CN1527105A - 电致发光显示装置 - Google Patents

电致发光显示装置 Download PDF

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CN1527105A
CN1527105A CNA2004100061478A CN200410006147A CN1527105A CN 1527105 A CN1527105 A CN 1527105A CN A2004100061478 A CNA2004100061478 A CN A2004100061478A CN 200410006147 A CN200410006147 A CN 200410006147A CN 1527105 A CN1527105 A CN 1527105A
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米田清
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Sanyo Electric Co Ltd
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    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
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    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
    • H—ELECTRICITY
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    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
    • H01L2029/7863—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile with an LDD consisting of more than one lightly doped zone or having a non-homogeneous dopant distribution, e.g. graded LDD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs

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Abstract

本发明提供一种电致发光显示装置，解决有机电场组件的微弱发光而成为亮度显示的问题。在形成于玻璃基板等透明绝缘性基板(100)上的多晶硅层所成主动层(101)上，形成栅极绝缘层(102)，另形成在栅极绝缘层(102)上延伸的栅极(13g)于主动层(101)形成低浓度掺杂漏极构造(LDD)的源极·漏极。源极(13s)是由相互邻接而触接的P－层及P+层所构成该P+层是掺杂浓度1×1020/cc程度的高浓度层。P－层是由P+层向栅极(13g)方向延伸的掺杂浓度1×1018/cc程度的低浓度层，而且以相互邻接的P－层及P+层构成漏极(13d)。

