CN1636263A - 顶面活性光学器件装置和方法 - Google Patents
顶面活性光学器件装置和方法 Download PDFInfo
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- CN1636263A CN1636263A CNA028131851A CN02813185A CN1636263A CN 1636263 A CN1636263 A CN 1636263A CN A028131851 A CNA028131851 A CN A028131851A CN 02813185 A CN02813185 A CN 02813185A CN 1636263 A CN1636263 A CN 1636263A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
- H01S5/0237—Fixing laser chips on mounts by soldering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/42—Arrays of surface emitting lasers
- H01S5/423—Arrays of surface emitting lasers having a vertical cavity
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Sustainable Energy (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Lasers (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
Description
SiCl4 | 14sccm |
SF6 | 7sccm |
压力 | 20mTorr |
夹具温度 | 30℃ |
射频功率 | 129W |
偏压 | -245Vdc |
时间 | 5min |
SiCl4 | 14sccm |
SF6 | 7sccm |
压力 | 70mTorr |
夹具温度 | 30℃ |
射频功率 | 92W |
偏压 | -190 Vdc |
时间 | 30min |
SF6 | 7sccm |
压力 | 70mTorr |
夹具温度 | 30℃ |
射频功率 | 50W |
偏压 | -20Vdc |
时间 | 3min |
工艺 | 材料 | 材料熔点 | 附着温度 |
附着光学器件到电子IC | 20%Au/80%Sn | 280℃ | 310℃ |
附着IC到封装 | 95%Sn/5%Sb | 240℃ | 270℃ |
附着封装到印刷电路板 | 63%Sn/37%Pb | 180℃ | 210℃ |
工艺 | 材料 | 材料熔点 | 附着温度 |
附着光学IC到电子IC | 20%Au/80%Sn | 280℃ | 310℃ |
附着IC到封装 | 95%Sn/5%Sb | 240℃ | 260℃ |
附着对准片到封装 | 热胶水 | 230℃ | 230℃ |
附着封装到印刷电路板 | 63%Sn/37%Pb | 180℃ | 210℃ |
焊接材料 | 熔点温度(℃) |
81%金./19%铟 | 487 |
96.85%金/3.15%硅 | 363 |
88%金/12%锗 | 361 |
100%铅 | 327 |
95%铅/5%铟 | 314 |
95%铅/5%锡 | 314 |
5%银/90%铅/5%铟 | 310 |
1.5%银/97.5%铅/1%锡 | 309 |
78%金/22%锡 | 305 |
2.5%银/95.5%铅/2%锡 | 304 |
2.5%银/97.5%铅 | 303 |
90%铅/10%锡 | 302 |
2.5%银/92.5%铅/5%铟 | 300 |
2.5%银/92.5%铅/5%锡 | 296 |
95%铅/5%锑 | 295 |
5%银/90%铅/5%锡 | 292 |
2%银/88%铅/10%锡 | 290 |
85%铅/15%锡 | 288 |
86%铅/8%铋/4%锡/1%铟/1%银 | 286 |
80%金/20%锡 | 280 |
80%铅/20%锡 | 280 |
81%铅./19%铟 | 280 |
75%铅/25%铟 | 264 |
70%铅/30%锡 | 257 |
63.2%铅/35%锡/1.8%铟 | 243 |
95%锡/5%锑 | 240 |
60%铅/40%锡 | 238 |
97%锡/3%锑 | 238 |
99%锡/1%锑 | 235 |
100%锡 | 232 |
2.5%银/97.5%锡 | 226 |
3.5%银/95%锡/1.5%锑 | 226 |
60%铅/40%铟 | 225 |
3.5%银/96.5%锡 | 221 |
10%金/90%锡 | 217 |
95.5%锡/3.9%银/0.6%铜 | 217 |
96.2%锡/2.5%银/0.8%铜/0.5%锑 | 217 |
10%铅/90%锡 | 213 |
50%铅/50%锡 | 212 |
50%铅/50%铟 | 209 |
15%铅/85%锡 | 205 |
45%铅/55%锡 | 200 |
20%铅/80%锡 | 199 |
91%锡/9%锌 | 199 |
40%铅/60%锡 | 188 |
2.8%银/77.2%锡/20%铟 | 187 |
89%锡/8%锌/3%铋 | 187 |
30%铅/70%锡 | 186 |
40%铅/60%铟 | 185 |
37%铅/63%锡 | 183 |
37.5%铅/37.5%锡/25%铟 | 181 |
2%银/36%铅/62%锡 | 179 |
30%铅/70%铟 | 174 |
100%铟 | 157 |
5%银/15%铅/80%铟 | 149 |
58%锡/42%铟 | 145 |
3%银/97%铟 | 143 |
42%锡/58%铋 | 139 |
48%锡/52%铟 | 118 |
30%铅/18%锡/52%铋 | 96 |
Claims (5)
Applications Claiming Priority (16)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/897,158 US6753197B2 (en) | 2001-06-29 | 2001-06-29 | Opto-electronic device integration |
US09/897,158 | 2001-06-29 | ||
US09/896,189 US6620642B2 (en) | 2001-06-29 | 2001-06-29 | Opto-electronic device integration |
