\frac{\mathrm{PLl}}{{\mathrm{G\&beta;hb}}^3}+\arctan \left(\frac{{\mathrm{PL}}^2}{3\mathrm{EI}}\right)],L\&CenterDot;\cos [\frac{\mathrm{PLl}}{{\mathrm{G\&beta;hb}}^3}+\arctan \left(\frac{{\mathrm{PL}}^2}{3\mathrm{EI}}\right)\left]\right),$

The t2 moment:

$(x_2,y_2)=((L+\mathrm{\&Delta;L})\&CenterDot;\sin [\frac{(P+\mathrm{\&Delta;P})(L+\mathrm{\&Delta;L})l}{{\mathrm{G\&beta;hb}}^3}+\arctan \left(\frac{(P+\mathrm{\&Delta;P}){(L+\mathrm{\&Delta;L})}^2}{3\mathrm{EI}}\right)],$

$(L+\mathrm{\&Delta;L})\&CenterDot;\cos [\frac{(P+\mathrm{\&Delta;P})(L+\mathrm{\&Delta;L})l}{{\mathrm{G\&beta;hb}}^3}+\arctan \left(\frac{(P+\mathrm{\&Delta;P}){(L+\mathrm{\&Delta;L})}^2}{3\mathrm{EI}}\right)]),$

Be located at t1 constantly, the beam of left side probe is the rotation alpha degree; At t2 constantly, the beam of probe rotates Δ α degree again, and establishes

At t2 constantly, the slope of this application point equates on the slope at semi-girder application point place and the probe curved surface, that is:

If the A point is the application point of acting force between t1 moment probe and the semi-girder, the B point is the application point of acting force between t2 moment probe and the semi-girder; According to the curved surface slope k on the probe, obtain the coordinate that B orders and be:

Wherein ρ be the A point to the distance at probe beam ANCHOR center, the coordinate figure of the application point of the coordinate figure that this B is ordered and t2 power constantly equates, that is:

And then, obtain the k value at diverse location place on the probe according to formula (6), (7), (8), obtain the radius-of-curvature of corresponding position according to this k value.

5. method as claimed in claim 4, it is characterized in that: the semi-girder length of microprobe is greater than the length of tested semi-girder on the sheet.

6. method as claimed in claim 5 is characterized in that: use software to calculate the numerical solution of k value.

7. a device that applies perpendicular to the acting force of semi-girder is characterized in that, comprises semi-girder, applies microprobe on the sheet of acting force on this semi-girder and microprobe applies load force on this sheet probe station probe; The probe of described upper microprobe is the curved surface form, and the forms of motion of described upper microprobe is for rotating.

8. device as claimed in claim 7 is characterized in that: go up microprobe for described and comprise a single-ended semi-girder that admittedly props up that is fixedly connected with described probe, go up microprobe for described and carry out described rotation around this single-ended anchor point that admittedly props up semi-girder.

9. device as claimed in claim 7, it is characterized in that: the cross section of the pillar of described anchor point is rectangle.

10. device as claimed in claim 7, it is characterized in that: it is characterized in that: the semi-girder length of microprobe is greater than the length of tested semi-girder on the sheet.

Images