CN1571130B - 在自动引线接合过程中增强下接合对准的引线框架 - Google Patents

在自动引线接合过程中增强下接合对准的引线框架 Download PDF

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CN1571130B
CN1571130B CN031495796A CN03149579A CN1571130B CN 1571130 B CN1571130 B CN 1571130B CN 031495796 A CN031495796 A CN 031495796A CN 03149579 A CN03149579 A CN 03149579A CN 1571130 B CN1571130 B CN 1571130B
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刘榕标
穆罕默德·莱贝·穆萨奈纳
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Abstract

一种在生产集成电路组件中在自动引线接合的过程中增强铜引线框架的视觉可检测性的方法，该铜引线框架具有一个小片连接盘和多个触点。环、线和点的阵列中的至少一种镀在引线框架的小片连接盘上和在小片连接盘的边缘的周围。对引线框架进行表面处理以使在引线框架的表面上产生颜色变化，以改善所述环、线和点中的所述至少一个的视觉可检测性。

Description

在自动引线接合过程中增强下接合对准的引线框架
技术领域
一般地本发明涉及集成电路的封装，更具体地说涉及用于在引线接合的过程中增强下接合点(downbond site)的自动可视检测的改善的集成电路组件。
背景技术
高性能的集成电路(IC)组件在本领域中是公知的。这些高性能IC组件例如包括塑料芯片载流子组件、无引线塑料芯片载流子组件、四芯线扁平封装IC组件等。
为了给IC组件提供统一的接地和电源并减小电噪声，理想的是许多接地端互连连接。通常，IC组件包括连接到引线框架的小片连接盘的许多接地导线，为便于制造通常给该引线框架填充银。
特别是在高频操作下，下接合引线的长度影响IC电路的调谐。结果，IC组件通常使用具有许多导电触点、小片连接盘和一般形成在小片连接盘的周围和在小片连接盘和触点之间的导电环、导电线或导电点的阵列的引线框架。通常，环、线或点阵用作功率和/或接地平面并由在裸铜引线框架上的银片或点形成。半导体小片安装在小片连接盘上并使用导电接合引线来电连接在半导体小片上的接合盘和引线、小片连接盘和环或点阵列之间。在铜引线框架上的银可通过机器人引线接合设备的自动可视系统进行检测。因此，为实现精确并可重复的位置上的引线接合，就要识别在铜引线框架上的银点、片或环。
不幸的是，铜引线框架要进行热处理比如小片连接烘焙和引线接合加热，这些处理使铜由褐色铜氧化为蓝色或者在某些情况下氧化为银色。在引线接合的过程中在发生问题时经常发生这种情况。例如，如果要求操作员辅助，则引线框架片经常定点在高温加热器块中直到操作员到来，这时铜已经变成银色。在引线接合设备的视觉系统使用在铜背景中的银环、线或点以便精确且反复地进行引线接合时，这个问题尤其突出。然而，视觉系统并不能区别银环、线或点和氧化的铜背景。因此，引线接合设备不能接合或会在错误的位置上进行接合。
发明内容
因此，本发明的一个目的是提供一种在自动引线接合过程中具有改善的下接合对准特性的引线框架。
根据本发明的一方面，提供一种在生产集成电路组件时在自动引线接合的过程中增强铜引线框架的视觉可检测性的方法，该铜引线框架具有一个小片连接盘和多个触点。该方法包括在引线框架的小片连接盘上和在小片连接盘的边缘的周围有选择性地镀银，并且用30％至40％的过氧化氢，1％至5％的苯并三唑的水溶液浸渍该引线框架，使引线框架的颜色变成黑色，以改善有选择性地镀的银的视觉可检测性。
根据本发明的另一方面，提供一种引线框架，该引线框架具有在其上安装半导体小片的一个小片连接盘、在小片连接盘和其周围边缘上排列部分区域镀银，并且在镀银区域之外的区域附有一层有机金属复合物层。
根据本发明的另一方面，提供一种集成电路组件。该集成电路组件包括小片连接盘、安装到小片连接盘上的半导体小片、设置在小片连接盘外周的至少一排触点、在该小片连接盘、小片连接盘的触点和小片连接盘周边的区域镀银，并在非镀银区域，用化学浸渍的方法形成一层有机金属复合物层。
