CN101312177A - 用于半导体器件的引线框 - Google Patents
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Abstract
本申请涉及一种半导体器件的引线框,其包括至少一行接触端子和用于容纳集成电路管芯的管芯座。隔离材料位于接触端子和管芯座之间。隔离材料将邻近的引线指彼此电隔离开并从管芯座电隔离开。隔离材料也在线键合操作期间将引线指保持在适当位置并且因此引线框的底部不必在装配工艺期间以胶带固定,这使得节省了胶带固定和解除胶带固定步骤的执行。隔离材料也防止使用胶带时有时会发生的树脂流出问题。如果执行切断步骤,锯条仅需要切穿隔离材料而不是金属,因此提高了锯刃寿命。
Description
技术领域
本发明涉及集成电路和封装的集成电路,并且更具体地说涉及封装的集成电路的引线框。
背景技术
集成电路(IC)管芯是在比如硅晶片的半导体晶片上形成的小器件。这种管芯典型地从晶片上切下并且使用引线框封装。管芯上的键合焊盘通过线键合电连接至引线框的引线。用保护材料密封管芯和键合线以形成封装。密封在封装中的引线止于封装外的端子点阵列。依据封装类型,可以原样使用这些端子点,比如在薄型小外形封装(TSOP)中,或者可以进一步处理这些端子点,比如通过附加球形焊球进行处理以用于球栅阵列(BGA)。端子点使得管芯可以电连接其它电路,比如印刷电路板。
引线框是金属框,通常是铜或镍合金,它支撑IC并为封装的芯片提供外部电连接。引线框通常包括标记或管芯座、以及引线指。
参考图1,图1示出传统封装器件的引线框10和管芯12的放大横截面图。引线框10包括引线指14和管芯座16。管芯12安装到管芯座16,并且管芯12的键合焊盘18用键合线20电连接至引线指。管芯12、引线指14、管芯座16以及键合线20通过模塑料(未示出)密封,然后执行切割处理以将同时形成的相邻器件分开。也可以执行附加的切割操作以将内部的引线指与管芯座16分开。
图1示出切割引线指14之一以将该引线指14从管芯座16分开的锯条22。为了便于切割并延长锯条22的寿命,有时蚀刻引线指14使得不需要进行深度切割。提供不需要切割的引线框将更好。
发明内容
为了提供其装配工艺需要较少切割的半导体器件的引线框,本发明提供一种具有至少一行接触端子和用于容纳集成电路管芯的管芯座的引线框。隔离材料位于接触端子和管芯座之间。隔离材料将邻近的引线指互相电隔离开。隔离材料也在线键合操作期间将引线指保持在适当位置并且从而不必在装配工艺期间用胶带固定引线框的底部,从而省去传统装配操作中的用胶带固定和解除胶带固定的步骤。隔离材料也防止了使用胶带时有时发生的树脂流出的问题。如果执行切割步骤,则锯条仅需要切穿隔离材料而不是金属,从而提高了锯刃寿命。
本发明也提供了一种新的半导体器件,包括用于容纳集成电路管芯的管芯座和邻近管芯座的至少一行接触端子。隔离材料位于接触端子和管芯座之间。集成电路管芯安装到管芯座的表面。键合线电连接管芯上的键合焊盘到各个相应的接触端子。
本发明还包括一种封装半导体器件的方法,该方法包括步骤:
形成引线框,其具有管芯座、邻近管芯座的至少一行接触端子、以及连接但是隔离管芯座和接触端子的隔离材料;
将集成电路管芯安装到管芯座的上表面;
电连接集成电路管芯的键合焊盘到各个相应的接触端子;以及
通过模塑料密封管芯、电连接以及接触端子的至少上表面。
附图说明
当结合附图阅读时将更好的理解上述发明内容以及对本发明优选实施例的具体描述。出于说明本发明的目的,附图中示出了优选提供的实施例。但是应理解,本发明不受所示的具体结构和手段的限制。在附图中:
图1是在装配工艺期间传统封装半导体器件的放大的横截面图;
图2是根据本发明的一个实施例的封装半导体器件的放大横截面图;
图3是根据本发明的引线框的实施例的放大底视图;
图4是图3的引线框的放大俯视图,其中半导体管芯电连接到引线框;
图5是传统双排引线框的放大俯视图;
图6是根据本发明一个实施例的双排引线框的放大俯视图;
图7是用于封装高功率器件的另一传统引线框的放大俯视图;以及
图8是根据本发明实施例的用于封装高功率器件的引线框的放大俯视图。
具体实施方式
以下结合附图阐述的具体说明旨在描述本发明的优选实施例,并且不旨在提供本发明所能实践的唯一形式。应理解,可以通过不同的实施例完成相同或等价的功能,旨在将这些不同实施例包含在本发明的精神和范围内。如本领域普通技术人员所理解的,本发明可以用于各种封装和封装类型。
