CN1445535A - Device for measuring thermal conductivity of conductor thin film - Google Patents
Device for measuring thermal conductivity of conductor thin film Download PDFInfo
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- CN1445535A CN1445535A CN 03113386 CN03113386A CN1445535A CN 1445535 A CN1445535 A CN 1445535A CN 03113386 CN03113386 CN 03113386 CN 03113386 A CN03113386 A CN 03113386A CN 1445535 A CN1445535 A CN 1445535A
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- thin film
- conductor thin
- thermal conductivity
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Abstract
A tester for measuring the heat conductivity of conductor film is composed of substrate, anchor on substrate, and at least 2 measuring units on said anchor, which has the conductor film strip, at least 2 leading wires to the anchor and the conductor film cantilever. Its advantages are simple structure, high technological compatibility, and high accuracy.
Description
One, technical field
The present invention relates to the conductor thin film Determination of Thermal Conductivity device that uses in a kind of microelectromechanical systems, it relates to the proving installation of conductor thin film thermal conductivity.
Two, background technology
Polysilicon membrane is widely used in mems device and the integrated circuit, is the important component of micro mechanical device.In the various parameters of film, thermal conductivity has very big influence to the performance of device.At present the various polysilicon membrane thermal conductivity test structures of external design use microelectromechanical systems technology or CMOSMEMS manufacturing technology mostly and need the aftertreatment bulk silicon etching, manufacturing process and test structure complexity, need the vacuum test environment, be difficult to solve the edge effect of structure, these method of testings be can not satisfy in surperficial micro mechanical device and other technology to the requirement of polysilicon membrane thermal conductivity on-line testing.Therefore need design can satisfy the test structure of surface processing technique to the on-line testing of polysilicon membrane thermal conductivity.
Three, technology contents
1, technical matters: the invention provides a kind of proving installation that can reduce the conductor thin film thermal conductivity of test environment requirement, the present invention is particluarly suitable for measuring under the natural air environment polysilicon membrane thermal conductivity.
2, technical scheme: the present invention is a kind of proving installation that is used to measure the conductor thin film thermal conductivity of thermal conductivity, comprise: substrate 1, on substrate 1, be provided with anchor body 4, on anchor body 4, be provided with 3 determination units at least, this determination unit comprises conductor thin film bar 21, be respectively equipped with at the two ends of conductor thin film bar 21 and be no less than 2 strip conductor films lead-in wire 22,23 and 24,25, conductor thin film lead-in wire 22,23 and 24,25 is located at respectively on the anchor body 4, and in 2 determination units, establish respectively at least conductor thin film semi-girder 31 and 32 and its length unequal.
3, technique effect: the present invention is when test, at first determination unit (not containing the conductor thin film semi-girder) is measured to obtain total coefficient of heat transfer of needs, when applying certain voltage at its AB two ends, can in total, produce Temperature Distribution, at this moment the current value that records the AB two ends obtains heating general power (being the product of electric current and voltage), record the magnitude of voltage of CD end, obtain the thermograde (utilizing the mutual relationship of resistance variations and temperature variation) on the conductor thin film bar in this determination unit, so just can obtain being provided with the total coefficient of heat transfer on the lead portion and conductor thin film bar in the determination unit of conductor thin film semi-girder.In the time of should applying certain voltage at the AB two ends of the determination unit that is provided with the conductor thin film semi-girder together, in total, also can produce Temperature Distribution, the current value that records its AB two ends obtains heating general power, the magnitude of voltage that records its CD end obtains the thermograde on the fire-bar, obtain two heat transfer systems that test structure is total, when obtaining required a coefficient of heat transfer and two heat transfer coefficients, and in knowing the determination unit that is provided with the conductor thin film semi-girder after the physical dimension of semi-girder (owing to be subjected to the influence of technology, the physical dimension of semi-girder and the size of design can there are differences, and the beam physical dimension is the key factor that influences model and thermal conductivity of film, thereby need to measure), just can obtain the thermal conductivity of polysilicon membrane by calculating.A plurality of unit of the present invention can only use one deck polysilicon, and manufacturing process and test structure are simple and other device fabrication is compatible fully.The present invention can measure under the natural convection air environment; Have higher testing precision, can satisfy in online detection mems device surface manufacturing process or other device fabrication test request the polysilicon membrane thermal conductivity.
