CN210037029U - High-sensitivity wide-range capacitive force sensor - Google Patents
High-sensitivity wide-range capacitive force sensor Download PDFInfo
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- CN210037029U CN210037029U CN201921224977.6U CN201921224977U CN210037029U CN 210037029 U CN210037029 U CN 210037029U CN 201921224977 U CN201921224977 U CN 201921224977U CN 210037029 U CN210037029 U CN 210037029U
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Abstract
The utility model discloses a high sensitive wide range capacitanc force transducer belongs to the sensor field. The high-sensitivity wide-range capacitive force sensor comprises a silicon substrate and a glass lining plate which are bonded with each other, wherein the first end of the silicon substrate is connected with an upper silicon film through a medium; a first boron-silicon film and a first film upper electrode are sequentially formed on the surface of the upper silicon film; a lower silicon cantilever beam is formed at the second end of the silicon substrate, and a second boron-silicon film covers the second end of the silicon substrate and the upper surface of the lower silicon cantilever beam; a second boron silicon film and a second film upper electrode are sequentially formed on the surface of the second boron silicon film; the high-sensitivity wide-range capacitive force sensor further comprises a substrate electrode located on the top surface of the glass liner plate.
Description
Technical Field
The utility model relates to a sensor technical field, in particular to high sensitive wide range capacitanc force transducer.
Background
The force sensor is widely applied in life and industry, and is widely applied to various industries such as water conservancy and hydropower, railway traffic, intelligent building, production automatic control, aerospace, war industry, electric power, machine tools and the like. The force sensors are of various types, and common force sensors include capacitive force sensors, resistance strain gauge type force sensors, piezoelectric sensors, resonant force sensors and the like. The capacitive force sensor has the advantages of simple structure, good temperature stability, low price, high sensitivity and strong overload capacity. With the progress and development of science and technology, the requirements on the force sensor are higher and higher, and the force sensor has smaller volume requirement and higher sensitivity.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a high sensitive wide range capacitanc force sensor to realize the force sensor of little volume, high sensitivity, wide range.
In order to solve the technical problem, the utility model provides a high-sensitivity wide-range capacitive force sensor, which comprises a silicon substrate and a glass lining plate which are bonded with each other,
the first end of the silicon substrate is connected with an upper silicon film through a medium; a first boron-silicon film and a first film upper electrode are sequentially formed on the surface of the upper silicon film;
a lower silicon cantilever beam is formed at the second end of the silicon substrate, and a second boron-silicon film covers the second end of the silicon substrate and the upper surface of the lower silicon cantilever beam; a second boron silicon film and a second film upper electrode are sequentially formed on the surface of the second boron silicon film;
the high-sensitivity wide-range capacitive force sensor further comprises a substrate electrode located on the top surface of the glass liner plate.
Optionally, the substrate electrode is located at a central position of the glass substrate plate.
Optionally, the first portion of the substrate electrode and the first boron silicon film form a first parallel plate capacitor, and the second portion and the second boron silicon film form a second parallel plate capacitor.
Optionally, one end of the lower silicon cantilever is connected to the silicon substrate, and the other end of the lower silicon cantilever is suspended; the upper surface of the silicon substrate is flush with the silicon substrate.
Optionally, one end of the upper silicon thin film is suspended, and the other end of the upper silicon thin film is connected with the silicon substrate through the medium.
Optionally, the upper silicon film is higher than the lower silicon cantilever, and the upper silicon film can contact the lower silicon cantilever when being bent downward.
Optionally, the thickness of the upper silicon thin film is smaller than that of the lower silicon cantilever.
The high-sensitivity wide-range capacitive force sensor comprises a silicon substrate and a glass lining plate which are bonded with each other, wherein the first end of the silicon substrate is connected with an upper silicon film through a medium; a first boron-silicon film and a first film upper electrode are sequentially formed on the surface of the upper silicon film; a lower silicon cantilever beam is formed at the second end of the silicon substrate, and a second boron-silicon film covers the second end of the silicon substrate and the upper surface of the lower silicon cantilever beam; a second boron silicon film and a second film upper electrode are sequentially formed on the surface of the second boron silicon film; the high-sensitivity wide-range capacitive force sensor further comprises a substrate electrode located on the top surface of the glass liner plate.