根据本发明的另一方面，提供一种30％至40％的过氧化氢，1％至5％的苯并三唑混合溶液的用途，用于在铜引线框架的表面颜色变成黑色，以增强环形、线形和点阵形镀银区域的视觉可检测性。
因此，有利地，铜引线框架的化学浸渍确保了在铜和有选择性地镀的银之间在视觉上可识别的差别。因此，通过自动下接合(引线接合)的视觉检测系统可以容易地识别银。在本发明的一种实施例中，化学浸渍并不降低镀银表面的引线可接合性能。在本发明的一种实施例中，化学浸渍改善了在铜表面的模具化合物的附着力。
附图说明
参考下文的附图会更好地理解本发明，在全部附图中相同的标号表示类似的部件，在附图中：
附图1A至1G所示为根据本发明的一种实施例制造集成电路组件的处理步骤；
附图2A所示为根据本发明的一种实施例制造的集成电路组件的顶视图；和
附图2B所示为根据本发明的另一种实施例制造的集成电路组件的顶视图。
具体实施方式
首先参考附图1A至1G以描述根据本发明的第一实施例增强引线框架的视觉可检测性的方法。在此所描述的方法并不限制对无引线的塑料芯片载流子(LPCC)集成电路的处理，例如它也可以使用塑料引线芯片载流子(PLCC)、小外形集成电路(SOIC)、四芯线扁平封装(QFP)和薄四芯线扁平封装(TQFP)组件的处理。
所描述的第一实施例涉及增强LPCC的引线框架的视觉可检测性的方法，即在美国专利US6,229,200中所阐述的方法的改进，在此以引用参考的方式将该专利公开的内容结合在本申请中。
参考附图1A，所示为铜板衬底的正视图，该铜板衬底构成了引线框架片100的原始材料。如美国专利US6,229,200中更详细地讨论，引线框架片划分为多个部分，每个部分以阵列的方式(例如，3×3阵列、5×5阵列等)并入了多个引线框架单元。在附图1A的正视图中仅描述了一个这样的单元，相邻单元的部分以点线示出。
引线框架片100以蚀刻抗蚀剂掩模102覆盖(附图1B)以保护预定的区域不被蚀刻，并将蚀刻抗蚀剂掩模有选择性地暴露(附图1C)和显影(附图1D)。然后对引线框架片100进行蚀刻处理以产生触盘203和小片连接盘202的形式的触点(附图1E)。
正如本领域普通技术人员会了解到，然后机械或化学地掩模引线框架和镀银。因此，如附图1F所示地有选择性地镀银。在小片连接盘202的边缘的周围以点阵或环的形式进行有选择性地镀银，如附图2A和2B最佳地示出。银提供了改善的引线接合并从铜引线框架中可视地识别。
接着将引线框架浸渍在与裸铜发生反应以有效地改变铜的颜色的化学物质中。在优选的实施例中，使用带有聚合型稳定剂的三唑化合物以在铜引线框架上形成黑色的有机金属复合物的薄层或金属间化合物。适合的化学物质的一种实例是过氧化氢和苯并三唑的混合物，可取的是过氧化氢的重量在大约30％至大约40％和苯并三唑的重量在大约1％至5％的范围以及其余的为水。引线框架在化学物质中浸渍一段适合于改变铜颜色的时间。在一种实施例中，在大约30℃至大约40℃的温度(可取的是大约35℃)下引线框架浸渍在化学混合物中大约10秒钟至大约50秒钟(可取的是大约30秒钟)。化学处理不会对引线接合性能或使镀银严重脱色产生不利影响。
通过环氧树脂或其它的装置将单一的半导体小片206常规地安装到小片连接盘202并固化环氧树脂。然后金线205接合在半导体小片206和外围导线或触点203之间和在半导体小片和小片连接盘之间。更具体地说，金线接合到镀银区域。镀银区域可从经化学处理(浸渍)的铜引线框架中可识别并因此在自动引线接合的过程中通过视觉检测系统可检测。这种铜脱色在不同的温度变化范围中都是稳定。
然后使用公知的技术模制引线框架并使其单一化，或锯出孔(saw punched)。所得的集成电路组件如附图1G所示。
本发明并不限于LPCC集成电路，并且例如可用于PLCC、SOIC、QFP和TQFP电路。在这些实施例的每种实施例中，通过机械或化学掩模保护引线框架。化学掩模是优选用于精确的掩模的目的。接着，在一部分所述小片连接盘上和在其周围边缘上排列的部分区域镀银；并在上述镀银区域之外的区域附有一层有机金属复合物层，其中所述镀银区域的形状至少有环形镀银、线性镀银、点阵形镀银中的至少一个。然后，引线框架化学地浸渍以使裸铜脱色，由此确保了在铜和镀银之间存在在视觉上可识别的差别以便视觉检测。
在此所描述的实施例可以改变或修改。例如，可以对触盘也镀银。本领域普通技术人员可以作出其它的改进和变型。所有的这些改进和变型都将落在附加的权利要求所阐述的本发明的范围内。

