CN1542952A - 用于从多个电子元件散热的专用装置 - Google Patents

用于从多个电子元件散热的专用装置 Download PDF

Info

Publication number
CN1542952A
CN1542952A CNA2004100004174A CN200410000417A CN1542952A CN 1542952 A CN1542952 A CN 1542952A CN A2004100004174 A CNA2004100004174 A CN A2004100004174A CN 200410000417 A CN200410000417 A CN 200410000417A CN 1542952 A CN1542952 A CN 1542952A
Authority
CN
China
Prior art keywords
thermal
heat radiation
radiation matrix
heat
thermal column
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2004100004174A
Other languages
English (en)
Inventor
I
阿瑟·方
���ס�����˹����
马文·格伦·黄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Agilent Technologies Inc
Original Assignee
Agilent Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agilent Technologies Inc filed Critical Agilent Technologies Inc
Publication of CN1542952A publication Critical patent/CN1542952A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3731—Ceramic materials or glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3736—Metallic materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/2612—Auxiliary members for layer connectors, e.g. spacers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01042—Molybdenum [Mo]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01068—Erbium [Er]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/4935—Heat exchanger or boiler making

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Cooling Or The Like Of Electrical Apparatus (AREA)

Abstract

给出了一种专用散热器组件，其中，选取特定尺寸、形状和材料的散热基体以满足预定的散热要求，并且选取或形成特定尺寸、形状和材料的多个散热柱以满足预定的要求。散热基体和散热柱形成具有专用特征的散热器组件，选择所述专用特征以优化用于从多个电子元件散热的具体应用的散热、CTE匹配、环境电阻要求、低质量要求、尺寸、可加工性、成本结构以及其他所希望的特征。

