JP3501930B2 - Plasma processing method - Google Patents

Plasma processing method

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Publication number
JP3501930B2
JP3501930B2 JP32992397A JP32992397A JP3501930B2 JP 3501930 B2 JP3501930 B2 JP 3501930B2 JP 32992397 A JP32992397 A JP 32992397A JP 32992397 A JP32992397 A JP 32992397A JP 3501930 B2 JP3501930 B2 JP 3501930B2
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Japan
Prior art keywords
processing
gas
processing gas
plasma
plate
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JP32992397A
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Japanese (ja)
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JPH11158662A (en
Inventor
正成 原島
有弘 長谷部
Original Assignee
株式会社ルネサステクノロジ
株式会社ルネサス東日本セミコンダクタ
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Priority to JP32992397A priority Critical patent/JP3501930B2/en
Publication of JPH11158662A publication Critical patent/JPH11158662A/en
Application granted granted Critical
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Description

Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma processing technique, and more particularly to a technique which is effective when applied to a plasma processing for supplying a processing gas in a shower state. 2. Description of the Related Art For example, in a plasma processing apparatus such as a plasma etching apparatus, a gas is supplied into a vacuum vessel, and the vacuum vessel is evacuated to a vacuum. High-frequency power is applied to generate plasma. Generally, a semiconductor wafer is mounted on one of the opposite electrode plates, and gas is supplied from the other side to perform plasma processing on the semiconductor wafer. [0003] In this case, for example, “Industrial Research Committee”, published on November 25, 1994, “Electronic Materials” 199
As described in the literature such as four-year separate printing, P44 to P51, etc., in order to supply gas uniformly over a wide range,
A method has been adopted in which several hundred small holes are provided in a shower shape on the counter electrode plate on the gas supply side, and gas is supplied from the small holes. In such a conventional technique, gas is first introduced from one point on the upstream side of the electrode plate.
Finally, the water is supplied into the vacuum vessel from several hundred micro holes provided in the electrode plate in a shower shape. In order to uniformly supply the gas into the vacuum chamber from the shower-shaped gas hole, a space serving as a gas reservoir is provided at a position immediately before the upstream side in the electrode plate as illustrated in FIG. 5, for example. Due to the difference between the conductance of the gas hole and the conductance of the gas hole (the conductance of the space divided by the conductance of the gas hole), it is possible to expect a uniform supply to some extent. However, it is difficult with this method to make the relationship between the gas reservoir space and the individual gas holes all the same and to make the conductance constant, so that there is a technical problem that it is difficult to supply gas uniformly from the individual gas holes. is there. In addition, since the counter electrode plate is exposed to a high temperature from the plasma, it is general to control the temperature for the purpose of cooling. However, a gas reservoir space is formed upstream of the shower gas hole. Therefore, most of the inside of the electrode becomes a space, and the heat transfer area is small, and it is difficult to sufficiently control the temperature of the electrode plate itself. For this reason, the temperature of the electrode plate increases, and other technical problems such as thermal expansion of the electrode plate are also concerned. An object of the present invention is to provide a plasma processing technique capable of arbitrarily controlling a distribution of a supply amount of a processing gas supplied in a shower shape. Another object of the present invention is to provide a plasma processing technique capable of improving the uniformity of plasma processing performed by supplying a processing gas in a shower. It is another object of the present invention to provide a plasma processing technique capable of accurately controlling the temperature of an electrode for supplying a processing gas in a shower shape and a gas supply means. The above and other objects and novel features of the present invention will become apparent from the description of the present specification and the accompanying drawings. Means for Solving the Problems Of the inventions disclosed in the present application, typical ones will be briefly described as follows.
It is as follows. [0011] The plasma processing method of the present invention is to provide a process gas to the processing object contained in the processing chamber, before