Claims (10)

1.一种在生产集成电路组件中在自动引线接合的过程中增强铜引线框架的视觉可检测性的方法，该铜引线框架具有一个小片连接盘和多个触点，该方法包括：
在所述引线框架的所述小片连接盘上和在所述小片连接盘的边缘的周围有选择性地镀银；和
用30％至40％的过氧化氢，1％至5％的苯并三唑的水溶液浸渍所述引线框架，使在所述引线框架的表面变成黑色，以改善有选择性地镀银的视觉可检测性。
2.根据权利要求1所述的方法，其中在至少所述小片连接盘上镀银区域的形状至少为环形、线形和点阵形中的一种。
3.根据权利要求1所述的方法，其中所述浸渍包括浸渍在过氧化氢和苯并三唑混合溶液中以在引线框架上引入有机金属复合物的薄层。
4.一种引线框架，包括：
在其上安装半导体小片的一个小片连接盘；
设置在所述小片连接盘外周的多个触点；
在一部分所述小片连接盘上和在其周围边缘上排列的部分区域镀银；和
在上述镀银区域之外的区域附有一层有机金属复合物层。
5.根据权利要求4所述的引线框架，其中所述镀银区域的形状至少有环形镀银、线性镀银、点阵形镀银中的至少一个。
6.根据权利要求5所述的引线框架，其中所述镀银排列在一部分所述小片连接盘上并且所述有机金属复合物层设置在所述小片连接盘的其余部分上。
7.一种集成电路组件，包括：
小片连接盘；
安装到一部分所述小片连接盘上的半导体小片；
设置在所述小片连接盘外周的至少一行触点；
在所述小片连接盘上、在所述小片连接盘的外接触点和在所述小片连接盘周边的区域镀银；
用引线结合连接所述小片与所述小片连接盘周围的外接触点，连接小片与小片连接盘上的镀银区域；和
在至少一部分所述小片连接盘上附有的有机金属复合物层。
8.根据权利要求7所述的集成电路组件，其中所述镀银包括在所述小片连接盘上的环形、线形和点阵形镀银中的至少一个。
9.根据权利要求7所述的集成电路组件，其中所述触点包括触盘。
10.30％至40％的过氧化氢，1％至5％的苯并三唑和其余为水的混合溶液的用途，用于在铜引线框架的表面颜色变成黑色，以增强环形、线形和点阵形镀银区域的视觉可检测性。
CN031495796A 2003-07-11 2003-07-15 在自动引线接合过程中增强下接合对准的引线框架 Expired - Fee Related CN1571130B (zh)

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US6229200B1 (en) * 1998-06-10 2001-05-08 Asat Limited Saw-singulated leadless plastic chip carrier
CN1095623C (zh) * 1996-04-18 2002-12-04 国际商业机器公司 用于含铜金属的复合涂料组合物

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CN1095623C (zh) * 1996-04-18 2002-12-04 国际商业机器公司 用于含铜金属的复合涂料组合物
US6229200B1 (en) * 1998-06-10 2001-05-08 Asat Limited Saw-singulated leadless plastic chip carrier

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