CN1501435A - Gas injection apparatus for semiconductor processing system - Google Patents

Gas injection apparatus for semiconductor processing system Download PDF

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Publication number
CN1501435A
CN1501435A CNA031390919A CN03139091A CN1501435A CN 1501435 A CN1501435 A CN 1501435A CN A031390919 A CNA031390919 A CN A031390919A CN 03139091 A CN03139091 A CN 03139091A CN 1501435 A CN1501435 A CN 1501435A
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Prior art keywords
gas
reaction chamber
gas passage
injection member
air inlet
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CNA031390919A
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CN100336165C (en
Inventor
̩
金泰完
N���ж����з�
尤里·N·托尔马切夫
Y
马东俊
瑟吉·Y·纳瓦拉
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/4558—Perforated rings
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

A gas injection apparatus for injecting a reactive gas into a reaction chamber of a semiconductor processing system includes an injector in contact with an inner surface of a wall of the reaction chamber. The injector has a plurality of nozzles through which the reactive gas is injected into the reaction chamber. A gas inlet penetrates the wall of the reaction chamber. A manifold is disposed between the wall of the reaction chamber and the injector, and supplies the reactive gas flowing through the gas inlet to the nozzles. Gas channels in the manifold are arranged on a plurality of levels to equalize the lengths of gas paths connecting the gas inlet to each of the plurality of nozzles. This configuration makes the flow rate of reactive gas supplied through each of the plurality of nozzles to the reaction chamber uniform.

Description

The gas injection device that is used for semiconductor processing system
Technical field
The present invention relates to a kind of semiconductor processing system, especially relate to a kind of being used for reacting gas is infeeded gas injection device in the reaction chamber, described reacting gas is used for semiconductor chip is handled.
Background technology
In recent years, in the micromachining technology that has been widely used on semiconductor chip, carrying out such as the semiconductor machining system of plasma process system or magnetron sputtering system, make semiconductor device or flat display board.For example, plasma-enhanced chemical gas deposition (PECVD) system or high-density plasma CVD (HDP-CVD) system have been widely used in depositing a material layer by chemical vapor deposition (CVD) on substrate.Magnetron sputtering system has been widely used in depositing a material layer by physical vapor deposition (PCD) on substrate.
The developing direction of semiconductor processing system is the various operational characteristiies that can be suitable for being used for semiconductor processes.Especially, along with the increase of substrate diameter, how the research on semiconductor processing system in recent years handles the output of large-sized substrate to obtain to improve if concentrating on.That is to say,, for processing of wafers technology, especially need to improve the uniformity on wafer along with wafer size is changed to 300 millimeters from 200 millimeters.For the uniformity that obtains to expect, the most important thing is when the gas injection device that is used for semiconductor processing system by infeeds reacting gas in the reaction chamber, to make this reacting gas be evenly distributed in the entire reaction chamber.
Therefore, in order to realize the even distribution of gas by gas injection device, worked out the gas injection device of number of different types up to now.As an example, U.S. Patent No. 5522931 has been described a kind of gas injection device, and it has a plurality of nozzles that are provided with a plurality of ranks perpendicular to the direction of substrate along.Compare with more low-level gas distributing nozzle, the extended distance at the gas distributing nozzle orientating reaction chamber middle part of higher level is longer.Perhaps, this gas injection device is realizing that gas is effectively aspect the distribution evenly, but because the existence of that part of nozzle that the orientating reaction chamber interior is extended flows to substrate so be easy to blocks ions stream.
As the another one example, U.S. Patent No. 6432831 has been described a kind of shower-head type gas injection device.In this gas injection device, gas is fed into a shower nozzle by dividing plate and perforation, so that provide uniform gas pressure to distribute at the whole rear side of shower nozzle.Another example of shower-head type gas injection device is open in U.S. Patent No. 6415736.In this gas injection device, the hole dimension on the dividing plate can change, and obtains uniform gas pressure in order to the rear side at shower nozzle and distributes.But, because the scope of gas pressure and flow is very wide, so be difficult to these systems are optimized.The another one shortcoming is that the shower-head type gas injection device only is suitable for the parallel plate type plasma reactor, and can't be applied to magnetron sputtering system.Also have, when being used for an electron cyclotron resonance formula (ECR) plasma reactor, the shower nozzle that is positioned at reaction chamber top can stop the propagation of microwave.For ecr plasma reactor and other practical application, use a kind of ring-type gas injection device usually, the example of this ring-type gas injection device is shown in Figure 1.
