CN1509501A - 两种存储器类型的集成 - Google Patents
两种存储器类型的集成 Download PDFInfo
- Publication number
- CN1509501A CN1509501A CNA028101995A CN02810199A CN1509501A CN 1509501 A CN1509501 A CN 1509501A CN A028101995 A CNA028101995 A CN A028101995A CN 02810199 A CN02810199 A CN 02810199A CN 1509501 A CN1509501 A CN 1509501A
- Authority
- CN
- China
- Prior art keywords
- dielectric layer
- dielectric
- semiconductor substrate
- semiconductor device
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000015654 memory Effects 0.000 title claims abstract description 37
- 230000010354 integration Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 claims abstract description 33
- 239000002159 nanocrystal Substances 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 238000000034 method Methods 0.000 claims abstract description 12
- 229920002120 photoresistant polymer Polymers 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 2
- 229910052731 fluorine Inorganic materials 0.000 claims description 2
- 239000011737 fluorine Substances 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical group [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 1
- 239000003989 dielectric material Substances 0.000 abstract 3
- 239000000463 material Substances 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 9
- 238000005530 etching Methods 0.000 description 7
- 230000008901 benefit Effects 0.000 description 6
- 239000004020 conductor Substances 0.000 description 6
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 210000004027 cell Anatomy 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 210000000352 storage cell Anatomy 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
- G11C2216/02—Structural aspects of erasable programmable read-only memories
- G11C2216/06—Floating gate cells in which the floating gate consists of multiple isolated silicon islands, e.g. nanocrystals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/981—Utilizing varying dielectric thickness
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Manufacturing & Machinery (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/881,332 US6531731B2 (en) | 2001-06-15 | 2001-06-15 | Integration of two memory types on the same integrated circuit |
US09/881,332 | 2001-06-15 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1509501A true CN1509501A (zh) | 2004-06-30 |
CN100362663C CN100362663C (zh) | 2008-01-16 |
Family
ID=25378257
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB028101995A Expired - Fee Related CN100362663C (zh) | 2001-06-15 | 2002-05-07 | 相同集成电路上两种存储器类型的集成 |
Country Status (8)
Country | Link |
---|---|
US (2) | US6531731B2 (zh) |
EP (1) | EP1402577A2 (zh) |
JP (1) | JP2005520318A (zh) |
KR (1) | KR20040007728A (zh) |
CN (1) | CN100362663C (zh) |
AU (1) | AU2002259157A1 (zh) |
TW (1) | TW541664B (zh) |
WO (1) | WO2002103800A2 (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100355060C (zh) * | 2004-10-28 | 2007-12-12 | 茂德科技股份有限公司 | 非挥发性存储器的制造方法 |
CN101410939B (zh) * | 2006-03-31 | 2011-04-06 | 飞思卡尔半导体公司 | 分离半导体器件中的结构的方法 |
CN102509732A (zh) * | 2011-12-29 | 2012-06-20 | 中国科学院上海微系统与信息技术研究所 | 微控制器用低功耗嵌入式相变存储器及其相变存储材料与制备方法 |
CN107484434A (zh) * | 2015-03-27 | 2017-12-15 | 株式会社佛罗迪亚 | 非易失性sram存储器单元及非易失性半导体存储装置 |
Families Citing this family (41)
Publication number | Priority date | Publication date | Assignee | Title |
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JP4257055B2 (ja) * | 2001-11-15 | 2009-04-22 | 株式会社ルネサステクノロジ | 半導体集積回路装置の製造方法 |