The utility model discloses following beneficial effect has:
(1) the force-sensitive beams with different sensitivities are utilized, the upper silicon film force-sensitive beam is thinner and is more sensitive to force, so that the force sensor is more sensitive under the condition of small force, the lower silicon cantilever beam is thicker and is not so sensitive to force, the force sensor can bear larger force, and the measuring range of the force sensor is increased;
(2) the lower silicon cantilever beam plays a role in supporting the upper silicon film to a certain extent, and plays a role in protection, so that the sensor is more reliable;
(3) the magnitude of the force is reflected by the magnitude of the two capacitance values, so that the requirement on a peripheral measuring circuit is low, and the method is simple and reliable; the silicon micro-machining technology can be adopted for processing, the process is reliable, the batch manufacturing is easy, and the cost is low.
Drawings
Fig. 1 is a schematic structural diagram of a high-sensitivity wide-range capacitive force sensor provided by the present invention;
FIG. 2 is a schematic flow chart of a method for manufacturing a high-sensitivity wide-range capacitive force sensor;
FIG. 3 is a schematic diagram of a structure for providing a silicon wafer;
FIG. 4 is a schematic view with portions of a silicon thin film layer and corresponding silicon oxide intermediate layer over a silicon wafer removed;
fig. 5 is a schematic view of forming a first boron silicon film and a second boron silicon film;
FIG. 6 is a schematic view of forming a first silicon film upper electrode and a second silicon film upper electrode;
FIG. 7 is a schematic illustration of etching a thickness of a backside of a silicon substrate;
FIG. 8 is a schematic illustration of the release of the separation of the upper silicon membrane and the lower cantilever;
fig. 9 is a schematic view of forming a substrate electrode on a glass substrate.
Detailed Description
The present invention provides a high-sensitivity wide-range capacitive force sensor, which is described in further detail below with reference to the accompanying drawings and specific embodiments. The advantages and features of the present invention will become more fully apparent from the following description and appended claims. It should be noted that the drawings are in simplified form and are not to precise scale, and are provided for convenience and clarity in order to facilitate the description of the embodiments of the present invention.
Example one
The utility model provides a high sensitive wide range capacitanc force transducer, its structure is shown in figure 1. The high-sensitivity wide-range capacitive force sensor comprises a silicon substrate 1 and a glass lining plate 2 which are bonded with each other; wherein, the first end of the silicon substrate 1 is connected with an upper silicon film 3 through a medium 8; a first boron silicon film 51 and a first film upper electrode 61 are sequentially formed on the surface of the upper silicon film 3; a lower-layer silicon cantilever beam 4 is formed at the second end of the silicon substrate 1, and a second boron silicon film 52 covers the second end of the silicon substrate 1 and the upper surface of the lower-layer silicon cantilever beam 4; the second boron silicon film 52 and the second film upper electrode 62 are formed in this order on the surface of the second boron silicon film 52. Further, the high-sensitivity wide-range capacitive force sensor further comprises a substrate electrode 7 which is positioned on the top surface of the glass lining plate 2 and is positioned at the central position of the glass lining plate 2, namely the central position of the substrate electrode 7 is coincident with the central position of the glass lining plate 2. The first part of the substrate electrode 7 and the first boron silicon film 51 form a first parallel plate capacitor, the second part and the second boron silicon film 52 form a second parallel plate capacitor, and the capacitance values of the two capacitors can reflect the stress of the sensor.
Specifically, one end of the lower silicon cantilever beam 4 is connected with the silicon substrate 1, and the other end is suspended; the upper surface of which is flush with the silicon substrate 1. One end of the upper silicon film 3 is suspended, and the other end is connected with the silicon substrate 1 through the medium 8. The upper silicon film 3 is higher than the lower silicon cantilever beam 4, a gap with a certain distance exists between the upper silicon film 3 and the upper surface of the lower silicon cantilever beam 4, and the upper silicon film 3 can contact the lower silicon cantilever beam 4 when being bent downwards. The thickness of the upper silicon membrane 3 is much thinner than that of the lower silicon cantilever 4, and has higher sensitivity to force.