Description

用于从多个电子元件散热的专用装置
技术领域
本发明涉及散热器，具体而言，涉及用于从一个或多个电子元件散热的专用散热器件及其制造方法。
背景技术
诸如集成电路或印刷电路板的电子元件在各种器件中正变得越来越常用。例如，中央处理单元、接口以及图形和内存电路通常包括若干集成电路。在正常运行时，许多诸如集成电路的电子元件生成大量的热。如果在这些和其他器件运行时产生的热不传走，那么电子元件或其他靠近它们的器件可能会过热，引起对元件的损伤或元件性能的降低。
为了避免由过热引起的这些问题，经常和电子元件一起使用散热器或其他散热器件来散热。必须将散热器的散热要求和其他因素平衡。如果散热器的热膨胀系数(CTE)和电子元件差别太大，那么散热器可能会裂开、损伤或从它们所安装到的电子元件上脱落。而且，许多散热器材料相对较重。如果散热器所安装到的电子元件受到振动或冲击，那么安装到电子元件上的散热器的重量可使散热器裂开、损伤或从它所安装到的电子元件上脱落。
经常地，印刷电路板、多芯片模块或电子系统上的多个电子元件需要散热。为了优化系统成本、重量、尺寸和其他特征，多个元件能够利用单个散热器件将是有益的。但是，印刷电路组件上或多芯片模块中的不同管芯可能具有不同的热膨胀系数或散热要求。提供一种能够适应多个需要散热的器件的各种不同要求的散热器件将是有益的。
一些材料提供良好的导热性，但难以成形、昂贵、重或有其他对特定散热情形不想要的特征。
因此，在工业中存在一种需要，即能够优化散热器件的散热、重量、成本、可加工性和其他特征以及能够向电子组件中多个管芯或元件提供单个散热器件。
发明内容
本发明提供一种用于优化散热器件的散热、CTE(热膨胀系数)匹配、重量、成本、可加工性或其他特征的装置和方法。
该装置可包括用于从多个电子元件散热的专用散热器件，该专用散热器件可具有散热基体，该散热基体根据其尺寸、形状、质量、成本、导热性或环境电阻特性中的一个或多个来选取；还具有多个散热柱，每个散热柱根据其CTE和可加工性来选取，使得每个散热柱可以安装在散热基体上，并且使得电子元件可以安装在每个散热柱上。
一种制造用于从多个电子元件散热的专用散热器件的方法，该方法可以包括选取或形成散热基体；形成多个散热柱，使得每个散热柱可以具有一定形状和尺寸，从而与待冷却的电子器件匹配；并将每个散热柱安装在所述散热基体上。可以将待冷却的电子器件安装在每个散热柱上。
附图说明
通过参考结合附图的以下详细说明，对本发明更完整的认识以及伴随的许多优点将被更好的理解并变得很清楚，附图中类似的标号表示相同或相似的元件，其中：
图1图示了根据本发明第一实施例的散热器件；
图2图示了根据本发明第二实施例的散热器件；
图3图示了根据本发明第三实施例的散热器件；
图4图示了制造根据本发明第一实施例的散热器件流程图；
图5图示了制造根据本发明第二实施例的散热器件流程图；
图6图示了制造根据本发明第三实施例的散热器件流程图；
图7图示了根据本发明第四实施例的集成电路器件封装在封装之前的俯视平面图；
图8图示了图7的集成电路器件沿线8-8的截面图；
图9图示了根据本发明第五实施例从多个元件散热的散热器件；
图10图示了制造根据本发明第五和第六实施例的散热器件流程图；以及
图11图示了根据本发明的第六实施例安装到散热器件上的多个集成电路在封装之前的截面图。
具体实施方式
如出于图示目的的附图所示，本发明涉及提供散热器件的技术，其中可以有选择地优化器件的各种特征，例如导热性、精度公差、与要冷却部件的CTE匹配、环境电阻、小质量、好的粘接性、成本和可加工性等等。可用有多种材料的散热器来完成优化散热器件的各种特征，创建一种专用散热器结构，能够比单一的散热器结构更轻易地在不同场合满足不同的要求。
现在看附图，图1图示了根据本发明第一实施例的散热器件。提供了散热基体110。散热基体110可从任何已知的散热器材料、合金或其组合中选择，例如碳化硅铝、铜、铝、碳/金属复合材料、陶瓷或其他已知的散热器材料。仅为了示例，由于其导热性能和小重量可以选择AlSiC。可通过对任何已知的散热器材料、合金或其组合进行冲压、机加工、刻蚀或激光切割来形成散热柱120，例如铜、钨、钼、铝、铜/钼/铜或其他已知的散热器材料。
可选择散热柱120使其具有和器件(集成电路芯片、集成电路封装、集成电路模块和印刷电路板等等)相对较接近的CTE(热膨胀系数)，散热柱120将安装在所述器件上。如图4中的流程图所示，通过任何已知的安装方法，例如铜焊、软焊(soldering)、粘合、压配合、螺钉、铆钉、熔焊、高压下冷扩散、扩散连接或者导热金属粘接，可在预定位置130将散热柱120安装到散热基体110的表面180上。散热柱120通过机加工、冲压、刻蚀或激光切割来精确成形并在预定位置130安装到散热基体110上。