US7005697B2 (en) | 2002-06-21 | 2006-02-28 | Micron Technology, Inc. | Method of forming a non-volatile electron storage memory and the resulting device |
JP2004152924A (ja) * | 2002-10-30 | 2004-05-27 | Renesas Technology Corp | 半導体記憶素子および半導体装置 |
US6900097B2 (en) * | 2003-05-12 | 2005-05-31 | United Microelectronics Corp. | Method for forming single-level electrically erasable and programmable read only memory operated in environment with high/low-voltage |
US7759719B2 (en) * | 2004-07-01 | 2010-07-20 | Chih-Hsin Wang | Electrically alterable memory cell |
US7613041B2 (en) * | 2003-06-06 | 2009-11-03 | Chih-Hsin Wang | Methods for operating semiconductor device and semiconductor memory device |
US7550800B2 (en) * | 2003-06-06 | 2009-06-23 | Chih-Hsin Wang | Method and apparatus transporting charges in semiconductor device and semiconductor memory device |
DE10326805B4 (de) * | 2003-06-13 | 2007-02-15 | Infineon Technologies Ag | Herstellungsverfahren für nichtflüchtige Speicherzellen |
DE10336876B4 (de) * | 2003-08-11 | 2006-08-24 | Infineon Technologies Ag | Speicherzelle mit Nanokristallen oder Nanodots und Verfahren zu deren Herstellung |
TWI276206B (en) * | 2003-11-25 | 2007-03-11 | Promos Technologies Inc | Method for fabricating flash memory device and structure thereof |
KR100526480B1 (ko) * | 2003-12-31 | 2005-11-08 | 동부아남반도체 주식회사 | 양자점을 이용한 비휘발성 메모리 제조 방법 |
US6964902B2 (en) * | 2004-02-26 | 2005-11-15 | Freescale Semiconductor, Inc. | Method for removing nanoclusters from selected regions |
JP4942950B2 (ja) * | 2004-05-28 | 2012-05-30 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US7504663B2 (en) * | 2004-05-28 | 2009-03-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with a floating gate electrode that includes a plurality of particles |
US20080203464A1 (en) * | 2004-07-01 | 2008-08-28 | Chih-Hsin Wang | Electrically alterable non-volatile memory and array |
US7160775B2 (en) * | 2004-08-06 | 2007-01-09 | Freescale Semiconductor, Inc. | Method of discharging a semiconductor device |
US7158410B2 (en) * | 2004-08-27 | 2007-01-02 | Micron Technology, Inc. | Integrated DRAM-NVRAM multi-level memory |
US20060054963A1 (en) * | 2004-09-10 | 2006-03-16 | Qian Rong A | Non-volatile and non-uniform trapped-charge memory cell structure and method of fabrication |
US7183180B2 (en) * | 2004-10-13 | 2007-02-27 | Atmel Corporation | Method for simultaneous fabrication of a nanocrystal and non-nanocrystal device |
KR20060095819A (ko) * | 2005-02-28 | 2006-09-04 | 삼성전자주식회사 | 금속 질화물을 트랩 사이트로 이용한 메모리 소자를 그 제조 방법 |
US7173304B2 (en) * | 2005-06-06 | 2007-02-06 | Micron Technology, Inc. | Method of manufacturing devices comprising conductive nano-dots, and devices comprising same |
US7411244B2 (en) | 2005-06-28 | 2008-08-12 | Chih-Hsin Wang | Low power electrically alterable nonvolatile memory cells and arrays |
US7364969B2 (en) * | 2005-07-01 | 2008-04-29 | Freescale Semiconductor, Inc. | Semiconductor fabrication process for integrating formation of embedded nonvolatile storage device with formation of multiple transistor device types |
US20070085130A1 (en) * | 2005-10-19 | 2007-04-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Tungsten-containing nanocrystal, an array thereof, a memory comprising such an array, and methods of making and operating the foregoing |
US20070120186A1 (en) * | 2005-11-29 | 2007-05-31 | Synopsys, Inc. | Engineered barrier layer and gate gap for transistors with negative differential resistance |
