JP7119779B2 - Deposition apparatus and deposition method - Google Patents

Description

The present invention relates to a film forming apparatus and a film forming method for forming a film on a substrate such as a wafer by a PVD (physical vapor deposition) method or a CVD (chemical vapor deposition) method, and particularly to a sputtering gas introduced into a vacuum chamber. , an improvement of a film forming apparatus and a film forming method in which the gas distribution of reactive gas or raw material gas is made uniform.

As a film forming apparatus (PVD film forming apparatus) using a PVD (physical vapor deposition) method, for example, as shown in FIG. A substrate holder 3 and a gas plate 4 arranged opposite to the substrate holder 3 to hold a sputtering target T and discharge a sputtering gas, a reactive gas, etc. into the vacuum chamber 1 are provided. A device in which the substrate holder 3 rotates is known. An apparatus is also known in which the gas plate 4 holding the sputtering target T rotates like the substrate holder 3 .

On the other hand, as a film forming apparatus (CVD film forming apparatus) using a CVD (chemical vapor deposition) method, for example, as shown in FIG. 12, and a gas plate 14 arranged opposite to the substrate holder 13 and discharging source gases into the vacuum chamber 11. A rotation mechanism 15 rotates the substrate holder 13 and rotates the substrate holder 13. An apparatus for heating the substrate 12 by heating means (not shown) is known. A device in which the gas plate 14, like the substrate holder 13, rotates is also known.

1 and 2, the substrates 2 and 12 such as wafers are held horizontally. Devices are also known. In particular, in a CVD film forming apparatus for forming a SiC (silicon carbide) film, a hot wall method is adopted for heating the substrate, and a heater (not shown) is arranged outside the vacuum chamber 11 or inside the vacuum chamber 11. Therefore, the substrate 12 such as a wafer is held vertically. Furthermore, in order to prevent SiC (silicon carbide) from being deposited on the inner wall surface of the vacuum chamber 11, a double chamber structure that also serves as an anti-adhesion plate for the vacuum chamber 11 is employed.

By the way, when a film is formed on a substrate such as a wafer using such a film forming apparatus, it is necessary to devise ways to make the film thickness distribution and other characteristics of the film uniform within the substrate surface. For the above uniformity, the gas distribution of sputtering gas, reactive gas, etc., the arrangement of magnets for sputtering targets, the temperature distribution of substrate heating, the flow of evacuation in the vacuum chamber, and the like are important. Also, in the CVD film forming apparatus, the distribution of gases such as raw material gases, the temperature distribution of substrate heating, the flow of evacuation in the vacuum chamber, and the like are important.

However, it is difficult to uniformize the distribution of gases such as sputtering gas, reactive gas, or raw material gas introduced into the vacuum chamber within the vacuum chamber. .

In order to avoid this problem, Patent Literature 1 employs a method of planetary rotation of the substrate (above substrate) in a vacuum chamber to uniform the film thickness distribution even when the gas distribution is uneven. However, since it is necessary to incorporate a device for planetary rotation of the base material to be film-formed, there is a new problem of increasing the size and cost of the film-forming device. Therefore, there is a demand for a method for avoiding the occurrence of film thickness unevenness by uniforming the distribution of gases such as the sputtering gas, reactive gas, or source gas introduced into the vacuum chamber.

JP 2013-14818 A (see claim 1)

The present invention has been made by paying attention to such problems, and its object is to provide a PVD method in which the gas distribution of the sputtering gas, reactive gas, raw material gas, or the like introduced into the vacuum chamber is made uniform. Alternatively, it is to provide a CVD film forming apparatus and a film forming method.

Therefore, in order to solve the above problems, the present inventors conducted intensive research on a new gas introduction mechanism for uniformizing the gas distribution of the sputtering gas, reactive gas, raw material gas, etc. introduced into the vacuum chamber. As a result, the inventors have found the following film forming apparatus and film forming method. The present invention has been completed through the discovery and technical examination of such a gas introduction mechanism.