Referring to fig. 1, the right half of the substrate electrode 7 and the first boron silicon film 51 constitute a first parallel plate capacitor, and the left half and the second boron silicon film 52 constitute a second parallel plate capacitor. When a small force is applied to the sensor, the upper silicon film 3 is firstly deformed, the distance between the first boron silicon film 51 and the substrate electrode 7 is reduced, the first parallel plate capacitance is increased, the upper silicon film 3 does not contact the lower silicon cantilever beam 4, and the second parallel plate capacitance is unchanged. When the applied force is increased continuously, the deformation of the upper silicon film 3 is increased, the first parallel plate capacitance is increased, the upper silicon film 3 can contact the lower silicon cantilever beam 4, when the applied force is large enough, the upper silicon film 3 can cause the lower silicon cantilever beam 4 to deform, the distance between the second boron silicon film 52 and the substrate electrode 7 can be reduced, and the second parallel plate capacitance can be increased. Therefore, the stress of the sensor can be measured according to the capacitance values of the first parallel plate capacitor and the second parallel plate capacitor of the sensor capacitor, and the sensor has the characteristics of high sensitivity and wide range.
The utility model provides a high sensitive wide range capacitanc force transducer utilizes two electric capacities to reflect the size of power. The sensor is provided with two force sensitive beams with different force sensitivity, when a smaller force is applied to the sensor, the upper silicon film firstly deforms but cannot contact the lower cantilever beam, the capacitance value of the first capacitor changes, and the capacitance value of the second capacitor remains unchanged; when the applied force continues to increase, the deformation of the upper silicon film is larger and larger, the capacitance value of the first capacitor is also larger and larger, and when the applied force is large enough, the upper silicon film can contact the lower silicon cantilever beam to cause the deformation of the lower silicon cantilever beam, and the capacitance value of the second capacitor also begins to change. Thus, the sensor can measure small force with high sensitivity, and can measure large force with wide range.
The utility model discloses a high sensitive wide range capacitanc force transducer forms through following method preparation:
step S21, providing a silicon wafer, removing part of the silicon film layer on the surface of the silicon wafer and the corresponding silicon oxide intermediate layer, forming an upper silicon film and exposing part of the silicon substrate;
step S22, performing a boron-rich diffusion on the upper silicon thin film and the exposed surface of the partial silicon substrate to form a first boron silicon film and a second boron silicon film;
step S23, forming an upper electrode pattern by photoetching, and forming a first silicon film upper electrode and a second silicon film upper electrode;
step S24, etching a certain thickness from the back of the silicon substrate, photoetching the back to form a lower cantilever beam, and separating and releasing the upper silicon film and the lower cantilever beam from the back by adopting hydrofluoric acid wet etching;
step S25, providing a glass substrate, and sputtering a layer of chrome gold on the glass substrate to be used as a substrate electrode;
and step S26, bonding the processed silicon wafer and the glass substrate to form the sensor.