KR100690925B1 (ko) * | 2005-12-01 | 2007-03-09 | 삼성전자주식회사 | 나노 크리스탈 비휘발성 반도체 집적 회로 장치 및 그 제조방법 |
US7341914B2 (en) * | 2006-03-15 | 2008-03-11 | Freescale Semiconductor, Inc. | Method for forming a non-volatile memory and a peripheral device on a semiconductor substrate |
KR100735534B1 (ko) * | 2006-04-04 | 2007-07-04 | 삼성전자주식회사 | 나노 크리스탈 비휘발성 반도체 집적 회로 장치 및 그 제조방법 |
US8927370B2 (en) * | 2006-07-24 | 2015-01-06 | Macronix International Co., Ltd. | Method for fabricating memory |
US20080121967A1 (en) * | 2006-09-08 | 2008-05-29 | Ramachandran Muralidhar | Nanocrystal non-volatile memory cell and method therefor |
US7517747B2 (en) * | 2006-09-08 | 2009-04-14 | Freescale Semiconductor, Inc. | Nanocrystal non-volatile memory cell and method therefor |
US7846793B2 (en) * | 2007-10-03 | 2010-12-07 | Applied Materials, Inc. | Plasma surface treatment for SI and metal nanocrystal nucleation |
US8072023B1 (en) | 2007-11-12 | 2011-12-06 | Marvell International Ltd. | Isolation for non-volatile memory cell array |
US8120088B1 (en) | 2007-12-07 | 2012-02-21 | Marvell International Ltd. | Non-volatile memory cell and array |
US8679912B2 (en) * | 2012-01-31 | 2014-03-25 | Freescale Semiconductor, Inc. | Semiconductor device having different non-volatile memories having nanocrystals of differing densities and method therefor |
WO2013180780A2 (en) * | 2012-03-08 | 2013-12-05 | D-Wave Systems Inc. | Systems and methods for fabrication of superconducting integrated circuits |
US9159406B2 (en) | 2012-11-02 | 2015-10-13 | Sandisk Technologies Inc. | Single-level cell endurance improvement with pre-defined blocks |
US8896067B2 (en) | 2013-01-08 | 2014-11-25 | International Business Machines Corporation | Method of forming finFET of variable channel width |
US9929007B2 (en) * | 2014-12-26 | 2018-03-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | e-Flash Si dot nitrogen passivation for trap reduction |
EP4142457A1 (en) | 2017-02-01 | 2023-03-01 | D-Wave Systems Inc. | Systems and methods for fabrication of superconducting integrated circuits |
US20200152851A1 (en) | 2018-11-13 | 2020-05-14 | D-Wave Systems Inc. | Systems and methods for fabricating superconducting integrated circuits |
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DE2927599A1 (de) * | 1979-07-07 | 1981-01-15 | Itt Ind Gmbh Deutsche | Integrierbarer isolierschicht-feldeffekttransistor |
US5330920A (en) * | 1993-06-15 | 1994-07-19 | Digital Equipment Corporation | Method of controlling gate oxide thickness in the fabrication of semiconductor devices |
US5793081A (en) * | 1994-03-25 | 1998-08-11 | Nippon Steel Corporation | Nonvolatile semiconductor storage device and method of manufacturing |
KR0136935B1 (ko) * | 1994-04-21 | 1998-04-24 | 문정환 | 메모리 소자의 제조방법 |
JP3238576B2 (ja) * | 1994-08-19 | 2001-12-17 | 株式会社東芝 | 不揮発性半導体記憶装置 |
US5894146A (en) * | 1995-02-28 | 1999-04-13 | Sgs-Thomson Microelectronics, S.R.L. | EEPROM memory cells matrix with double polysilicon level and relating manufacturing process |
DE19531629C1 (de) * | 1995-08-28 | 1997-01-09 | Siemens Ag | Verfahren zur Herstellung einer EEPROM-Halbleiterstruktur |
US5714766A (en) * | 1995-09-29 | 1998-02-03 | International Business Machines Corporation | Nano-structure memory device |
JPH1092957A (ja) * | 1996-09-19 | 1998-04-10 | Toshiba Corp | 半導体装置の製造方法 |