That is, the first invention according to the present invention is
A substrate holder for holding a substrate and a gas plate arranged opposite to the substrate holder for discharging a sputtering gas, a reactive gas or a raw material gas are provided in a vacuum chamber, and PVD (physical vapor deposition) or CVD (chemical In a film forming apparatus for forming a film on the substrate by a vapor deposition method,
The gas plate has a gas plate main body, a gas introduction port provided in the gas plate main body and connected to a gas supply source on the proximal end side thereof, and provided on one surface of the gas plate main body on the distal end side thereof. and a gas path pipe having an opening communicating with the gas discharge hole,
The gas route pipe comprises an arcuate first branch pipe having a gas introduction port in the center and branch pipes of equal length extending from the gas introduction port toward both ends, and outlets on both sides of the first branch pipe. A pair of arc-shaped second branch pipes that are connected and have branch pipes of equal length in the direction of both ends (excluding arc-shaped extension pipes described below) , and both sides of the pair of second branch pipes Two pairs of arc-shaped third branch pipes each connected to the outlet and having equal length branch pipes (excluding the arc-shaped extension pipes described below) toward both ends from the connection part, and hereinafter similarly configured. having an n-stage (n is a positive integer) branch structure consisting of arc-shaped n-th branch pipes, and each side outlet of the n-th branch pipe constitutes an opening communicating with the gas discharge hole,
One or more of the gas path pipes having an n-stage branch structure are provided in the gas plate body ,
Furthermore, the upper arc-shaped branch pipe located outside has an arc-shaped extension pipe having the same radius of curvature as the upper arc-shaped branch pipe at the connecting portion with the lower arc-shaped branch pipe located inside. and the end of the arc-shaped extension pipe of the upper-stage arc-shaped branch pipe is closed without being connected to the end of the arc-shaped extension pipe of the other upper-stage arc-shaped branch pipe. It is characterized by

Moreover, the second invention according to the present invention is
In the film forming apparatus according to the first invention,
The gas plate body is composed of a base plate and a top plate joined to the base plate, and the gas path pipe is composed of a groove provided in the joint surface of the base plate,
The third invention is
In the film forming apparatus according to the first invention,
The gas plate body is composed of a base plate and a top plate joined to the base plate, and the gas path pipe is configured by aligning the grooves provided on the joining surfaces of the base plate and the top plate. characterized by
The fourth invention is
In the film forming apparatus according to the second invention or the third invention,
The base plate and top plate are joined by laser welding or electron beam welding.

Next, the fifth invention according to the present invention is
In a film formation method by a PVD (physical vapor deposition) method or a CVD (chemical vapor deposition) method,
A film is formed on a substrate held by a substrate holder using the film forming apparatus according to any one of the first to fourth inventions.

According to the film forming apparatus and film forming method according to the present invention,
Since the gas distribution of the sputtering gas, reactive gas, raw material gas, etc. introduced into the vacuum chamber is made uniform, it is possible to make the film thickness distribution within the substrate uniform without incorporating a device for planetary rotation of the substrate. becomes.

FIG. 1 is a schematic configuration diagram of a PVD film forming apparatus using a PVD (physical vapor deposition) method; FIG. 1 is a schematic configuration diagram of a CVD film forming apparatus using a CVD (chemical vapor deposition) method; FIG. 3A is an explanatory diagram of a conventional gas plate having a set of gas path pipes, and FIG. FIG. 5 is an explanatory view showing the positional relationship between the path pipe and the gas introduction port 22; FIG. 4(A) is an explanatory view of a conventional gas plate having two sets of gas path pipes, and FIG. 4(B) is a gas discharge hole (A to P, A' to P′) and the positional relationship between the gas introduction ports 32, 32′ of the two sets of gas path pipes. FIG. 5(A) is an explanatory diagram of a gas plate according to the first embodiment having a set of gas path pipes, and FIG. 5(B) is a gas discharge hole (A to P) and FIG. 4 is an explanatory view showing the positional relationship between the gas path pipe and the gas introduction port 52; FIG. 6(A) is an explanatory diagram of a gas plate according to a modification of the first embodiment, and FIG. 6(B) is a gas discharge hole (A to P) in the gas plate of FIG. 6(A) and a gas path pipe. FIG. 5 is an explanatory diagram showing a positional relationship with an introduction port 52; FIG. 7(A) is an explanatory diagram of a gas plate according to a second embodiment having two sets of gas path pipes, and FIG. 7(B) is a gas discharge hole (A to P, A ' to P') and gas introduction ports 62, 62' of the two sets of gas path pipes. FIG. 8(A) is a schematic configuration diagram showing the gas path pipe of the gas plate according to the second embodiment, and FIG. 8(B) is a cross-sectional view of FIG. 8(A) along the XY plane. 9A to 9E are process explanatory diagrams showing the manufacturing process of the gas plate according to the second embodiment. 4 is a schematic side view showing the positional relationship between the gas discharge holes of the gas plate and the substrate according to Reference Example 1. FIG. FIG. 5 is a schematic side view showing the positional relationship between the gas discharge holes of the gas plate and the substrate according to Example 2 of the present invention; 4 is a schematic plan view showing the positional relationship between the gas discharge holes (A to P) of the gas plate and the substrate according to Reference Example 1. FIG.

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments of the present invention will be described in detail while comparing them with conventional techniques.

(1) Conventional gas plate having a set of gas path pipes (1-1) Configuration of the gas plate having a set of gas path pipes Conventional gas plate having a set of gas path pipes 3(A) and 3(B), a gas plate main body 21 and a gas introduction port provided in the gas plate main body 21 and connected to a gas supply source (not shown) on the base end side thereof. 22 and a gas path pipe 24 having an opening 23 communicating with the gas discharge holes (A to P) provided on one surface of the gas plate main body 21 on the tip side thereof. Since the gas path pipes are provided inside the gas plate main body 21, the gas path pipes 24 in FIGS. 3A and 3B are shown as perspective images.

