CN1670941A - 制造自对准纳米柱形空气桥的方法以及由之制造的结构 - Google Patents
制造自对准纳米柱形空气桥的方法以及由之制造的结构 Download PDFInfo
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- CN1670941A CN1670941A CN200510004583.6A CN200510004583A CN1670941A CN 1670941 A CN1670941 A CN 1670941A CN 200510004583 A CN200510004583 A CN 200510004583A CN 1670941 A CN1670941 A CN 1670941A
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/7682—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing the dielectric comprising air gaps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/5329—Insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
Description
Claims (26)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/804,553 | 2004-03-19 | ||
US10/804,553 US7030495B2 (en) | 2004-03-19 | 2004-03-19 | Method for fabricating a self-aligned nanocolumnar airbridge and structure produced thereby |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1670941A true CN1670941A (zh) | 2005-09-21 |
CN1322573C CN1322573C (zh) | 2007-06-20 |
Family
ID=34986912
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005100045836A Expired - Fee Related CN1322573C (zh) | 2004-03-19 | 2005-01-18 | 制造自对准纳米柱形空气桥的方法以及由之制造的结构 |
Country Status (4)
Country | Link |
---|---|
US (2) | US7030495B2 (zh) |
JP (1) | JP4160961B2 (zh) |
CN (1) | CN1322573C (zh) |
TW (1) | TWI338932B (zh) |
Cited By (7)
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CN101471324B (zh) * | 2007-12-26 | 2010-07-07 | 和舰科技(苏州)有限公司 | 一种超低k互连结构及其制造方法 |
CN101317259B (zh) * | 2005-11-30 | 2011-07-13 | 朗姆研究公司 | 具有用于减少电容的间隙的器件 |
CN102047450B (zh) * | 2008-05-26 | 2013-03-13 | 松下电器产业株式会社 | 化合物半导体发光元件、采用该化合物半导体发光元件的照明装置以及化合物半导体发光元件的制造方法 |
CN103165517A (zh) * | 2011-12-08 | 2013-06-19 | 中芯国际集成电路制造(上海)有限公司 | 降低层间介质层介电常数的方法 |
CN103165523A (zh) * | 2011-12-19 | 2013-06-19 | 中芯国际集成电路制造(上海)有限公司 | 互连结构的制造方法 |
CN104217983A (zh) * | 2013-05-29 | 2014-12-17 | 英飞凌科技德累斯顿有限责任公司 | 用于处理载体的方法和载体 |
CN106033754A (zh) * | 2015-03-11 | 2016-10-19 | 联华电子股份有限公司 | 具有纳米孔隙的半导体元件及其制造方法 |
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US7517637B2 (en) * | 2004-03-19 | 2009-04-14 | International Business Machines Corporation | Method of producing self-aligned mask in conjunction with blocking mask, articles produced by same and composition for same |
US7323387B2 (en) * | 2004-11-12 | 2008-01-29 | Seagate Technology Llc | Method to make nano structure below 25 nanometer with high uniformity on large scale |
US7977032B2 (en) * | 2005-02-11 | 2011-07-12 | International Business Machines Corporation | Method to create region specific exposure in a layer |
US7531444B2 (en) * | 2005-02-11 | 2009-05-12 | International Business Machines Corporation | Method to create air gaps using non-plasma processes to damage ILD materials |
US7541227B2 (en) * | 2005-06-02 | 2009-06-02 | Hewlett-Packard Development Company, L.P. | Thin film devices and methods for forming the same |
GR1006890B (el) * | 2005-09-16 | 2010-07-19 | Ευαγγελος Γογγολιδης | Μεθοδος για την κατασκευη επιφανειων μεγαλου επιφανειακου λογου και μεγαλου λογου ασυμμετριας σε υποστρωματα. |
US7347953B2 (en) * | 2006-02-02 | 2008-03-25 | International Business Machines Corporation | Methods for forming improved self-assembled patterns of block copolymers |
US7560222B2 (en) * | 2006-10-31 | 2009-07-14 | International Business Machines Corporation | Si-containing polymers for nano-pattern device fabrication |
US7482270B2 (en) * | 2006-12-05 | 2009-01-27 | International Business Machines Corporation | Fully and uniformly silicided gate structure and method for forming same |
US8394483B2 (en) | 2007-01-24 | 2013-03-12 | Micron Technology, Inc. | Two-dimensional arrays of holes with sub-lithographic diameters formed by block copolymer self-assembly |