Ring-type gas injection device 10 shown in Figure 1 has a gas passage 14 that is formed at wherein, thereby make reacting gas can pass this gas passage 14, an air inlet 12 that is connected in its periphery on the gas passage 14, and a plurality of nozzle 16 that is positioned at its place in week.Described a plurality of nozzle 16 is evenly spaced apart along gas injection device 10 in interior week.
Gas injection device 10 is configured to define a gas passage, and this gas passage connects in air inlets 12 and a plurality of nozzle 16 each by gas passage 14.For each nozzle 16, all has each path of different length.Owing to after the wall of reacting gas and gas passage 14 bumps, can produce pressure drop, so the difference of gas passage can cause the reaction gas pressure at each nozzle place there are differences.This will make that the gas flow that passes each nozzle 16 is inhomogeneous.
Fig. 2 is a curve chart, shows the gas pressure and the flow at each nozzle place in gas injection device shown in Figure 1.In the figure, air inlet 12 is marked as digital " 0 ", and nozzle is labeled as numeral " 1 " to " 16 " successively with their orders that is provided with in week in the gas injection device.
Illustrating among Fig. 2 when gas pressure and flow being carried out result calculated during with the flow feed O2 gas of per minute 100 standard cubic centimeters (sccm) under the condition that at pressure in reaction chamber is 10mTorr.Gas passage has one 1 * 4 millimeter rectangular cross-section, and the diameter of each nozzle is 0.5 millimeter, and length is 2 millimeters.It is 241 millimeters ring-type that gas passage is made into a diameter.
As the figure from Fig. 2 find out, gas pressure descends along a direction that deviates from air inlet, that is to say along with the increase of gaseous path length to descend.Approximately be away from four times of the nozzle place gas flow of air inlet near the gas flow at the nozzle place of air inlet.By this way, because the length that connects the gas passage of air inlet and each nozzle by gas passage there are differences, so conventional ring-type gas injection device can make the gas pressure at each nozzle place and flow extremely inhomogeneous.
The design of gas injection device and structure can greatly influence in the processed on-chip uniformity.Be well known that along with the increase of gas injection device size and dwindling of gas channel cross-section area, it is big that the unevenness of distribution of gas can become.In order can blocks ions not flow and microwave propagation, desirable is to make gas injection device thin as much as possible.Although this structural requirement gas passage has the little area of section, still there is the uneven problem of pressure distribution in the big gas injection device that has thin gas passage.
Therefore, along with the trend that wafer size in recent years constantly increases, make and utilize conventional gas injection device more to be difficult to guarantee to reaction chamber distributing gas equably.This will damage the uniformity on whole processed semiconductor chip, correspondingly obviously the quality of degrade and output again.
Summary of the invention
The invention provides a kind of gas injection device that is used for semiconductor processing system, it has manifold, and this manifold is configured such that the equal in length of the gas passage that connects air inlet and each nozzle, so that to the reaction chamber reacting gas that distributes equably.
The present invention also provides a kind of gas injection device, and it goes for multiple semiconductor processing system, such as PECVD system, HDP-CVD system and magnetron sputtering system.
The present invention also provides a kind of gas injection device, and it goes for having the semiconductor processing system of big reaction chamber, and in order to no matter how size, gas pressure and the flow of reaction chamber change, even distribution that all can realization response gas.
According to an aspect of the present invention, provide a kind of gas injection device, be used for reacting gas is injected in the reaction chamber of semiconductor processing system at this.This gas injection device comprises: injection member, this injection member are configured to come in contact with the chamber wall inner surface of reaction chamber, and have a plurality of nozzles that pass it, and by these nozzles, reacting gas is injected in the reaction chamber; Air inlet, this air inlet run through the chamber wall of reaction chamber; And manifold, this manifold is arranged between the chamber wall and injection member of reaction chamber, and the reacting gas that is used for flowing into by air inlet is fed in each of described a plurality of nozzles.Described manifold is configured to have the gas passage that is arranged on a plurality of ranks, these gas passages are used for make connecting each the equal in length of gas passage of air inlet and a plurality of nozzles, make that thus to be fed to the gas flow of reaction chamber by in described a plurality of nozzles each even.