The gas route pipe 24 includes an arc-shaped branch pipe 24a having the gas inlet 22 in the center and having branch pipes of equal length toward both ends from the gas inlet 22, and the arc-shaped branch pipe 24a. The ring-shaped tube 23a is connected to the outlets 24b on both sides of the gas plate body 21. The ring-shaped tube 23a is provided with the openings 23 communicating with the gas discharge holes (A to P) provided on one surface of the gas plate body 21. ing.

(1-2) Problems of the above-mentioned gas plate according to the prior art The amount of gas released from the gas discharge holes (D, E and L, M) communicating with the openings 23 of the ring-shaped tube 23a is particularly large, and the gas discharge holes ( The amount released from H, I and P, A) is reduced. For this reason, there has been a problem that it is difficult to uniformize the gas distribution of the sputtering gas, reactive gas, raw material gas, etc. introduced into the vacuum chamber within the vacuum chamber.

(2) Conventional gas plate having two sets of gas path pipes (2-1) Configuration of the gas plate having two sets of gas path pipes Conventional gas plate having two sets of gas path pipes , as shown in FIGS. 4A and 4B, a gas plate main body 31 and a gas introduction port provided in the gas plate main body 31 and connected to a gas supply source (not shown) on the proximal end side thereof. 32 and has an opening 33 communicating with the gas discharge holes (A to P) provided on one surface of the gas plate main body 31 on its distal end side; It has a gas introduction port 32' connected to a gas supply source (not shown) on its proximal end side, and gas discharge holes (A' to P') provided on one surface of the gas plate main body 31 on its distal end side. and an inner gas path tube 34' having an opening 33' communicating with. Since each gas path pipe is provided inside the gas plate main body 31, the outer gas path pipe 34 and the inner gas path pipe 34' in FIGS. 4A to 4B are shown as perspective images. there is

The outer gas path pipe 34 includes an arc-shaped branch pipe 34a having the gas introduction port 32 in the center and having branch pipes of equal length toward both ends from the gas introduction port 32, and the arc-shaped branch pipe 34a. and an arc-shaped tube 33a connected to both side outlets 34b of 34a. The arc-shaped tube 33a has the openings 33 communicating with the gas discharge holes (A to P) provided on one surface of the gas plate main body 31. is established.

The inner gas path pipe 34' includes an arcuate branch pipe 34'a having the gas introduction port 32' in the center and having branch pipes of equal length toward both ends from the gas introduction port 32'. and a ring-shaped pipe 33'a connected to the outlets 34'b on both sides of the arc-shaped branch pipe 34'a. The opening 33' communicating with (A' to P') is provided.

(2-2) Problems of the above-mentioned gas plate according to the prior art The amount of gas released from the gas discharge holes (D, E and L, M) communicating with the openings 33 of the circular arc tube 33a is particularly large, and the gas discharge communicating with the openings 33 of the circular arc tube 33a away from the two-side outlets 34b. Less release from the pores (H, I and P, A).

In addition, the amount of gas discharged from the gas discharge holes (A' to P') of the gas plate main body 31 is The gas discharge holes (D', E' and L', M') communicating with the opening 33' have a particularly large amount of discharge, and communicate with the opening 33' of the annular tube 33'a away from the two-sided outlet 34'b. The amount of gas released from the gas release holes (H', I' and P', A') is reduced.

For this reason, there has been a problem that it is difficult to uniformize the gas distribution of the sputtering gas, reactive gas, raw material gas, etc. introduced into the vacuum chamber within the vacuum chamber.

(3) Gas plate according to the first embodiment (3-1) Configuration of the gas plate according to the first embodiment As shown in (B), a gas plate main body 51 and a gas introduction port 52 provided in the gas plate main body 51 and connected to a gas supply source (not shown) on the proximal side thereof, and the distal end thereof. It is composed of a gas path pipe 54 having an opening 53 communicating with the gas discharge holes (A to P) provided on one surface of the gas plate main body 51 on the side. Since the gas path pipes are provided inside the gas plate main body 51, the gas path pipes 54 in FIGS. 5A and 5B are shown as perspective images.

The gas route pipe 54 includes an arc-shaped first branch pipe 541 having the gas inlet 52 in the center and having branch pipes of equal length toward both ends from the gas inlet 52, and the first branch pipe 541. A pair of arc-shaped second branch pipes 542 connected to both side outlets 541b of the pipe 541 and having branch pipes of equal length toward both ends from the connecting portion, and both side outlets 542b of the pair of second branch pipes 542. and two pairs of arc-shaped third branch pipes 543 having branch pipes of equal length from the connecting portion toward both ends, and both side outlets 543b of the two pairs of arc-shaped third branch pipes 543. It is composed of four pairs of arc-shaped fourth branch pipes 544 which are connected and have branch pipes of equal length toward both ends from the connecting portion, and each arc-shaped fourth branch pipe 544 has one surface of the gas plate main body 51. The openings 53 communicating with the gas discharge holes (A to P) provided in the .