US09/897,160 US6724794B2 (en) | 2001-06-29 | 2001-06-29 | Opto-electronic device integration |
US09/897,665 | 2001-06-29 | ||
US09/896,665 US20030015572A1 (en) | 2001-06-29 | 2001-06-29 | Successive integration of multiple devices process and product |
US09/896,983 | 2001-06-29 | ||
US09/896,189 | 2001-06-29 | ||
US09/896,983 US6790691B2 (en) | 2001-06-29 | 2001-06-29 | Opto-electronic device integration |
US09/896,160 | 2001-06-29 | ||
US36603202P | 2002-03-19 | 2002-03-19 | |
US36599802P | 2002-03-19 | 2002-03-19 | |
US60/365,998 | 2002-03-19 | ||
US60/366,032 | 2002-03-19 | ||
US10/180,383 | 2002-06-26 | ||
US10/180,383 US6753199B2 (en) | 2001-06-29 | 2002-06-26 | Topside active optical device apparatus and method |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1636263A true CN1636263A (zh) | 2005-07-06 |
CN100355014C CN100355014C (zh) | 2007-12-12 |
Family
ID=27575091
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB028131851A Expired - Lifetime CN100355014C (zh) | 2001-06-29 | 2002-06-28 | 顶面活性光学器件装置和方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6753199B2 (zh) |
EP (1) | EP1410425A4 (zh) |
KR (2) | KR20040015283A (zh) |
CN (1) | CN100355014C (zh) |
CA (1) | CA2447364A1 (zh) |
WO (1) | WO2003003423A1 (zh) |
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CN103426708A (zh) * | 2012-05-17 | 2013-12-04 | 佳能株式会社 | 静电透镜的电极及其制造方法 |
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US7871927B2 (en) * | 2006-10-17 | 2011-01-18 | Cufer Asset Ltd. L.L.C. | Wafer via formation |
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US7851818B2 (en) * | 2008-06-27 | 2010-12-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fabrication of compact opto-electronic component packages |
KR101039999B1 (ko) * | 2010-02-08 | 2011-06-09 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
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-
2002
- 2002-06-26 US US10/180,383 patent/US6753199B2/en not_active Expired - Lifetime
- 2002-06-28 EP EP02749969A patent/EP1410425A4/en not_active Withdrawn
- 2002-06-28 KR KR10-2003-7016816A patent/KR20040015283A/ko not_active Application Discontinuation
- 2002-06-28 KR KR1020087027298A patent/KR20080104079A/ko not_active Application Discontinuation
- 2002-06-28 CA CA002447364A patent/CA2447364A1/en not_active Abandoned
- 2002-06-28 CN CNB028131851A patent/CN100355014C/zh not_active Expired - Lifetime
- 2002-06-28 WO PCT/US2002/022051 patent/WO2003003423A1/en active Application Filing
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103426708A (zh) * | 2012-05-17 | 2013-12-04 | 佳能株式会社 | 静电透镜的电极及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20040015283A (ko) | 2004-02-18 |
WO2003003423A1 (en) | 2003-01-09 |
US6753199B2 (en) | 2004-06-22 |
CA2447364A1 (en) | 2003-01-09 |
US20030071272A1 (en) | 2003-04-17 |
EP1410425A1 (en) | 2004-04-21 |
CN100355014C (zh) | 2007-12-12 |
KR20080104079A (ko) | 2008-11-28 |
EP1410425A4 (en) | 2009-12-09 |
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