Wherein the serial processing gas into a plasma by a plasma processing method for performing a desired plasma process on a target object, the object to be processed
The upper electrode facing the object joins multiple laminated pipeline boards
The processing gas is branched into the respective pipe plates.
And a conduit for flowing with uniform conductance.
Groove and a flow path of the processing gas penetrating through each pipe plate.
A through hole is formed, and the uppermost layer is formed from one gas supply hole.
The processing gas is supplied to a pipe plate, and the processing gas is
The lowermost layer of said pipes
The processing gas is uniformly supplied into the processing chamber through the through hole of the road plate.
Feeding to, and performs the plasma process. More specifically, as one example, a processing gas is introduced from one location on the electrode plate on the upstream side, and is supplied into the vacuum vessel in a shower form from a number of minute holes provided on the surface facing the workpiece. In such a configuration, the following means are used. That is, instead of the conventional gas reservoir space, a branch pipe having a common specification such as cross-sectional area and length and having a constant conductance in the flow path is formed, and the discharge end of this branch pipe is formed. In this case, a large number of minute holes are opened on the opposing surface of the workpiece. Then, the processing gas is caused to flow through the branch pipe, and the processing gas is uniformly dispersed in a shower shape through a large number of discharge ends (micro holes) to thereby supply the processing gas uniformly. [0014] This makes it possible to uniformly perform the plasma processing on the object to be processed. Furthermore, the electrode has a solid structure other than the branch pipe, and has no large space more than necessary, so that heat conductivity is good.For example, it is possible to flow a heat medium through a flow path provided inside the electrode. It is possible to accurately perform temperature adjustment by using the method described above. Further , another plasma processing method of the present invention
Is a processing gas for the object stored inside the processing chamber.
And the process gas is turned into a plasma to be processed.
In a plasma processing method for performing a desired plasma processing on an object
The upper electrode facing the object to be processed is
And each of the pipe plates has the processing gas.
Branch and flow with the desired distribution of conductance.
For this purpose, a groove serving as a pipe and the above-described process penetrating each pipe plate are provided.
Drilling by changing the dimensions of the through-hole that becomes the flow path of the natural gas independently
The processing gas is supplied from one gas supply hole to the uppermost pipe plate.
And the process gas is supplied by the plurality of conduit plates.
Branched hierarchically, the lowermost layer through the through hole of the conduit board
Supplying the processing gas into the processing chamber to perform the plasma processing;
Is what you do. Embodiments of the present invention will be described below in detail with reference to the drawings. FIG. 1 is a conceptual diagram showing an example of the configuration of a plasma etching apparatus which is an embodiment of the plasma processing method and the plasma processing apparatus of the present invention, and FIG. 2 is an assembly showing an example of the configuration of the electrodes. FIG. 3 and FIG. 3 are conceptual diagrams showing an example of a branch state of a branch pipe provided in the electrode.
FIG. 4 is an explanatory diagram showing a comparison between the electrode of the present embodiment and a conventional technology. The flow rate of the processing gas 9 a supplied from the gas cylinder 9 into the processing chamber 1 formed by the vacuum vessel 2 is adjusted by the mass flow controller 8, introduced through the gas supply system 7, and simultaneously evacuated by the vacuum pump 12. And
A pressure adjusting valve 11 is provided in the exhaust system 10 to perform pressure adjustment. In this state, the lower electrode 3 facing in the vertical direction
A high-frequency power is applied between the first electrode and the upper electrode 4 by a high-frequency power supply 13 to generate plasma 14, and the wafer 6 placed on the lower electrode 3 is etched. A heat medium passage 3a is provided inside the lower electrode 3, and a heat medium 16a of a predetermined temperature supplied from the lower electrode temperature controller 16 is caused to flow through the heat medium passage 3a. Temperature control is performed. The temperature of the upper electrode 4 is adjusted by a heat medium 15a supplied from the upper electrode temperature controller 15 as described later. In the case of the present embodiment, as illustrated in FIG. 2, the upper electrode 4 includes a cooling plate 41 and a plurality of conduit plates 42 to 42.