(3-2) Improvements of the gas plate according to the first embodiment In the gas route pipe 54 of the gas plate according to the first embodiment, the arc-shaped first branch pipe 541 constituting the gas route pipe 54, the circular Since the arc-shaped second branch pipe 542, the arc-shaped third branch pipe 543, and the arc-shaped fourth branch pipe 544 are set to have equal lengths, the arc-shaped fourth branch pipe 544 The distance between each opening 53 formed in the bottom and the gas introduction port 52 is substantially the same.

Therefore, regardless of the positional relationship between each opening 53 in the arc-shaped fourth branch pipe 544 and the outlets 541b on both sides of the arc-shaped first branch pipe 541, the gas discharge holes (A to P) of the gas plate main body 51 Since the amount of released gas is the same, there is an advantage that the gas distribution in the vacuum chamber, such as the sputtering gas, the reactive gas, or the source gas, can be made uniform.

(3-3) Gas Plate According to Modification of First Embodiment By the way, in the gas plate according to the first embodiment shown in FIGS. The length from the introduction port 52 to the outlets 541b on both sides (that is, the length of the branch pipes) is processed to be uniform, and the connection portion of the arc-shaped first branch pipe 541 in each arc-shaped second branch pipe 542 (both outlets 541b) to both side outlets 542b (the length of the branch pipe) is processed to be equal, and from the connection part (both side outlets 542b) of the arc-shaped second branch pipe 542 in each arc-shaped third branch pipe 543 The length up to the outlets 543b on both sides (the length of the branch pipes) is processed to be equal, and furthermore, each arc-shaped fourth branch pipe 544 is opened from the connection portion (both outlets 543b) of the arc-shaped third branch pipe 543. The length up to 53 (the length of the branch pipe) is equally processed. In this case, in order to improve the degree of freedom in machining the arc-shaped second branch pipe 542 and the arc-shaped third branch pipe 543, the structures shown in FIGS. 6A and 6B may be used.

That is, the arc lengths of the arc-shaped second branch pipe 542 and the arc-shaped third branch pipe 543 are arbitrarily processed, and as shown in FIGS. Even if both outlets 542b of the arcuate second branch pipe 542 are processed when connecting, and both outlets 543b of the arcuate third branch pipe 543 are processed when connecting with the arcuate fourth branch pipe 544. good.

(4) Gas plate according to the second embodiment (4-1) Configuration of the gas plate according to the second embodiment The gas plate according to the second embodiment having two sets of gas path pipes is shown in FIGS. As shown in (B), a gas plate main body 61 and a gas introduction port 62 provided in the gas plate main body 61 and connected to a gas supply source (not shown) on the base end side of the gas plate main body 61. an outer gas path pipe 64 having an opening 63 communicating with the gas discharge holes (A to P) provided on one surface of the gas plate main body 61 on the side thereof; It has a gas introduction port 62' connected to a source (not shown) and an opening 63' communicating with the gas discharge holes (A' to P') provided on one surface of the gas plate main body 61 on the tip side thereof. and an inner gas path tube 64'. Since the gas passage pipes are provided inside the gas plate main body 51, the outer gas passage pipe 64 and the inner gas passage pipe 64' in FIGS. 7A and 7B are shown as perspective images. . Further, the gas plate according to the second embodiment has the same structure as the gas plate according to the modified example of the first embodiment (structure with improved processing flexibility).

The outer gas path pipe 64 includes an arcuate first branch pipe 641 having the gas introduction port 62 in the center and having branch pipes of equal length toward both ends from the gas introduction port 62 , and the first branch pipe 641 . A pair of arc-shaped second branch pipes 642 connected to both side outlets 641b of the pipe 641 and having branch pipes of equal length toward both ends from the connecting portion, and both side outlets of the pair of second branch pipes 642 642b, and two pairs of arc-shaped third branch pipes 643 having branch pipes of equal length from the connecting portion toward both ends, and two pairs of arc-shaped third branch pipes 643, each of which has two outlets 643b. It is composed of four pairs of arc-shaped fourth branch pipes 644 which are connected to each other and have branch pipes of equal length toward both ends from the connecting portion. The openings 63 are formed to communicate with the gas discharge holes (A to P) provided on one surface.