Description

电致发光显示装置
技术领域
本发明涉及电致发光显示装置，尤其涉及各像素具有：像素选择用晶体管、及用于电流驱动电致发光组件的驱动用晶体管的电致发光显示装置。
背景技术
近几年来，使用有机电致发光(Oganic Electro Luminescence：下称“有机EL”)组件的有机EL(电致发光)显示装置，作为替代CRT(阴极射线管)及LCD(液晶显示器)的显示装置而受人注目。尤其是已开发出具有作为驱动有机EL组件的开关(switching)组件的薄膜晶体管(TFT)(Thin Film Transistor，以下简称“TFT”)，开发出有机EL显示装置。
图4表示有机EL显示面板内的一像素的等效电路图。唯于有机EL显示面板的中，是将该像素多个配置成n列m行的矩阵，供应栅极信号Gn的栅极信号线10，与供应显示信号Dm的漏极信号线11相互交叉。
再在该两信号线交叉点附近，配置有机EL组件12及驱动该有机EL组件12的驱动用薄膜晶体管(TFT)13，及用于选择像素的像素选择用薄膜晶体管(TFT)14。
在驱动用薄膜晶体管(TFT)13的源极13s，是由电源线15而供应正电源电压PVdd。将该漏极13d连接在有机EL组件12的阳极，且在有机EL组件12的阴极，供应负电源电压CV。
对像素选择用薄膜晶体管(TFT)14的栅极，是由连接于该栅极的栅极信号线10而供应栅极信号Gn，且于该漏极14d连接漏极信号线11，而供应显示信号Dm。像素选择用薄膜晶体管(TFT)14的源极14s是连接于驱动用薄膜晶体管(TFT)13的栅极13g。此时，该栅极信号Gn是由未附图的垂直驱动电路输出。显示信号Dm即由未附图的水平驱动电路输出。
再在驱动用薄膜晶体管(TFT)13的栅极13g，连接保持电容器Cs。由该保持电容器Cs保持对应于显示信号Dm的电荷，为保持1图场(field)期间的显示像素的显示信号而设。
下面说明上述构成的EL显示装置的动作，当栅极信号Gn于一水平期间为“高”电平时、像素选择用薄膜晶体管(TFT)14即导通。由此，显示信号Dm从漏极信号线11经由像素选择用薄膜晶体管(TFT)14施加于驱动用薄膜晶体管(TFT)13的栅极13g。
然后，对应于供应至栅极13g的显示信号Dm，驱动用薄膜晶体管(TFT)13的电导(conductance)变化，而将对应于此的驱动电流经由驱动用薄膜晶体管(TFT)13供于有机EL组件12，使有机EL组件12燃亮。对应供应至该栅极13g的显示信号Dm，在驱动用薄膜晶体管(TFT)13为断开状态时，因驱动用薄膜晶体管(TFT)13中没有电流流动，而有机EL组件12熄灭。
现在，像素选择用薄膜晶体管(TFT)14，以N沟道型构成，且将驱动用薄膜晶体管(TFT)13则以P沟道型构成。
该相关的现有技术文献，例如有以下的专利文献1。
专利文献
特开2002-175029号公报。
现有就像素选择用薄膜晶体管(TFT)14，为防止由断开(off)时所流动的泄漏电流而使栅极13g电位变动，为减低相关泄漏电流，多采用LDD低浓度掺杂漏极(Lightly Doped Drain)构造。关于驱动用薄膜晶体管(TFT)13，则通常是采用高浓度的源·漏极构造。
因此，即使驱动用薄膜晶体管(TFT)13是由该栅极电压而设定为断开状态，仍有由电源线15仅有的微小驱动电流(泄漏电流)流通，使有机EL组件12发出微弱光线，而造成微亮度显示的问题。该泄漏电流是产生于栅极13g与漏极13d间，或栅极13g与源极13s间。
发明内容
本发明鉴于上述问题作出发明，提供一种EL显示装置，此装置具备多个像素，且在各像素中，具有：对应于栅极信号选择各像素的像素选择用晶体管；电致发光组件，及对应于经由上述像素选择用晶体管供应的显示信号驱动上述电致发光组件的驱动用晶体管，且将上述驱动用晶体管以LDD构造形成。
根据本发明的有机EL装置，将驱动设于各像素内的有机EL组件的驱动用晶体管以LDD构造形成，因而，该驱动用晶体管为断开状态时的泄漏电流减少，因此，能够解决有机EL组件的微弱发光、微亮度显示的问题。
附图说明
图1为有关本发明实施方式的电致发光显示装置的图案布局图。
图2表示驱动用TFT构造的剖面图。
图3表示驱动用TFT构造的剖面图。
图4为现有例的电致发光显示装置的等效电路图。
符号说明：10栅极信号线；11漏极信号线；12有机EL组件；13驱动用TFT；13g栅极；13s源极；13d漏极；14像素选择用薄膜晶体管(TFT)；14g栅极；14s源极；14d漏极；15电源线；20主动层；21，22栅极；21b栅极；22接触点；23保持电容线；24铝配线；25接触孔；26接触孔；30阳极；31电穴输送层；32发光层；33电子输送层；34阴极；100绝缘基板；101主动层；102栅极绝缘层；103层间绝缘层；104平坦化绝缘膜。