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US6060743A (en) * | 1997-05-21 | 2000-05-09 | Kabushiki Kaisha Toshiba | Semiconductor memory device having multilayer group IV nanocrystal quantum dot floating gate and method of manufacturing the same |
US6146948A (en) * | 1997-06-03 | 2000-11-14 | Motorola Inc. | Method for manufacturing a thin oxide for use in semiconductor integrated circuits |
JP3586072B2 (ja) * | 1997-07-10 | 2004-11-10 | 株式会社東芝 | 不揮発性半導体記憶装置 |
JP3495889B2 (ja) * | 1997-10-03 | 2004-02-09 | シャープ株式会社 | 半導体記憶素子 |
US6232643B1 (en) * | 1997-11-13 | 2001-05-15 | Micron Technology, Inc. | Memory using insulator traps |
US6083791A (en) * | 1997-12-15 | 2000-07-04 | National Semiconductor Corporation | Self-aligned stacked gate etch process for fabricating a two-transistor EEPROM cell |
GB2337158B (en) * | 1998-02-07 | 2003-04-02 | United Semiconductor Corp | Method of fabricating dual voltage mos transistors |
JP2000269361A (ja) * | 1999-03-15 | 2000-09-29 | Nec Corp | 不揮発性半導体記憶装置およびその製造方法 |
US6235586B1 (en) * | 1999-07-13 | 2001-05-22 | Advanced Micro Devices, Inc. | Thin floating gate and conductive select gate in situ doped amorphous silicon material for NAND type flash memory device applications |
KR100350055B1 (ko) * | 1999-12-24 | 2002-08-24 | 삼성전자 주식회사 | 다중 게이트 절연막을 갖는 반도체소자 및 그 제조방법 |
JP2001237324A (ja) * | 2000-02-22 | 2001-08-31 | Nec Corp | 半導体装置の製造方法 |
US6320784B1 (en) * | 2000-03-14 | 2001-11-20 | Motorola, Inc. | Memory cell and method for programming thereof |
US6413819B1 (en) * | 2000-06-16 | 2002-07-02 | Motorola, Inc. | Memory device and method for using prefabricated isolated storage elements |
-
2001
- 2001-06-15 US US09/881,332 patent/US6531731B2/en not_active Expired - Lifetime
-
2002
- 2002-05-07 EP EP02729146A patent/EP1402577A2/en not_active Withdrawn
- 2002-05-07 CN CNB028101995A patent/CN100362663C/zh not_active Expired - Fee Related
- 2002-05-07 AU AU2002259157A patent/AU2002259157A1/en not_active Abandoned
- 2002-05-07 KR KR10-2003-7016432A patent/KR20040007728A/ko active Search and Examination
- 2002-05-07 JP JP2003506010A patent/JP2005520318A/ja active Pending
- 2002-05-07 WO PCT/US2002/014440 patent/WO2002103800A2/en active Application Filing
- 2002-05-24 TW TW091111066A patent/TW541664B/zh not_active IP Right Cessation
-
2003
- 2003-01-21 US US10/348,267 patent/US6790727B2/en not_active Expired - Lifetime
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100355060C (zh) * | 2004-10-28 | 2007-12-12 | 茂德科技股份有限公司 | 非挥发性存储器的制造方法 |
CN101410939B (zh) * | 2006-03-31 | 2011-04-06 | 飞思卡尔半导体公司 | 分离半导体器件中的结构的方法 |
CN102509732A (zh) * | 2011-12-29 | 2012-06-20 | 中国科学院上海微系统与信息技术研究所 | 微控制器用低功耗嵌入式相变存储器及其相变存储材料与制备方法 |
CN102509732B (zh) * | 2011-12-29 | 2014-06-25 | 中国科学院上海微系统与信息技术研究所 | 微控制器用低功耗嵌入式相变存储器及其相变存储材料与制备方法 |
CN107484434A (zh) * | 2015-03-27 | 2017-12-15 | 株式会社佛罗迪亚 | 非易失性sram存储器单元及非易失性半导体存储装置 |
CN107484434B (zh) * | 2015-03-27 | 2019-04-12 | 株式会社佛罗迪亚 | 非易失性sram存储器单元及非易失性半导体存储装置 |
Also Published As
Publication number | Publication date |
---|---|
US20030132500A1 (en) | 2003-07-17 |
WO2002103800A2 (en) | 2002-12-27 |
WO2002103800A3 (en) | 2003-06-05 |
CN100362663C (zh) | 2008-01-16 |
US6790727B2 (en) | 2004-09-14 |
TW541664B (en) | 2003-07-11 |
KR20040007728A (ko) | 2004-01-24 |
EP1402577A2 (en) | 2004-03-31 |
AU2002259157A1 (en) | 2003-01-02 |
JP2005520318A (ja) | 2005-07-07 |
US20020190343A1 (en) | 2002-12-19 |
US6531731B2 (en) | 2003-03-11 |
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