At this, other gas passage of level is divided into two arms at the place, arbitrary end of the gas passage of next higher level in a plurality of other gas passages of level, and each arm all has identical length.The gas passage of highest level is divided into two arms, and each arm all has identical length with the continuous part place of air inlet (outlet).In described a plurality of nozzle each all is connected on arbitrary end of other gas passage of lowermost level.On the wall inner surface of the chamber of reaction chamber, be formed with groove, and injection member is inserted in this groove.Described gas passage can be formed on the injection member surface that the chamber wall inner surface with reaction chamber comes in contact, and is the groove shape with desired depth.Selectively, described gas passage can be formed on the chamber wall inner surface of reaction chamber, is the groove shape with desired depth.In this case, injection member can be made by a kind of dielectric liner such as ceramic material (adielectric liner).
Along the circumference of injection member, the outlet of described nozzle is evenly spaced apart on the injection member surface relative with the inside of reaction chamber.
According to the first embodiment of the present invention, injection member is flat ring-type, and is configured to come in contact with the bottom of reaction chamber upper wall.Also have, described gas passage is with different rank settings.
According to a second embodiment of the present invention, it is cylindric that injection member is, and be configured to come in contact with the reaction chamber inside surface of side wall.
A third embodiment in accordance with the invention, injection member are coniform, and are configured to come in contact with the inclined inner surface of reaction chamber upper wall.
In the second and the 3rd embodiment, described gas passage on the periphery of injection member along the short transverse of this injection member with different rank settings, thereby make and watch that high-level gas passage is positioned at the position that is lower than the low level gas passage from air inlet.
Described gas injection device can also comprise a shower-head type injection member, and this shower-head type injection member is set at the place, top of reaction chamber, is used for reacting gas is fed to the middle part of reaction chamber.
Pass through previous constructions, the present invention can provide a kind of like this gas injection device, promptly regardless of size, gas pressure and the flow of reaction chamber, it all can be identical by each the length of gas passage that make to connect in air inlet and the described a plurality of nozzles, the height of realizing gas flow is even, and go for various semiconductor processing systems, comprise plasma process system and magnetron sputtering system.
Description of drawings
At length the preferred embodiments of the present invention are described by the reference accompanying drawing, aforementioned purpose of the present invention and advantage will become more clear, wherein:
Fig. 1 is a sectional perspective view that is used for the conventional ring-type gas injection device of semiconductor processing system;
Fig. 2 is a figure, shows the gas pressure and the flow at each nozzle place in gas injection device shown in Figure 1;
Fig. 3 A shows an essential structure that is used for the gas injection device of semiconductor processing system according to the present invention;
Fig. 3 B be gas injection device shown in Figure 2 along line A-A ' through amplifying sectional elevation;
Fig. 4 is a figure, show one according to gas injection device of the present invention in the gas pressure and the flow at each nozzle place; And
Fig. 5-the 9th, the gas injection device of first to the 5th embodiment and the sectional elevation that has adopted their plasma process system according to the present invention.
Embodiment
More all sidedly the gas injection device that is used for semiconductor processing system according to the preferred embodiment of the present invention is described below with reference to accompanying drawings.
With reference to Fig. 3 A and 3B, gas injection device according to the present invention comprises air inlet 110, reacting gas flows into from the outside by this air inlet 110, a plurality of nozzles 130, reacting gas is injected in the reaction chamber by these nozzles 130, and manifold 120, reacting gas is fed to from air inlet 110 in a plurality of nozzles 130 each by this manifold 120.Manifold 120 is constructed such that each the equal in length of gas passage that connects in air inlet 110 and a plurality of nozzle 130.For this reason, manifold 120 includes the gas passage 121-124 that is arranged on a plurality of ranks.
Air inlet 110 is made into to run through the chamber wall of reaction chamber, and a plurality of nozzle 130 is formed on the ring-type injection member 140, and the chamber wall inner surface that this ring-type injection member 140 is installed into reaction chamber comes in contact.Gas passage 121-124 on the manifold 120 is set between the chamber wall of injection member 140 and reaction chamber.Specifically, gas passage 121-124 can be formed on the surface of injection member 140, that is to say on the surface that the inner surface with reaction chamber chamber wall comes in contact, and is the groove shape with desired depth.As will be described later, gas passage 121-124 also can be formed on the inner surface of reaction chamber chamber wall, is the groove shape with desired depth.
