CN1527385A - Multilayer composite metal capacitor structure - Google Patents

Multilayer composite metal capacitor structure Download PDF

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Publication number
CN1527385A
CN1527385A CNA031202438A CN03120243A CN1527385A CN 1527385 A CN1527385 A CN 1527385A CN A031202438 A CNA031202438 A CN A031202438A CN 03120243 A CN03120243 A CN 03120243A CN 1527385 A CN1527385 A CN 1527385A
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type electrode
electrode
level
odd
multilayer
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CN100359692C (en
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蔡则伦
贾育台
郭治群
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Abstract

The multilayer interdigitated metal capacitor structure has its each layer comprising two comb-shaped metal electrodes interdigitated mutually and of different polarities, and each two adjacent layers with comb structures perpendicular to each other. The metal electrodes in the same polarity are connected through the via hole beside the comb structures, and each two adjacent metal electrodes are separated with dielectric material.

Description

Multilayer fork metal capacitance structure
Technical field
The present invention relates to a kind of multilayer fork and close (Interdigitated) metal capacitor structure, particularly the multilayer fork metal capacitance structure that is perpendicular to one another of a kind of electrode of adjacent layer.
Background technology
Along with the integrated level of integrated circuit improves constantly, make to be widely used in passive component on the integrated circuit that capacitor etc. for example is also thereupon constantly towards the trend development that promotes integrated level.For adapting to this trend, developed at present a kind of multilayer fork that forms by several layers of metal stack and close capacitance structure.Because this multilayer fork closes capacitance structure and can be formed by multiple layer metal electrode storehouse, therefore has higher integrated level, makes unit are have higher capacitance density.In addition, on making, existing mask and processing step can be used, therefore the technology cost can be reduced because this multilayer fork closes capacitance structure.
Please refer to Fig. 1, Fig. 1 illustrates the schematic top plan view of existing multilayer fork metal capacitance structure.Because all parallel to each other and last push-down stack of pectinate texture of each layer of present multilayer fork metal capacitance structure, therefore the fork of the multilayer in Fig. 1 metal capacitance structure vertical view can be represented the vertical view of the fork metal capacitance structure of the superiors, also can represent the vertical view of each layer fork metal capacitance structure.This layer fork metal capacitance structure mainly is made of electrode 104 and electrode 112, and wherein electrode 112 is anodal, and electrode 104 is a negative pole.Electrode 104 comprises shank 100 and a plurality of pars pectinatas 102, and wherein these pars pectinatas 102 are parallel to each other and separated by a distance and be engaged on one side of shank 100.Same, electrode 112 is made of shank 108 and a plurality of pars pectinata 110, and wherein these pars pectinatas 110 are parallel to each other and separated by a distance each other and be engaged on one side of shank 108.
In addition, the below of the shank 100 of electrode 104 also has in the dielectric materials layer (not illustrating) of a plurality of interlayer holes (Via) 106 between two-layer capacitance structure, be used for electrically connecting electrode 104 and the same polarity electrode (see also Fig. 2, only illustrate pars pectinata 118 wherein) under it.And the below of the shank 108 of electrode 112 also has the dielectric materials layer of a plurality of interlayer holes 114 between two-layer capacitance structure, is used for electrically connecting electrode 112 and the same polarity electrode (see also Fig. 2, only illustrate pars pectinata 116 wherein) under it.The pars pectinata 102 of electrode 104 is pitched mutually with the pars pectinata of electrode 112 110 and is closed, and pars pectinata 102 and pars pectinata 110 are staggered.In addition, also be filled with dielectric material (not illustrating) between electrode 104 and the electrode 112, electrode 104, electrode 112 and the dielectric material between electrode 104 and electrode 112 then constitute one deck fork and close capacitance structure.
Then, please refer to Fig. 2, Fig. 2 illustrates the generalized section that is obtained along the I-I hatching of the multilayer fork metal capacitance structure of Fig. 1, wherein for the storehouse mode of clear expression electrode, does not show the dielectric materials layer between the two-layer electrode.Because the pars pectinata of the electrode of same polarity is parallel to each other and last push-down stack, therefore the pars pectinata 102 of the pars pectinata 110 of the electrode 112 of the superiors and electrode 104 respectively storehouses at it down on the pars pectinata 116 and pars pectinata 118 of the electrode of one deck, pars pectinata 116 and pars pectinata 118 then respectively storehouse at it down on the pars pectinata 120 and pars pectinata 122 of the electrode of one deck.