Four, description of drawings
Fig. 1 is an embodiment of the invention structure vertical view.
Fig. 2 is an embodiment of the invention structure cut-open view.
Fig. 3 is a structural perspective of the present invention.
Fig. 4 is the cut-open view of another embodiment of the present invention.
Five, specific embodiments
Embodiment 1 (with reference to Fig. 4) is a kind of to be used to measure the proving installation of the conductor thin film thermal conductivity of thermal conductivity, comprise: substrate 1, on substrate 1, be provided with anchor body 4, on anchor body 4, be provided with 3 determination units at least, this determination unit comprises conductor thin film bar 21, be respectively equipped with at the two ends of conductor thin film bar 21 and be no less than 2 strip conductor films lead-in wire 22,23 and 24,25, conductor thin film lead-in wire 22,23 and 24,25 are located at respectively on the anchor body 4, and in 2 determination units, establish respectively at least conductor thin film semi-girder 31 and 32 and its length unequal, conductor thin film bar 21 and lead-in wire 22,23 and 24,25 are the polysilicon membrane bar, conductor thin film is that the arm beam is the polysilicon membrane semi-girder, lead-in wire 22,23 and 24,25 respectively by aluminium press welding block A, B, C, D fixes.
Embodiment 2 (with reference to Fig. 1～3) is a kind of to be used to measure the proving installation of the conductor thin film thermal conductivity of thermal conductivity, comprise: substrate 1, on substrate 1, be provided with anchor body 4, on anchor body 4, be provided with 3 determination units at least, this determination unit comprises conductor thin film bar 21, be respectively equipped with at the two ends of conductor thin film bar 21 and be no less than 2 strip conductor films lead-in wire 22,23 and 24,25, conductor thin film lead-in wire 22,23 and 24,25 are located at respectively on the anchor body 4, and in 2 determination units, establish respectively at least conductor thin film semi-girder 31 and 32 and its length unequal, between substrate 1 and anchor body 4, be provided with silicon dioxide layer 11 and silicon nitride layer 12, conductor thin film bar 21 and lead-in wire 22,23 and 24,25 are the polysilicon membrane bar, conductor thin film is that the arm beam is the polysilicon membrane semi-girder, lead-in wire 22,23 and 24,25 respectively by aluminium press welding block A, B, C, D fixes.
Claims (4)
1, a kind of proving installation that is used to measure the conductor thin film thermal conductivity of thermal conductivity, comprise: substrate (1), on substrate (1), be provided with anchor body (4), it is characterized in that on anchor body (4), being provided with at least 3 determination units, this determination unit comprises conductor thin film bar (21), be respectively equipped with at the two ends of conductor thin film bar (21) and be no less than 2 strip conductor films lead-in wire (22,23 and 24,25), conductor thin film lead-in wire (22,23 and 24,25) be located at respectively on the anchor body (4), and it is unequal to establish conductor thin film semi-girder (31 and 32) and its length at least in 2 determination units respectively.
2, the proving installation of conductor thin film thermal conductivity according to claim 1 is characterized in that being provided with silicon dioxide layer (11) and silicon nitride layer (12) between substrate (1) and anchor body (4).
3, the proving installation of conductor thin film thermal conductivity according to claim 1 and 2 is characterized in that conductor thin film bar (21) and lead-in wire (22,23 and 24,25) are the polysilicon membrane bar, and the conductor thin film semi-girder is the polysilicon membrane semi-girder.
