CN1265357C - 磁阻效应磁头及其制造方法 - Google Patents
磁阻效应磁头及其制造方法 Download PDFInfo
- Publication number
- CN1265357C CN1265357C CNB200310102384XA CN200310102384A CN1265357C CN 1265357 C CN1265357 C CN 1265357C CN B200310102384X A CNB200310102384X A CN B200310102384XA CN 200310102384 A CN200310102384 A CN 200310102384A CN 1265357 C CN1265357 C CN 1265357C
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- domain control
- magnetic domain
- film
- layer
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- Expired - Fee Related
Links
- 230000000694 effects Effects 0.000 title claims description 37
- 238000000034 method Methods 0.000 title claims description 17
- 230000005381 magnetic domain Effects 0.000 claims abstract description 122
- 230000015572 biosynthetic process Effects 0.000 claims description 21
- 230000005415 magnetization Effects 0.000 claims description 16
- 230000000873 masking effect Effects 0.000 claims description 16
- 230000005303 antiferromagnetism Effects 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 230000001681 protective effect Effects 0.000 claims description 9
- 238000000992 sputter etching Methods 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 7
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 239000012528 membrane Substances 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 4
- 229910052748 manganese Inorganic materials 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 229910052720 vanadium Inorganic materials 0.000 claims description 3
- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 description 100
- 229910045601 alloy Inorganic materials 0.000 description 11
- 239000000956 alloy Substances 0.000 description 11
- 238000002203 pretreatment Methods 0.000 description 9
- 230000003647 oxidation Effects 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 7
- 230000005477 standard model Effects 0.000 description 7
- 238000009413 insulation Methods 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 6
- 230000005389 magnetism Effects 0.000 description 6
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 5
- 125000006850 spacer group Chemical group 0.000 description 5
- 229910003321 CoFe Inorganic materials 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 230000009471 action Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 239000000696 magnetic material Substances 0.000 description 4
- 229910019222 CoCrPt Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 229910019041 PtMn Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 230000008929 regeneration Effects 0.000 description 2
- 238000011069 regeneration method Methods 0.000 description 2
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- 229910052715 tantalum Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3929—Disposition of magnetic thin films not used for directly coupling magnetic flux from the track to the MR film or for shielding
- G11B5/3932—Magnetic biasing films
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3109—Details
- G11B5/3116—Shaping of layers, poles or gaps for improving the form of the electrical signal transduced, e.g. for shielding, contour effect, equalizing, side flux fringing, cross talk reduction between heads or between heads and information tracks
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3109—Details
- G11B5/313—Disposition of layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3967—Composite structural arrangements of transducers, e.g. inductive write and magnetoresistive read
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/4902—Electromagnet, transformer or inductor
- Y10T29/49021—Magnetic recording reproducing transducer [e.g., tape head, core, etc.]
- Y10T29/49032—Fabricating head structure or component thereof
- Y10T29/49048—Machining magnetic material [e.g., grinding, etching, polishing]
- Y10T29/49052—Machining magnetic material [e.g., grinding, etching, polishing] by etching
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Magnetic Heads (AREA)
- Hall/Mr Elements (AREA)
Abstract
Description