Because each layer fork closes the pectinate texture electrode of electric capacity and all needs storehouse parallel to each other, therefore on making, be easy to produce skew because of fabrication error causes electrode position, therefore process window (Process Window) can be dwindled, and technology difficulty also can significantly increase.And the skew of electrode position not only can cause the capacitance between layer and the layer to change, and also can influence the total capacitance value of whole capacitor structure.
Summary of the invention
In above-mentioned existing multilayer fork metal capacitance structure, the pectinate texture of the metal electrode in wantonly two adjacent layers must be parallel and superimposed, so, alignment error takes place in manufacturing process very easily, and cause the capacitance between layer and the layer to change, and then influence total capacitance value.
Therefore, one of main purpose of the present invention just provides a kind of multilayer fork metal capacitance structure, and the pectinate texture of the electrode of its wantonly two adjacent layers is orthogonal, thereby can need to make each layer all accurately to aim at as prior art.Therefore, not only technology is simply easy to implement, and has wider process window.
The mutually perpendicular multilayer fork of the electrode pectinate texture metal capacitance structure that another purpose of the present invention just provides a kind of two adjacent layers up and down can effectively improve the alignment error problem.Therefore, can reduce the capacitance variation that is caused because of levels electrode alignment error.
For achieving the above object, the invention provides a kind of multilayer fork metal capacitance structure, comprise several odd-levels at least; Several even levels lay respectively between per two odd-levels, wherein each odd-level and each even level all comprise one first type electrode and one second type electrode at least, and this first type electrode and the second type electrode all comprise a first and several second portions that are parallel to each other at least, these second portions predeterminable range of being separated by is bonded on respectively on one side of first, and the second portion fork parallel to each other of these second portions of the first type electrode and the second type electrode closes, and the second portion of the first type electrode of each even level and the second type electrode is perpendicular to the first type electrode of each odd-level and the second portion of the second type electrode; Several interlayer holes lay respectively between the adjacent odd-level and even level, be used for electrically connecting respectively first type electrode of each odd-level and the first type electrode of each even level, and the second type electrode of the second type electrode of each odd-level and each even level; And several dielectric layers lay respectively between the first type electrode and the second type electrode of each odd-level, between the first type electrode of each even level and the second type electrode and between the adjacent odd-level and even level.
Because, the first type electrode of odd-level is vertical with the second portion that is parallel to each other of the second type electrode with the first type electrode of even level with the second portion that is parallel to each other of the second type electrode, therefore, not only have bigger process window, also can obtain than stable capacitance value.
Brief Description Of Drawings
Below in conjunction with accompanying drawing the specific embodiment of the present invention is described in further detail.
In the accompanying drawing,
Fig. 1 is the schematic top plan view of existing multilayer fork metal capacitance structure;
The generalized section that Fig. 2 is obtained for the I-I hatching of pitching the metal capacitance structure along the multilayer of Fig. 1;
Fig. 3 is the stereogram of the multilayer fork metal capacitance structure of a preferred embodiment of the present invention, wherein only to illustrate the wherein two-layer capacitance structure that this multilayer is pitched the metal capacitance structure in order clearly demonstrating, and not to illustrate the dielectric layer between two-layer capacitance structure;
Fig. 4 is the schematic top plan view of the multilayer fork metal capacitance structure odd-level of a preferred embodiment of the present invention;
Fig. 5 is the schematic top plan view of the multilayer fork metal capacitance structure even level of a preferred embodiment of the present invention; And
The generalized section that Fig. 6 is obtained for the II-II upper thread of pitching the metal capacitance structure along the multilayer of Fig. 3.