In a plurality of nozzles 130 each all is made into to run through injection member 140 from the inside at two end orientating reaction chambers of other each gas passage 124 of lowermost level.That is to say that the inlet of each nozzle 130 all is connected to and is on other gas passage 124 of lowermost level, its inside that exports equal orientating reaction chamber is opened wide simultaneously.The outlet of described nozzle 130 on another surface of injection member 140, promptly with the inside facing surfaces of reaction chamber on, evenly spaced apart along circumference.
As previously mentioned, gas passage 121-124 is set on a plurality of ranks, preferably is set at as shown in Fig. 3 A on four ranks.Be divided into the arm of both direction with first gas passage 121 of the first rank setting from air inlet 110, each arm is all along the identical length of the circumferential extension of injection member 140, and wherein said first rank is a highest level.Be divided into the arm of both direction from arbitrary end of first gas passage 121 with second gas passage 122 of second level setting, each arm is all along the identical length of the circumferential extension of injection member 140.The 3rd gas passage 123 that is not provided with the third level is divided into the arm of both direction from arbitrary end of each second gas passage, each arm is all along the identical length of the circumferential extension of injection member 140.The 4th gas passage 124 that is not provided with the fourth stage forms in mode as hereinbefore, and the wherein said fourth stage is not minimum rank.Nozzle 130 is set at the place, end of each the 4th gas passage 124 as described above.If being used for the number of levels of gas passage 121-124 is 4 as described above, the number of nozzle 130 is 24 so, promptly 16.Therefore, if other number of level is n, the number of nozzle 130 is 2n just so.Being arranged on other gas passage of a plurality of level 121-124 makes and connects each the equal in length of gas passage in air inlets 110 and a plurality of nozzle 130.
Fig. 4 is a curve chart, show one according to gas injection device of the present invention in the gas pressure and the flow at each nozzle place.In the figure, air inlet is marked as " 0 ", the end of other gas passage of the first order is marked as " a1 " and " a2 ", and the end of the gas passage of second level is marked as " b1 " to " b4 ", and the end of other gas passage of the third level is marked as " c1 " to " c8 ".Described a plurality of nozzle is labeled as numeral " 1 " to " 16 " with them successively along the circumference of the injection member setting order on the injection member inboard.
In order to compare, among Fig. 4 illustrate with Fig. 2 in gas pressure and flow are carried out result calculated under the identical state, wherein O2 gas is to supply with the flow of per minute 100 standard cubic centimeters (sccm) under the condition of 10mTorr at pressure in reaction chamber.Each gas passage all has one 1 * 4 millimeter rectangular cross-section, and the diameter of each nozzle is 0.5 millimeter, and length is 2 millimeters.The diameter of first to fourth grade of other gas passage is set to 282 millimeters, 268 millimeters, 255 millimeters and 241 millimeters respectively.
As finding out, because can the generation pressure drop after the inwall of reacting gas and gas passage bumps, so gas pressure can be along the gas passage descended deviating from the direction of air inlet from figure shown in Fig. 4.But, because the identical length of the gas passage of arbitrary end of connection air inlet and other gas passage of each grade etc., so each gas passage all can experience equal pressure drop.Therefore, this will make the gas pressure at each place in described a plurality of nozzles equate.Also have, the gas flow that is infeeded in the reaction chamber by described a plurality of nozzles equates.When such as shown in Figure 4 gas flow by the air inlet feed is 100sccm, be 100/16sccm by each gas flow that injects in reaction chamber in 16 nozzles, i.e. 6.25sccm.
Aforementioned assumed condition is that 100sccm and the pressure in reaction chamber are 10mTorr by the gas flow that air inlet injected promptly, is the typical case in high-density plasma CVD (HDP-CVD) system.But even variation has taken place the pressure in gas flow and the reaction chamber, the reacting gas that also can keep being infeeded in the reaction chamber according to gas injection device of the present invention evenly distributes.Also have,, utilize the aforementioned structure that is provided with described gas passage so, can make being evenly distributed of reacting gas if variation has taken place the diameter of other gas passage of each grade.Therefore, can under the condition that is not subjected to reaction chamber size, gas pressure and flow restriction, reacting gas evenly be distributed, can make described gas injection device be applicable to semiconductor processing system thus with big reaction chamber according to gas injection device of the present invention.
Since lead between the gas passage of each in each nozzle pressure evenly distribute, so two kinds or more of gas group branch is evenly mixed in each gas passage, thereby make and to be evenly distributed in the entire reaction chamber by the mixture of single gas injection device two kinds or more of gases.