为便于说明已经放大了图中的一些特征,并且附图及其元件不必成合适比例。此外,本发明示出在四边扁平无引线(QFN)类型的封装中实施。但是,本领域的普通技术人员将容易理解本发明的细节,并且理解本发明可应用于其它封装类型。在附图中,类似的标号遍及附图用于指示类似的元件。
现在参考图2,示出了根据本发明实施例的封装半导体器件30的放大横截面图。半导体器件30包括安装到管芯座34表面的半导体管芯32。管芯32可以是本领域技术人员已知的类型,比如在硅晶片上形成并从硅晶片上切下的电路。典型的管芯尺寸范围从4mm×4mm到12mm×12mm。管芯32可以具有从大约6mil到大约21mil的厚度。管芯座34的尺寸和形状可以容纳管芯32。由于已知各种尺寸的管芯,应理解管芯座34的尺寸和形状将取决于所封装的特定管芯。如本领域技术人员所已知的,使用粘合剂将管芯32安装到管芯座34上。
器件30包括邻近管芯座34的至少一行引线或接触端子36。在所示实施例中,在管芯座34一侧上有单行接触端子36并且在管芯座34的至少另一侧上有两行接触端子36。如本领域技术人员将理解的,可以以多行接触端子围绕管芯座34。管芯座34和接触端子36形成引线框。如已知的,引线框可以由比如铜的导电金属或金属合金形成。
管芯32电连接至接触端子36。更具体地说,在所示实例中,键合线38将接触端子36电连接至各个管芯键合焊盘40上。使用线键合工艺将键合线38安装到管芯键合焊盘40和接触端子上。
提供隔离材料42以连接但是彼此电隔离接触端子36以及将接触端子36与管芯座34电隔离开。隔离材料42稳固地支撑管芯座34和接触端子36使得引线框(管芯座34和接触端子36)的底部在装配工艺期间不必如传统所作的用胶带固定。即,隔离材料42将端子36保持在适当位置使得可以执行线键合操作。
在执行线键合之后,执行密封工艺,其中管芯32、电连接和线40以及接触端子36的至少上表面被模塑料44覆盖。这种密封工艺是已熟知的。隔离材料42的一个好处是它防止树脂流出,当在装配工艺期间使用前述胶带时有时会发生树脂流出。
隔离材料42粘附至管芯座34和接触端子36。而且,隔离材料42能够承受大于约200℃的温度。在本发明的一个实施例中,隔离材料42包括具有电绝缘性质的聚合体,比如聚碳酸酯、聚四氟乙烯或聚己内酰胺。即,不使用类似环氧和硅填充物的材料的混合物的标准塑料模塑料,聚碳酸酯、聚四氟乙烯或聚己内酰胺是通过单体的聚合而形成的单一材料,能提供更好的可制造性并降低成本。在本发明的另一实施例中,隔离材料包括陶瓷材料。如图2中所示,隔离材料42优选地具有大约与管芯座34和接触端子36相同的高度。
现在参考图3,示出了根据本发明实施例的引线框50的放大底视图。引线框50包括管芯座52、围绕管芯座52的多个引线或接触端子54、以及物理地连接但是电隔离管芯座52和接触端子54的隔离材料56。在此实施例中,包括管芯座52和接触端子54的引线框50由铜片经冲压、切割或蚀刻而形成。在此实施例中,有三行端子54围绕管芯座52。然后经比如喷射模塑法的模塑令隔离材料56位于管芯座52和端子54之间。
图4是图3的引线框的放大俯视图,其中半导体管芯58以线60电连接到接触端子54。如本领域技术人员将理解的,全部或大部分接触端子54将电连接至管芯58上的键合焊盘,之后执行模塑或密封工艺。
图5是用于形成QFN类封装的典型引线框62的俯视图。引线框62具有管芯座64和两行引线66。半导体管芯68安装到管芯座64的表面。两行引线66包括内行(靠近管芯座64)和外行(远离管芯座64)。使用引线指将内行引线安装到管芯座或围绕管芯座64的金属闸板环,而外行安装到围绕引线框62外围延伸的金属分流条。在装配工艺期间,内行引线必须通过切断引线指而从闸板环分开,并且外行引线必须再通过切割操作从分流条分开。
现在参考图6,示出了根据本发明实施例的引线框70,其适于形成QFN类封装。引线框70包括管芯座72和围绕管芯座72的两行接触端子74。管芯座72的尺寸和形状可以容纳半导体管芯68。典型地,管芯座由比如铜的金属形成,但是也可以使用其它材料。接触端子74也由在管芯和比如印刷电路板(PCB)的器件外部之间提供良好电连接的金属形成。隔离材料76物理地连接管芯座72和接触端子74并且同时将管芯座72和接触端子74相互电隔离开。如先前讨论的,隔离材料76是具有电隔离性质的材料,可以承受高达大约200℃的温度,并且具有良好的粘合性以粘接到管芯座72和接触端子74。优选材料是各种聚合材料,比如聚碳酸酯、聚四氟乙烯和聚己内酰胺。注意,由于使用隔离材料76,所以不需要引线框62(图5)的分流条、引线指和闸板环。