Embodiment
The present invention discloses a kind of multilayer fork metal capacitance structure, and the pectinate texture of the metal capacitance of its two adjacent layer is orthogonal, therefore can obtain bigger process window, and can reduce the variation of integral capacitor value.In order to make narration of the present invention more detailed and complete, can be with reference to the diagram of following description and cooperation Fig. 3 to Fig. 6.
Please refer to Fig. 3, Fig. 3 illustrates the stereogram of the multilayer fork metal capacitance structure of a preferred embodiment of the present invention, wherein only illustrate the wherein two-layer capacitance structure that this multilayer is pitched the metal capacitance structure, and do not illustrate the dielectric layer between two-layer capacitance structure in order to clearly demonstrate.And please together with reference to Fig. 4 and Fig. 5, wherein Fig. 4 illustrates the schematic top plan view of the multilayer fork metal capacitance structure odd-level of a preferred embodiment of the present invention, and Fig. 5 illustrates the schematic top plan view of the multilayer fork metal capacitance structure even level of a preferred embodiment of the present invention.In odd-level 216, comprise electrode 204 and electrode 212 at least.Wherein, electrode 204 comprises shank 200 and several pars pectinatas parallel to each other 202 at least.In addition, shank 200 is the L type, and is formed by engaging with the vertical and parallel two parts of pars pectinata 202 respectively.And these pars pectinatas 202 are engaged in the interval of a predeterminable range on one side of a wherein part of shank 200.Identical, electrode 212 comprises shank 208 and several pars pectinatas parallel to each other 210 at least.Wherein, shank 208 is the L type, and is formed by engaging with the vertical and parallel two parts of pars pectinata 210 respectively.And these pars pectinatas 210 also are on one side of the wherein part that is engaged in shank 208 of the interval with a predeterminable range.
In addition, the pars pectinata 202 of electrode 204 is pitched mutually with the pars pectinata of electrode 212 210 and is closed, and arranges and make pars pectinata 202 and pars pectinata 210 be staggered, as shown in Figure 4.And, therefore in Fig. 3 and Fig. 4, do not show the dielectric material of being filled between electrode 204 and the electrode 212 for of the structure and the arrangement of clear expression electrode 204 with electrode 212.Wherein, electrode 204, electrode 212 and the dielectric material between electrode 204 and electrode 212 fork that constitutes this odd-level 216 closes capacitance structure.
Same, in even level 218, comprise electrode 224 and electrode 230 at least.Wherein, electrode 224 comprises shank 220 and several pars pectinatas parallel to each other 222 that is the L type at least.Wherein, shank 220 is formed by engaging with the vertical and parallel two parts of pars pectinata 222 respectively.And these parallel pars pectinatas 222 are bonded on respectively on wherein a part of one side of shank 220 with the interval of a predeterminable range.Electrode 230 comprises shank 226 and several pars pectinatas parallel to each other 228 of L type at least.Wherein, the shank 220 of L type engages by two parts with the shank 226 of L type and forms.And these parallel pars pectinatas 228 are engaged in respectively on wherein a part of one side of shank 226 with the interval of a predeterminable range equally.
In addition, in even level 218, the pars pectinata 222 of electrode 224 is pitched each other with the pars pectinata 228 of electrode 230 and is closed, and makes pars pectinata 222 and pars pectinata 228 interlaced arrangements, as shown in Figure 5.In Fig. 3 and Fig. 5, do not show the dielectric material of being filled between electrode 224 and the electrode 230, be for of structure and the arrangement of clearer expression electrode 224 with electrode 230.Wherein, the fork of the formation of the dielectric material between electrode 224, electrode 230 and electrode 224 and the electrode 230 even level 218 closes capacitance structure.
In odd-level 216 and even level 218, electrode 204 is identical with the polarity of electrode 224, and electrode 212 is identical with the polarity of electrode 230, and the polarity of electrode 204 and electrode 224 is different with the polarity of electrode 212 and electrode 230.Just, when the polarity of electrode 204 and electrode 224 was positive pole, electrode 212 was a negative pole with the polarity of electrode 230; And when the polarity of electrode 204 and electrode 224 was negative pole, electrode 212 then was anodal with the polarity of electrode 230.
