CN210071211U - Double-ridge capacitance type MEMS differential pressure sensor - Google Patents
Double-ridge capacitance type MEMS differential pressure sensor Download PDFInfo
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- CN210071211U CN210071211U CN201920737844.2U CN201920737844U CN210071211U CN 210071211 U CN210071211 U CN 210071211U CN 201920737844 U CN201920737844 U CN 201920737844U CN 210071211 U CN210071211 U CN 210071211U
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- 239000003990 capacitor Substances 0.000 claims description 22
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- 230000035945 sensitivity Effects 0.000 abstract description 16
- 238000005259 measurement Methods 0.000 description 5
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Abstract
The utility model provides a two spine capacitanc MEMS differential pressure sensor, two spine capacitanc MEMS include the basement, set up lower spine, sensitive membrane and the last spine of basement top go up the spine with all be provided with the bleeder vent on the lower spine, wherein, sensitive membrane sets up go up the spine with between the lower spine, go up the spine with the lower spine is used for supporting fixedly sensitive membrane, wherein, go up the spine sensitive membrane with lower spine forms two sensitive electric capacity of opposite direction. The MEMS that utilizes originally novel, can solve traditional capacitanc differential pressure sensor has the low problem of sensitivity.
Description
Technical Field
The utility model relates to a sensor technology field, more specifically relates to a two spine capacitanc MEMS differential pressure sensor.
Background
With the rise of wearable products such as watches, bracelets, differential pressure sensors have become its indispensable standard and match devices for measuring the pressure difference of the product position. The MEMS of the traditional differential pressure sensor mainly adopts a capacitance type and a piezoresistive type, wherein the MEMS of the piezoresistive differential pressure sensor has the defects of large temperature drift and low precision, and the MEMS of the capacitance type differential pressure sensor has the defect of low sensitivity.
There is the shortcoming that sensitivity is low in order to solve traditional capacitanc differential pressure sensor's MEMS, the utility model provides a two spine capacitanc MEMS differential pressure sensor.
SUMMERY OF THE UTILITY MODEL
In view of the above, it is an object of the present invention to provide a dual-ridge capacitive MEMS differential pressure sensor to solve the problem of low sensitivity of the MEMS of the conventional capacitive differential pressure sensor.
The utility model provides a double-ridge capacitance MEMS differential pressure sensor, which comprises a double-ridge capacitance MEMS, wherein the double-ridge capacitance MEMS comprises a substrate, a lower ridge arranged above the substrate, a sensitive membrane and an upper ridge, air holes are arranged on the upper ridge and the lower ridge, wherein,
the sensitive membrane is arranged between the upper ridge and the lower ridge, the upper ridge and the lower ridge are used for supporting and fixing the sensitive membrane, wherein,
the upper ridge, the sensitive film and the lower ridge form two sensitive capacitors in opposite directions.
Further, it is preferable that the upper ridge be an upper pressure end and the lower ridge be a lower pressure end, wherein,
the difference between the upper pressure end and the lower pressure end is a pressure difference.
Further, it is preferable that the deformation of the sensitive membrane is formed by the pressure difference, and the distance between the sensitive membrane and the upper and lower ridges is changed, wherein,
the capacitance variation of the upper end sensitive capacitor is as follows:
the capacitance variation of the lower end sensitive capacitor is as follows:
wherein △ d is the deformation quantity of the sensitive film;
d is the distance of the capacitor plate;
s is the area of the polar plate;
εris the dielectric constant of the interpolar medium.
Further, it is preferable that the pressure of the upper pressure side is P1 and the pressure of the lower pressure side is P2, wherein,
the pressure difference △ P-P1-P2;
from the series voltage division of the capacitors, △ P ∈ 2 Δ d can be obtained.
In addition, the double-ridge capacitance type MEMS differential pressure sensor preferably comprises a packaging structure formed by a shell and a substrate, wherein the double-ridge capacitance type MEMS is arranged in the packaging structure, an ASIC chip is also arranged in the packaging structure, wherein,
the dual-ridge capacitive MEMS is electrically connected with the ASIC chip.