In addition, the inner gas path pipe 64' includes an arcuate first branch pipe 641' having the gas introduction port 62' in the center and having branch pipes of equal length toward both ends from the gas introduction port 62', A pair of arc-shaped second branch pipes 642', which are connected to both side outlets 641'b of the first branch pipe 641' and have branch pipes of equal length toward both ends from the connecting portion, and a pair of second branch pipes 642' Two pairs of arc-shaped third branch pipes 643' each connected to each side outlet 642'b of the branch pipe 642' and having branch pipes of equal length toward both ends from the connecting portion, and two pairs of arc-shaped Consists of four pairs of arc-shaped fourth branch pipes 644 ', which are respectively connected to both side outlets 643'b of the third branch pipe 643' and have branch pipes of equal length toward both ends from the connection part, Each arc-shaped fourth branch pipe 644' is provided with the opening 63' communicating with the gas discharge holes (A' to P') provided on one surface of the gas plate main body 61. As shown in FIG.

(4-2) Improvements of the gas plate according to the second embodiment In the outer gas route pipe 64 of the gas plate according to the second embodiment, the arc-shaped first branch pipe 641 that constitutes the outer gas route pipe 64 , the arc-shaped second branch pipe 642, the arc-shaped third branch pipe 643, and the arc-shaped fourth branch pipe 644 are set to have equal lengths. The distance between each opening 63 formed in the pipe 644 and the gas introduction port 62 is substantially the same. Therefore, regardless of the positional relationship between the openings 63 in the arc-shaped fourth branch pipe 644 and the outlets 641b on both sides of the arc-shaped first branch pipe 641, from the gas discharge holes (A to P) of the gas plate main body 61 The amount of gas released will be equal.

Also, in the inner gas route pipe 64', the arc-shaped first branch pipe 641', the arc-shaped second branch pipe 642', and the arc-shaped third branch pipe 643, which constitute the inner gas route pipe 64', ' and the arc-shaped fourth branch pipe 644' are set to have the same length, each opening 63' opened in the arc-shaped fourth branch pipe 644' and the gas introduction port The distance to 62' is substantially the same. Therefore, the gas discharge holes ( The amount of gas released from A'-P') becomes equal.

Therefore, like the gas plate according to the first embodiment, there is an advantage that the gas distribution in the vacuum chamber, such as the sputtering gas, the reactive gas, or the raw material gas, can be made uniform.

In addition, the arc-shaped branch pipes constituting the gas passage pipes of the gas plate according to the first embodiment, and the arc-shaped branch pipes constituting the outer gas passage pipe and the inner gas passage pipe of the gas plate according to the second embodiment. Regarding the number of branches, the structure composed of the arc-shaped first branch pipe, the arc-shaped second branch pipe, the arc-shaped third branch pipe and the arc-shaped fourth branch pipe (gas discharge provided on the gas plate The number of openings communicating with the holes is 16), but it is not limited to such a structure. That is, when it is desired to increase the number of openings communicating with the gas discharge holes, the number of arc-shaped branch pipes constituting the gas route pipe is increased to the above-mentioned fourth branch pipe, the arc-shaped fifth branch pipe, and the circular arc-shaped branch pipe. An arc-shaped sixth branch pipe, a circular arc-shaped seventh branch pipe, etc. may be used. Just do it. Further, in the gas plates according to the first embodiment and the second embodiment, the gas inlets are provided on the side surface of the gas plate main body. A structure in which an introduction port is provided may be employed. Furthermore, if it is desired to increase the number of installed gas path pipes having a branched structure, the structure may be such that the gas introduction ports are provided on the upper surface side and the lower surface side in addition to the side surface side of the gas plate main body.

and, when only a sputtering gas such as magnetron sputtering or a mixed gas of a sputtering gas and a reactive gas is used, a gas plate according to the first embodiment having a set of gas passage tubes shown in FIG. 5, and , the gas plate according to the second embodiment having two sets of gas path pipes shown in FIG. When the gas is separately injected, a gas plate according to the second embodiment having two sets of gas path pipes shown in FIG. 7 can be used.

(5) Manufacture of gas plate according to second embodiment (5-1) Gas plate according to second embodiment As shown in FIGS. A gas plate main body 71 and a gas introduction port 72 provided in the gas plate main body 71 and connected to a gas supply source (not shown) on the proximal end side thereof, and one surface of the gas plate main body 71 on the distal end side thereof. and a gas inlet port 72 provided in the gas plate body 71 and connected to a gas supply source (not shown) at its proximal end. ' and an inner gas passage tube 74' having an opening 73' communicating with a gas discharge hole provided on one surface of the gas plate main body 71 on its tip side.

8B, the gas plate main body 71 is composed of a base plate 75 and a top plate 76 joined to the base plate 75, and is provided on the joining surface of the base plate 75. The recessed groove 77 constitutes the outer gas path pipe 74 and the inner gas path pipe 74'. Reference numeral 78 indicates the gas discharge holes that communicate with the openings 73, 73' of the outer gas path pipe 74 and the inner gas path pipe 74'.