The storehouse mode of odd-level 216 and even level 218 makes the pars pectinata 210 of pars pectinata 202 and electrode 212 of electrode 204 of odd-level 216 perpendicular to the pars pectinata 222 of the electrode 224 of even level 218 and the pars pectinata 228 of electrode 230, as shown in Figure 3.Wherein, odd-level 216 and even level 218 utilizes the interlayer hole 206 that is arranged in odd-level 216 and the dielectric materials layer of 218 of even levels to carry out the electric connection of the same polarity electrode of odd-level 216 and even level 218 with interlayer hole 214.Interlayer hole 206 can engage in the electrode 204 of odd-level 216 in the electrode 224 with vertical shank 200 of pars pectinata 202 and even level 218 shank 220 parallel with pars pectinata 222; And interlayer hole 214 can engage in the electrode 212 of odd-level 216 in the electrode 230 with vertical shank 208 of pars pectinata 210 and even level 218 shank 226 parallel with pars pectinata 228, as shown in Figure 3.Yet interlayer hole 206 also can engage in the electrode 204 of odd-level 216 in the electrode 224 of shank 200 parallel with pars pectinata 202 and even level 218 shank 220 vertical with pars pectinata 222; And interlayer hole 214 can engage in the electrode 212 of odd-level 216 in the electrode 230 of shank 208 parallel with pars pectinata 210 and even level 218 shank 226 vertical with pars pectinata 228, and the present invention is not limited to this.
That is to say that when one of interlayer hole 206 terminated in the electrode 204 of odd-level 216 shank 200 vertical with pars pectinata 202, the other end of interlayer hole 206 then was connected in the electrode 224 of even level 218 shank 220 parallel with pars pectinata 222; And when one of interlayer hole 206 terminated in the electrode 204 of odd-level 216 shank 200 parallel with pars pectinata 202, the other end of interlayer hole 206 then was connected in the electrode 224 of even level 218 shank 220 vertical with pars pectinata 222.Same, when one of interlayer hole 214 terminated in the electrode 212 of odd-level 216 shank 208 vertical with pars pectinata 210, the other end of interlayer hole 214 then was connected in the electrode 230 of even level 218 shank 226 parallel with pars pectinata 228; And when one of interlayer hole 214 terminated in the electrode 212 of odd-level 216 shank 208 parallel with pars pectinata 210, the other end of interlayer hole 214 then was connected in the electrode 230 of even level 218 shank 226 vertical with pars pectinata 228.
Please refer to Fig. 6, Fig. 6 illustrates the generalized section that is obtained along the II-II hatching of the multilayer fork metal capacitance structure of Fig. 3.The pars pectinata 202 of the electrode 204 of odd-level 216 is staggered with the pars pectinata 210 of electrode 212, the cross-section structure of even level 218 then determines according to the position at hatching place, can be the part of electrode 230, a part or the dielectric materials layer between electrode 230 and electrode 224 of electrode 224.For instance, the II-II hatching in Fig. 3 be positioned at even level 218 electrode 230 directly over, so the cross-section structure of the even level that is obtained under this II-II hatching is one of them and the part of shank 226 of the pars pectinata 228 of electrode 230.
A feature of the present invention is exactly that the odd-level of multilayer of the present invention fork metal capacitance structure is orthogonal with the comb section of the electrode of even level, therefore with existing multilayer fork metal capacitance structure by contrast, have bigger process window, and be easier to making.
More noticeablely be, in the above-described embodiment, the direction of the fork composite electrode of odd-level and even level is not absolute, can adjust the direction of the fork composite electrode of odd-level and even level according to process requirements together, it is just passable only need to make the pars pectinata of the fork composite electrode of odd-level and even level be vertical stack, the above is explanation as an example only, is not to be used for limiting the present invention.
Comprehensive the above, an advantage of the present invention is exactly because the pectinate texture of the electrode of wantonly two adjacent layers of multilayer of the present invention fork metal capacitance structure is orthogonal, therefore have wider process window, and technology is simply easy to implement.
Another advantage of the present invention is exactly because in the multilayer of the present invention fork metal capacitance structure, the electrode pectinate texture of two adjacent layers is orthogonal up and down.Therefore can effectively improve the alignment error problem, reach the purpose of the capacitance variation that improvement caused because of the upper/lower electrode alignment error.