由于本发明的专用散热器是多用途的，所以可准备好各种材料和尺寸的各种散热基体110。可准备好各种材料和尺寸的各种散热柱120。于是，要冷却的器件(图7到8中示出的一个示例实施例)的制造者可根据特征的需要、成本、小质量、良好的导热性和精度公差等等来为具体的散热应用选择基体110和柱120。如图4所示，在此情况下，步骤410中，制造者可按具体应用的要求选择基体110，步骤420中，选择柱120并选择合适的安装方法，以在最小化散热器成本的同时按应用优化散热器特性。步骤430中，要冷却的器件可安装到柱上。应注意到，在柱120安装到基体110上之前就可将柱120安装到要冷却的器件上。
或者，制造者可准备好不同材料和尺寸的各种散热基体110或从供应商订购。一旦在步骤410中为一个具体应用选择了散热基体110，就可按特定的尺寸和导热性要求等等来制造定制的散热柱120。柱120制造好之后，在步骤420中，可通过合适于该应用的任何安装方法来安装。此实施例允许组成基体110的材料、合金或复合物可加工性不太好，但具有其他所需要的散热器特性，例如良好的导热性、便宜、小质量等等，同时柱120可提供其他特性，例如和要冷却的器件间提高的CTE匹配、可更精确地加工到和要冷却的器件匹配的尺寸等等。柱还可用来实现与每个各自的管芯的相对CTE匹配。应注意到一般不需要精确的CTE匹配，正如通过引用包含在本说明书中的美国专利No.5,886,407(U.S.Pat.No.5,886,407，Polese等人)所公开的，具有相对接近的CTE就足够了。
图2示出了根据本发明第二实施例的散热器件。在图2中，散热基体210设有对准腔230用于对准并安装散热柱220。可用任何已知的方法来形成散热基体210，例如机加工或冲压。腔230可通过机加工或精压/冲压形成在基体210中。如图5的流程图所示，一旦在步骤510中选择了基体，就可以在步骤520中通过铜焊、软焊、粘合、扩散连接、高压下冷扩散、导热金属粘接或其他已知的安装方法来将柱220安装在对准腔230中。在步骤530中，可通过包括环氧(epoxy)或共晶(eutectic)管芯安装的任何标准的管芯安装方法，来将要冷却的器件(未示出)安装到柱220上。此实施例可使得柱220在基体210上更精确地对准。
图3示出了根据本发明第三实施例的散热器件。在图3中，根据具体散热应用的精确要求由金属、合金或复合物的材料制成具有预定尺寸的散热基体310。如图6所示，在步骤610中选择基体之后，在步骤620中由被选来形成散热柱320的材料组成的层390通过任何已知的安装方法来安装，例如铜焊、软焊、粘合、扩散连接或真空热压等等。安装层390之后，在步骤630中，通过机加工、激光切割、化学刻蚀或其他已知工艺在层390的顶面上的预定位置330处形成具有和要冷却的器件匹配的预定尺寸的柱320。在层390中形成散热柱320之后，在步骤640中，可安装要冷却的器件。散热柱被成形为与要冷却的电子器件配合。
现在参考图7和8描述上述散热组件元件在集成电路器件冷却情况下的应用。集成电路器件741包括由一层或多层相对便宜的介电材料组成的电互连支承结构742，所述介电材料例如是聚酰胺或其他聚合物电介质，或者具有相对高CTE的环氧材料。支承结构742支承如前结合基体110、210和310以及图1到8所述的，为专用性质而选择的散热基体743。
从散热基体743的上表面746伸出的散热柱745支承微型芯片或管芯744。散热柱745和散热基体743分开制造，并随后通过铜焊、电阻焊、超声焊接、压制即高压下冷扩散、软焊、粘合、压配合、螺钉、铆钉、扩散连接或使用粘接层751来安装到散热基体743上，所述粘接层751由导热粘接材料或其他厚度由热性能要求确定的薄粘接材料组成。一系列连接线747将管芯744上的接触点连接到在支承结构742的表面749上或体内图案化的敷金属(metalization)748。敷金属连接到从集成电路器件741向外伸出的多个导片750。散热基体743可改变尺寸/形状以使得可形成未示出的部分封装结构。
应注意到为了减少集成电路器件中的散热成本，可从各种一般材料、尺寸和形状中根据其散热性质、小质量、环境条件电阻、价格等等来选择散热基体743。为了分散并减少器件不同元件的接点处的机械应力，选择用于支承结构742的材料以具有介于散热基体743和敷金属748之间的CTE。从各种材料中选择散热柱745以提供介于散热基体743和集成电路管芯744之间的CTE，同时具有其他所需的专用特征，例如定制匹配于管芯的CTE、调整尺寸、环境电阻、价格和质量等等。
