CN1571182A - Capacitor type semiconductor pressure sensor - Google Patents
Capacitor type semiconductor pressure sensor Download PDFInfo
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- CN1571182A CN1571182A CN 03147270 CN03147270A CN1571182A CN 1571182 A CN1571182 A CN 1571182A CN 03147270 CN03147270 CN 03147270 CN 03147270 A CN03147270 A CN 03147270A CN 1571182 A CN1571182 A CN 1571182A
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- pressure sensor
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- condenser type
- semiconductor pressure
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Abstract
The invention is a capacitive semiconductor pressure sensor, mainly containing a plate capacitor composed of metal fixed electrode and a movable polycrystalline silicon diaphragm and arranged on a non-monocrystalline silicon substrate; and a thin film transistor (TFT) control circuit, connected to the plate capacitor to control operation for the pressure sensor.
Description
Technical field
The present invention relates to a kind of pressure sensor, especially a kind of condenser type semiconductor pressure sensor (capacitive semiconductor pressure sensor) that is manufactured on the non-monocrystalline silicon dielectric base is to save manufacturing cost.
Background technology
Air pressure or hydraulic measurement are considerable rings in the Industry Control.Generally speaking, commercial weight that pressure measures and method have many, at applied every field or special demands, and different designs method and consideration are arranged.The pressure sensor design method consists predominantly of pressure resistance type (piezoresistive), piezoelectric type (piezoelectric), condenser type (capacitive), potentiometer type, inductance bridge formula, strain gage at present, and semiconductor pressure sensor etc.Wherein, because capacitance pressure transducer, has high sensitivity, and advantage such as be difficult for being affected by the external environment, on market, attracted attention gradually.
In addition, because significantly dwindling of various pressure sensor dimensions aspect, and technology, assembling and operational restriction, a kind of new micro-processing technology (micromachining technology), can be applicable to make various microsensors (microsensor) and microactrator (microactuator), and can constitute micro-system (microsystem) after integrating with microelectronic circuit, be commonly referred to as MEMS (micro electro mechanical system) (microelectro-mechanical system, MEMS).MEMS has microminiaturization, can make (batchproduction) advantage to reduce cost in batches, and can be manufactured in single to form (monolithic) element on the silicon wafer simultaneously with signal processing circuit, this is particularly important for transducer, because the faint output signal of transducer is processing and amplifying nearby, to avoid extraneous electromagnetic interference, and can utilize signal processing circuit mould/number conversion (analog-to-digital that goes ahead of the rest, A/D) after, be transported to CPU again, therefore can improve the signal reliability, reduce the burden of line number and central control system.Because significantly dwindling of size aspect reaches technology, assembling and operational restriction, utilizes the pressure sensor of MEMS manufacturing, all outstanding than traditional handicraft on its sensitivity and the manufacturing cost, development in recent years is quite quick.
Please refer to Fig. 1, Fig. 1 is the generalized section of known condenser type semiconductor pressure sensor 10.As shown in Figure 1, known pressure sensor 10 consists predominantly of semiconductor substrate (semiconductorsubstrate) 12, for example a monocrystal silicon substrate or silicon-coated insulated (silicon on insulator, a SOI) substrate; One epitaxial silicon barrier film (epitaxial-silicon diaphragm) 14; One epitaxial silicon pedestal (base) 14 is located at at semiconductor-based the end 12, is used for fixing the two ends of barrier film 14, makes barrier film 14 and form an airtight depression (sealed cavity) 18 at the semiconductor-based end 12; And a doped region (doped region) 20, be located at at the semiconductor-based end 12 of barrier film 14 belows.Generally speaking, barrier film 14 is used for being used as a top electrode or movable (movable) electrode, and doped region 20 is used for being used as a bottom electrode or fixing (stationary) electrode, and barrier film 14 constitutes a capacity plate antenna (plate capacitor) with doped region 20.In addition, known pressure sensor 10 includes a control circuit in addition, a CMOS (Complementary Metal Oxide Semiconductor) (complementary metal-oxide semiconductor for example, CMOS) control circuit 22, be located on the pedestal 16 or at the semiconductor-based end 12, and be electrically connected on this capacity plate antenna, mainly be to be used for receiving, handling and to transmit the signal that this capacity plate antenna is exported.