现在参考图7,示出了用于封装高功率器件的传统引线框80的俯视图。引线框80具有至少一个管芯座82和至少一行引线84。在此引线框80中有两行引线84,尽管引线84由相同的引线指形成。两行引线84通过沿两个切割区切割引线指形成,一个切割区位于外行引线和引线框80的外围之间,另一个位于引线之间。引线框80典型地通过切割、冲压和/或蚀刻裸金属片而形成。
图8示出根据本发明实施例的适于封装高功率半导体器件的引线框86。引线框86包括管芯座88和邻近管芯座88的两行接触端子90。管芯座88的尺寸和形状可以容纳半导体管芯(未示出)。管芯座88和接触端子90优选地由铜或其它作为良好电导体的金属形成。管芯座88和接触端子90物理地与隔离材料92连接,隔离材料92也将管芯座88和接触端子90互相电隔离。在本实施例中,隔离材料92是具有电隔离性质的材料,可以承受高达约400℃的温度,并且具有良好的粘接性以粘接到管芯座88和接触端子90。优选材料是各种聚合材料,比如聚碳酸酯、聚四氟乙烯和聚己内酰胺。
根据本发明的引线框,可以修改用于形成封装器件的传统装配工艺,尤其是关于引线框本身的形成。为了简要说明形成封装器件的一种方法,引线框由比如铜的金属薄片形成。优选地,从金属片基本上同时地形成多个引线框,比如3×3或4×4的引线框阵列。引线框包括管芯座和接触端子。然后,将隔离材料置于引线框的管芯座和接触端子之间,其中隔离材料包括聚合材料,比如聚碳酸酯、聚四氟乙烯和聚己内酰胺。将半导体管芯安装到管芯座上并且通过比如线键合电连接到各个引线框接触端子。最后,执行密封工艺。例如,可以将引线框阵列放在模具中并且在管芯、线和电连接上形成塑料模塑材料。接触端子的下表面不覆盖模塑料,而是保持暴露,并且因此提供到管芯的电连接。
形成本发明的引线框的另一方法是以模塑的聚合材料块开始,如上所述,然后蚀刻和钻出引线框图案到模塑块中。可以通过机械、化学或激光钻来执行钻的过程。然后,在被构图的块上执行浇铸或电镀工艺以形成引线框的金属部分。或者,可以通过汽相沉积(PVD/CVD)形成引线框的金属部分。从而,仅具有需要的金属的引线框形成了。如将意识到的,随着贵金属成本上升,节约金属是有利的。
通过使用本发明的引线框,引线框不需要在线键合之前以胶带固定,之后也不需要解除胶带固定。不需要执行切断操作以将接触端子彼此分开或从分流条或闸板环分开。
已经出于说明和描述的目的描述了本发明的优选实施例,但它们不是详尽的或它们不意在将本发明限制到所公开的形式。本领域技术人员将意识到,可以对上述实施例进行更改而不脱离本发明广泛的发明概念。例如,可以形成不带管芯座的引线框,同样引线框可以具有两个或多个管芯座。另外,管芯和管芯座的尺寸可以变化以适应所需的封装设计。同样,一个或多个管芯可以一个摞在另一个上以形成堆叠的管芯封装。因此应理解,本发明不受所公开的具体实施例的限制,而是在所附权利要求所定义的本发明的精神和范围内覆盖多种修改。
Claims (10)
1.一种半导体器件的引线框,所述引线框包括:
至少一行接触端子;
用于容纳集成电路管芯的管芯座;以及
连接接触端子和管芯座的聚合隔离材料。
2.根据权利要求1的引线框,其中,所述隔离材料能够粘接到接触端子和管芯座,并且承受大于约200℃的温度。
3.根据权利要求1的引线框,其中,所述隔离材料是聚碳酸酯、聚四氟乙烯和聚己内酰胺中的一种。
4.根据权利要求1的引线框,其中,所述接触端子、管芯座和隔离材料具有基本上相同的高度。
5.根据权利要求1的引线框,其中,所述至少一行接触端子围绕管芯座。
6.根据权利要求5的引线框,还包括第二行端子围绕第一行端子,其中,所述隔离材料将第一和第二行端子中的端子互相电隔离开。
7.根据权利要求1的引线框,其中,所述接触端子和管芯座由铜形成。
8.根据权利要求1的引线框,其中,所述隔离材料包括陶瓷。
9.一种半导体器件,包括:
管芯座,用于容纳集成电路管芯;
围绕管芯座的至少一行接触端子;
聚合隔离材料,连接接触端子和管芯座;
集成电路管芯,连接到管芯座的表面,其中使用键合线将管芯上的键合焊盘电连接到各个相应的接触端子;以及
密封材料,覆盖集成电路管芯的上表面、接触端子、以及隔离材料,其中,暴露第一和第二行接触端子至少下表面。
10.一种封装半导体器件的方法,包括步骤:
