CN1534603A - 磁阻效应磁头及其制造方法 - Google Patents
磁阻效应磁头及其制造方法 Download PDFInfo
- Publication number
- CN1534603A CN1534603A CNA200310102384XA CN200310102384A CN1534603A CN 1534603 A CN1534603 A CN 1534603A CN A200310102384X A CNA200310102384X A CN A200310102384XA CN 200310102384 A CN200310102384 A CN 200310102384A CN 1534603 A CN1534603 A CN 1534603A
- Authority
- CN
- China
- Prior art keywords
- mentioned
- domain control
- magnetic domain
- film
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3929—Disposition of magnetic thin films not used for directly coupling magnetic flux from the track to the MR film or for shielding
- G11B5/3932—Magnetic biasing films
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3109—Details
- G11B5/3116—Shaping of layers, poles or gaps for improving the form of the electrical signal transduced, e.g. for shielding, contour effect, equalizing, side flux fringing, cross talk reduction between heads or between heads and information tracks
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3109—Details
- G11B5/313—Disposition of layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3967—Composite structural arrangements of transducers, e.g. inductive write and magnetoresistive read
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/4902—Electromagnet, transformer or inductor
- Y10T29/49021—Magnetic recording reproducing transducer [e.g., tape head, core, etc.]
- Y10T29/49032—Fabricating head structure or component thereof
- Y10T29/49048—Machining magnetic material [e.g., grinding, etching, polishing]
- Y10T29/49052—Machining magnetic material [e.g., grinding, etching, polishing] by etching
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Magnetic Heads (AREA)
- Hall/Mr Elements (AREA)
Abstract
Description
样品号No: | 磁畴控制底层 | 底层成膜前处理 | 底层 |
1 | - | 暴露在大气中 | 底层A |
2 | Cr10nm | 暴露在大气中 | 底层A |
3 | Cr10nm | 暴露在大气中 | Ta1nm→暴露在大气中→底层A |
4 | Cr10nm | 暴露在大气中→等离子氧化 | 底层A |
5 | Cr10nm | 暴露在大气中→等离子氧化 | Ta1nm→暴露在大气中→底层A |
Claims (8)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003093134 | 2003-03-31 | ||
JP2003093134A JP2004303309A (ja) | 2003-03-31 | 2003-03-31 | 磁気抵抗効果ヘッド及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1534603A true CN1534603A (zh) | 2004-10-06 |
CN1265357C CN1265357C (zh) | 2006-07-19 |
Family
ID=32985384
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB200310102384XA Expired - Fee Related CN1265357C (zh) | 2003-03-31 | 2003-10-23 | 磁阻效应磁头及其制造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7209327B2 (zh) |
JP (1) | JP2004303309A (zh) |
CN (1) | CN1265357C (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105911103A (zh) * | 2016-04-13 | 2016-08-31 | 南京工业大学 | 钉扎型自旋阀结构、生物磁传感器、生物分子检测方法 |
CN113330582A (zh) * | 2019-01-31 | 2021-08-31 | Tdk株式会社 | 自旋轨道转矩型磁化旋转元件、自旋轨道转矩型磁阻效应元件、磁存储器及储备池元件 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4445409B2 (ja) * | 2005-02-23 | 2010-04-07 | 株式会社東芝 | 電子機器の放熱装置 |
JP4810275B2 (ja) * | 2006-03-30 | 2011-11-09 | アルプス電気株式会社 | 磁気スイッチ |
JP2008084446A (ja) * | 2006-09-28 | 2008-04-10 | Fujitsu Ltd | 磁気ヘッドおよびその製造方法 |
US7990659B2 (en) * | 2007-07-09 | 2011-08-02 | International Business Machines Corporation | Magnetic head with protective films |
US8254066B2 (en) * | 2008-12-30 | 2012-08-28 | Hitachi Global Storage Technologies Netherlands B.V. | Technique for measuring process induced magnetic anisotropy in a magnetoresistive sensor |
JP6244402B2 (ja) * | 2016-05-31 | 2017-12-06 | 東京エレクトロン株式会社 | 磁気抵抗素子の製造方法及び磁気抵抗素子の製造システム |
JP6508381B1 (ja) | 2018-03-22 | 2019-05-08 | Tdk株式会社 | 磁気センサ装置 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5315468A (en) * | 1992-07-28 | 1994-05-24 | International Business Machines Corporation | Magnetoresistive sensor having antiferromagnetic layer for exchange bias |
US6278595B1 (en) * | 1998-01-27 | 2001-08-21 | Seagate Technology Llc | Magnetoresistive sensor having a hard-biasing material and a cubic-titanium-tungsten underlayer |
US6086727A (en) * | 1998-06-05 | 2000-07-11 | International Business Machines Corporation | Method and apparatus to improve the properties of ion beam deposited films in an ion beam sputtering system |
JP3234814B2 (ja) * | 1998-06-30 | 2001-12-04 | 株式会社東芝 | 磁気抵抗効果素子、磁気ヘッド、磁気ヘッドアセンブリ及び磁気記録装置 |
JP2000222709A (ja) * | 1999-02-01 | 2000-08-11 | Read Rite Smi Kk | スピンバルブ磁気抵抗センサ及び薄膜磁気ヘッド |
US6770382B1 (en) * | 1999-11-22 | 2004-08-03 | Headway Technologies, Inc. | GMR configuration with enhanced spin filtering |
US6447689B1 (en) * | 2000-06-05 | 2002-09-10 | Headway Technologies, Inc. | Protective layer for continuous GMR design using reverse photo mask |
US6428714B1 (en) * | 2000-06-05 | 2002-08-06 | Headway Technologies, Inc. | Protective layer for continuous GMR design |
JP2002151755A (ja) | 2000-11-08 | 2002-05-24 | Alps Electric Co Ltd | 磁気抵抗効果素子及びその製造方法、ならびに前記磁気抵抗効果素子を用いた薄膜磁気ヘッド |
-
2003
- 2003-03-31 JP JP2003093134A patent/JP2004303309A/ja active Pending
- 2003-09-30 US US10/676,415 patent/US7209327B2/en not_active Expired - Fee Related
- 2003-10-23 CN CNB200310102384XA patent/CN1265357C/zh not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105911103A (zh) * | 2016-04-13 | 2016-08-31 | 南京工业大学 | 钉扎型自旋阀结构、生物磁传感器、生物分子检测方法 |
CN113330582A (zh) * | 2019-01-31 | 2021-08-31 | Tdk株式会社 | 自旋轨道转矩型磁化旋转元件、自旋轨道转矩型磁阻效应元件、磁存储器及储备池元件 |
Also Published As
Publication number | Publication date |
---|---|
JP2004303309A (ja) | 2004-10-28 |
CN1265357C (zh) | 2006-07-19 |
US7209327B2 (en) | 2007-04-24 |
US20040190206A1 (en) | 2004-09-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: HITACHI GLOBAL STORAGE TECHNOLOGIES JAPAN LTD. Free format text: FORMER OWNER: HITACHI CO., LTD. Effective date: 20080418 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20080418 Address after: Kanagawa Patentee after: Hitachi Global Scinece Technology Jappan Co., Ltd. Address before: Tokyo, Japan, Japan Patentee before: Hitachi Ltd. |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20060719 Termination date: 20151023 |
|
EXPY | Termination of patent right or utility model |