When a testing pressure puts on barrier film 14, or when the inside and outside of barrier film 14 has a pressure differential, the central portion branch pressurized of barrier film 14 and produce deformation, and change the capacitance of this capacity plate antenna simultaneously, therefore pressure sensor 10 can utilize CMOS control circuit 22 to detect the static capacity of this capacity plate antenna (electrostatic capacitance) variable quantity, to obtain the variation of pressure.The calculation equation of the capacitance of this capacity plate antenna is C=μ A/d, wherein μ is the dielectric constant values of institute's packing material in the airtight depression 18, A is the area of dull and stereotyped (being barrier film 14 or doped region 20), and d is the distance between dull and stereotyped (being barrier film 14 and doped region 20), and this capacitance change (Δ C=C-C
0) with the pass of pressure be F=PA=kd
0(Δ C)/C
0, wherein F is the suffered elastic force of transducer 10, k is a spring ratio, d
0Be the initial distance between the flat board, C
0Initial capacitance value for capacity plate antenna.It should be noted that, can not remain certain value if be filled in the dielectric constant values of the material in the airtight depression 18, then in the process of gaging pressure, pressure sensor 10 can't normally be operated, and therefore the inside of airtight depression 20 is that vacuum is the optimum measurement state.In addition, because the capacitance of this capacity plate antenna is only relevant with physical parameter (physical parameters), therefore can use to have low thermal coefficient of expansion the material of (thermal expansioncoefficient) forms pressure sensing element to obtain the preferable pressure sensor of sensitivity 10.
Yet the semiconductor-based end 12 of known condenser type semiconductor pressure sensor 10, barrier film 14 all include monocrystalline silicon or epitaxial silicon with the material of pedestal 16, though it is higher to record the sensitivity of pressure, but because silicon wafer (silicon wafer) is higher with the cost that forms silicon epitaxial layers, for pressure sensing element with keen competition market, how producing lower and product quality better of cost is a present important problem.
Summary of the invention
The condenser type semiconductor pressure sensor that provides a kind of manufacturing cost lower is provided main purpose of the present invention.
Disclosed a kind of condenser type semiconductor pressure sensor in a preferred embodiment of the invention, it includes a non-monocrystalline silicon substrate; One can conduct electricity movable polysilicon barrier film (conductive movablepolysilicon diaphragm); One polysilicon supporting member (supporter) is located in this non-monocrystalline silicon substrate, is used for fixing the two ends of this polysilicon barrier film, makes to form an airtight depression between this polysilicon barrier film and this non-monocrystalline silicon substrate; One fixed electrode (stationary electrode) is located in this non-monocrystalline silicon substrate of this polysilicon barrier film below, and this fixed electrode and this polysilicon barrier film constitute a capacity plate antenna; And one thin-film transistor (thin film transistor, TFT) control circuit are located in this non-monocrystalline silicon substrate, and are electrically connected on this capacity plate antenna.
Because condenser type semiconductor pressure sensor of the present invention is to be manufactured in the non-monocrystalline silicon substrate, for example on substrate of glass or the quartz substrate, therefore can significantly save raw-material cost.In addition, the present invention utilizes polysilicon to form integrated barrier film and its supporting member, not only can cut down finished cost, and be fit to produce to meet market price demand in a large number.
Description of drawings
Fig. 1 is the generalized section of known condenser type semiconductor pressure sensor;
Fig. 2 is the generalized section of condenser type semiconductor pressure sensor of the present invention.
Embodiment
Please refer to Fig. 2, Fig. 2 is the generalized section of condenser type semiconductor pressure sensor 30 of the present invention.As shown in Figure 2, pressure sensor 30 of the present invention consists predominantly of a non-monocrystalline silicon substrate 32; One can conduct electricity movable polysilicon barrier film 34; One polysilicon supporting member (supporter) 36 is located in the non-monocrystalline silicon substrate 32, is used for fixing the two ends of polysilicon barrier film 34, makes to form an airtight depression 38 between polysilicon barrier film 34 and the non-monocrystalline silicon substrate 32; One fixed electrode 40 is located in the non-monocrystalline silicon substrate 32 of polysilicon barrier film 34 belows, and polysilicon barrier film 34 and fixed electrode 40 are used for being used as the upper/lower electrode of the capacity plate antenna of pressure sensor 30 respectively; And a control circuit, for example (thinfilm transistor, TFT) control circuit 42, are located in the non-monocrystalline silicon substrate 32, and are electrically connected on this capacity plate antenna, are used for receiving, handling and transmit the signal that this capacity plate antenna is exported for a thin-film transistor.