形成引线框,其具有管芯座、邻近管芯座的至少一行接触端子、以及连接但是隔离管芯座和接触端子的聚合隔离材料;
将集成电路管芯安装到管芯座的上表面;
电连接集成电路管芯的键合焊盘到各个相应的接触端子;以及
以模塑料密封管芯、电连接以及接触端子的至少上表面。
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CN104241238A (zh) * | 2013-06-09 | 2014-12-24 | 飞思卡尔半导体公司 | 基于引线框的半导体管芯封装 |
CN109983591A (zh) * | 2016-11-11 | 2019-07-05 | 亮锐控股有限公司 | 制造引线框的方法 |
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US20100213589A1 (en) * | 2009-02-20 | 2010-08-26 | Tung-Hsien Hsieh | Multi-chip package |
US20100213588A1 (en) * | 2009-02-20 | 2010-08-26 | Tung-Hsien Hsieh | Wire bond chip package |
CN101853790A (zh) * | 2009-03-30 | 2010-10-06 | 飞思卡尔半导体公司 | Col封装的新工艺流 |
US20110193207A1 (en) * | 2010-02-09 | 2011-08-11 | Freescale Semiconductor, Inc | Lead frame for semiconductor die |
TWI453844B (zh) * | 2010-03-12 | 2014-09-21 | 矽品精密工業股份有限公司 | 四方平面無導腳半導體封裝件及其製法 |
CN102403298B (zh) * | 2010-09-07 | 2016-06-08 | 飞思卡尔半导体公司 | 用于半导体器件的引线框 |
US9368433B2 (en) | 2014-04-30 | 2016-06-14 | Marvell World Trade Ltd. | Method and apparatus for mounting solder balls to an exposed pad or terminal of a semiconductor package |
CN105719975B (zh) | 2014-08-15 | 2019-01-08 | 恩智浦美国有限公司 | 半导体封装的浮动模制工具 |
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US6798047B1 (en) * | 2002-12-26 | 2004-09-28 | Amkor Technology, Inc. | Pre-molded leadframe |
US20040201080A1 (en) * | 2003-04-08 | 2004-10-14 | Suresh Basoor | Leadless leadframe electronic package and IR transceiver incorporating same |
CN101213663B (zh) * | 2005-06-30 | 2010-05-19 | 费查尔德半导体有限公司 | 半导体管芯封装及其制作方法 |
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CN104241238A (zh) * | 2013-06-09 | 2014-12-24 | 飞思卡尔半导体公司 | 基于引线框的半导体管芯封装 |
CN104241238B (zh) * | 2013-06-09 | 2018-05-11 | 恩智浦美国有限公司 | 基于引线框的半导体管芯封装 |
CN109983591A (zh) * | 2016-11-11 | 2019-07-05 | 亮锐控股有限公司 | 制造引线框的方法 |
CN109983591B (zh) * | 2016-11-11 | 2022-10-04 | 亮锐控股有限公司 | 制造引线框的方法 |
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