It has a multilayer structure in which 4n are airtightly stacked. That is, the uppermost cooling plate 41 is formed so as to surround a gas supply hole 41a penetrating the central portion and the gas supply hole 41a, and a heat medium flow passage 41b through which the heat medium 15a flows.
And a connection hole 41c connected to the upper electrode temperature controller 15
Are formed. Each of the lower pipe plates 42 to 4n is provided with a branch groove 4a radially branched in a cross shape, and is formed at the tip of the branch groove 4a so as to penetrate the pipe plate. A through hole 4b is formed. The through hole 4b of each conduit plate is formed so as to overlap the position of the branch center 4c of the branch groove 4a of the conduit plate immediately below. However, the branch center 4c of the branch groove 4a of the uppermost pipeline plate 42 among the pipeline plates 42 to 4n.
Is one gas supply hole 4 provided in the center of the cooling plate 41.
1a. Further, the plurality of through holes 4b of the lowermost conduit plate 4n function as discharge ends 4d for jetting the processing gas 9a in a shower shape. That is, in the first-stage conduit plate 42, one gas supply hole 41a of the cooling plate 41 is branched into four paths by one cross-shaped branch groove 4a, and the second-stage conduit plate In 43,
The four cross-shaped branch grooves 4a branch into 16 paths, and the third-stage conduit plate 44 further branches into sixteen paths with sixteen cross-shaped branch grooves 4a to form a fourth path. In the conduit plate 45, the branch is further branched into 256 by 64 branch grooves 4a. At this time, in each of the conduit plates 42 to 4n, the shape (width / depth / length) of the cross-shaped branch groove 4a is the same, and the diameter of the through hole 4b connecting the upper and lower conduit plates is the same. To As a result, the branch grooves 4a and the through holes 4b of the plurality of pipe plates 42 to 4n stacked in an airtight manner communicate with each other, as shown in FIG. A branch pipe line 5 having the same conduit length and cross-sectional area (distribution of change in cross-sectional area) up to the discharge end 4d and having uniform conductance is formed. That is, the processing gas 9a introduced from one location of the gas supply hole 41a at the center of the cooling plate 41 is
The operation of dividing into four by the 2 to 4n branch grooves 4a is, for example, 4 operations.
1 (in the examples of FIGS. 1 and 2 of this embodiment, two times are illustrated for simplicity of illustration) (that is, 4 times).
Pipe plates 42 to 4n), and finally, the gas supply holes 41
a is equally divided into 256 emission ends 4d. The processing accuracy of the branch groove 4a and the through hole 4b is, for example, ± 0.3 to 0.3 when the length from the tip to the tip has a distribution of 20 mm to 200 mm. Processed with a dimensional error of .5mm, branch groove 4a
And the diameter of the through hole 4b is, for example, 1 mm × 1 mm to 1.
It has been confirmed that a sufficient conductance uniformity can be obtained with a processing error of about ± 0.1 mm in the case of a distribution of 5 mm to 1.5 mm. The distribution of the processing gas 9a supplied from the upper electrode 4 into the processing chamber 1 is intended by changing the shape or the number of branches of the branch groove 4a or the diameter of the communicating hole 4b. Can be easily changed. As described above, according to the plasma etching apparatus of the present embodiment, cooling plate 41
A branch pipe 5 having a uniform conductance of a plurality of branch paths from one gas supply hole 41a to a plurality of discharge ends 4d.
, The processing gas 9a is supplied to the processing chamber 1 in the form of a shower, so that a theoretically uniform gas supply becomes possible. As a result, the uniformity of the distribution of the plasma 14 formed from the processing gas 9a supplied between the wafer 6 on the lower electrode 3 and the upper electrode 4 is improved, and the etching of the wafer 6 by the plasma 14 is improved. The etching can be performed uniformly, a uniform etching result can be obtained, and the dimensional accuracy of a circuit pattern (not shown) formed on the wafer 6 by the etching is improved. Yield and performance are improved. The supply state and distribution of the processing gas 9a from the upper electrode 4 to the processing chamber 1 are intentionally changed by changing the conductance (adjusted by the cross-sectional area and the flow path length) of the plurality of branch pipes. , And fine control of the plasma 14 according to, for example, process conditions and the like can be performed. For example, the conductance of the plurality of emission ends 4d on the outer peripheral portion of the upper electrode 4 may be set to be larger than the conductance of the plurality of inner emission ends 4d. Further, in the case of the present embodiment, the plurality of conduit plates 42 to 4n constituting the upper electrode 4 have a conventional structure in which a large gas reservoir space is formed as illustrated in FIG. The contact area, that is, the heat conduction area is larger than that of the heat medium flow passage 41b of the cooling plate 41.