(5-2) Manufacture of Gas Plate According to Second Embodiment Hereinafter, the manufacturing process of the gas plate according to the second embodiment shown in FIGS. 8(A) and 8(B) will be described.

As shown in FIG. 9(A), one surface of the base plate 75 is machined to form a concave groove 77 that constitutes the gas passage pipe described above, and as shown in FIG. 9(B), the outer gas passage pipe and the inner A gas discharge hole 78 communicating with each opening of the gas path pipe is penetrated.

Next, as shown in FIG. 9(C), a top plate 76 is overlaid on the formation surface of the base plate 75 in which the grooves 77 are formed, and laser welding or electron beam welding is performed as shown in FIG. 9(D). The periphery of the recessed groove 77 is welded as shown in FIG. Reference numeral 80 in FIG. 9(D) indicates a welded portion by laser welding or electron beam welding.

Then, as shown in FIG. 9(E), the gas inlet port 72 is cut from the side surface of the gas plate main body 71 composed of the base plate 75 and the top plate 76 to manufacture the gas plate according to the second embodiment. do.

It should be noted that the gas inlet 72 may be threaded or a pipe may be directly welded.

In the method of manufacturing the gas plate shown in FIGS. 9A to 9E, the concave groove 77 constituting the gas path pipe is formed on one side of the base plate 75. A method of forming the grooves on the surface and aligning the grooves of the base plate 75 and the top plate 76 to form the gas path pipe may be employed.

EXAMPLES Hereinafter, examples of the present invention will be specifically described with reference examples and comparative examples.

[ Reference example 1]
A film of SiO ₂ was formed using the PVD film forming apparatus (magnetron sputtering apparatus) shown in FIG. The gas plate 4 is the gas plate according to the first embodiment shown in FIGS. 5A and 5B having a set of gas path pipes. PCD (pitch circle diameter) of is 170 mm (see FIG. 10).

Ceramic SiC with a diameter of 150 mm was used as the sputtering target T, and a synthetic quartz substrate with a diameter of 100 mm was used as the substrate 2 . The distance between the surface of the sputtering target T and the surface of the substrate 2 was set to 50 mm.

After evacuating the vacuum chamber 1 to 10 ⁻⁵ Pa, 20 sccm of Ar gas containing 10% oxygen was introduced from the gas inlet of the gas plate 4 (see reference numeral 52 in FIG. 5), and the DC sputtering power source was set to 100 W to remove SiO ₂ . Film formation was started.

Then, the film was formed for 100 seconds, the substrate 2 was taken out, and the film thickness distribution in the circumferential direction of the substrate was measured by an ellipsometer. In addition, two cases are performed: one is to rotate the substrate 2 to form a film, and the other is to stop the rotation of the substrate 2 to form a film.

In the film formation by PVD, as shown in FIG. 10, the sputtering gas is emitted from the surroundings of the sputtering target T, so the film thickness is affected most by the gas partial pressure directly below the gas emission hole on the substrate 2. becomes a point. However, since it is difficult to measure the film thickness at the edge of the substrate 2, as shown in FIG.

Table 1 shows the relationship between the measured substrate film thickness (when the substrate is stopped and when it is rotating) and the gas discharge holes (A to P).

[Comparative Example 1]
As in Reference Example 1, a SiO ₂ film was formed using the PVD film forming apparatus (magnetron sputtering apparatus). The gas plate 4 is the gas plate according to the prior art shown in FIGS. 3A and 3B having a set of gas path pipes, the diameter of the gas plate is 250 mm, and the PCD of the gas discharge holes is 170 mm. (see FIG. 10).

Ceramic SiC with a diameter of 150 mm was used as the sputtering target T, and a synthetic quartz substrate with a diameter of 100 mm was used as the substrate 2 . The distance between the surface of the sputtering target T and the surface of the substrate 2 was set to 50 mm.

After evacuating the vacuum chamber 1 to 10 ⁻⁵ Pa, 20 sccm of Ar gas containing 10% oxygen was introduced from the gas inlet of the gas plate 4 (see reference numeral 22 in FIG. 3), and the DC sputtering power source was set to 100 W to remove SiO ₂ . Film formation was started.

Then, the film was formed for 100 seconds, the substrate 2 was taken out, and the film thickness distribution in the circumferential direction of the substrate was measured by an ellipsometer. In addition, two cases are performed: one is to rotate the substrate 2 to form a film, and the other is to stop the rotation of the substrate 2 to form a film. As in Reference Example 1, since it is difficult to measure the film thickness at the edge of the substrate 2, the measurement point is set at a position 1 cm from the circumference of the substrate 2 toward the center as shown in FIG. Table 1 shows the relationship between the measured substrate film thickness (when the substrate is stopped and when it is rotating) and the gas discharge holes (A to P).