In addition, it is preferable that a pad is provided on the substrate, and the dual-ridge capacitive MEMS is electrically connected to the ASIC chip through the pad.
According to the above technical scheme, the utility model provides a two spine capacitanc MEMS differential pressure sensor, through adopting two spine capacitanc MEMS to increase differential pressure sensor's sensitivity, promptly: the method comprises the following steps that a lower ridge, a sensitive film and an upper ridge are arranged on a substrate of the double-ridge capacitive MEMS, the sensitive film is fixedly supported by the upper ridge and the lower ridge, and the upper ridge, the sensitive film and the lower ridge form two sensitive capacitors in opposite directions, so that the sensitivity of the double-ridge capacitive MEMS can be doubled compared with the sensitivity of a single capacitor, and higher measurement accuracy is achieved; and meanwhile, the upper ridge and the lower ridge which are arranged on the upper side and the lower side of the sensitive membrane are respectively provided with the air holes, so that the influence of the foreign body degree on the sensitive membrane can be effectively reduced, and the requirement of the differential pressure sensor on the service environment is reduced.
Drawings
Other objects and results of the present invention will become more apparent and more readily appreciated as the same becomes better understood by reference to the following description and appended claims, taken in conjunction with the accompanying drawings. In the drawings:
fig. 1 is a schematic diagram of a MEMS structure of a dual-ridge capacitive MEMS differential pressure sensor in accordance with an embodiment of the present invention;
fig. 2 is a schematic diagram of a dual-ridge capacitive MEMS differential pressure sensor according to an embodiment of the present invention.
Wherein the reference numerals include: 1. upper ridge 2, sensitive film 3, lower ridge 4, substrate 5, bonding pad 6 and air holes.
The same reference numbers in all figures indicate similar or corresponding features or functions.
Detailed Description
Because the structure to aforementioned current capacitanc differential pressure sensor who proposes, the capacitanc differential pressure sensor sensitivity of this kind of structure is low and leads to differential pressure sensor's measurement accuracy low problem, the utility model provides a two ridge capacitanc MEMS differential pressure sensor increases differential pressure sensor's sensitivity through the MEMS that adopts two ridge capacitanc, and the sensitivity of this kind of two ridge capacitanc MEMS's of this kind of structural design sensitivity relative ratio single capacitance can promote one time to reach higher measurement accuracy, improve differential pressure sensor's performance.
Specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.
To illustrate the structure of the dual-ridge capacitive MEMS differential pressure sensor provided by the present invention, fig. 1 and 2 respectively illustrate the structure of the dual-ridge capacitive MEMS differential pressure sensor from different angles. Specifically, fig. 1 shows a MEMS structure one of a dual-ridge capacitive MEMS differential pressure sensor according to an embodiment of the present invention; fig. 2 shows a two-ridge capacitive MEMS differential pressure sensor structure according to an embodiment of the present invention.
As shown in fig. 1 and fig. 2 jointly, the utility model provides a two spine capacitive MEMS differential pressure sensor are poor, including two spine capacitive MEMS, two spine capacitive MEMS include basement 4, set up the lower spine 3 in basement 4 top, sensitive membrane 2 and last spine 1, and wherein, sensitive membrane 2 sets up between spine 1 and the lower spine 3, all is provided with bleeder vent 6 on last spine 1 and the lower spine 3, and sensitive membrane 2 passes through last spine 1 and lower spine 3 fixed stay to go up spine 1, sensitive membrane 2 and lower spine 3 form two sensitive electric capacity of opposite direction.
Wherein, sensitive membrane 2 is established between last back 1 and lower back 3, and last back 1 and lower back 3 are the support fixed knot who supports sensitive membrane 2 and construct, owing to all be provided with bleeder vent 6 on last back 1 and lower back 3, when ambient pressure changes, can not cause the deformation of last back 1 and lower back 3.
Furthermore, between the upper ridge 1 and the lower ridge 3 a sensitive membrane 2 is arranged, namely: the sensitive membrane 2 is located on the fretwork between ridge 1 and the lower ridge 3, can prevent that external foreign matter from falling on sensitive membrane 2, can effectively reduce the influence that the foreign matter degree led to the fact the sensitive membrane to differential pressure sensor's requirement to service environment has been reduced.
In the embodiment of the present invention, the sensitive membrane 2 is a complete membrane structure, the upper back, 1 is used as the upper pressure end, and the lower back 3 is used as the lower pressure end, wherein the difference between the upper pressure end and the lower pressure end is the pressure difference. The deformation of the sensitive membrane 2 is formed by the pressure difference and the distance between the sensitive membrane 2 and the upper and lower ridges 1, 3 is changed, wherein,
the capacitance variation of the upper end sensitive capacitor is as follows:
the capacitance variation of the lower end sensitive capacitor is as follows:
wherein △ d is the deformation of the sensitive film, d is the distance of the capacitor plate, s is the plate area, and epsilonrIs the dielectric constant of the interpolar medium.
Specifically, when the pressure at the upper pressure end is P1, the pressure at the lower pressure end is P2, and the pressure difference △ P is P1-P2, and the measured pressure difference △ P is P1-P2, the sensitive film 2 is deformed, so that the distance between the sensitive film 2 and the upper ridge 1 and the lower ridge 3 is changed, and the capacitance change amount at the upper end is changed
Cause the variation of the lower capacitance
Wherein △ d is deformation of sensitive membrane, and can be obtained by series voltage division of capacitor
According to the structure of the double-ridge capacitor type MEMS, the sensitivity of the double-ridge capacitor type MEMS can be doubled compared with the sensitivity of a single capacitor, so that the double-ridge capacitor type MEMS differential pressure sensor reaches higher measurement precision, and the performance of the differential pressure sensor is improved.
The utility model discloses an in the embodiment, two ridge capacitanc MEMS differential pressure sensor include the packaging structure who is formed by casing and base plate, and wherein, two ridge capacitanc MEMS set up inside packaging structure, still are provided with the ASIC chip inside packaging structure, and wherein, two ridge capacitanc MEMS are connected with ASIC chip electricity.
Furthermore, in the embodiment of the present invention, a bonding pad 5 is provided on the substrate, and the dual-ridge capacitive MEMS is electrically connected to the ASIC chip through the bonding pad 5. In practical application, the base 4 can be set at a suitable position according to practical requirements. When the double-ridge capacitive MEMS is electrically connected with the ASIC chip, firstly, the double-ridge capacitive MEMS is welded with a bonding pad 5 of a substrate through a metal wire, and then an electric signal of the double-ridge capacitive MEMS is transmitted to the ASIC chip through the metal wire; the ASIC chip is electrically connected with the substrate through the metal wire, the electric signal of the ASIC chip is transmitted to the substrate, and the substrate transmits the signal to the outside, so that the pressure difference signal is obtained.
According to the above embodiment, the utility model provides a two spine capacitanc MEMS differential pressure sensor, through adopting two spine capacitanc MEMS to increase differential pressure sensor's sensitivity, promptly: the method comprises the following steps that a lower ridge, a sensitive film and an upper ridge are arranged on a substrate of the double-ridge capacitive MEMS, the sensitive film is fixedly supported by the upper ridge and the lower ridge, and the upper ridge, the sensitive film and the lower ridge form two sensitive capacitors in opposite directions, so that the sensitivity of the double-ridge capacitive MEMS can be doubled compared with the sensitivity of a single capacitor, and higher measurement accuracy is achieved; and meanwhile, the upper ridge and the lower ridge which are arranged on the upper side and the lower side of the sensitive membrane are respectively provided with the air holes, so that the influence of the foreign body degree on the sensitive membrane can be effectively reduced, and the requirement of the differential pressure sensor on the service environment is reduced.