Similarly, the operating principle of condenser type semiconductor pressure sensor 30 of the present invention mainly is to utilize polysilicon barrier film 34 to be used as sensing element, when a testing pressure imports and puts on the polysilicon barrier film 34, when making polysilicon barrier film 34 pressurizeds, its middle body can be because of stressed depressed deformation, and and the variation of 40 generations of fixed electrode relative position, change the capacitance in this capacity plate antenna simultaneously, so can obtain the testing pressure value by measuring capacitance variation.
In a preferred embodiment of the invention, non-monocrystalline silicon substrate 32 is to be made by glass (glass), and because the fusing point of glass is lower, TFT control circuit 42 for fear of follow-up formation impacts non-monocrystalline silicon substrate 32 because of temperature is too high, therefore TFT control circuit 42 of the present invention is required to be a low temperature polycrystalline silicon (low temperature polysilicon, LTPS) TFT control circuit.Yet the present invention is not limited thereto, and non-monocrystalline silicon substrate 32 of the present invention also can be made by quartz, because quartzy fusing point is higher, therefore TFT control circuit 42 of the present invention also can be a high temperature polysilicon TFT control circuit.In addition, polysilicon barrier film 34 of the present invention can be one-body molded with polysilicon supporting member 36, also can separately make, polysilicon barrier film 34 also can mix a little alloy (dopants) in addition to reduce its resistance, increase conductivity, and fixed electrode 40 can be made by aluminium (Al), titanium (Ti), platinum (Pt) or alloy material.
It should be noted that, in a preferred embodiment of the invention, control circuit 42 is located on the substrate of glass 32, and the present invention's application is not limited thereto, and control circuit 42 of the present invention also can be located at a printed circuit board (PCB) (printed circuit board, PCB, be not shown among Fig. 2) on, utilize a flexible print wiring board (flexible printed circuit board, FPC board is not shown among Fig. 2) to be electrically connected control circuit 42 and this capacity plate antenna again.In addition, control circuit 42, for example include a plurality of integrated circuit (IC) chip (integrated circuit chip, IC chip) and also can directly be located on the flexible print wiring board, utilize this flexible print wiring board to be electrically connected control circuit 42 and this capacity plate antenna again.Moreover, non-monocrystalline silicon substrate of the present invention 32 surfaces can include a TFT viewing area (display area in addition, be not shown among Fig. 2), be used for showing the change value of pressure that condenser type semiconductor pressure sensor 30 of the present invention is detected, to make things convenient for the user to observe and to measure.
In sum, compare with known condenser type semiconductor pressure sensor, condenser type semiconductor pressure sensor of the present invention is to be manufactured in the non-monocrystalline silicon substrate, for example on substrate of glass or the quartz substrate, therefore can significantly save raw-material cost.In addition, the present invention utilizes polysilicon to form barrier film and its supporting member, also can cut down finished cost, and not only is fit to a large amount of production meeting market price demand, and can avoids the complicated technology of known formation silicon epitaxial layers and parameter to control.Moreover the course of processing of condenser type semiconductor pressure sensor of the present invention can form the thin-film transistor in TFT control circuit and the TFT viewing area simultaneously, therefore can effectively integrate procedure of processing, reaches the effect that reduces procedure of processing.
The above only is the preferred embodiments of the present invention, and all equalizations of doing according to claim of the present invention change and modification, all should belong to the covering scope of patent of the present invention.
Claims (22)
1. a condenser type semiconductor pressure sensor (capacitive semiconductor pressuresensor), it includes:
One non-monocrystalline silicon substrate;
One can conduct electricity movable polysilicon barrier film (conductive movable polysilicondiaphragm);
One polysilicon supporting member (supporter) is located in this non-monocrystalline silicon substrate, is used for fixing the two ends of this polysilicon barrier film, makes to form an airtight depression (sealed cavity) between this polysilicon barrier film and this non-monocrystalline silicon substrate;
One fixed electrode (stationary electrolde) is located in this non-monocrystalline silicon substrate of this polysilicon barrier film below, and this fixed electrode and this polysilicon barrier film constitute a capacity plate antenna (plate capacitor); And
One thin-film transistor (be located in this non-monocrystalline silicon substrate, and be electrically connected on this capacity plate antenna by thin film transistor, TFT) control circuit.
2. condenser type semiconductor pressure sensor as claimed in claim 1, wherein this non-monocrystalline silicon substrate is a substrate of glass.
