CN1492443A - 每个存储单元具有多位的磁存储器件 - Google Patents
每个存储单元具有多位的磁存储器件 Download PDFInfo
- Publication number
- CN1492443A CN1492443A CNA031363784A CN03136378A CN1492443A CN 1492443 A CN1492443 A CN 1492443A CN A031363784 A CNA031363784 A CN A031363784A CN 03136378 A CN03136378 A CN 03136378A CN 1492443 A CN1492443 A CN 1492443A
- Authority
- CN
- China
- Prior art keywords
- conductor
- data
- layer
- storage unit
- storage device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005291 magnetic effect Effects 0.000 title claims description 69
- 238000013500 data storage Methods 0.000 claims abstract description 11
- 239000004020 conductor Substances 0.000 claims description 41
- 230000004888 barrier function Effects 0.000 claims description 17
- 230000000452 restraining effect Effects 0.000 claims description 17
- 239000011248 coating agent Substances 0.000 claims description 10
- 238000000576 coating method Methods 0.000 claims description 10
- 230000003071 parasitic effect Effects 0.000 claims description 7
- 239000003302 ferromagnetic material Substances 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 230000005294 ferromagnetic effect Effects 0.000 claims description 4
- 239000010410 layer Substances 0.000 claims 9
- 239000011229 interlayer Substances 0.000 claims 2
- 230000005415 magnetization Effects 0.000 description 29
- 238000000034 method Methods 0.000 description 6
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 3
- 230000005290 antiferromagnetic effect Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910000863 Ferronickel Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- RIVZIMVWRDTIOQ-UHFFFAOYSA-N cobalt iron Chemical compound [Fe].[Co].[Co].[Co] RIVZIMVWRDTIOQ-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 230000024241 parasitism Effects 0.000 description 1
- 229910000889 permalloy Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000003019 stabilising effect Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5607—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using magnetic storage elements
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (9)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/235045 | 2002-09-03 | ||
US10/235,045 US6801451B2 (en) | 2002-09-03 | 2002-09-03 | Magnetic memory devices having multiple bits per memory cell |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1492443A true CN1492443A (zh) | 2004-04-28 |
CN100424783C CN100424783C (zh) | 2008-10-08 |
Family
ID=31887692
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB031363784A Expired - Lifetime CN100424783C (zh) | 2002-09-03 | 2003-06-03 | 每个存储单元具有多位的磁存储器件 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6801451B2 (zh) |
EP (1) | EP1398788A2 (zh) |
JP (1) | JP2004096116A (zh) |
KR (1) | KR100995397B1 (zh) |
CN (1) | CN100424783C (zh) |
TW (1) | TW200404287A (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102918649A (zh) * | 2010-06-30 | 2013-02-06 | 国际商业机器公司 | 磁性随机存取存储器设备和生产磁性随机存取存储器设备的方法 |
CN105849809A (zh) * | 2013-12-06 | 2016-08-10 | 英派尔科技开发有限公司 | 具有多个存储状态的非易失性sram |
CN111640769A (zh) * | 2019-03-01 | 2020-09-08 | 中电海康集团有限公司 | 自旋轨道矩磁性存储器单元及磁性存储器 |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3788964B2 (ja) * | 2002-09-10 | 2006-06-21 | 株式会社東芝 | 磁気ランダムアクセスメモリ |
US6862215B1 (en) * | 2002-10-28 | 2005-03-01 | Silicon Magnetic Systems | MRAM data line configuration and method of operation |
US6947313B2 (en) * | 2003-08-27 | 2005-09-20 | Hewlett-Packard Development Company, L.P. | Method and apparatus of coupling conductors in magnetic memory |
US20050073878A1 (en) * | 2003-10-03 | 2005-04-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Multi-sensing level MRAM structure with different magnetoresistance ratios |
KR100867662B1 (ko) * | 2004-03-12 | 2008-11-10 | 도쿠리쓰교세이호징 가가쿠 기주쓰 신코 기코 | 자기저항소자, 터널 장벽층 및 자기저항소자의 제조방법 |