本发明可允许最终用户按具体应用精确选择散热器的各种特征。散热器的主体或基体可以是一般的尺寸、形状和材料以优化散热器的所选特征，例如导热性、小质量、便宜的材料、便宜的制造工艺、环境电阻和可粘接性等等。同时可选择连接表面或金属条(slug)的材料、尺寸和形状或按具体应用来定制，以优化所选的特征，例如和要冷却的器件间提高的CTE匹配、可粘接性和精度公差的可加工性等等。
应注意到散热柱的专用形状可在安装到散热基体上之前或之后形成。而且，散热柱可在安装到散热基体上之前或之后安装到要冷却的器件上。而且，尽管图7到8图示了被冷却的集成电路器件744，但本发明同样可应用于印刷电路板、多芯片模块和预封装器件等等而不会偏离本发明的基本概念。
实施例一到四还可应用于这样的情况，其中可利用散热基体来冷却多个集成电路、管芯、印刷电路组件或多芯片模块中的元件。基本地，组件中的多个电子元件可利用带不同散热柱的单个散热基体，所述散热柱置于每个要冷却的电子元件和该散热基体之间。
通过仅仅是示例的图示，图9示出了根据本发明第五实施例的散热装置，其中第一散热柱920和第二散热柱930安装到散热基体910上。从相似或不同的材料中选择或形成散热柱920和930以得到所需的特定特征，例如匹配于第一和第二管芯或电子组件(未示出)的CTE，如此处关于图1到8所教导地那样。
如图10所示，可以这样来制造散热装置900，即如关于图1到8所教导的那样，在步骤1010中，从不同尺寸、形状和材料的各种一般基体中选择，或从为专用特征而选择的特定散热材料来形成基体910。在步骤1020和1040中，散热柱920和930可由相似或不同的材料形成并安装到基体910上，如图1到8中所教导地为具体应用所需的特征而选择所述材料。电子元件(在图9中未示出)安装到散热柱920和930上。这些步骤可以按任何顺序形成，并且基体910或柱920和930中的任何一个或全部都可以是现有的一般元件，并为具体的应用而选择和装配或者对具体的应用进行定制。
应注意到柱920和930可用相似或不同的方法，由相似或不同的材料来形成，这取决于要安装到每个柱上的电子元件所需的特定特征和要求。在散热基体910与单个的生热器件或者集成电路或多芯片模块的区域之间，可安装多于两个的散热柱。而且，在散热基体的上表面和下表面上都可安装散热柱，仅由接近度、散热要求、尺寸、重量和组件中有散热要求的其他器件所限制。
图11图示了包括电子互连支承结构1142的电子组件1141，电子互连支承结构1142由一层或多层介电材料组成，例如聚酰胺或其他聚合物电介质或环氧材料。支承结构1142安装到散热基体1143上，散热基体1143由为专用特性和特征而选择的散热材料组成，如关于图1到8所描述的那样。
两个或更多的微芯片或管芯1144和1154分别由从散热基体1143的上表面伸出的散热柱1145和1155支承。散热柱1145和1155可与散热基体1143分开制造，并通过铜焊、电阻焊、超声焊接、压制即高压下冷扩散、软焊、粘合、压配合、螺钉、铆钉、扩散连接或粘接层(未示出)而安装到散热基体1143上，所述粘接层由导热粘接材料或其他厚度由热性能要求所确定的薄粘接材料组成。一系列连接线1147将管芯1144和1154上的接触点连接到在支承结构1142的表面上或体内图案化的敷金属层或多层1148上。敷金属连接到从电子组件或多芯片模块1141向外伸出的多个导片1150。散热基体1143可改变尺寸/形状以使得它可为电子组件形成部分封装结构(未示出)。
为了减少电子组件或多芯片模块1141的成本，可从各种一般材料、尺寸和形状中根据其导热性、小质量、环境电阻、价格等等来选择散热基体1143。为了分散并减少组件不同元件的接点处的机械应力，选择用于支承结构1142的材料以具有介于散热基体1143和敷金属层1148之间的CTE。可以从各种材料中选择散热柱1145和1155以提供介于散热基体1143与管芯1144和1154之间的CTE，同时具有其他所需的专用特征，例如定制匹配于管芯的CTE、调整尺寸、环境电阻、价格、质量和可加工性等等。
尽管已为说明目的公开了本发明的优选实施例，但本领域技术人员将理解各种修改、附加和替代都是可以的，并不会偏离本发明的范围，而产生仍在所附权利要求范围内的等价实施例。例如，一般的散热基体还可以是带散热片或其他常用散热物理特征的散热基体。

