CN107089640B - MEMS chip and preparation method thereof - Google Patents
MEMS chip and preparation method thereof Download PDFInfo
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- CN107089640B CN107089640B CN201710301081.2A CN201710301081A CN107089640B CN 107089640 B CN107089640 B CN 107089640B CN 201710301081 A CN201710301081 A CN 201710301081A CN 107089640 B CN107089640 B CN 107089640B
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- 238000002360 preparation method Methods 0.000 title abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 46
- 239000000463 material Substances 0.000 claims abstract description 32
- 238000000151 deposition Methods 0.000 claims description 28
- 238000010438 heat treatment Methods 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 13
- 238000005530 etching Methods 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 4
- 238000005259 measurement Methods 0.000 claims description 3
- 239000002210 silicon-based material Substances 0.000 claims description 2
- 238000004806 packaging method and process Methods 0.000 abstract description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 230000008021 deposition Effects 0.000 description 5
- 230000010354 integration Effects 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000012536 packaging technology Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011540 sensing material Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/04—Networks or arrays of similar microstructural devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00214—Processes for the simultaneaous manufacturing of a network or an array of similar microstructural devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/12—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in capacitance, i.e. electric circuits therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
- G01N27/128—Microapparatus
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
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- Chemical Kinetics & Catalysis (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
The invention discloses an MEMS chip and a preparation method thereof. The MEMS chip is integrated with a gas pressure sensing part and a gas sensing part of the shared substrate, wherein the gas pressure sensing part comprises a lower electrode, a supporting part and an upper electrode, and the gas sensing part comprises a measuring electrode and a sensitive material film; the lower electrode and the measuring electrode are arranged on the upper end surface of the substrate in a non-contact manner, the upper electrode is supported on the lower electrode through the supporting part, and the lower electrode, the supporting part and the upper electrode form a plate capacitance sensor for measuring air pressure; the measuring electrode is provided with a sensitive material film exposed outside, and the measuring electrode and the sensitive material film form a resistance sensor for measuring the gas type and concentration. According to the invention, the flat capacitive sensor and the resistance sensor are arranged on the same side end face of the shared substrate, so that the flat capacitive sensor and the resistance sensor can be prepared on the same chip, the size of the MEMS chip is reduced, the two sensors on the MEMS chip can conveniently share one ASIC chip, and the packaging and the application are facilitated.
Description
Technical Field
The invention relates to the field of sensor measurement, in particular to an MEMS chip and a preparation method thereof.
Background
One of the development directions of sensors integrated with consumer electronics is miniaturization and multifunctionality, and sensor combination is a good development direction. Currently, the combination of sensors is limited to packaging two or more MEMS die combinations together, such as combining a pressure sensor and a gas sensor to form a gas pressure combined MEMS die.
Most of the gas pressure combined MEMS chips are prepared on the same silicon wafer, namely, the pressure sensor and the gas sensor are respectively prepared on the front side and the back side of the same silicon wafer and are used for simultaneously measuring the gas pressure and the gas. The combined sensor has higher requirements on packaging technology, the conventional planar mounting technology is difficult to meet the packaging requirements of the combined sensor, advanced packaging technologies such as Flip Chip (FC) and the like are needed, the packaging difficulty is increased, and the front and back structures also enable the two sensors to not share one ASIC Chip (special application circuit), so that inconvenience is brought to circuit design of customers.
Disclosure of Invention
Based on one purpose of the invention, the invention provides a MEMS chip to solve the problems of high packaging difficulty of the existing combined sensor and inconvenience to the circuit design of customers.
In order to achieve the above purpose, the technical scheme of the invention is realized as follows:
in one aspect, the present invention provides a MEMS chip, integrated with a gas pressure sensing part and a gas sensing part, the gas pressure sensing part and the gas sensing part sharing a substrate 1, the gas pressure sensing part comprising a lower electrode 3, a support part 4 and a gas pressure sensitive upper electrode 5, the gas sensing part comprising a measuring electrode 12 and a gas sensitive material film 13;
the lower electrode 3 and the measuring electrode 12 are arranged on the upper end surface of the substrate 1 without contacting each other, the upper electrode 5 is supported on the lower electrode 3 through the supporting part 4, and the lower electrode 3, the supporting part 4 and the upper electrode 5 form a plate capacitance sensor for measuring air pressure;
the measuring electrode 12 is provided with a sensitive material film 13 exposed outside, and the measuring electrode 12 and the sensitive material film 13 form a resistance sensor for measuring the gas concentration.
