CN1672264A - 场效应晶体管 - Google Patents
场效应晶体管 Download PDFInfo
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- CN1672264A CN1672264A CN03817832.XA CN03817832A CN1672264A CN 1672264 A CN1672264 A CN 1672264A CN 03817832 A CN03817832 A CN 03817832A CN 1672264 A CN1672264 A CN 1672264A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
- H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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Abstract
Description
根据JIS K7113的伸长率ε(%)(在屈服点的伸长率) | 根据数据手册等的伸长率ε(%)(文献中所公开的在屈服点的伸长率) | 相对介电常数 | |
聚对苯二甲酸乙二酯(PET) | 3.1 | 1.4至3.8 | 4.3 |
聚酰亚胺(PI) | 2 | 2 | 3.3 |
聚苯乙烯(PS) | 1.1 | 0.5至1.8 | 2.6 |
聚氰基支链淀粉(CYEPL) | 4.5 | 4.8 | 18.5 |
聚碳酸酯(PC) | 6 | 7至15 | 2.9 |
低交联的聚乙烯基苯酚(PVP) | 2.3 | 无 | 3.6 |
高交联的聚乙烯基苯酚(PVP) | 1.8 | 无 | 3.6 |
基板(ε2) | 绝缘体层(ε1) | ε1/ε2 | JIS6744弯曲试验 | 晶体管性能的变化 | |
实施例1 | PET(3.1) | CYEPL(4.5) | 1.5 | ○ | -10% |
实施例2 | PET(3.1) | PC(6) | 1.9 | ○ | -3% |
实施例3 | PI(2) | CYEPL(4.5) | 2.3 | ○ | -10% |
实施例4 | PI(2) | PC(6) | 3.0 | ○ | -4% |
实施例5 | PI(2) | 低交联的PVP(2.3) | 1.2 | ○ | -7% |
对比例1 | PET(3.1) | PS(1.1) | 0.4 | × | 不可测量 |
对比例2 | PET(3.1) | 低交联的PVP(2.3) | 0.7 | × | 不可测量 |
对比例3 | PET(3.1) | 高交联的PVP(1.8) | 0.6 | × | 不可测量 |
对比例4 | PI(2) | PS(1.1) | 0.6 | × | 不可测量 |
对比例5 | PI(2) | 高交联的PVP(1.8) | 0.9 | × | 不可测量 |
Claims (12)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002223021 | 2002-07-31 | ||
JP223021/2002 | 2002-07-31 | ||
PCT/JP2003/009747 WO2004012271A1 (ja) | 2002-07-31 | 2003-07-31 | 電界効果トランジスタ |
Related Child Applications (1)
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CN03817832.XA Expired - Lifetime CN100594617C (zh) | 2002-07-31 | 2003-07-31 | 场效应晶体管 |
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US (1) | US7164190B2 (zh) |
CN (2) | CN101667624B (zh) |
AU (1) | AU2003252289A1 (zh) |
WO (1) | WO2004012271A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101501080B (zh) * | 2006-08-04 | 2011-05-11 | 三菱化学株式会社 | 绝缘层、电子元件、场效应晶体管和聚乙烯基苯硫酚 |
Families Citing this family (13)
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JP4933051B2 (ja) * | 2004-03-10 | 2012-05-16 | キヤノン株式会社 | 電界効果型トランジスタおよびその製造方法、積層体の製造方法 |
WO2005086254A1 (en) * | 2004-03-10 | 2005-09-15 | Canon Kabushiki Kaisha | Field effect transistor, method of producing the same, and method of producing laminated member |
EP1811573A4 (en) | 2004-11-11 | 2010-03-24 | Mitsubishi Chem Corp | Field effect transistor |
US20060231829A1 (en) * | 2005-04-13 | 2006-10-19 | Xerox Corporation | TFT gate dielectric with crosslinked polymer |
DE102005035696A1 (de) * | 2005-07-27 | 2007-02-15 | Thüringisches Institut für Textil- und Kunststoff-Forschung e.V. | Verfahren zur Herstellung organischer Feldeffekttransistoren und darauf basierender Schaltungen auf Lösungsmittel- und temperaturempfindlichen Kunststoffoberflächen und organische Feldeffekttransistoren und organische optoelektronische Bauelemente nach diesem Verfahren |
