CN1668915B - 用于判定具有次微米截面积的结构元件的界面特征的系统和方法 - Google Patents

用于判定具有次微米截面积的结构元件的界面特征的系统和方法 Download PDF

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Publication number
CN1668915B
CN1668915B CN038164191A CN03816419A CN1668915B CN 1668915 B CN1668915 B CN 1668915B CN 038164191 A CN038164191 A CN 038164191A CN 03816419 A CN03816419 A CN 03816419A CN 1668915 B CN1668915 B CN 1668915B
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China
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structural detail
traverse
electron beam
parameter value
section
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Expired - Fee Related
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CN038164191A
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Chinese (zh)
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CN1668915A (zh
Inventor
B·森德尔
O·德罗尔
A·塔姆
O·米那德瓦
R·克里斯
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Applied Materials Inc
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Applied Materials Inc
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2813—Scanning microscopes characterised by the application
    • H01J2237/2814—Measurement of surface topography
    • H01J2237/2816—Length

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
CN038164191A 2002-07-11 2003-07-11 用于判定具有次微米截面积的结构元件的界面特征的系统和方法 Expired - Fee Related CN1668915B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US39486402P 2002-07-11 2002-07-11
US60/394,864 2002-07-11
PCT/US2003/021690 WO2004008255A2 (en) 2002-07-11 2003-07-11 Method and apparatus for measuring critical dimensions with a particle beam

Publications (2)

Publication Number Publication Date
CN1668915A CN1668915A (zh) 2005-09-14
CN1668915B true CN1668915B (zh) 2011-06-15

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CN038164191A Expired - Fee Related CN1668915B (zh) 2002-07-11 2003-07-11 用于判定具有次微米截面积的结构元件的界面特征的系统和方法

Country Status (6)

Country Link
EP (1) EP1523671A2 (ko)
JP (1) JP4493495B2 (ko)
KR (1) KR101057554B1 (ko)
CN (1) CN1668915B (ko)
AU (1) AU2003263776A1 (ko)
WO (1) WO2004008255A2 (ko)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101035426B1 (ko) 2003-07-11 2011-05-18 어플라이드 머티리얼즈 이스라엘 리미티드 기준 구조 엘리먼트를 이용하여 구조 엘리먼트의 단면 피쳐를 결정하는 시스템 및 방법
DE102004004597B4 (de) * 2004-01-29 2008-08-07 Qimonda Ag Verfahren zur Vermessung einer Struktur auf einem Halbleiterwafer mit einem Rasterelektronenmikroskop
DE102004021442A1 (de) * 2004-04-28 2005-11-24 Infineon Technologies Ag Verfahren zum messtechnischen Charakterisieren einer Struktur
CN102569114B (zh) * 2010-12-17 2014-08-27 无锡华润上华半导体有限公司 一种金属导线尺寸监测方法
CN103065992A (zh) * 2012-12-14 2013-04-24 上海集成电路研发中心有限公司 半导体表面结构侧壁表征方法
CN107978536A (zh) * 2016-10-25 2018-05-01 中芯国际集成电路制造(上海)有限公司 一种晶圆版图中图案的cdsem扫描方法
US10438769B1 (en) * 2018-05-02 2019-10-08 Kla-Tencor Corporation Array-based characterization tool
WO2020237105A1 (en) * 2019-05-21 2020-11-26 Applied Materials, Inc. Enhanced cross sectional features measurement methodology
CN111199895B (zh) * 2020-01-02 2022-07-15 长江存储科技有限责任公司 测量沟道的方法、装置、服务器及可读存储介质

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61128114A (ja) * 1984-11-27 1986-06-16 Toshiba Corp パタ−ンの表面形状評価方法
JPH0621784B2 (ja) * 1984-12-10 1994-03-23 株式会社日立製作所 パタ−ン形状評価装置
JPH0727943B2 (ja) * 1986-12-22 1995-03-29 三菱電機株式会社 半導体パタ−ン形状評価装置
JPH0663758B2 (ja) * 1987-10-14 1994-08-22 株式会社東芝 パターンの測定方法
JPH01311551A (ja) * 1988-06-08 1989-12-15 Toshiba Corp パターン形状測定装置
JPH07111335B2 (ja) * 1990-02-07 1995-11-29 株式会社東芝 パターン形状測定方法及び装置
JPH07111336B2 (ja) * 1990-02-07 1995-11-29 株式会社東芝 パターン寸法測定方法及び装置
KR100489911B1 (ko) 1999-12-14 2005-05-17 어플라이드 머티어리얼스, 인코포레이티드 하전 입자 빔을 사용하여 표본을 검사하는 방법 및 시스템
US6472662B1 (en) * 2000-08-30 2002-10-29 International Business Machines Corporation Automated method for determining several critical dimension properties from scanning electron microscope by using several tilted beam or sample scans
US6670612B1 (en) * 2002-07-01 2003-12-30 Kla-Tencor Technologies Corporation Undercut measurement using SEM
KR101035426B1 (ko) * 2003-07-11 2011-05-18 어플라이드 머티리얼즈 이스라엘 리미티드 기준 구조 엘리먼트를 이용하여 구조 엘리먼트의 단면 피쳐를 결정하는 시스템 및 방법

Also Published As

Publication number Publication date
JP4493495B2 (ja) 2010-06-30
AU2003263776A8 (en) 2004-02-02
JP2005533252A (ja) 2005-11-04
KR20060084787A (ko) 2006-07-25
WO2004008255A3 (en) 2004-06-10
KR101057554B1 (ko) 2011-08-17
WO2004008255A2 (en) 2004-01-22
AU2003263776A1 (en) 2004-02-02
CN1668915A (zh) 2005-09-14
EP1523671A2 (en) 2005-04-20
WO2004008255A8 (en) 2004-07-22

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Address after: The city of Israel, Harvard

Co-patentee after: Applied Materials Inc.

Patentee after: Applied Materials Inc.

Address before: The city of Israel, Harvard

Co-patentee before: Applied Materials Inc.

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CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20110615

Termination date: 20150711

EXPY Termination of patent right or utility model