4, the proving installation of conductor thin film thermal conductivity according to claim 3 is characterized in that lead-in wire (22,23 and 24,25) is fixing by aluminium press welding block (A, B, C, D) respectively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03113386 CN1206528C (en) | 2003-05-01 | 2003-05-01 | Device for measuring thermal conductivity of conductor thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03113386 CN1206528C (en) | 2003-05-01 | 2003-05-01 | Device for measuring thermal conductivity of conductor thin film |
Publications (2)
| Publication Number | Publication Date |
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| CN1445535A true CN1445535A (en) | 2003-10-01 |
| CN1206528C CN1206528C (en) | 2005-06-15 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 03113386 Expired - Lifetime CN1206528C (en) | 2003-05-01 | 2003-05-01 | Device for measuring thermal conductivity of conductor thin film |
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| CN (1) | CN1206528C (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100368795C (en) * | 2004-12-22 | 2008-02-13 | 东南大学 | Structure and method for measuring thermal-expansion coefficient of polycrystalline silicon thin film |
| WO2010052032A1 (en) * | 2008-11-06 | 2010-05-14 | Interuniversitair Microelektronica | Thermal conductivity of thin films |
| CN101825592A (en) * | 2010-04-02 | 2010-09-08 | 中国科学院工程热物理研究所 | Method and device for testing thermal physical property of single conductive filamentary material by using harmonic method |
| CN101907589A (en) * | 2010-06-25 | 2010-12-08 | 中国科学院工程热物理研究所 | Harmonic micrometer/nanometre film thermal property test method |
| CN101975794A (en) * | 2010-09-09 | 2011-02-16 | 复旦大学 | 3 omega thermal conductivity measurement scheme suitable for metal film material |
| CN102217414A (en) * | 2008-02-27 | 2011-10-12 | 莫列斯日本有限公司 | Heater device, measuring device, and method of estimating heat conductivity |
| CN102297877A (en) * | 2011-05-27 | 2011-12-28 | 上海大学 | Device and method for measuring thermoelectric parameters of film |
| CN106841285A (en) * | 2017-02-17 | 2017-06-13 | 电子科技大学 | A kind of simple novel film thermal property test structure |
| WO2019136885A1 (en) * | 2018-01-09 | 2019-07-18 | 中国计量大学 | Steady-state test method for heat-conducting property in the direction along plane of sheet material |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101799440B (en) * | 2010-03-28 | 2011-06-29 | 华中科技大学 | Device and method for testing thermal conductivity of thin film |
-
2003
- 2003-05-01 CN CN 03113386 patent/CN1206528C/en not_active Expired - Lifetime
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100368795C (en) * | 2004-12-22 | 2008-02-13 | 东南大学 | Structure and method for measuring thermal-expansion coefficient of polycrystalline silicon thin film |
| CN102217414B (en) * | 2008-02-27 | 2014-04-30 | 莫列斯日本有限公司 | Heater device, measuring device, and method of estimating heat conductivity |
| CN102217414A (en) * | 2008-02-27 | 2011-10-12 | 莫列斯日本有限公司 | Heater device, measuring device, and method of estimating heat conductivity |
| WO2010052032A1 (en) * | 2008-11-06 | 2010-05-14 | Interuniversitair Microelektronica | Thermal conductivity of thin films |
| CN101825592B (en) * | 2010-04-02 | 2012-10-31 | 中国科学院工程热物理研究所 | Method and device for testing thermal physical property of single conductive filamentary material by using harmonic method |
| CN101825592A (en) * | 2010-04-02 | 2010-09-08 | 中国科学院工程热物理研究所 | Method and device for testing thermal physical property of single conductive filamentary material by using harmonic method |
| CN101907589A (en) * | 2010-06-25 | 2010-12-08 | 中国科学院工程热物理研究所 | Harmonic micrometer/nanometre film thermal property test method |
| CN101907589B (en) * | 2010-06-25 | 2012-06-27 | 中国科学院工程热物理研究所 | Harmonic micrometer/nanometre film thermal property test method |
| CN101975794B (en) * | 2010-09-09 | 2012-07-25 | 复旦大学 | 3 omega thermal conductivity measurement scheme suitable for metal film material |
| CN101975794A (en) * | 2010-09-09 | 2011-02-16 | 复旦大学 | 3 omega thermal conductivity measurement scheme suitable for metal film material |
| CN102297877A (en) * | 2011-05-27 | 2011-12-28 | 上海大学 | Device and method for measuring thermoelectric parameters of film |
| CN106841285A (en) * | 2017-02-17 | 2017-06-13 | 电子科技大学 | A kind of simple novel film thermal property test structure |
| WO2019136885A1 (en) * | 2018-01-09 | 2019-07-18 | 中国计量大学 | Steady-state test method for heat-conducting property in the direction along plane of sheet material |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1206528C (en) | 2005-06-15 |
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