Below with reference to Fig. 5-9 pair according to the preferred embodiment of the invention gas injection device be described.Reference numeral identical in different accompanying drawings is represented identical member.
Fig. 5 shows a gas injection device according to first embodiment of the invention.Shown in Figure 5 this first embodiment is such example, promptly under without the condition of any change gas injection device shown in Fig. 3 A is applied to a plasma process system.This plasma treatment system comprises a reaction chamber 180, and this reaction chamber 180 has a space that is used to form plasma.For the inside that makes reaction chamber 180 remains in vacuum state, on the diapire 181 of reaction chamber 180, be formed with a vacuum pumping hole 188, this vacuum pumping hole 188 is connected to a vacuum pump (not shown).An electrostatic chuck 184 is set at the place, bottom of reaction chamber 180, in order to support a wafer W, while plasma source 186 is set at the place, top of reaction chamber 180, in order to the reacting gass that inject in the reaction chamber 180 are carried out ionization and produce plasma.For magnetron sputtering system, plasma source 186 can be replaced by a magnetron rifle (a magnetron gun).
Gas injection device according to first embodiment of the invention comprises an air inlet 110, and this air inlet 110 runs through upper wall 182 and flat ring-type injection member 140 of reaction chamber 180, and this injection member 140 is attached on the bottom of upper wall 182 of reaction chamber 180.Injection member 140 has manifold 120, and this manifold 120 comprises gas passage 121-124 and a plurality of nozzle 130 that is arranged on a plurality of ranks.Gas passage 121-124 is arranged on the different stage on the top surface of injection member 140 successively, thereby makes gas passage 121 near the periphery of injection member 140, and gas passage 124 is near interior week of injection member 140.Details configuration, working method and the effect of described gas injection device are all as previously mentioned.
Be inserted in the groove 182a according to the injection member in the gas injection device of the present invention 140, this groove 182a forms on the bottom of upper wall 182 of reaction chamber 180.Therefore, owing to there is not the projection of orientating reaction chamber 180 inside, can not stop from the ion flow of plasma source 186 towards the wafer W motion.
Fig. 6 shows a gas injection device according to second embodiment of the invention.Shown in Figure 6 this second embodiment is such example, and promptly gas injection device shown in Fig. 3 A is modified to and has drum, and can be applied to a plasma process system.Gas injection device according to second embodiment of the invention comprises an air inlet 210, and this air inlet 210 runs through sidewall 183 and cylindrical shape injection member 240 of reaction chamber 180, and this injection member 240 is attached on the inner surface of sidewall 1 83 of reaction chamber 180.Injection member 240 has manifold 220, and this manifold 220 comprises gas passage 221-224 and a plurality of nozzle 230 that is arranged on a plurality of ranks.Injection member 240 can be inserted in the groove 183a, and this groove 183a forms on the inner surface of sidewall 183 of reaction chamber 180.
Gas passage 221-224 is made with the groove shape of desired depth along the periphery of injection member 240.Gas passage 221 to 224 short transverse of injection member 240 with different rank settings in the periphery upper edge of injection member 240, thereby makes and to watch from air inlet 210, and high-level gas passage is positioned at a position that is lower than the low level gas passage.The structure that wherein is provided with gas passage 221-224 is as described in Fig. 3 A.
Described a plurality of nozzle 230 is made into to run through injection member 240 from the inside of two end orientating reaction chambers 180 of other each gas passage 224 of lowermost level.The outlet of described a plurality of nozzle 230 is evenly spaced apart along injection member 240 in interior week.
Fig. 7 shows a gas injection device according to third embodiment of the invention.The 3rd embodiment shown in Figure 7 is such example, and promptly gas injection device is modified to cone shape shown in Fig. 3 A, and can be applied to plasma process system.Gas injection device according to third embodiment of the invention comprises an air inlet 310, this air inlet 310 runs through the upper wall 282 of reaction chamber 280, with an injection member 340, this injection member 340 is cone shape, is configured to be complementary with the conical inclination inner surface of the upper wall 282 of reaction chamber 280.Injection member 340 has manifold 320, and this manifold 320 comprises gas passage 321-324 and a plurality of nozzle 330 that is arranged on a plurality of ranks.Injection member 340 comes in contact with the inclined inner surface of the upper wall 282 of reaction chamber 280, and is supported by strutting piece 350.Strutting piece 350 is fixed on the upper wall 282 of reaction chamber 280 by screw 352.Reference numeral 284,286 and 288 refers to electrostatic chuck, plasma source and the vacuum pumping hole that is used for supporting wafers W respectively.