具体实施方式
将有关本发明实施方式的有机EL显示装置，参照该附图等详细说明如下：图1为表示该有机EL显示装置的一像素图案布局例的图(平面图)。图2及图3为图1中沿X-X线的剖面图。该有机EL装置的等效电路是与图4一样。
供给栅极信号Gn的栅极信号线10向行方向延伸，而供给显示信号Dm的漏极信号线11向列方向延伸。这些信号线相互形成立体交叉。栅极信号线10是由铬层或钼层等形成，而漏极信号线11由其上层的铝层等所成。
像素选择用薄膜晶体管(TFT)14为N沟道型多晶硅TFT。该像素选择用薄膜晶体管(TFT)14构造为：在玻璃基板等透明绝缘性基板100上形成的多晶硅层构成的主动层20上形成栅极绝缘层，而于该栅极绝缘层上，形成由栅极信号线10延伸的两栅极电极21、21，由此构成双栅极构造。
而该像素选择用薄膜晶体管(TFT)14的漏极14d，是经由接触点22与漏极信号线11连接。构成像素选择用薄膜晶体管(TFT)14的源极14s的多晶硅层，即延伸于保持电容区域，而该上层的保持电容线23，通过电容绝缘膜而重迭，且在该重迭部分形成保持电容量Cs。
然后，由像素选择用薄膜晶体管(TFT)14的源极14s延伸的多晶硅层，经由铝配线24连接于驱动用TFT13的栅极13g。
驱动用TFT13为P沟道型多晶硅TFT，具有LDD构造。关于该驱动用TFT13的构造，参照第2及图3细说明。首先，说明图2所示的驱动用TFT13的构造。
在玻璃基板等的透明的绝缘性基板100上形成的由多晶硅层构成的主动层101上，形成栅极绝缘层102。栅极绝缘层102是在主动层101上形成氧化硅膜(SiO2)及氮化硅膜(SiNx)依序层积而成。例如，该氧化硅膜的膜厚为80nm，而氮化硅膜的膜厚是40nm。
在该栅极绝缘层102上延伸有由铬或钼层等所形成的栅极13g。于该栅极13g上，形成层间绝缘层103，再在层间绝缘层103上，形成平坦化绝缘膜104。
在此，在主动层101形成LDD构造的源极及漏极，即，源极13s是由相互接触的邻接P-层及P+层构成。其中，P+层为例如硼掺杂浓度1×1020/cc程度的高浓度层，该P+层经由形成于其上的接触孔25连接在供给正电源PVdd的电源线15。如上所述，P+层是形成于触接区域。
另一方面，P-层是由P+层向栅极13g方向延伸，硼掺杂浓度为1×1018/cc程度的低浓度层，P-层形成在对栅极13g边缘而言离开栅极13g边缘的位置(仅离开图中的偏移长度OF)。而该偏移区域即为不掺杂区域。由此，得以将栅极13g与源极13s间的泄漏电流更为减低。
又因漏极13d也是由相接触的邻接P-层及P+层所构成。该P+层为例如硼掺杂浓度1×1020/cc程度的高浓度层，该P+层是经由形成于其上的接触孔26，连接在有机EL组件12的阳极30。如上所述，P+层是形成于触接区域。
另一方面，P-层是由P+层向栅极13g方向延伸，其硼掺杂浓度为1×1018/cc程度的低浓度层。P-层是与源极13s一样，形成于离开栅极13g边缘的位置(仅离开图中的偏移长度OF)。该偏移区域也为不掺杂区域。由此，可使栅极13g与源极13s间的泄漏电流更为减低。
于有机EL组件12的阳极30上，层积电穴输送层31、发光层32及电子输送层33，再在其上面形成阴极34。
如上所述，图2中的驱动用TFT13，是具有偏移区域的LDD构造。相对与此，图3中所示的驱动用TFT13，不具有偏移区域。在该驱动用TFT13的构造中，P-层可由离子植入而对栅极13g的边缘形成自动对准地形成。

Claims (3)

1.一种电致发光显示装置，是具有多个像素，而各该像素是具备：对应于栅极信号选择各像素的像素选择用晶体管；电致发光组件，及对应于经由上述像素选择用晶体管供应的显示信号，而驱动上述电致发光组件的驱动用晶体管，而且，上述驱动用晶体管为P沟道型，其特征在于，同时以LDD构造形成。
2.根据权利要求1所述的电致发光显示装置，其特征在于，在上述驱动用晶体管的主动层设置偏移区域。
3.根据权利要求1或2所述的电致发光显示装置，其特征在于，上述驱动用晶体管含有：掺有1×1020/cc以上的P型掺杂物，以形成电极的高浓度区域，及掺有1×1018/cc以下的P型掺杂物，且配置于上述高浓度区域与沟道区域间的低浓度区域。
CNB2004100061478A 2003-03-03 2004-03-02 电致发光显示装置 Expired - Fee Related CN1270204C (zh)

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CN1270204C (zh) 2006-08-16
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