Be understandable that; for the person of ordinary skill of the art; can make other various corresponding changes and distortion according to technical scheme of the present invention and technical conceive, and all these changes and distortion all should belong to the protection range of the appended claim of the present invention.

Claims (10)

1, a kind of multilayer fork metal capacitance structure comprises at least:
Several odd-levels;
Several even levels lay respectively between per two odd-levels, wherein each odd-level and each even level all comprise one first type electrode and one second type electrode at least, and this first type electrode and this second type electrode comprise at least that all a first and several parallel second portions predeterminable range of being separated by is bonded on respectively on one side of this first, and these second portions fork parallel to each other of these second portions of this first type electrode and this second type electrode closes, and these second portions of this first type electrode of each even level and this second type electrode are perpendicular to this first type electrode of each odd-level and these second portions of this second type electrode;
Several interlayer holes lay respectively between adjacent these odd-levels and these even levels, be used for electrically connecting respectively this first type electrode of each odd-level and this first type electrode of each even level, and this second type electrode of this second type electrode of each odd-level and each even level; And
Several dielectric layers lay respectively between this first type electrode and this second type electrode of each odd-level, between this first type electrode of each even level and this second type electrode and between adjacent these odd-levels and these even levels.
2, multilayer fork metal capacitance structure according to claim 1, wherein this first of this first type electrode of this first of this of each odd-level first type electrode and this second type electrode and each even level and this second type electrode all has one first structure and one second structure, and this first structure is the L type with this second structure and engages.
3, multilayer according to claim 2 fork metal capacitance structure, wherein these interlayer holes are positioned at this first structure of this first of this first type electrode of each odd-level, and on this first structure of this first of this second type electrode.
4, multilayer according to claim 3 fork metal capacitance structure, wherein these interlayer holes engage this second structure of this first of this first type electrode of each even level, and this second structure of this first of this second type electrode.
5, multilayer according to claim 2 fork metal capacitance structure, wherein these interlayer holes are positioned at this first structure of this first of this first type electrode of each odd-level, and this second structure of this first of this second type electrode.
6, multilayer according to claim 5 fork metal capacitance structure, wherein these interlayer holes engage this second structure of this first of this first type electrode of each even level, and this first structure of this first of this second type electrode.
7, multilayer according to claim 2 fork metal capacitance structure, wherein these interlayer holes are positioned at this second structure of this first of this first type electrode of each odd-level, and on this first structure of this first of this second type electrode.
8, multilayer according to claim 7 fork metal capacitance structure, wherein these interlayer holes engage this first structure of this first of this first type electrode of each even level, and this second structure of this first of this second type electrode.
9, multilayer fork metal capacitance structure according to claim 2, wherein these interlayer holes are positioned at this second structure of this first of this first type electrode of each odd-level, and on this second structure of this first of this second type electrode, and these interlayer holes engage this first structure of this first of this first type electrode of each even level, and this first structure of this first of this second type electrode.
10, multilayer fork metal capacitance structure according to claim 1, wherein in each odd-level and each even level, when this first type electrode was positive pole, this second type electrode was a negative pole; And work as this first type electrode is negative pole, and then this second type electrode is anodal.
CNB031202438A 2003-03-04 2003-03-04 Multilayer composite metal capacitor structure Expired - Lifetime CN100359692C (en)

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CN101325127B (en) * 2007-06-14 2011-08-17 太阳诱电株式会社 Capacitor and manufacturing method thereof
CN102386914A (en) * 2011-09-30 2012-03-21 杭州电子科技大学 Digital controllable annular voltage-controlled oscillator circuit
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CN104282594A (en) * 2014-10-20 2015-01-14 武汉新芯集成电路制造有限公司 Test structure for monitoring performance of dielectric layers
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CN110858580A (en) * 2018-08-22 2020-03-03 无锡华润上华科技有限公司 Dielectric capacitor
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CN103578761A (en) * 2012-07-24 2014-02-12 鸿富锦精密工业(深圳)有限公司 Capacitor and multi-layer circuit board with same
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