3. condenser type semiconductor pressure sensor as claimed in claim 2, wherein this thin-film transistor control circuit is a low temperature polycrystalline silicon (low temperature polysilicon, LTPS) a thin-film transistor control circuit.
4. condenser type semiconductor pressure sensor as claimed in claim 1, wherein this non-monocrystalline silicon substrate is a quartz substrate.
5. condenser type semiconductor pressure sensor as claimed in claim 4, wherein this thin-film transistor control circuit is a high temperature polysilicon (high temperature polysilicon, HTPS) a thin-film transistor control circuit.
6. condenser type semiconductor pressure sensor as claimed in claim 1, wherein this fixed electrode includes aluminium (Al), titanium (Ti), platinum (Pt) or alloy material.
7. condenser type semiconductor pressure sensor as claimed in claim 1, wherein this polysilicon barrier film and this polysilicon supporting member are integrated.
8. condenser type semiconductor pressure sensor as claimed in claim 1, wherein this polysilicon barrier film is (doped) polysilicon barrier film that mixed.
9. condenser type semiconductor pressure sensor as claimed in claim 1, wherein this non-monocrystalline silicon substrate surface includes a thin-film transistor viewing area in addition, is used for showing the change value of pressure that this condenser type semiconductor pressure sensor is detected.
10. a condenser type semiconductor pressure sensor (capacitive semiconductor pressuresensor), it includes:
One dielectric base;
One can conduct electricity movable barrier film (conductive movable diaphragm);
One supporting member (supporter) is located on this dielectric base, is used for fixing the two ends of this barrier film, makes to form an airtight depression (sealed cavity) between this barrier film and this dielectric base;
One fixed electrode (electrode) is located on this dielectric base of this barrier film below; And
One control circuit is electrically connected on this barrier film and this fixed electrode.
11. condenser type semiconductor pressure sensor as claimed in claim 10, wherein this fixed electrode includes aluminium (Al), titanium (Ti), platinum (Pt) or alloy material.
12. condenser type semiconductor pressure sensor as claimed in claim 10, wherein this barrier film and this supporting member are integrated.
13. condenser type semiconductor pressure sensor as claimed in claim 12, wherein this supporting member includes polysilicon (polysilicon).
14. condenser type semiconductor pressure sensor as claimed in claim 13, wherein this barrier film includes (doped) polysilicon that mixes.
15. condenser type semiconductor pressure sensor as claimed in claim 10, wherein this barrier film includes the electric conducting material of low-resistance value.
16. condenser type semiconductor pressure sensor as claimed in claim 10, wherein this dielectric base is a substrate of glass.
17. condenser type semiconductor pressure sensor as claimed in claim 16, wherein this control circuit is located on this substrate of glass, and this control circuit includes a low-temperature polysilicon film transistor (lowtemperature polysilicon thin film transistor, LTPS TFT) control circuit.
18. condenser type semiconductor pressure sensor as claimed in claim 10, wherein this dielectric base is a quartz substrate.
19. condenser type semiconductor pressure sensor as claimed in claim 18, wherein this control circuit is located on this quartz substrate, and this control circuit includes a high temperature polysilicon thin-film transistor (hightemperature polysilicon thin film transistor, HTPS TFT) control circuit.
20. condenser type semiconductor pressure sensor as claimed in claim 10, wherein this control circuit is located at a printed circuit board (PCB) (printed circuit board, PCB) on, and this control circuit utilizes a flexible print wiring board (flexible printed circuit board, FPC board) to be electrically connected with this fixed electrode and this barrier film.
21. condenser type semiconductor pressure sensor as claimed in claim 10, wherein this control circuit is located on the flexible print wiring board, and this control circuit utilizes this flexible print wiring board to be electrically connected with this fixed electrode and this barrier film.