Can be more accurately controlled by the heat from the heat medium 15a flowing through the upper electrode 4, and it is possible to prevent troubles such as thermal deformation of the upper electrode 4 caused by overheating or the like. Although the invention made by the present inventor has been specifically described based on the embodiments, the present invention is not limited to the above-described embodiments and can be variously modified without departing from the gist thereof. Needless to say, there is. For example, in the above embodiment, the case where the upper electrode is used as the gas supply means has been exemplified. However, the present invention includes a gas supply means provided with a branch pipe separately from the electrode. The plasma processing is not limited to plasma etching, and can be widely applied to general plasma processing such as plasma CVD. In the above description, the case where the invention made mainly by the present inventor is applied to a plasma etching step in a manufacturing process of a semiconductor device, which is the background of the application, has been described as an example. It can be widely applied to general process technology used. The effects obtained by the representative ones of the inventions disclosed in the present application will be briefly described as follows.
It is as follows. According to the plasma processing method of the present invention, the distribution of the supply amount of the processing gas supplied in the form of a shower can be arbitrarily controlled. Further, according to the plasma processing method of the present invention, there is obtained an effect that the uniformity of the plasma processing performed by supplying the processing gas in the form of a shower can be improved. Further, according to the plasma processing method of the present invention, it is possible to obtain the effect that the temperature of the electrode for supplying the processing gas in the form of a shower or the gas supply means can be accurately controlled. According to the plasma processing apparatus of the present invention, the distribution of the supply amount of the processing gas supplied in the form of a shower can be arbitrarily controlled. Further, according to the plasma processing apparatus of the present invention, it is possible to improve the uniformity of the plasma processing performed by supplying the processing gas in the form of a shower. Further, according to the plasma processing apparatus of the present invention, it is possible to obtain an effect that the temperature of the electrode for supplying the processing gas in the form of a shower or the gas supply means can be accurately controlled.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a conceptual diagram showing an example of a configuration of a plasma etching apparatus which is an embodiment of a plasma processing method and a plasma processing apparatus according to the present invention. FIG. 2 is an assembly diagram showing an example of a configuration of an electrode of a plasma etching apparatus which is an embodiment of the plasma processing method and the plasma processing apparatus according to the present invention. FIG. 3 is a conceptual diagram showing an example of a branch state of a branch pipe provided in an electrode of a plasma etching apparatus which is an embodiment of the plasma processing method and the plasma processing apparatus according to the present invention. FIG. 4 is an explanatory diagram showing an electrode according to an embodiment of the present invention and a conventional technology in comparison with each other. FIG. 5 is an explanatory view showing an example of a structure inside an electrode plate of a possible conventional plasma processing apparatus. DESCRIPTION OF SYMBOLS 1 Processing chamber 2 Vacuum container 3 Lower electrode 3a Heat medium passage 4 Upper electrode 41 Cooling plate 41a Gas supply hole 41b Heat medium flow passage 41c Connection holes 42-4n Pipe plate 4a Branch groove 4b Through hole 4c Branch Center 4d Discharge end 5 Branch line 6 Wafer 7 Gas supply system 8 Mass flow controller (gas flow controller) 9 Gas cylinder 9a Processing gas 10 Exhaust system 11 Pressure control valve 12 Vacuum pump 13 High frequency power supply 14 Plasma 15 Upper electrode temperature controller 15a Heat medium 16 Lower electrode temperature controller 16a Heat medium