In another aspect, the present invention provides a method for manufacturing a MEMS chip, integrating a gas pressure sensing part and a gas pressure sensing part, the method comprising:
depositing a conductive material on a part of the area of the upper end face of the substrate to serve as a lower electrode of the air pressure sensing part, and depositing a measuring electrode for preparing the air pressure sensing part on the other part of the area of the upper end face;
depositing and etching an oxide layer on the lower electrode to serve as a supporting part of the air pressure sensing part, bonding an air pressure sensitive film on the supporting part to serve as an upper electrode of the air pressure sensing part, forming a cavity between the lower electrode and the upper electrode, and enabling the lower electrode, the supporting part and the upper electrode to form a plate capacitance sensor for measuring air pressure;
and depositing and preparing a sensitive material film which is exposed and sensitive to the gas concentration on the measuring electrode, so that the measuring electrode and the sensitive material film form a resistance sensor for measuring the gas type and concentration.
The beneficial effects of the invention are as follows: according to the invention, the flat capacitive sensor and the resistance sensor are arranged on the same side end face of the shared substrate, so that the flat capacitive sensor and the resistance sensor can be prepared on the same chip, the size of the MEMS chip is reduced, the integration level is improved, the two sensors on the MEMS chip can share one ASIC chip conveniently, and the packaging is convenient.
Drawings
FIG. 1 is a schematic diagram of a MEMS chip according to an embodiment of the present invention;
fig. 2 is a flowchart of a method for manufacturing a MEMS chip according to an embodiment of the present invention.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the present invention more apparent, the embodiments of the present invention will be described in further detail with reference to the accompanying drawings.
The following description of at least one exemplary embodiment is merely exemplary in nature and is in no way intended to limit the invention, its application, or uses. Techniques and equipment known to those of ordinary skill in the relevant art may not be discussed in detail, but should be considered part of the specification where appropriate.
The invention provides a MEMS chip, which is a combined MEMS chip of an air pressure sensing part and a gas sensing part, and comprises a shared substrate, and the air pressure sensing part and the gas sensing part which are formed on the same side of the substrate, so that the air pressure sensing part and the gas sensing part can be prepared on the same chip, the size of the MEMS chip is reduced, the integration level is improved, and two sensors on the MEMS chip can share one ASIC chip conveniently, so that the packaging is convenient.
Fig. 1 is a schematic structural diagram of a MEMS chip according to an embodiment of the present invention, as shown in fig. 1, the MEMS chip integrates a gas pressure sensing portion and a gas sensing portion, where the gas pressure sensing portion and the gas sensing portion share a substrate 1, and the gas pressure sensing portion includes a lower electrode 3, a supporting portion 4, and an upper electrode 5 sensitive to gas pressure; the gas sensing part comprises a measuring electrode 12 and a sensitive material film 13 sensitive to gas;
the lower electrode 3 and the measuring electrode 12 are arranged on the upper end surface of the substrate 1 without contacting each other, the upper electrode 5 is supported on the lower electrode 3 through the supporting part 4, and the lower electrode 3, the supporting part 4 and the upper electrode 5 form a plate capacitance sensor for measuring air pressure;
the measuring electrode 12 is provided with a sensitive material film 13 exposed outside, and the measuring electrode 12 and the sensitive material film 13 form a resistance sensor for measuring the gas concentration.
It should be understood that, in the embodiment, the upper end face and the lower end face of the substrate are opposite end faces, and the lower electrode 3 and the measuring electrode 12 are illustrated in fig. 1 as being disposed on the upper end face of the substrate 1 without contacting each other, and in practical application, the lower electrode 3 and the measuring electrode 12 may be disposed on the lower end face of the substrate 1 without contacting each other; in fig. 1, the lower electrode 3 and the measuring electrode 12 are shown by way of example to each occupy half the area of the upper end face; obviously, in practical application, the area of the upper end face of the substrate occupied by the lower electrode 3 and the measuring electrode 12 can be designed according to the needs, and the embodiment is not limited to this.
According to the embodiment, the flat capacitive sensor and the resistance sensor are arranged on the same side end face of the shared substrate, so that the flat capacitive sensor and the resistance sensor can be prepared on the same chip, the size of the MEMS chip is reduced, the integration level is improved, the two sensors on the MEMS chip can share one ASIC chip conveniently, and packaging is facilitated.