US8083953B2 (en) * | 2007-03-06 | 2011-12-27 | Micron Technology, Inc. | Registered structure formation via the application of directed thermal energy to diblock copolymer films |
US8557128B2 (en) | 2007-03-22 | 2013-10-15 | Micron Technology, Inc. | Sub-10 nm line features via rapid graphoepitaxial self-assembly of amphiphilic monolayers |
US7999160B2 (en) * | 2007-03-23 | 2011-08-16 | International Business Machines Corporation | Orienting, positioning, and forming nanoscale structures |
FR2907598A1 (fr) * | 2007-03-27 | 2008-04-25 | Commissariat Energie Atomique | Procede de fabrication d'un circuit integre comprenant des cavites d'air |
US8097175B2 (en) | 2008-10-28 | 2012-01-17 | Micron Technology, Inc. | Method for selectively permeating a self-assembled block copolymer, method for forming metal oxide structures, method for forming a metal oxide pattern, and method for patterning a semiconductor structure |
US7959975B2 (en) | 2007-04-18 | 2011-06-14 | Micron Technology, Inc. | Methods of patterning a substrate |
US8294139B2 (en) | 2007-06-21 | 2012-10-23 | Micron Technology, Inc. | Multilayer antireflection coatings, structures and devices including the same and methods of making the same |
US8372295B2 (en) | 2007-04-20 | 2013-02-12 | Micron Technology, Inc. | Extensions of self-assembled structures to increased dimensions via a “bootstrap” self-templating method |
US8404124B2 (en) * | 2007-06-12 | 2013-03-26 | Micron Technology, Inc. | Alternating self-assembling morphologies of diblock copolymers controlled by variations in surfaces |
US8147914B2 (en) * | 2007-06-12 | 2012-04-03 | Massachusetts Institute Of Technology | Orientation-controlled self-assembled nanolithography using a block copolymer |
US8080615B2 (en) * | 2007-06-19 | 2011-12-20 | Micron Technology, Inc. | Crosslinkable graft polymer non-preferentially wetted by polystyrene and polyethylene oxide |
US8283258B2 (en) | 2007-08-16 | 2012-10-09 | Micron Technology, Inc. | Selective wet etching of hafnium aluminum oxide films |
JP2009094378A (ja) | 2007-10-11 | 2009-04-30 | Panasonic Corp | 半導体装置及びその製造方法 |
US7828986B2 (en) * | 2007-10-29 | 2010-11-09 | International Business Machines Corporation | Forming surface features using self-assembling masks |
US8999492B2 (en) | 2008-02-05 | 2015-04-07 | Micron Technology, Inc. | Method to produce nanometer-sized features with directed assembly of block copolymers |
US8101261B2 (en) * | 2008-02-13 | 2012-01-24 | Micron Technology, Inc. | One-dimensional arrays of block copolymer cylinders and applications thereof |
US7993816B2 (en) * | 2008-03-17 | 2011-08-09 | International Business Machines Corporation | Method for fabricating self-aligned nanostructure using self-assembly block copolymers, and structures fabricated therefrom |
US8425982B2 (en) * | 2008-03-21 | 2013-04-23 | Micron Technology, Inc. | Methods of improving long range order in self-assembly of block copolymer films with ionic liquids |
US8426313B2 (en) * | 2008-03-21 | 2013-04-23 | Micron Technology, Inc. | Thermal anneal of block copolymer films with top interface constrained to wet both blocks with equal preference |
US8114300B2 (en) | 2008-04-21 | 2012-02-14 | Micron Technology, Inc. | Multi-layer method for formation of registered arrays of cylindrical pores in polymer films |
US8114301B2 (en) | 2008-05-02 | 2012-02-14 | Micron Technology, Inc. | Graphoepitaxial self-assembly of arrays of downward facing half-cylinders |
JP5049391B2 (ja) * | 2008-10-29 | 2012-10-17 | パナソニック株式会社 | 検知素子、検知装置及び酸素濃度検査装置 |
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US8304493B2 (en) | 2010-08-20 | 2012-11-06 | Micron Technology, Inc. | Methods of forming block copolymers |