Gas passage 321-324 is made with the groove shape of desired depth along the outer surface of injection member 340.They along the inclined outer surface of conical injection member 340 with different rank settings, thereby make and watch that high-level gas passage is positioned at the position that is lower than the low level gas passage from air inlet 310.The structure that wherein is provided with gas passage 321-324 is as described in Fig. 3 A.
Described a plurality of nozzle 330 is made into to run through injection member 340 from the inside of two end orientating reaction chambers 280 of other each gas passage 324 of lowermost level.The outlet of described a plurality of nozzle 330 is evenly spaced apart along injection member 340 in interior week.
Fig. 8 shows a gas injection device according to fourth embodiment of the invention.Except the position that forms manifold, gas injection device has identical construction shown in this gas injection device shown in Figure 8 and Fig. 7.Gas injection device according to this 4th embodiment comprises an air inlet 410, this air inlet 410 runs through the upper wall 282 of reaction chamber 280, with an injection member 440, this injection member 440 is cone shape, and this cone shape is configured to be complementary with the conical inclination inner surface of the upper wall 282 of reaction chamber 280.Injection member 440 is supported by strutting piece 450, and strutting piece 450 is fixed on the upper wall 282 of reaction chamber 280 by screw 452.A plurality of other gas passage of the level 421-424 that are used to constitute manifold 420 are made with the groove shape of desired depth on the inclined inner surface of the upper wall 282 of reaction chamber 280, and are not that outer surface along injection member 440 is shaped.Gas passage 321-324 similar and according to third embodiment of the invention is identical for the arrangement of gas passage 421-424.Injection member 440 can be made by a kind of insulating cell that can resist sputter, such as being made by ceramic material.Also can produce semiconductor processes under the situation of obvious negative effect in the slightest sputter, injection member 440 is useful.
Each nozzle 430 all is made into the precalculated position from injection member 440 outer surfaces, and corresponding to two ends of other each gas passage 424 of lowermost level, this injection member 440 is run through in the inside of orientating reaction chamber 280.The outlet of described a plurality of nozzle 430 is evenly spaced apart along injection member 440 in interior week.
Fig. 9 shows a gas injection device according to fifth embodiment of the invention.With reference to Fig. 9, comprise an air inlet 310 and a conical injection member 340 according to the gas injection device of fifth embodiment of the invention, they all have and configuration identical shown in Fig. 7.Conical injection member 340 has manifold 320, and this manifold 320 comprises gas passage 321-324 and a plurality of nozzle 330 that is arranged on a plurality of ranks.Because these members have and identical construction shown in Fig. 7, so will omit detailed description to them at this.
Gas injection device according to fifth embodiment of the invention also comprises a shower-head type injection member 560, and this injection member 560 is set at the place, top of reaction chamber 280, is used for the middle part feed with reacting gas orientating reaction chamber 280.This structure can improve along the reaction chamber 280 distribution of gas uniformity radially.Equally, shower-head type injection member 560 can be added among first to fourth embodiment of the present invention.
As previously mentioned, the gas injection device that is used for semiconductor processing system according to the present invention has following advantage.
At first, owing to make to connect the identical length etc. of the gas passage of air inlet and a plurality of nozzles by manifold, so the gas pressure and the flow that are infeeded for each nozzle in the reaction chamber all equate, have improved the uniformity in the semiconductor chip processing procedure thus.
The second, no matter reaction chamber size, gas pressure and flow how, all can make reacting gas evenly distribute, make it can be applicable to the semiconductor processing system that has big reaction chamber according to gas injection device of the present invention thus.
The 3rd, can blocks ions not flow or microwave propagation according to gas injection device of the present invention, because it comes in contact with the chamber wall inner surface of reaction chamber or matches, and the projection that does not therefore have the orientating reaction chamber interior, can be applied to various semiconductor processing systems thus, such as plasma-enhanced CVD (PECVD) system, HDP-CVD system and magnetron sputtering system.
The 4th, the present invention is providing uniform pressure distribution towards between each bar gas passage of a plurality of nozzles, two kinds or more of gas components are evenly mixed in described gas passage, make it possible to thus be evenly distributed in the reaction chamber by the mixture of single gas injection device with two kinds or more of gases.