样品号No: | 磁畴控制底层 | 底层成膜前处理 | 底层 |
1 | - | 暴露在大气中 | 底层A |
2 | Cr10nm | 暴露在大气中 | 底层A |
3 | Cr10nm | 暴露在大气中 | Ta1nm→暴露在大气中→底层A |
4 | Cr10nm | 暴露在大气中→等离子氧化 | 底层A |
5 | Cr10nm | 暴露在大气中→等离子氧化 | Ta1nm→暴露在大气中→底层A |
Claims (8)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003093134 | 2003-03-31 | ||
JP2003093134A JP2004303309A (ja) | 2003-03-31 | 2003-03-31 | 磁気抵抗効果ヘッド及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1534603A CN1534603A (zh) | 2004-10-06 |
CN1265357C true CN1265357C (zh) | 2006-07-19 |
Family
ID=32985384
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB200310102384XA Expired - Fee Related CN1265357C (zh) | 2003-03-31 | 2003-10-23 | 磁阻效应磁头及其制造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7209327B2 (zh) |
JP (1) | JP2004303309A (zh) |
CN (1) | CN1265357C (zh) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4445409B2 (ja) * | 2005-02-23 | 2010-04-07 | 株式会社東芝 | 電子機器の放熱装置 |
JP4810275B2 (ja) * | 2006-03-30 | 2011-11-09 | アルプス電気株式会社 | 磁気スイッチ |
JP2008084446A (ja) * | 2006-09-28 | 2008-04-10 | Fujitsu Ltd | 磁気ヘッドおよびその製造方法 |
US7990659B2 (en) * | 2007-07-09 | 2011-08-02 | International Business Machines Corporation | Magnetic head with protective films |
US8254066B2 (en) * | 2008-12-30 | 2012-08-28 | Hitachi Global Storage Technologies Netherlands B.V. | Technique for measuring process induced magnetic anisotropy in a magnetoresistive sensor |
CN105911103A (zh) * | 2016-04-13 | 2016-08-31 | 南京工业大学 | 钉扎型自旋阀结构、生物磁传感器、生物分子检测方法 |
JP6244402B2 (ja) * | 2016-05-31 | 2017-12-06 | 東京エレクトロン株式会社 | 磁気抵抗素子の製造方法及び磁気抵抗素子の製造システム |
JP6508381B1 (ja) * | 2018-03-22 | 2019-05-08 | Tdk株式会社 | 磁気センサ装置 |
WO2020157912A1 (ja) * | 2019-01-31 | 2020-08-06 | Tdk株式会社 | スピン軌道トルク型磁化回転素子、スピン軌道トルク型磁気抵抗効果素子、磁気メモリ及びリザボア素子 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5315468A (en) | 1992-07-28 | 1994-05-24 | International Business Machines Corporation | Magnetoresistive sensor having antiferromagnetic layer for exchange bias |
US6278595B1 (en) | 1998-01-27 | 2001-08-21 | Seagate Technology Llc | Magnetoresistive sensor having a hard-biasing material and a cubic-titanium-tungsten underlayer |
US6086727A (en) * | 1998-06-05 | 2000-07-11 | International Business Machines Corporation | Method and apparatus to improve the properties of ion beam deposited films in an ion beam sputtering system |
JP3234814B2 (ja) * | 1998-06-30 | 2001-12-04 | 株式会社東芝 | 磁気抵抗効果素子、磁気ヘッド、磁気ヘッドアセンブリ及び磁気記録装置 |
JP2000222709A (ja) | 1999-02-01 | 2000-08-11 | Read Rite Smi Kk | スピンバルブ磁気抵抗センサ及び薄膜磁気ヘッド |
US6770382B1 (en) * | 1999-11-22 | 2004-08-03 | Headway Technologies, Inc. | GMR configuration with enhanced spin filtering |
US6428714B1 (en) * | 2000-06-05 | 2002-08-06 | Headway Technologies, Inc. | Protective layer for continuous GMR design |
US6447689B1 (en) * | 2000-06-05 | 2002-09-10 | Headway Technologies, Inc. | Protective layer for continuous GMR design using reverse photo mask |
JP2002151755A (ja) | 2000-11-08 | 2002-05-24 | Alps Electric Co Ltd | 磁気抵抗効果素子及びその製造方法、ならびに前記磁気抵抗効果素子を用いた薄膜磁気ヘッド |
-
2003
- 2003-03-31 JP JP2003093134A patent/JP2004303309A/ja active Pending
- 2003-09-30 US US10/676,415 patent/US7209327B2/en not_active Expired - Fee Related
- 2003-10-23 CN CNB200310102384XA patent/CN1265357C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20040190206A1 (en) | 2004-09-30 |
US7209327B2 (en) | 2007-04-24 |
CN1534603A (zh) | 2004-10-06 |
JP2004303309A (ja) | 2004-10-28 |
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GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: HITACHI GLOBAL STORAGE TECHNOLOGIES JAPAN LTD. Free format text: FORMER OWNER: HITACHI CO., LTD. Effective date: 20080418 |
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Effective date of registration: 20080418 Address after: Kanagawa Patentee after: Hitachi Global Scinece Technology Jappan Co., Ltd. Address before: Tokyo, Japan, Japan Patentee before: Hitachi Ltd. |
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Granted publication date: 20060719 Termination date: 20151023 |
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