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US9105634B2 (en) * | 2012-06-29 | 2015-08-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Voids in interconnect structures and methods for forming the same |
US9087699B2 (en) | 2012-10-05 | 2015-07-21 | Micron Technology, Inc. | Methods of forming an array of openings in a substrate, and related methods of forming a semiconductor device structure |
US9229328B2 (en) | 2013-05-02 | 2016-01-05 | Micron Technology, Inc. | Methods of forming semiconductor device structures, and related semiconductor device structures |
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US9177795B2 (en) | 2013-09-27 | 2015-11-03 | Micron Technology, Inc. | Methods of forming nanostructures including metal oxides |
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US10256141B2 (en) * | 2015-09-23 | 2019-04-09 | Intel Corporation | Maskless air gap to prevent via punch through |
US10304803B2 (en) * | 2016-05-05 | 2019-05-28 | Invensas Corporation | Nanoscale interconnect array for stacked dies |
RU2685082C1 (ru) * | 2018-06-19 | 2019-04-16 | Федеральное государственное бюджетное учреждение науки Институт радиотехники и электроники им. В.А. Котельникова Российской академии наук | Способ изготовления воздушных мостиков в качестве межэлектродных соединений интегральных схем |
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US5814555A (en) * | 1996-06-05 | 1998-09-29 | Advanced Micro Devices, Inc. | Interlevel dielectric with air gaps to lessen capacitive coupling |
FR2803092B1 (fr) * | 1999-12-24 | 2002-11-29 | St Microelectronics Sa | Procede de realisation d'interconnexions metalliques isolees dans des circuits integres |
CN1153272C (zh) * | 2001-03-23 | 2004-06-09 | 华邦电子股份有限公司 | 具有高q值电感组件的半导体技术制造方法及其结构 |
US6905938B2 (en) * | 2001-04-24 | 2005-06-14 | United Microelectronics Corp. | Method of forming interconnect structure with low dielectric constant |
US6531376B1 (en) * | 2002-04-17 | 2003-03-11 | Semiconductor Components Industries Llc | Method of making a semiconductor device with a low permittivity region |
-
2004
- 2004-03-19 US US10/804,553 patent/US7030495B2/en active Active
-
2005
- 2005-01-18 CN CNB2005100045836A patent/CN1322573C/zh not_active Expired - Fee Related
- 2005-03-10 TW TW094107356A patent/TWI338932B/zh not_active IP Right Cessation
- 2005-03-10 JP JP2005066836A patent/JP4160961B2/ja not_active Expired - Fee Related
- 2005-06-10 US US11/150,059 patent/US7037744B2/en not_active Expired - Fee Related
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101317259B (zh) * | 2005-11-30 | 2011-07-13 | 朗姆研究公司 | 具有用于减少电容的间隙的器件 |
CN101471324B (zh) * | 2007-12-26 | 2010-07-07 | 和舰科技(苏州)有限公司 | 一种超低k互连结构及其制造方法 |
CN102047450B (zh) * | 2008-05-26 | 2013-03-13 | 松下电器产业株式会社 | 化合物半导体发光元件、采用该化合物半导体发光元件的照明装置以及化合物半导体发光元件的制造方法 |
CN103165517A (zh) * | 2011-12-08 | 2013-06-19 | 中芯国际集成电路制造(上海)有限公司 | 降低层间介质层介电常数的方法 |
CN103165517B (zh) * | 2011-12-08 | 2015-04-15 | 中芯国际集成电路制造(上海)有限公司 | 降低层间介质层介电常数的方法 |
CN103165523A (zh) * | 2011-12-19 | 2013-06-19 | 中芯国际集成电路制造(上海)有限公司 | 互连结构的制造方法 |
CN103165523B (zh) * | 2011-12-19 | 2015-08-05 | 中芯国际集成电路制造(上海)有限公司 | 互连结构的制造方法 |
CN104217983A (zh) * | 2013-05-29 | 2014-12-17 | 英飞凌科技德累斯顿有限责任公司 | 用于处理载体的方法和载体 |
CN106033754A (zh) * | 2015-03-11 | 2016-10-19 | 联华电子股份有限公司 | 具有纳米孔隙的半导体元件及其制造方法 |
CN106033754B (zh) * | 2015-03-11 | 2019-04-12 | 联华电子股份有限公司 | 具有纳米孔隙的半导体元件及其制造方法 |
Also Published As
Publication number | Publication date |
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US7030495B2 (en) | 2006-04-18 |
US20050208752A1 (en) | 2005-09-22 |
US7037744B2 (en) | 2006-05-02 |
TW200601494A (en) | 2006-01-01 |
US20050272341A1 (en) | 2005-12-08 |
TWI338932B (en) | 2011-03-11 |
JP4160961B2 (ja) | 2008-10-08 |
CN1322573C (zh) | 2007-06-20 |
JP2005268783A (ja) | 2005-09-29 |
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