Although the present invention has been carried out certain illustrative and description with reference to the preferred embodiments of the present invention; but those skilled in the art it will be understood that; under the condition that does not break away from the technology of the present invention design that is defined by the following claims and protection range, can carry out multiple change to it in form and details.For example, can make amendment according to the type of semiconductor processing system, the shape and size and the similar factor of reaction chamber according to the structure of gas injection device of the present invention.Therefore, technical scope of the present invention can utilize claims to be determined.

Claims (19)

1, a kind of gas injection device is used for reacting gas is injected in the reaction chamber of semiconductor processing system, and this gas injection device comprises:
Injection member, this injection member are configured to come in contact with the chamber wall inner surface of reaction chamber, and have a plurality of nozzles that penetrate it, and by these nozzles, reacting gas is injected in the reaction chamber;
Air inlet, this air inlet run through the chamber wall of reaction chamber; And
Manifold, this manifold are set between the chamber wall and injection member of reaction chamber, are used for the reacting gas that flows into by air inlet is fed to each of described a plurality of nozzles;
Wherein, described manifold is configured to have the gas passage that is arranged on a plurality of ranks, these gas passages are used to make the equal in length of the gas passage that connects air inlet and described a plurality of nozzles, make that thus to infeed the gas flow of reaction chamber by each of described a plurality of nozzles even.
2, the device described in claim 1, wherein, other gas passage of level is divided into two arms at the place, arbitrary end of the gas passage of next higher level in described a plurality of other gas passage of level, each arm all has identical length, the gas passage of highest level is divided into two arms, each arm all has identical length at the part place that links to each other with air inlet, and in described a plurality of nozzle each all is connected on arbitrary end of other gas passage of lowermost level.
3, the device described in claim 2, wherein, described gas passage is set on four ranks.
4, the device described in claim 1 wherein, be formed with groove on the wall inner surface of the chamber of described reaction chamber, and described injection member is inserted in this groove.
5, the device described in claim 1, wherein, described gas passage is formed on the injection member surface that the chamber wall inner surface with reaction chamber comes in contact, and is the groove shape with desired depth.
6, the device described in claim 1, wherein, described gas passage is formed on the chamber wall inner surface of reaction chamber, is the groove shape with desired depth.
7, the device described in claim 6, wherein, described injection member is made by a kind of dielectric liner.
8, the device described in claim 7, wherein, described dielectric liner is made by a kind of ceramic material.
9, the device described in claim 1, wherein, along the circumference of described injection member, the outlet of described a plurality of nozzles is evenly spaced apart on the injection member surface relative with the inside of reaction chamber.
10, the device described in claim 1, wherein, described injection member is flat ring-type, and is configured to come in contact with the bottom of reaction chamber upper wall.
11, the device described in claim 10, wherein, described gas passage is with different rank settings, thereby makes and watch from air inlet, high-level gas passage is comparatively near the periphery of injection member, and the low level gas passage is comparatively near interior week of injection member.
12, the device described in claim 1, wherein, described injection member is cylindric, and is configured to come in contact with the reaction chamber inside surface of side wall.
13, the device described in claim 12, wherein, described gas passage on the periphery of injection member with different rank settings, thereby make and to watch that high-level gas passage is positioned at the position that is lower than the low level gas passage from air inlet.
14, the device described in claim 1, wherein, described injection member is coniform, and is configured to come in contact with the inclined inner surface of reaction chamber upper wall.
15, the device described in claim 14, wherein, described gas passage on the periphery of injection member with different rank settings, thereby make and to watch that high-level gas passage is positioned at the position that is lower than the low level gas passage from air inlet.
16, the device described in claim 14, wherein, described injection member is by supports support, and described strutting piece is fixed on the chamber wall of reaction chamber.
17, the device described in claim 1 also comprises the shower-head type injection member, and this injection member is set at the place, top of reaction chamber, is used for the middle part feed with reacting gas orientating reaction chamber.
18, the device described in claim 1, wherein, two kinds or more of reacting gass mix when passing described manifold, and the mixture of these two kinds or more of reacting gass is injected in the reaction chamber by described a plurality of nozzles.
19, the device described in claim 1, wherein, described gas injection device is applicable to plasma process system or magnetron sputtering system.
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US7252716B2 (en) 2007-08-07
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