Claims (18)

1.一种专用散热器件，用于从多个电子元件散热，所述专用散热器件包括：
散热基体，根据一个或多个以下特性来选取：尺寸、形状、质量、成本、导热性、环境电阻；和
多个散热柱，其中每个散热柱根据其热膨胀系数和可加工性来选取，并且其中每个散热柱被安装在所述散热基体上，从而使得电子元件可以安装在每个散热柱上。
2.如权利要求1所述的专用散热器件，其中所述散热基体包括碳化硅铝。
3.如权利要求1所述的专用散热器件，其中所述散热基体包括碳金属合金。
4.如权利要求1所述的专用散热器件，其中所述散热基体包括陶瓷。
5.如权利要求1所述的专用散热器件，其中所述散热基体包括散热片。
6.如权利要求1所述的专用散热器件，其中，每个散热柱包括如下材料，即所述材料具有与安装在所述散热柱上的电子元件的热膨胀系数比较接近的热膨胀系数。
7.如权利要求1所述的专用散热器件，其中，每个散热柱包括如下材料，即所述材料具有介于安装在所述散热柱上的电子元件的热膨胀系数和所述散热基体的热膨胀系数之间相对中间的热膨胀系数。
8.如权利要求1所述的专用散热器件，其中，每个散热柱包括金属、金属合金或其组合。
9.如权利要求1所述的专用散热器件，其中所述散热基体在第一表面上包括一个或多个腔，其中至少一个散热柱在所述散热基体第一表面上的所述一个或多个腔内被安装到所述散热基体上，其中所述腔提供了对准的方法。
10.如权利要求1所述的专用散热器件，其中所述散热柱中的一个或多个是这样形成的，即通过在散热基体的顶表面形成由根据应用特别选择的材料所构成的层，然后从所述根据应用特别选择的材料形成一个或多个所述散热柱。
11.如权利要求10所述的专用散热器件，其中，从由所述根据应用特别选择的材料构成的层机械加工、激光切割或化学刻蚀出所述一个或多个散热柱，来形成所述一个或多个散热柱。
12.一种制造专用散热器件的方法，包括：
选取散热基体；
形成多个散热柱，其中每个散热柱成形并定尺寸以使其与待冷却的电子器件匹配；以及
将所述多个散热柱安装在所述散热基体上的预定位置。
13.如权利要求12所述的方法，其中所述散热基体包括碳化硅铝。
14.如权利要求12所述的方法，其中，所述一个或多个散热柱中的每一个都包括如下材料，即所述材料被选择为具有与安装在所述散热柱上的电子元件的热膨胀系数比较接近的热膨胀系数。
15.如权利要求12所述的方法，其中，所述一个或多个散热柱中的每一个都包括如下材料，即所述材料被选择为具有处于所述散热基体的热膨胀系数和安装在所述散热柱上的电子元件的热膨胀系数之间相对中间的热膨胀系数。
16.如权利要求12所述的方法，其中，根据一个或多个以下特性选取所述散热基体：导热性、环境电阻、低质量、便宜的价格、或可粘接性。
17.如权利要求12所述的方法，还包括在所述散热基体的顶表面形成一个或多个腔的步骤；其中，两个或多个所述散热柱中的一个或多个安装在所述散热基体上所形成的所述一个或多个腔中。
18.如权利要求12所述的方法，其中，所述散热基体包括散热片。
CNA2004100004174A 2003-04-30 2004-01-18 用于从多个电子元件散热的专用装置 Pending CN1542952A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/427,219 2003-04-30
US10/427,219 US20040226688A1 (en) 2003-04-30 2003-04-30 Application specific apparatus for dissipating heat from multiple electronic components

Publications (1)

Publication Number Publication Date
CN1542952A true CN1542952A (zh) 2004-11-03

Family

ID=32176766

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2004100004174A Pending CN1542952A (zh) 2003-04-30 2004-01-18 用于从多个电子元件散热的专用装置

Country Status (5)

Country Link
US (1) US20040226688A1 (zh)
JP (1) JP2004336046A (zh)
CN (1) CN1542952A (zh)
DE (1) DE10360866A1 (zh)
GB (1) GB2401480A (zh)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101752328A (zh) * 2008-12-18 2010-06-23 财团法人工业技术研究院 半芯片封装结构及其制造方法
US7989948B2 (en) 2008-12-05 2011-08-02 Industrial Technology Research Institute Chip package structure and method of fabricating the same
CN105246298A (zh) * 2015-10-23 2016-01-13 惠州市杰普特电子技术有限公司 激光导热装置
CN105263297A (zh) * 2015-10-23 2016-01-20 惠州市杰普特电子技术有限公司 激光隔热装置