Specifically, the substrate 1 of the present embodiment may be made of a monocrystalline silicon material, and in order to insulate the substrate 1 from the plate capacitive sensor and the resistance sensor thereon, a first insulating layer and a second insulating layer are respectively disposed on opposite sides of the substrate 1; namely, a first insulating layer is arranged on the upper end face of the substrate 1 and is positioned between the upper end face of the substrate 1 and the lower electrode 3 and the measuring electrode 12; a second insulating layer is provided on the lower end face of the substrate 1.
The first insulating layer 2_1 and the second insulating layer 2_2 may be made of a silicon dioxide SiO2 material, a silicon nitride Si3N4 material, or the like, which are well known to those skilled in the art, and may be formed on the end surfaces of the two sides of the substrate 1 by deposition, and will not be described in detail herein.
As shown in fig. 1, a lower electrode 3 is disposed on the upper portion of the first insulating layer 2_1, an upper electrode 5 is located above the lower electrode 3 through a supporting portion 4, and a closed cavity 9 is defined by the upper electrode 5, the lower electrode 3 and the supporting portion 4, so that the upper electrode 5, the lower electrode 3 and the supporting portion 4 form a plate capacitance sensor capable of measuring the external gas pressure. The lower electrode 3 may be formed on the first insulating layer 2_1 by deposition, and an oxide layer (oxide layer material may be SiO2 material, si3N4 material, etc.) may be deposited and etched on the lower electrode 3 to form a support portion 4, and a flexible polysilicon material sensitive to air pressure may be bonded on the support portion 4 to form the upper electrode 5.
When the plate capacitance sensor receives external air pressure, the pressure sensitive film of the upper electrode 5 deforms, the distance between the two electrode plates of the plate capacitance sensor becomes small, the capacitance changes, the voltage of the electrode plates of the plate capacitance sensor changes, the air pressure is measured by measuring the voltage change, and finally, an electric signal representing the environmental pressure information can be output.
In order to lead out the electric signal of the lower electrode 3, the flat capacitive sensor of the invention is provided with a conductive part 8 in the supporting part 4, and illustratively, the supporting part 4 can be etched to form a through hole, the conductive part 8 is deposited in the through hole so as to lead out the electric signal of the lower electrode 3, and a bonding pad 7 is formed on the end surface of the supporting part 4; to draw out the electrical signal of the upper electrode 5, a pad 6 for drawing out the electrical signal of the upper electrode 5 is formed on the upper electrode 5. As shown in fig. 1, the MEMS sensor of the present invention further includes a measuring electrode 12 disposed on another portion of the first insulating layer 2_1 on the upper end surface of the substrate 1, and the measuring electrode 12 may be made of a material such as gold, platinum or platinum, which is well known to those skilled in the art, and may be formed on the first insulating layer 2_1 in a deposition manner. The measuring electrode 12 is provided with a sensitive material film 13 exposed outside, the measuring electrode 12 and the sensitive material film 13 form a resistance sensor for measuring the concentration of gas, so that the gas concentration information sensed by the sensitive material film 13 can be output by the measuring electrode 12 in an electric signal mode, a bonding pad 15 can be formed on the measuring electrode 12 as shown in fig. 1, and the electric signal of the measuring electrode 12 is led out through the bonding pad 15.
After sensing the information of the external gas concentration, the sensing material film 13 changes its own resistance, so that the resistance signal output by the measuring electrode 12 changes. The construction of such a resistance sensor and its working principle are well known to the person skilled in the art and will not be described in detail here.
Since the sensitivity of the resistance sensor of the present invention is affected by external factors such as temperature, humidity, etc. of the surrounding detection environment, the present invention provides a heating electrode 10 on a first insulating layer 2_1 and forms a third insulating layer 11 between the heating electrode 10 and a measuring electrode 12 in order to improve the sensitivity of the resistance sensor. Referring to fig. 1, the heating electrode 10, the measuring electrode 12, and the second insulating layer 11 may be obtained by layer-by-layer deposition and layer-by-layer etching, which are well known to those skilled in the art. Wherein, the heating electrode 10 can be made of polysilicon, platinum, tungsten, etc.
In order to lead out the electric signal of the heating electrode 10, the edges of the third insulating layer 11 protruding from both opposite ends of the heating electrode 10 may be provided to form corresponding protruding portions on which the pads 14 of the heating electrode 10 are formed. The working temperature of the resistance sensor is adjusted by heating the sensitive material film 13 through the heating electrode 10, so that the sensitive material film 13 is more sensitive to the gas in the surrounding environment, and the data detected by the resistance sensor is more accurate.