Firstly, providing a silicon wafer with a (100) crystal orientation substrate as shown in fig. 3, removing a part of silicon thin film layer above the silicon wafer and a corresponding silicon oxide intermediate layer 8 through a reactive ion etching process, forming an upper silicon thin film 3 and exposing a lower silicon substrate 1, as shown in fig. 4;
then, as shown in fig. 5, a first boron silicon film 51 and a second boron silicon film 52 are formed by performing a dense boron diffusion on the surface of the upper silicon thin film 3 and the exposed upper surface of the portion of the silicon substrate 1 (the left side of the silicon substrate 1 in the figure);
then, photoetching to form an upper electrode pattern, and forming a first silicon film upper electrode 61 and a second silicon film upper electrode 62 by adopting magnetron sputtering electrode metal aluminum; referring to fig. 6, the first silicon film upper electrode 61 is formed on the first boron silicon film 51, and the second silicon film upper electrode 62 is formed on the second boron silicon film 52;
etching a certain thickness from the back of the silicon substrate 1 by using tetramethylammonium hydroxide, as shown in fig. 7, performing back lithography to form a lower cantilever beam 4, protecting the front by using glue, and separating and releasing the upper silicon thin film 3 and the lower cantilever beam 4 from the back by using hydrofluoric acid wet etching, as shown in fig. 8;
selecting a glass substrate 2, firstly carrying out standard cleaning, and sputtering a layer of chrome gold on the glass substrate 2 to be used as a substrate electrode 7, as shown in figure 9;
finally, the processed silicon wafer shown in fig. 8 and the processed glass substrate 2 shown in fig. 9 are bonded by using a silicon-glass bonding process, so as to form the sensor shown in fig. 1.
The above description is only for the preferred embodiment of the present invention and is not intended to limit the scope of the present invention, and any modification and modification made by those skilled in the art according to the above disclosure are all within the scope of the claims.
Claims (7)
1. A high-sensitivity wide-range capacitive force sensor comprises a silicon substrate (1) and a glass lining plate (2) which are bonded with each other,
the first end of the silicon substrate (1) is connected with an upper silicon film (3) through a medium (8); a first boron silicon film (51) and a first film upper electrode (61) are sequentially formed on the surface of the upper layer silicon film (3);
a lower-layer silicon cantilever beam (4) is formed at the second end of the silicon substrate (1), and a second boron silicon film (52) covers the second end of the silicon substrate (1) and the upper surface of the lower-layer silicon cantilever beam (4); a second boron silicon film (52) and a second film upper electrode (62) are formed on the surface of the second boron silicon film (52) in sequence;
the high-sensitivity wide-range capacitive force sensor also comprises a substrate electrode (7) which is positioned on the top surface of the glass lining plate (2).
2. A highly sensitive wide-range capacitive force sensor according to claim 1, characterized in that the substrate electrode (7) is located in the center of the glass backing plate (2).
3. The highly sensitive wide-range capacitive force sensor according to claim 2, wherein a first portion of the substrate electrode (7) forms a first parallel-plate capacitance with the first boron silicon film (51) and a second portion forms a second parallel-plate capacitance with the second boron silicon film (52).
4. The high-sensitivity wide-range capacitive force sensor according to claim 1, wherein one end of the lower silicon cantilever (4) is connected with the silicon substrate (1), and the other end is suspended; the upper surface of which is flush with the silicon substrate (1).
5. The high-sensitivity wide-range capacitive force sensor according to claim 1, wherein one end of the upper silicon thin film (3) is suspended, and the other end is connected with the silicon substrate (1) through the medium (8).
6. The highly sensitive wide-range capacitive force sensor according to claim 1, wherein the upper silicon membrane (3) is higher than the lower silicon cantilever beam (4), and the upper silicon membrane (3) is capable of contacting the lower silicon cantilever beam (4) when bent downward.
7. The highly sensitive wide-range capacitive force sensor according to claim 1, wherein the thickness of the upper silicon membrane (3) is smaller than the thickness of the lower silicon cantilever beam (4).
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| CN201921224977.6U CN210037029U (en) | 2019-07-31 | 2019-07-31 | High-sensitivity wide-range capacitive force sensor |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110307919A (en) * | 2019-07-31 | 2019-10-08 | 中国电子科技集团公司第五十八研究所 | A kind of high-sensitivity wide-range capacitive force transducer and preparation method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110307919A (en) * | 2019-07-31 | 2019-10-08 | 中国电子科技集团公司第五十八研究所 | A kind of high-sensitivity wide-range capacitive force transducer and preparation method thereof |
| CN110307919B (en) * | 2019-07-31 | 2024-01-19 | 中国电子科技集团公司第五十八研究所 | High-sensitivity wide-range capacitive force sensor and preparation method thereof |
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