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050180111A1 (en) * 2004-02-18 2005-08-18 Bamesberger Brett E. Low thermal stress composite heat sink assembly
US20060221571A1 (en) * 2005-03-30 2006-10-05 Oberlin Gary E Thermal conductor and use thereof
TW200729437A (en) * 2005-10-20 2007-08-01 Creative Led Gmbh Package casing for semiconductor chip and heat dissipation structure thereof
US20100133668A1 (en) * 2008-12-02 2010-06-03 Chung Hsing Tzu Semiconductor device and manufacturing method thereof
US8018051B2 (en) 2009-02-02 2011-09-13 Maxim Integrated Products, Inc. Thermally enhanced semiconductor package

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3780795A (en) * 1972-06-19 1973-12-25 Rca Corp Multilayer heat sink
US4769744A (en) * 1983-08-04 1988-09-06 General Electric Company Semiconductor chip packages having solder layers of enhanced durability
FR2629153B1 (fr) * 1988-03-22 1990-05-04 Bull Sa Dispositif de fixation a pression de deux pieces l'une a l'autre
JPH0612795B2 (ja) * 1989-11-07 1994-02-16 株式会社日立製作所 マルチチップモジュールの冷却構造
FR2659163B1 (fr) * 1990-03-02 1993-09-03 Roulet Paul Antoine Support a l'epaule pour violon.
US5208731A (en) * 1992-01-17 1993-05-04 International Electronic Research Corporation Heat dissipating assembly
US5280409A (en) * 1992-10-09 1994-01-18 Sun Microsystems, Inc. Heat sink and cover for tab integrated circuits
DE69304304T2 (de) * 1993-04-05 1997-01-02 Sgs Thomson Microelectronics Kombination einer elektronischen Halbleiteranordnung und einer Wärmesenke
US5972737A (en) * 1993-04-14 1999-10-26 Frank J. Polese Heat-dissipating package for microcircuit devices and process for manufacture
US5886407A (en) * 1993-04-14 1999-03-23 Frank J. Polese Heat-dissipating package for microcircuit devices
US5396402A (en) * 1993-05-24 1995-03-07 Burndy Corporation Appliance for attaching heat sink to pin grid array and socket
US5594624A (en) * 1994-04-05 1997-01-14 Thermalloy, Inc. Strap spring for heat sink clip assembly
US5615735A (en) * 1994-09-29 1997-04-01 Hewlett-Packard Co. Heat sink spring clamp
JPH08111481A (ja) * 1994-10-12 1996-04-30 Tokyo Tungsten Co Ltd 半導体用ヒートシンク
JPH08186204A (ja) * 1994-11-02 1996-07-16 Nippon Tungsten Co Ltd ヒートシンク及びその製造方法
US5570271A (en) * 1995-03-03 1996-10-29 Aavid Engineering, Inc. Heat sink assemblies
US5621615A (en) * 1995-03-31 1997-04-15 Hewlett-Packard Company Low cost, high thermal performance package for flip chips with low mechanical stress on chip
DE69603664T2 (de) * 1995-05-30 2000-03-16 Motorola, Inc. Hybrid-Multichip-Modul und Verfahren zur seiner Herstellung
US5581441A (en) * 1995-06-07 1996-12-03 At&T Global Information Solutions Company Electrically-operated heat exchanger release mechanism
US5850691A (en) * 1995-07-20 1998-12-22 Dell Usa, L. P. Method for securing an electronic component to a pin grid array socket
US5734556A (en) * 1996-06-26 1998-03-31 Sun Microsystems, Inc. Mechanical heat sink attachment having two pin headers and a spring clip
US6395991B1 (en) * 1996-07-29 2002-05-28 International Business Machines Corporation Column grid array substrate attachment with heat sink stress relief
US5932925A (en) * 1996-09-09 1999-08-03 Intricast, Inc. Adjustable-pressure mount heatsink system
US5990552A (en) * 1997-02-07 1999-11-23 Intel Corporation Apparatus for attaching a heat sink to the back side of a flip chip package
US6118659A (en) * 1998-03-09 2000-09-12 International Business Machines Corporation Heat sink clamping spring additionally holding a ZIF socket locked
TW392869U (en) * 1998-09-04 2000-06-01 Hon Hai Prec Ind Co Ltd Heat sink for chips
JP3548444B2 (ja) * 1998-12-17 2004-07-28 キヤノン株式会社 半導体集積回路
US6198630B1 (en) * 1999-01-20 2001-03-06 Hewlett-Packard Company Method and apparatus for electrical and mechanical attachment, and electromagnetic interference and thermal management of high speed, high density VLSI modules
US6219239B1 (en) * 1999-05-26 2001-04-17 Hewlett-Packard Company EMI reduction device and assembly
US6390475B1 (en) * 1999-08-31 2002-05-21 Intel Corporation Electro-mechanical heat sink gasket for shock and vibration protection and EMI suppression on an exposed die
US6208517B1 (en) * 1999-09-10 2001-03-27 Legerity, Inc. Heat sink
JP2001085580A (ja) * 1999-09-14 2001-03-30 Sumitomo Metal Electronics Devices Inc 半導体モジュール用基板及びその製造方法
US6462951B2 (en) * 2000-04-10 2002-10-08 Alcatal Canada Inc. Securing heat sinks to electronic components
US6299460B1 (en) * 2000-04-14 2001-10-09 Hewlett Packard Company Spring-loaded backing plate assembly for use with land grid array-type devices
US6496371B2 (en) * 2001-03-30 2002-12-17 Intel Corporation Heat sink mounting method and apparatus
US6518507B1 (en) * 2001-07-20 2003-02-11 Hon Hai Precision Ind. Co., Ltd. Readily attachable heat sink assembly
TW499151U (en) * 2001-07-20 2002-08-11 Foxconn Prec Components Co Ltd Buckling divide for heat sink