22. condenser type semiconductor pressure sensor as claimed in claim 10, wherein this dielectric base surface includes a thin-film transistor viewing area in addition, is used for showing the change value of pressure that this condenser type semiconductor pressure sensor is detected.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031472702A CN100367527C (en) | 2003-07-11 | 2003-07-11 | Capacitor type semiconductor pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031472702A CN100367527C (en) | 2003-07-11 | 2003-07-11 | Capacitor type semiconductor pressure sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1571182A true CN1571182A (en) | 2005-01-26 |
| CN100367527C CN100367527C (en) | 2008-02-06 |
Family
ID=34471885
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB031472702A Expired - Lifetime CN100367527C (en) | 2003-07-11 | 2003-07-11 | Capacitor type semiconductor pressure sensor |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101233400B (en) * | 2005-08-10 | 2011-05-04 | 堀场斯泰克株式会社 | Diaphragm mounting structure of electrostatic capacitance type pressure gauge |
| CN103575453A (en) * | 2012-07-31 | 2014-02-12 | 飞思卡尔半导体公司 | Capacitive pressure sensor in an overmolded package |
| CN101970339B (en) * | 2007-12-05 | 2014-04-16 | 芬兰技术研究中心 | Device for measuring pressure, variation in acoustic pressure, a magnetic field, acceleration, vibration, or the composition of a gas |
| CN104364627A (en) * | 2012-02-03 | 2015-02-18 | 迪特尔·内格勒-普赖斯曼 | Capacitive pressure sensor and a method of fabricating the same |
| CN104614119A (en) * | 2013-11-05 | 2015-05-13 | 中芯国际集成电路制造(上海)有限公司 | Pressure sensor and forming method thereof |
| CN104677528A (en) * | 2015-03-13 | 2015-06-03 | 中国电子科技集团公司第二十四研究所 | Capacitive pressure sensor and preparation method thereof |
| CN104990648A (en) * | 2015-07-28 | 2015-10-21 | 京东方科技集团股份有限公司 | Pressure sensor and pressure detecting method thereof, and pressure detecting apparatus |
| WO2015169249A1 (en) * | 2014-05-09 | 2015-11-12 | 无锡华润上华半导体有限公司 | Capacitive pressure sensor and manufacturing method therefor |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5706565A (en) * | 1996-09-03 | 1998-01-13 | Delco Electronics Corporation | Method for making an all-silicon capacitive pressure sensor |
| JP3994531B2 (en) * | 1998-07-21 | 2007-10-24 | 株式会社デンソー | Manufacturing method of semiconductor pressure sensor |
| JP2002250665A (en) * | 2001-02-23 | 2002-09-06 | Omron Corp | Capacitance-type sensor and its manufacturing method |
-
2003
- 2003-07-11 CN CNB031472702A patent/CN100367527C/en not_active Expired - Lifetime
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101233400B (en) * | 2005-08-10 | 2011-05-04 | 堀场斯泰克株式会社 | Diaphragm mounting structure of electrostatic capacitance type pressure gauge |
| CN101970339B (en) * | 2007-12-05 | 2014-04-16 | 芬兰技术研究中心 | Device for measuring pressure, variation in acoustic pressure, a magnetic field, acceleration, vibration, or the composition of a gas |
| CN104364627A (en) * | 2012-02-03 | 2015-02-18 | 迪特尔·内格勒-普赖斯曼 | Capacitive pressure sensor and a method of fabricating the same |
| CN103575453A (en) * | 2012-07-31 | 2014-02-12 | 飞思卡尔半导体公司 | Capacitive pressure sensor in an overmolded package |
| CN104614119A (en) * | 2013-11-05 | 2015-05-13 | 中芯国际集成电路制造(上海)有限公司 | Pressure sensor and forming method thereof |
| CN104614119B (en) * | 2013-11-05 | 2017-11-28 | 中芯国际集成电路制造(上海)有限公司 | Pressure sensor and forming method thereof |
| WO2015169249A1 (en) * | 2014-05-09 | 2015-11-12 | 无锡华润上华半导体有限公司 | Capacitive pressure sensor and manufacturing method therefor |
| CN105092111A (en) * | 2014-05-09 | 2015-11-25 | 无锡华润上华半导体有限公司 | Capacitive pressure sensor and manufacturing method thereof |
| CN104677528A (en) * | 2015-03-13 | 2015-06-03 | 中国电子科技集团公司第二十四研究所 | Capacitive pressure sensor and preparation method thereof |
| CN104677528B (en) * | 2015-03-13 | 2017-02-01 | 中国电子科技集团公司第二十四研究所 | Capacitive pressure sensor and preparation method thereof |
| CN104990648A (en) * | 2015-07-28 | 2015-10-21 | 京东方科技集团股份有限公司 | Pressure sensor and pressure detecting method thereof, and pressure detecting apparatus |
| CN104990648B (en) * | 2015-07-28 | 2018-06-01 | 京东方科技集团股份有限公司 | A kind of pressure sensor and its pressure detection method and pressure-detecting device |
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| Publication number | Publication date |
|---|---|
| CN100367527C (en) | 2008-02-06 |
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