In order to avoid the influence on the plate capacitance sensor when the heating electrode 10 heats, a back cavity 1_1 opposite to the measuring electrode 12 is arranged on the side of the lower end surface of the substrate 1, so that the possibility that heat generated by the heating electrode 10 is transferred to the plate capacitance sensor through the substrate 1 is reduced, and the heat can be maximally restrained on the sensitive material film 13.
Corresponding to the embodiment of the MEMS chip, the invention also provides an embodiment of the preparation method of the MEMS chip, and the MEMS chip in the embodiment integrates the air pressure sensing part and the air sensing part.
Fig. 2 is a flowchart of a method for manufacturing a MEMS chip according to an embodiment of the present invention, as shown in fig. 2, where the method includes:
and S200, depositing a conductive material on one part of the area of the upper end face of the substrate to serve as a lower electrode of the air pressure sensing part, and depositing and preparing a measuring electrode of the air pressure sensing part on the other part of the area of the upper end face.
Preferably, the lower electrode and the measuring electrode are each designed to occupy half the area of the upper end face.
S210, depositing and etching an oxide layer on the lower electrode to serve as a supporting part of the air pressure sensing part, bonding an air pressure sensitive film on the supporting part to serve as an upper electrode of the air pressure sensing part, forming a cavity between the lower electrode and the upper electrode, and enabling the lower electrode, the supporting part and the upper electrode to form a plate capacitance sensor for measuring air pressure.
In one implementation, the method of the present embodiment further includes:
etching the supporting part to form a through hole communicated with the lower electrode, and filling the through hole with a conductive material to form a conductive part for leading out an electric signal of the lower electrode;
a pad communicating with the conductive portion is deposited on the end face of the support portion, and a pad for extracting an electric signal of the upper electrode 5 is deposited on the upper electrode.
S220, depositing and preparing a sensitive material film which is exposed to the outside and sensitive to gas on the measuring electrode, so that the measuring electrode and the sensitive material film form a resistance sensor for measuring the type and the concentration of the gas.
According to the embodiment, the flat capacitive sensor and the resistance sensor are arranged on the same side end face of the shared substrate, so that the flat capacitive sensor and the resistance sensor can be prepared on the same chip, the size of the MEMS chip is reduced, the integration level is improved, the two sensors on the MEMS chip can share one ASIC chip conveniently, and packaging is facilitated.
The substrate of this embodiment may be made of monocrystalline silicon, and the corresponding method in fig. 2 further includes:
depositing a first insulating layer on the upper end face of the substrate, and enabling the first insulating layer to be positioned between the upper end face of the substrate and the lower electrode and between the lower electrode and the measuring electrode; and depositing a second insulating layer on the lower end surface of the substrate;
correspondingly, the preparation of the measuring electrode by deposition on another partial region of the upper end face comprises:
depositing and preparing a heating electrode on the other part of the area, corresponding to the upper end face, of the first insulating layer, and depositing a third insulating layer on the heating electrode, so that the third insulating layer is positioned between the heating electrode and the measuring electrode; and preparing pads of the heating electrode on the protruding portions formed by protruding edges of the third insulating layer at both opposite ends of the heating electrode.
In order to avoid the influence on the plate capacitance sensor when the heating electrode heats, the method of the embodiment includes: and a back cavity opposite to the measuring electrode is formed on the side of the lower end surface of the substrate, so that the possibility that heat generated by the heating electrode is transferred to the flat capacitive sensor through the substrate is reduced, and the heat can be maximally restrained on the sensitive material film.
The specific implementation manner of each step in the method embodiment of the present invention may refer to the specific content of the MEMS chip embodiment of the present invention, and will not be described herein.
In order to clearly describe the technical solution of the embodiments of the present invention, in the embodiments of the present invention, the terms "first", "second", etc. are used to distinguish the same item or similar items having substantially the same function and effect, and those skilled in the art will understand that the terms "first", "second", etc. do not limit the number and execution order.
The foregoing is merely a specific embodiment of the invention and other modifications and variations can be made by those skilled in the art in light of the above teachings. It is to be understood by persons skilled in the art that the foregoing detailed description is provided for the purpose of illustrating the invention more fully, and that the scope of the invention is defined by the appended claims.
Claims (8)
1. A MEMS chip, characterized in that a gas pressure sensing part and a gas sensing part are integrated, the gas pressure sensing part and the gas sensing part share a substrate (1), the gas pressure sensing part comprises a lower electrode (3), a supporting part (4) and an upper electrode (5) sensitive to gas pressure, the gas sensing part comprises a measuring electrode (12) and a sensitive material film (13) sensitive to gas;
the lower electrode (3) and the measuring electrode (12) are arranged on the upper end surface of the substrate (1) in a non-contact manner, the upper electrode (5) is supported on the lower electrode (3) through a supporting part (4), and the lower electrode (3), the supporting part (4) and the upper electrode (5) form a plate capacitance sensor for measuring air pressure;
the measuring electrode (12) is provided with the exposed sensitive material film (13), the measuring electrode (12) and the sensitive material film (13) form a resistance sensor for measuring gas types and concentrations, a bonding pad (15) is formed on the measuring electrode (12), and an electric signal of the measuring electrode (12) is led out through the bonding pad (15);
the support part (4) is also internally provided with a conductive part (8) for leading out the electric signal of the lower electrode (3), a bonding pad (7) communicated with the conductive part (8) is formed on the end surface of the support part (4), and a bonding pad (6) for leading out the electric signal of the upper electrode (5) is formed on the upper electrode (5).
2. The MEMS chip according to claim 1, wherein the substrate (1) is of monocrystalline silicon material, the MEMS chip further comprising: a first insulating layer (2_1) and a second insulating layer (2_2);
the first insulating layer (2_1) is arranged on the upper end face of the substrate (1) and is positioned between the upper end face of the substrate (1) and the lower electrode (3) and the measuring electrode (12);
the second insulating layer (2_2) is provided on the lower end face of the substrate (1).
3. The MEMS chip according to claim 2, further comprising a heating electrode (10), wherein the heating electrode (10) is disposed on the first insulating layer (2_1) in correspondence with the measuring electrode (12), and wherein a third insulating layer (11) is disposed between the heating electrode (10) and the measuring electrode (12).
4. A MEMS chip according to claim 3, wherein the edges of the heating electrode (10) protruding beyond the third insulating layer (11) at both opposite ends form respective protruding portions on which pads (14) of the heating electrode (10) are formed.
5. MEMS chip according to claim 1, characterized in that the side of the lower end face of the substrate (1) is provided with a back cavity (1_1) facing the measuring electrode (12).
6. The MEMS chip, as recited in claim 1, wherein the lower electrode (3) and the measurement electrode (12) each occupy half of the area of the upper end surface.
7. A method of manufacturing a MEMS chip, the MEMS chip integrating a gas pressure sensing part and a gas sensing part, the method comprising:
depositing a conductive material on a part of the area of the upper end surface of the substrate to serve as a lower electrode of the air pressure sensing part, depositing a measuring electrode for preparing the air pressure sensing part on the other part of the area of the upper end surface, forming a bonding pad on the measuring electrode, and leading out an electric signal of the measuring electrode through the bonding pad;
depositing and etching an oxide layer on the lower electrode to serve as a supporting part of the air pressure sensing part, bonding an air pressure sensitive film on the supporting part to serve as an upper electrode of the air pressure sensing part, forming a cavity between the lower electrode and the upper electrode, and enabling the lower electrode, the supporting part and the upper electrode to form a plate capacitance sensor for measuring air pressure;
depositing and preparing a sensitive material film exposed to the outside and sensitive to gas on the measuring electrode, so that the measuring electrode and the sensitive material film form a resistance sensor for measuring the type and concentration of the gas;
the method further comprises the steps of:
etching the supporting part to form a through hole communicated with the lower electrode, and filling the through hole with a conductive material to form a conductive part for leading out an electric signal of the lower electrode;
and depositing a bonding pad communicated with the conductive part on the end surface of the supporting part, and depositing a bonding pad for leading out an electric signal of the upper electrode on the upper electrode.
8. The method of manufacturing according to claim 7, wherein the substrate is made of single crystal silicon, the method further comprising:
depositing a first insulating layer on the upper end surface of the substrate, and enabling the first insulating layer to be positioned between the upper end surface of the substrate and the lower electrode and the measuring electrode; and depositing a second insulating layer on the lower end surface of the substrate;
correspondingly, depositing a measurement electrode on another partial region of the upper end face comprises:
and depositing a heating electrode on the other part of the area of the first insulating layer corresponding to the upper end face, and depositing a third insulating layer on the heating electrode, so that the third insulating layer is positioned between the heating electrode and the measuring electrode.
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| CN108012416B (en) * | 2017-12-25 | 2020-06-02 | 江苏蓝特电路板有限公司 | Self-powered multifunctional flexible circuit board |
| CN108362740B (en) * | 2017-12-27 | 2020-10-16 | 武汉微纳传感技术有限公司 | Metal oxide semiconductor gas sensor and manufacturing method thereof |
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