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7989948B2 (en) 2008-12-05 2011-08-02 Industrial Technology Research Institute Chip package structure and method of fabricating the same
CN101752328A (zh) * 2008-12-18 2010-06-23 财团法人工业技术研究院 半芯片封装结构及其制造方法
CN105246298A (zh) * 2015-10-23 2016-01-13 惠州市杰普特电子技术有限公司 激光导热装置
CN105263297A (zh) * 2015-10-23 2016-01-20 惠州市杰普特电子技术有限公司 激光隔热装置
CN105246298B (zh) * 2015-10-23 2018-05-18 惠州市杰普特电子技术有限公司 激光导热装置

Also Published As

Publication number Publication date
GB0406231D0 (en) 2004-04-21
JP2004336046A (ja) 2004-11-25
DE10360866A1 (de) 2004-11-25
GB2401480A (en) 2004-11-10
US20040226688A1 (en) 2004-11-18

Similar Documents

Publication Publication Date Title
EP2892074B1 (en) Power module substrate and power module
CN101291769B (zh) 复合材料及其制造方法、复合材料的成型方法、使用复合材料的散热基板
US7342306B2 (en) High performance reworkable heatsink and packaging structure with solder release layer
US6335491B1 (en) Interposer for semiconductor package assembly
CN100359676C (zh) 具有向下支架附着特征的热扩散器
EP1460688A2 (en) Resin sealed electronic assembly and method of manufacturing the same
CN105190874A (zh) 半导体模块及半导体装置
CN101321437A (zh) 电子部件内置组件及其制造方法
US6833617B2 (en) Composite material including copper and cuprous oxide and application thereof
EP1255297A2 (en) Electrically isolated power device package
CN1542952A (zh) 用于从多个电子元件散热的专用装置
US5640304A (en) Power electronic device mounting apparatus
US20050180111A1 (en) Low thermal stress composite heat sink assembly
DE102014100309A1 (de) Chipanordnung und verfahren zum bilden einer chipanordnung
US7468554B2 (en) Heat sink board and manufacturing method thereof
CN1768424A (zh) 热接口设备、系统和方法
CN1542953A (zh) 热膨胀系数匹配的专用散热器组件
Park et al. A suggestion for high power LED package based on LTCC
EP1729342A1 (en) Heat sink board and manufacturing method thereof
US20040218363A1 (en) Application specific heat-dissipating apparatus that provides electrical isolation for components
US20040218364A1 (en) Application specific heatsink assembly
JPH0750369A (ja) 半導体用セラミックス放熱体およびその製造方法
JPH0677678A (ja) ヒートシンク構造
JP7159343B2 (ja) 配線基板、複合基板および電気装置
KR20230148113A (ko) 반도체 디바이스 어셈블리

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication