CN1647367A - 积分执行功率合成的转换型功率放大器 - Google Patents
积分执行功率合成的转换型功率放大器 Download PDFInfo
- Publication number
- CN1647367A CN1647367A CNA028241266A CN02824126A CN1647367A CN 1647367 A CN1647367 A CN 1647367A CN A028241266 A CNA028241266 A CN A028241266A CN 02824126 A CN02824126 A CN 02824126A CN 1647367 A CN1647367 A CN 1647367A
- Authority
- CN
- China
- Prior art keywords
- winding
- input
- amplifier
- power amplifier
- active equipment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/217—Class D power amplifiers; Switching amplifiers
- H03F3/2178—Class D power amplifiers; Switching amplifiers using more than one switch or switching amplifier in parallel or in series
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/217—Class D power amplifiers; Switching amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/217—Class D power amplifiers; Switching amplifiers
- H03F3/2173—Class D power amplifiers; Switching amplifiers of the bridge type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/537—A transformer being used as coupling element between two amplifying stages
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/541—Transformer coupled at the output of an amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
- H03F2203/21157—A filter circuit being added at the output of a power amplifier stage
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
- H03F2203/21172—A series resonance circuit being coupled at the output of a power amplifier
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Abstract
Description
Claims (19)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/004,703 | 2001-12-03 | ||
US10/004,703 US6603352B2 (en) | 2001-12-03 | 2001-12-03 | Switched-mode power amplifier integrally performing power combining |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1647367A true CN1647367A (zh) | 2005-07-27 |
CN100459422C CN100459422C (zh) | 2009-02-04 |
Family
ID=21712104
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB028241266A Expired - Fee Related CN100459422C (zh) | 2001-12-03 | 2002-12-03 | 积分执行功率合成的转换型功率放大器 |
Country Status (6)
Country | Link |
---|---|
US (3) | US6603352B2 (zh) |
JP (1) | JP2005512375A (zh) |
KR (1) | KR100926197B1 (zh) |
CN (1) | CN100459422C (zh) |
AU (1) | AU2002351903A1 (zh) |
WO (1) | WO2003049145A2 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104113352A (zh) * | 2014-07-22 | 2014-10-22 | 中国科学技术大学 | 具有抵消自干扰信号功能的变压器及基于该变压器的超高频rfid接收机前端 |
Families Citing this family (45)
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YU49097B (sh) * | 1999-11-23 | 2003-12-31 | dr. Milan Prokin | Polumostni pojačavač sa podizačem napona |
US6603352B2 (en) | 2001-12-03 | 2003-08-05 | Icefyre Semiconductor Corporation | Switched-mode power amplifier integrally performing power combining |
US7342300B2 (en) * | 2003-06-30 | 2008-03-11 | Zarbana Digital Fund Llc | Integrated circuit incorporating wire bond inductance |
US6879209B2 (en) * | 2003-07-08 | 2005-04-12 | Icefyre Semiconductor Corp. | Switched-mode power amplifier using lumped element impedance inverter for parallel combining |
KR100512181B1 (ko) * | 2003-07-11 | 2005-09-05 | 삼성전자주식회사 | 멀티 레벨 셀을 갖는 플래시 메모리 장치와 그것의 독출방법 및 프로그램 방법 |
US7157965B1 (en) * | 2004-06-21 | 2007-01-02 | Qualcomm Incorporated | Summing power amplifier |
US7948665B2 (en) * | 2004-10-06 | 2011-05-24 | CSSN, Inc | Uniform illumination for camera based scanning devices |
US7355470B2 (en) | 2006-04-24 | 2008-04-08 | Parkervision, Inc. | Systems and methods of RF power transmission, modulation, and amplification, including embodiments for amplifier class transitioning |
US7327803B2 (en) | 2004-10-22 | 2008-02-05 | Parkervision, Inc. | Systems and methods for vector power amplification |
CN2749181Y (zh) * | 2004-12-28 | 2005-12-28 | 精恒科技集团有限公司 | 多天线接收输出处理装置 |
US7345539B2 (en) * | 2005-02-10 | 2008-03-18 | Raytheon Company | Broadband microwave amplifier |
US7362182B2 (en) * | 2005-08-31 | 2008-04-22 | Ge Security, Inc. | Power amplifier |
US7911272B2 (en) | 2007-06-19 | 2011-03-22 | Parkervision, Inc. | Systems and methods of RF power transmission, modulation, and amplification, including blended control embodiments |
US8013675B2 (en) | 2007-06-19 | 2011-09-06 | Parkervision, Inc. | Combiner-less multiple input single output (MISO) amplification with blended control |
US9106316B2 (en) | 2005-10-24 | 2015-08-11 | Parkervision, Inc. | Systems and methods of RF power transmission, modulation, and amplification |
US8031804B2 (en) | 2006-04-24 | 2011-10-04 | Parkervision, Inc. | Systems and methods of RF tower transmission, modulation, and amplification, including embodiments for compensating for waveform distortion |
US7937106B2 (en) | 2006-04-24 | 2011-05-03 | ParkerVision, Inc, | Systems and methods of RF power transmission, modulation, and amplification, including architectural embodiments of same |
KR100772449B1 (ko) * | 2006-06-14 | 2007-11-02 | 주식회사 뉴파워 프라즈마 | 파형 왜곡 방지 회로를 구비한 무선 주파수 파워 앰프 |
US8280325B2 (en) * | 2006-06-23 | 2012-10-02 | Broadcom Corporation | Configurable transmitter |
KR100757371B1 (ko) * | 2006-07-07 | 2007-09-11 | 삼성전자주식회사 | 고주파 신호의 엔벨롭 변조를 위한 전력 증폭기 회로 및방법 |
US7933565B2 (en) * | 2006-07-14 | 2011-04-26 | Qualcomm, Incorporated | Transformer coupling of antennas |
US8315336B2 (en) | 2007-05-18 | 2012-11-20 | Parkervision, Inc. | Systems and methods of RF power transmission, modulation, and amplification, including a switching stage embodiment |
WO2009005768A1 (en) | 2007-06-28 | 2009-01-08 | Parkervision, Inc. | Systems and methods of rf power transmission, modulation, and amplification |
KR100950307B1 (ko) * | 2008-01-30 | 2010-03-31 | 한국과학기술원 | 전력 증폭기 |
KR101016227B1 (ko) * | 2008-06-03 | 2011-02-25 | 경희대학교 산학협력단 | 폴라송신기에 사용되는 스위치모드 전력증폭기 |
US7952433B2 (en) | 2008-11-25 | 2011-05-31 | Samsung Electro-Mechanics Company | Power amplifiers with discrete power control |
US8536950B2 (en) * | 2009-08-03 | 2013-09-17 | Qualcomm Incorporated | Multi-stage impedance matching |
US8102205B2 (en) | 2009-08-04 | 2012-01-24 | Qualcomm, Incorporated | Amplifier module with multiple operating modes |
US8289085B2 (en) * | 2009-12-16 | 2012-10-16 | Auriga Measurement Systems, LLC | Amplifier circuit |
US7944296B1 (en) * | 2010-03-12 | 2011-05-17 | Samsung Electro-Mechanics Company | Low power mode amplification with a transformer output matching and a virtual ground |
US8971083B1 (en) * | 2010-03-26 | 2015-03-03 | John Michael Johnson | Recreational vehicle transformer |
US8188788B2 (en) | 2010-04-23 | 2012-05-29 | Samsung Electro-Mechanics | Systems and methods for a discrete resizing of power devices with concurrent power combining structure for radio frequency power amplifier |
DE102011012622A1 (de) * | 2011-02-28 | 2012-08-30 | Stolberg Hf-Technik AG | Hochfrequenzleistungsvervielfacherlösung |
KR20140026458A (ko) | 2011-04-08 | 2014-03-05 | 파커비전, 인크. | Rf 전력 송신, 변조 및 증폭 시스템들 및 방법들 |
KR20140034895A (ko) | 2011-06-02 | 2014-03-20 | 파커비전, 인크. | 안테나 제어 |
CN106415435B (zh) | 2013-09-17 | 2020-08-11 | 帕克维辛股份有限公司 | 用于呈现信息承载时间函数的方法、装置和系统 |
EP2882100B1 (en) * | 2013-12-03 | 2019-10-23 | NXP USA, Inc. | Multiple-state, switch-mode power amplifier systems and methods of their operation |
EP2882099A1 (en) * | 2013-12-03 | 2015-06-10 | Freescale Semiconductor, Inc. | Multiple-state, switch-mode power amplifier systems and methods of their operation |
US9385669B2 (en) * | 2014-06-23 | 2016-07-05 | Texas Instruments Incorporated | Class-E outphasing power amplifier with efficiency and output power enhancement circuits and method |
US9742367B2 (en) * | 2015-07-29 | 2017-08-22 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Outphasing transmitter systems and methods |
CA3009347A1 (en) * | 2015-12-28 | 2017-07-06 | Inovio Pharmaceuticals, Inc. | Electroporation device with improved signal generator |
US10763814B2 (en) | 2016-08-09 | 2020-09-01 | John Bean Technologies Corporation | Radio frequency processing apparatus and method |
US10804863B2 (en) | 2018-11-26 | 2020-10-13 | General Electric Company | System and method for amplifying and combining radiofrequency power |