US20070040165A1 (en) * | 2005-08-16 | 2007-02-22 | Klaus Dimmler | Method of fabricating organic FETs |
KR101221789B1 (ko) * | 2006-12-28 | 2013-01-11 | 삼성전자주식회사 | 유기 메모리 소자 및 그의 제조방법 |
US7859082B2 (en) * | 2007-05-23 | 2010-12-28 | Infineon Technologies Ag | Lateral bipolar transistor and method of production |
EP2067841A1 (en) | 2007-12-06 | 2009-06-10 | Agfa HealthCare NV | X-Ray imaging photostimulable phosphor screen or panel. |
JP5202254B2 (ja) * | 2008-11-27 | 2013-06-05 | 株式会社ジャパンディスプレイイースト | 表示装置および表示装置の製造方法 |
US9076975B2 (en) * | 2010-04-27 | 2015-07-07 | Xerox Corporation | Dielectric composition for thin-film transistors |
JP2012222007A (ja) * | 2011-04-05 | 2012-11-12 | Dainippon Printing Co Ltd | コプレナ型の酸化物半導体素子とその製造方法 |
TWI740535B (zh) * | 2020-06-11 | 2021-09-21 | 國立臺灣大學 | 聚醯亞胺系共聚物及包含其之電子元件及場效應電晶體 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS61202469A (ja) | 1985-03-05 | 1986-09-08 | Mitsubishi Electric Corp | 電界効果型トランジスタとその製造方法 |
FR2664430B1 (fr) | 1990-07-04 | 1992-09-18 | Centre Nat Rech Scient | Transistor a effet de champ en couche mince de structure mis, dont l'isolant et le semiconducteur sont realises en materiaux organiques. |
JPH0652745A (ja) * | 1991-09-03 | 1994-02-25 | Nitto Denko Corp | 接合部形成用シート又はテープ |
JP3246189B2 (ja) * | 1994-06-28 | 2002-01-15 | 株式会社日立製作所 | 半導体表示装置 |
JP2000258798A (ja) * | 1999-03-05 | 2000-09-22 | Sanyo Electric Co Ltd | 表示装置 |
JP2001094107A (ja) * | 1999-09-20 | 2001-04-06 | Hitachi Ltd | 有機半導体装置及び液晶表示装置 |
JP2001244467A (ja) * | 2000-02-28 | 2001-09-07 | Hitachi Ltd | コプラナー型半導体装置とそれを用いた表示装置および製法 |
US6433359B1 (en) * | 2001-09-06 | 2002-08-13 | 3M Innovative Properties Company | Surface modifying layers for organic thin film transistors |
-
2003
- 2003-07-31 CN CN200910165165.3A patent/CN101667624B/zh not_active Expired - Lifetime
- 2003-07-31 CN CN03817832.XA patent/CN100594617C/zh not_active Expired - Lifetime
- 2003-07-31 AU AU2003252289A patent/AU2003252289A1/en not_active Abandoned
- 2003-07-31 WO PCT/JP2003/009747 patent/WO2004012271A1/ja active Application Filing
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- 2005-01-31 US US11/045,157 patent/US7164190B2/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101501080B (zh) * | 2006-08-04 | 2011-05-11 | 三菱化学株式会社 | 绝缘层、电子元件、场效应晶体管和聚乙烯基苯硫酚 |
Also Published As
Publication number | Publication date |
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US7164190B2 (en) | 2007-01-16 |
WO2004012271A1 (ja) | 2004-02-05 |
CN100594617C (zh) | 2010-03-17 |
CN101667624B (zh) | 2011-08-17 |
AU2003252289A1 (en) | 2004-02-16 |
US20050145995A1 (en) | 2005-07-07 |
CN101667624A (zh) | 2010-03-10 |
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