[evaluation]
(1) From the film thickness distribution of the SiO ₂ film shown in Table 1, it is confirmed that in Reference Example 1, the film thickness distribution is almost the same when the substrate is rotating and when the substrate is stopped.

(2) However, in Comparative Example 1, the film thickness distribution when the substrate was rotating was significantly different from that when the substrate was stopped. It is confirmed that the film thickness is particularly thick near the gas discharge holes (D, E and L, M) communicating with the opening 23a of 23a when the substrate is stopped. It is presumed that this is due to the large sputtering gas flow rate near the gas discharge holes (D, E and L, M).

[Example 2]
A SiC film was formed using the CVD film forming apparatus shown in FIG. The gas plate 14 is the gas plate according to the second embodiment shown in FIGS. 7A and 7B having two sets of gas path pipes. The PCD (pitch circle diameter) of the holes is 80 mm and the PCD of the inner gas discharge holes is 40 mm (see Figure 11).

A carbon substrate having a diameter of 100 mm was used as the substrate 12, and the distance between the surface of the gas plate 14 and the surface of the substrate 12 was 50 mm.

The raw material gas introduced from the gas introduction port of the outer gas discharge hole (see numeral 62 in FIG. 7) is SiCl ₄ , and the raw material gas introduced from the gas introduction port of the inner gas discharge hole (see numeral 62′ in FIG. 7). was C ₃ H ₄ (methylacetylene), and H ₂ was introduced as the carrier gas.

Then, after the vacuum chamber 11 was evacuated to 10 ⁻⁵ Pa and the substrate 12 was heated to 1500° C., the above gas was introduced to start film formation. The film thickness distribution in the circumferential direction of the substrate was measured by an ellipsometer. In addition, two types of film formation are performed: one is to rotate the substrate 12 to form a film, and the other is to stop the rotation of the substrate 12 to form a film.

In the film formation by CVD, as shown in FIG. 11, the material gas is discharged from directly above the substrate 12, so that the gas is discharged from the middle of the outer gas discharge holes (A to P) and the inner gas discharge holes (A' to P'). The position is the location where the film thickness is most affected by the gas partial pressure. Therefore, as shown in FIG. 11, the centers (A-A' to P-P') of the outer gas discharge holes (A to P) and the inner gas discharge holes (A' to P') are used as measurement points.

Table 2 shows the relationship between the measured substrate film thickness (when the substrate is stopped and when it is rotating) and the center (A-A' to P-P') of the outer gas discharge holes and the inner gas discharge holes.

[Comparative Example 2]
As in Example 2, the SiC film was formed using the CVD film forming apparatus. The gas plate 14 is a gas plate according to the prior art shown in FIGS. 80 mm, the PCD of the inner gas discharge holes is 40 mm (see FIG. 11).

A carbon substrate having a diameter of 100 mm was used as the substrate 12, and the distance between the surface of the gas plate 14 and the surface of the substrate 12 was 50 mm.

The raw material gas introduced from the gas introduction port of the outer gas discharge hole (see numeral 32 in FIG. 4) is SiCl ₄ , and the raw material gas introduced from the gas introduction port of the inner gas discharge hole (see numeral 32' in FIG. 4). was C ₃ H ₄ (methylacetylene), and H ₂ was introduced as the carrier gas.

Then, after the vacuum chamber 11 was evacuated to 10 ⁻⁵ Pa and the substrate 12 was heated to 1500° C., the above gas was introduced to start film formation. The film thickness distribution in the circumferential direction of the substrate was measured by an ellipsometer. In addition, two types of film formation are performed: one is to rotate the substrate 12 to form a film, and the other is to stop the rotation of the substrate 12 to form a film.

Further, as in Example 2, as shown in FIG. 11, the centers (A-A'-PP') of the outer gas discharge holes (A-P) and the inner gas discharge holes (A'-P') were measured. Table 2 shows the relationship between the measured substrate film thickness (when the substrate is stopped and when it is rotating) and the center (A-A' to P-P') of the outer gas discharge holes and the inner gas discharge holes.

[evaluation]
(1) From the film thickness distribution of the SiC film shown in Table 2, it is confirmed that in Example 2 according to the present invention, the film thickness distribution when the substrate is rotating and when the substrate is stopped is almost the same.

(2) However, in Comparative Example 2, the film thickness distribution when the substrate was rotating was significantly different from that when the substrate was stopped. Gas discharge holes (D, E and L, M) shown in FIG. 4(B) communicating with the openings 33 of the arc-shaped pipe 33a located nearby, and the inner gas path pipe 34' shown in FIG. 4(A) Gas release holes (D', E' and L', It is confirmed that the film thickness is particularly thick near the intermediate position of M') when the substrate is stopped. This is due to the large raw material gas flow rate near the gas discharge holes (D, E and L, M) and the gas discharge holes (D', E', L', M') shown in FIG. 4(B). It is assumed that

According to the film forming apparatus and the film forming method according to the present invention, the distribution of gases such as the sputtering gas, reactive gas, or raw material gas introduced into the vacuum chamber is made uniform. It is possible to make the thickness distribution uniform. Therefore, it has industrial applicability for use in the production of films for semiconductor devices, films for liquid crystal display devices, films for optics, and the like.