US11211196B2 (en) | 2019-03-29 | 2021-12-28 | Intel Corporation | Tunable transformer |
US20230238881A1 (en) * | 2022-01-27 | 2023-07-27 | Qualcomm Incorporated | Radio frequency (rf) power amplifier with transformer for improved output power, wideband, and spurious rejection |
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US593128A (en) * | 1897-11-02 | Frederick william schroeder | ||
FR2109130A5 (zh) * | 1970-10-02 | 1972-05-26 | Thomson Csf | |
JPS5728966B2 (zh) * | 1973-08-22 | 1982-06-19 | ||
US3934099A (en) * | 1974-08-16 | 1976-01-20 | Bell Telephone Laboratories, Incorporated | Bias, feedback and network arrangements for hybrid circuits |
US4968949A (en) * | 1986-07-25 | 1990-11-06 | Meyer Sound Laboratories Incorporated | Ohmically isolating input circuit |
US4764735A (en) * | 1986-09-15 | 1988-08-16 | Sunair Electronics, Inc. | Push-pull transformer feed-back amplifier |
US4924195A (en) | 1989-06-19 | 1990-05-08 | At&T Bell Laboratories | Crystal oscillator with broad tuning capability |
JP2529038B2 (ja) * | 1991-07-19 | 1996-08-28 | 株式会社日立製作所 | 高周波高効率電力増幅器 |
US5563762A (en) | 1994-11-28 | 1996-10-08 | Northern Telecom Limited | Capacitor for an integrated circuit and method of formation thereof, and a method of adding on-chip capacitors to an integrated circuit |
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CN2355497Y (zh) * | 1998-02-18 | 1999-12-22 | 徐耀忠 | 一种高可靠功率放大器 |
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US6331801B1 (en) * | 2000-04-07 | 2001-12-18 | Harris Corporation | RF amplifier system having an improved power supply |
US6603352B2 (en) | 2001-12-03 | 2003-08-05 | Icefyre Semiconductor Corporation | Switched-mode power amplifier integrally performing power combining |
US7198730B2 (en) * | 2003-08-28 | 2007-04-03 | E. I. Du Pont De Nemours And Company | Phosphorescent material |
JP2006160724A (ja) * | 2004-11-10 | 2006-06-22 | Idemitsu Kosan Co Ltd | 金属錯体化合物及びそれを用いた有機エレクトロルミネッセンス素子 |
-
2001
- 2001-12-03 US US10/004,703 patent/US6603352B2/en not_active Expired - Lifetime
-
2002
- 2002-12-03 KR KR1020047008505A patent/KR100926197B1/ko not_active IP Right Cessation
- 2002-12-03 JP JP2003550250A patent/JP2005512375A/ja not_active Withdrawn
- 2002-12-03 CN CNB028241266A patent/CN100459422C/zh not_active Expired - Fee Related
- 2002-12-03 AU AU2002351903A patent/AU2002351903A1/en not_active Abandoned
- 2002-12-03 WO PCT/CA2002/001847 patent/WO2003049145A2/en active Application Filing
-
2003
- 2003-06-30 US US10/610,145 patent/US6937096B2/en not_active Ceased
-
2007
- 2007-08-30 US US11/848,231 patent/USRE42448E1/en not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104113352A (zh) * | 2014-07-22 | 2014-10-22 | 中国科学技术大学 | 具有抵消自干扰信号功能的变压器及基于该变压器的超高频rfid接收机前端 |
CN104113352B (zh) * | 2014-07-22 | 2016-05-25 | 中国科学技术大学 | 具有抵消自干扰信号功能的变压器及基于该变压器的超高频rfid接收机前端 |
Also Published As
Publication number | Publication date |
---|---|
USRE42448E1 (en) | 2011-06-14 |
AU2002351903A8 (en) | 2003-06-17 |
CN100459422C (zh) | 2009-02-04 |
US6937096B2 (en) | 2005-08-30 |
WO2003049145A2 (en) | 2003-06-12 |
WO2003049145A3 (en) | 2004-03-25 |
JP2005512375A (ja) | 2005-04-28 |
US20040027199A1 (en) | 2004-02-12 |
KR100926197B1 (ko) | 2009-11-09 |
US6603352B2 (en) | 2003-08-05 |
US20030102915A1 (en) | 2003-06-05 |
AU2002351903A1 (en) | 2003-06-17 |
KR20050058266A (ko) | 2005-06-16 |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: ICEFYRE SEMICONDUCTOR CORP Free format text: FORMER OWNER: ICEFYRE SEMICONDUCTOR CORP. Effective date: 20060908 |
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C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20060908 Address after: The United States Delaware Applicant after: Icefyre Semiconductor Corp. Address before: Ontario, Canada Applicant before: Icefyre Semiconductor Corp. |
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C14 | Grant of patent or utility model | ||
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C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090204 Termination date: 20131203 |