────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-7-335635 (JP, A) JP-A-7-90572 (JP, A) (58) Fields investigated (Int. Cl. 7 , DB name) C23F 4/00 H01L 21/3065

Claims (1)

  1. (57) Claims 1. A processing gas is supplied to an object to be processed housed in a processing chamber, and the processing gas is turned into plasma to perform desired plasma processing on the object to be processed. A plurality of tubes in which an upper electrode facing the object to be processed is stacked
    A groove serving as a conduit for branching the processing gas and flowing with uniform conductance, and a flow path for the processing gas penetrating through each conduit plate. The processing gas is supplied from one gas supply hole to the uppermost pipe plate, and the processing gas is hierarchically branched by the plurality of pipe plates. The plasma processing method, wherein the plasma processing is performed by uniformly supplying the processing gas into the processing chamber through a through hole of the conduit plate. 2. The plasma processing method according to claim 1, wherein the upper electrode includes a plurality of plate members including a radial groove engraved on a main surface and a through-hole formed at a tip end of the groove. By radially stacking the airtight so that the center of the groove overlaps and communicates with the through-hole of the upper plate, a branch conduit is formed at the groove and the through-hole communicating with each other of the plurality of plate members. A plasma processing method characterized by comprising: 3. An object to be processed accommodated in a processing chamber.
    To supply the processing gas, and the processing gas is turned into plasma.
    Plasma processing for performing desired plasma processing on the object to be processed
    The method according to claim 1, wherein the upper electrode facing the workpiece is a plurality of stacked tubes.
    The processing gas is branched to each of the pipe plates so as to have a desired distribution.
    Channel to flow with the conductance of
    And a through hole serving as a flow path of the processing gas penetrating through each pipe plate.
    The diameter of the processing gas is independently changed, and the processing gas is supplied from one gas supply hole to the uppermost pipe plate.
    And the processing gas is hierarchically branched by the plurality of conduit plates.
    And into the processing chamber from the through hole of the lowermost pipe plate.
    Supplying the processing gas to perform the plasma processing.
    Characteristic plasma processing method.
JP32992397A 1997-12-01 1997-12-01 Plasma processing method Expired - Fee Related JP3501930B2 (en)

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US8402829B2 (en) 2005-01-03 2013-03-26 Jet-Guide Ltd. Interactive ultrasound-based depth measurement for medical applications

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TWI234417B (en) * 2001-07-10 2005-06-11 Tokyo Electron Ltd Plasma procesor and plasma processing method
US7449416B2 (en) * 2004-09-01 2008-11-11 Axcelis Technologies, Inc. Apparatus and plasma ashing process for increasing photoresist removal rate
KR100606561B1 (en) * 2004-12-23 2006-08-01 주식회사 에이디피엔지니어링 Apparatus for processing substrate with plasma
CN100451163C (en) * 2006-10-18 2009-01-14 中微半导体设备(上海)有限公司 Gas distribution device for treating reactor by semiconductor technological element and reactor thereof
JP5328134B2 (en) * 2007-10-31 2013-10-30 キヤノン株式会社 Vapor deposition apparatus and organic electroluminescence element manufacturing method
JP5718011B2 (en) * 2010-10-13 2015-05-13 東京エレクトロン株式会社 Plasma processing apparatus and processing gas supply structure thereof
TWI568319B (en) * 2011-10-05 2017-01-21 應用材料股份有限公司 Plasma processing apparatus and lid assembly thereof (2)
JP6157061B2 (en) * 2012-05-11 2017-07-05 東京エレクトロン株式会社 Gas supply apparatus and substrate processing apparatus
JP2014057047A (en) * 2012-08-10 2014-03-27 Tokyo Electron Ltd Substrate processing apparatus and gas supply apparatus
JP5862529B2 (en) * 2012-09-25 2016-02-16 東京エレクトロン株式会社 Substrate processing apparatus and gas supply apparatus
JP6078354B2 (en) * 2013-01-24 2017-02-08 東京エレクトロン株式会社 Plasma processing equipment

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US8402829B2 (en) 2005-01-03 2013-03-26 Jet-Guide Ltd. Interactive ultrasound-based depth measurement for medical applications

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