T Sputtering targets A to P Gas discharge holes A' to P' Gas discharge holes 1, 11 Vacuum chamber 2, 12 Substrate 3, 13 Substrate holder 4, 14 Gas plate 5, 15 Rotating mechanism 21 Gas plate body,
22 Gas introduction port 23 Opening 23a Circular pipe 24 Gas path pipe 24a Circular branch pipe 24b Both sides outlet 31 Gas plate main body 32 Gas introduction port 33 Opening 33a Circular pipe 34 Outer gas route pipe 34a Circular branch pipe 34b Both sides outlet 32' gas introduction port 33' opening 33'a annular tube 34' inner gas path tube 34'a arc-shaped branch path tube 34'b both side outlets 51 gas plate main body 52 gas introduction port 53 opening 54 gas path tube 541 arc-shaped second One branch pipe 541b Both outlets 542 Arc-shaped second branch pipe 542b Both-side outlets 543 Arc-shaped third branch pipe 543b Both-side outlets 544 Arc-shaped fourth branch pipe 61 Gas plate main body 62 Gas introduction port 63 Opening 64 Outer gas Route pipe 641 Arc-shaped first branch pipe 641b Both outlets 642 Arc-shaped second branch pipe 642b Both-side outlets 643 Arc-shaped third branch pipe 643b Both-side outlets 644 Arc-shaped fourth branch pipe 62' Gas introduction port 63' Opening 64' inner gas path pipe 641' arc-shaped first branch pipe 641'b both side outlets 642' arc-shaped second branch pipe 642'b both side outlets 643' arc-shaped third branch pipe 643'b both side outlets 644 'arc-shaped fourth branch pipe 71 gas plate main body 72 gas introduction port 73 opening 74 outer gas path pipe 75 base plate 76 top plate 77 concave groove 78 gas discharge hole 72' gas introduction port 73' opening 74' inner gas path pipe 80 welded part

Claims (5)

A substrate holder for holding a substrate and a gas plate arranged opposite to the substrate holder for discharging a sputtering gas, a reactive gas or a raw material gas are provided in a vacuum chamber, and PVD (physical vapor deposition) or CVD (chemical In a film forming apparatus for forming a film on the substrate by a vapor deposition method,
The gas plate has a gas plate main body, a gas introduction port provided in the gas plate main body and connected to a gas supply source on the proximal end side thereof, and provided on one surface of the gas plate main body on the distal end side thereof. and a gas path pipe having an opening communicating with the gas discharge hole,
The gas route pipe comprises an arcuate first branch pipe having a gas introduction port in the center and branch pipes of equal length extending from the gas introduction port toward both ends, and outlets on both sides of the first branch pipe. A pair of arc-shaped second branch pipes that are connected and have branch pipes of equal length in the direction of both ends (excluding arc-shaped extension pipes described below) , and both sides of the pair of second branch pipes Two pairs of arc-shaped third branch pipes each connected to the outlet and having equal length branch pipes (excluding the arc-shaped extension pipes described below) toward both ends from the connection part, and hereinafter similarly configured. having an n-stage (n is a positive integer) branch structure consisting of arc-shaped n-th branch pipes, and each side outlet of the n-th branch pipe constitutes an opening communicating with the gas discharge hole,
One or more of the gas path pipes having an n-stage branch structure are provided in the gas plate body ,
Furthermore, the upper arc-shaped branch pipe located outside has an arc-shaped extension pipe having the same radius of curvature as the upper arc-shaped branch pipe at the connecting portion with the lower arc-shaped branch pipe located inside. and the end of the arc-shaped extension pipe of the upper-stage arc-shaped branch pipe is closed without being connected to the end of the arc-shaped extension pipe of the other upper-stage arc-shaped branch pipe. A film forming apparatus characterized by: 2. The gas path pipe according to claim 1, wherein said gas plate body is composed of a base plate and a top plate joined to said base plate, and said gas path pipe is composed of a concave groove provided in the joining surface of said base plate. Film deposition apparatus described. The gas plate body is composed of a base plate and a top plate joined to the base plate, and the gas path pipe is configured by aligning the grooves provided on the joining surfaces of the base plate and the top plate. The film forming apparatus according to claim 1, characterized by: 4. The film forming apparatus according to claim 2, wherein the base plate and the top plate are joined by laser welding or electron beam welding. In a film formation method by a PVD (physical vapor deposition) method or a CVD (chemical vapor deposition) method,
A film forming method, comprising forming a film on a substrate held by a substrate holder using the film forming apparatus according to any one of claims 1 to 4.

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