A dual-ridge capacitive MEMS differential pressure sensor in accordance with the present invention has been described by way of example above with reference to the accompanying drawings. However, it will be appreciated by those skilled in the art that various modifications may be made to the dual-ridge capacitive MEMS differential pressure sensor as set forth above without departing from the scope of the invention. Therefore, the scope of the present invention should be determined by the content of the appended claims.
Claims (6)
1. A double-ridge capacitive MEMS differential pressure sensor is characterized by comprising a double-ridge capacitive MEMS, wherein the double-ridge capacitive MEMS comprises a substrate, a lower ridge arranged above the substrate, a sensitive membrane and an upper ridge, air holes are arranged on the upper ridge and the lower ridge respectively, wherein,
the sensitive membrane is arranged between the upper ridge and the lower ridge, the upper ridge and the lower ridge are used for supporting and fixing the sensitive membrane, wherein,
the upper ridge, the sensitive film and the lower ridge form two sensitive capacitors in opposite directions.
2. The dual-ridge capacitive MEMS differential pressure sensor of claim 1,
the upper ridge acting as an upper pressure end and the lower ridge acting as a lower pressure end, wherein,
the difference between the upper pressure end and the lower pressure end is a pressure difference.
3. The dual-ridge capacitive MEMS differential pressure sensor of claim 2,
the deformation of the sensitive membrane is formed by the pressure difference and the distance between the sensitive membrane and the upper and lower ridges changes, wherein,
the capacitance variation of the upper end sensitive capacitor is as follows:
the capacitance variation of the lower end sensitive capacitor is as follows:
wherein △ d is the deformation quantity of the sensitive film;
d is the distance of the capacitor plate;
s is the area of the polar plate;
εris the dielectric constant of the interpolar medium.
4. The dual-ridge capacitive MEMS differential pressure sensor of claim 3,
the pressure at the upper pressure end is P1, the pressure at the lower pressure end is P2, wherein,
the pressure difference △ P-P1-P2;
from the series voltage division of the capacitors, △ P ∈ 2 Δ d can be obtained.
5. The dual-ridge capacitive MEMS differential pressure sensor of claim 1,
the double-ridge capacitive MEMS differential pressure sensor comprises a packaging structure formed by a shell and a substrate, wherein the double-ridge capacitive MEMS is arranged inside the packaging structure, an ASIC chip is also arranged inside the packaging structure, the double-ridge capacitive MEMS differential pressure sensor comprises a first substrate and a second substrate,
the dual-ridge capacitive MEMS is electrically connected with the ASIC chip.
6. The dual-ridge capacitive MEMS differential pressure sensor of claim 5,
and a bonding pad is arranged on the substrate, and the double-ridge capacitive MEMS is electrically connected with the ASIC chip through the bonding pad.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201920737844.2U CN210071211U (en) | 2019-05-21 | 2019-05-21 | Double-ridge capacitance type MEMS differential pressure sensor |
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| CN201920737844.2U CN210071211U (en) | 2019-05-21 | 2019-05-21 | Double-ridge capacitance type MEMS differential pressure sensor |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115655534A (en) * | 2022-10-31 | 2023-01-31 | 歌尔微电子股份有限公司 | Pressure sensor and method for manufacturing pressure sensor |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115655534A (en) * | 2022-10-31 | 2023-01-31 | 歌尔微电子股份有限公司 | Pressure sensor and method for manufacturing pressure sensor |
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Effective date of registration: 20200612 Address after: 266104 room 103, 396 Songling Road, Laoshan District, Qingdao, Shandong Province Patentee after: Goer Microelectronics Co.,Ltd. Address before: 266100 Qingdao, Laoshan District, North House Street investment service center room, Room 308, Shandong Patentee before: GOERTEK TECHNOLOGY Co.,Ltd. |