US20060039183A1 (en) * | 2004-05-21 | 2006-02-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Multi-sensing level MRAM structures |
US7173848B2 (en) * | 2005-02-01 | 2007-02-06 | Meglabs, Inc. | Magnetic random access memory with memory cell stacks having more than two magnetic states |
US7285836B2 (en) * | 2005-03-09 | 2007-10-23 | Maglabs, Inc. | Magnetic random access memory with stacked memory cells having oppositely-directed hard-axis biasing |
KR100816759B1 (ko) * | 2006-11-09 | 2008-03-25 | 삼성전자주식회사 | 가변저항 스토리지를 갖는 비휘발성 기억 장치 및 동작방법 |
KR100885184B1 (ko) * | 2007-01-30 | 2009-02-23 | 삼성전자주식회사 | 전기장 및 자기장에 의해 독립적으로 제어될 수 있는 저항특성을 갖는 메모리 장치 및 그 동작 방법 |
US7539047B2 (en) * | 2007-05-08 | 2009-05-26 | Honeywell International, Inc. | MRAM cell with multiple storage elements |
US8411494B2 (en) | 2009-07-21 | 2013-04-02 | Alexander Mikhailovich Shukh | Three-dimensional magnetic random access memory with high speed writing |
EP2447949B1 (en) * | 2010-10-26 | 2016-11-30 | Crocus Technology | Multi level magnetic element |
WO2012105955A1 (en) * | 2011-02-01 | 2012-08-09 | Hewlett-Packard Development Company L.P. | Negative differential resistance device |
EP2506265B1 (en) * | 2011-03-28 | 2019-06-05 | Crocus Technology | Magnetic random access memory cell with a dual junction for ternary content addressable memory applications |
US8976577B2 (en) | 2011-04-07 | 2015-03-10 | Tom A. Agan | High density magnetic random access memory |
US9070456B2 (en) | 2011-04-07 | 2015-06-30 | Tom A. Agan | High density magnetic random access memory |
KR20130015927A (ko) * | 2011-08-05 | 2013-02-14 | 에스케이하이닉스 주식회사 | 멀티 레벨을 갖는 자기 저항 메모리 장치 및 그 구동방법 |
US9558869B2 (en) | 2013-07-30 | 2017-01-31 | Hewlett Packard Enterprise Development Lp | Negative differential resistance device |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5703805A (en) | 1996-05-08 | 1997-12-30 | Motorola | Method for detecting information stored in a MRAM cell having two magnetic layers in different thicknesses |
US5930164A (en) | 1998-02-26 | 1999-07-27 | Motorola, Inc. | Magnetic memory unit having four states and operating method thereof |
TW584976B (en) * | 2000-11-09 | 2004-04-21 | Sanyo Electric Co | Magnetic memory device |
US6404674B1 (en) * | 2001-04-02 | 2002-06-11 | Hewlett Packard Company Intellectual Property Administrator | Cladded read-write conductor for a pinned-on-the-fly soft reference layer |
US6593608B1 (en) | 2002-03-15 | 2003-07-15 | Hewlett-Packard Development Company, L.P. | Magneto resistive storage device having double tunnel junction |
US6775196B2 (en) * | 2002-07-12 | 2004-08-10 | Hewlett-Packard Development Company, L.P. | Magnetic memory having a temperature compensated write circuit |
-
2002
- 2002-09-03 US US10/235,045 patent/US6801451B2/en not_active Expired - Lifetime
-
2003
- 2003-03-17 TW TW092105816A patent/TW200404287A/zh unknown
- 2003-06-03 CN CNB031363784A patent/CN100424783C/zh not_active Expired - Lifetime
- 2003-09-02 EP EP20030255482 patent/EP1398788A2/en not_active Withdrawn
- 2003-09-02 KR KR1020030060984A patent/KR100995397B1/ko active IP Right Grant
- 2003-09-03 JP JP2003310898A patent/JP2004096116A/ja not_active Withdrawn
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102918649A (zh) * | 2010-06-30 | 2013-02-06 | 国际商业机器公司 | 磁性随机存取存储器设备和生产磁性随机存取存储器设备的方法 |
CN102918649B (zh) * | 2010-06-30 | 2015-12-16 | 国际商业机器公司 | 磁性随机存取存储器设备和生产磁性随机存取存储器设备的方法 |
CN105849809A (zh) * | 2013-12-06 | 2016-08-10 | 英派尔科技开发有限公司 | 具有多个存储状态的非易失性sram |
US9966140B2 (en) | 2013-12-06 | 2018-05-08 | Empire Technology Development Llc | Non-volatile SRAM with multiple storage states |
CN105849809B (zh) * | 2013-12-06 | 2018-08-28 | 英派尔科技开发有限公司 | 具有多个存储状态的非易失性sram |
CN111640769A (zh) * | 2019-03-01 | 2020-09-08 | 中电海康集团有限公司 | 自旋轨道矩磁性存储器单元及磁性存储器 |
WO2020177451A1 (zh) * | 2019-03-01 | 2020-09-10 | 浙江驰拓科技有限公司 | 自旋轨道矩磁性存储器单元及磁性存储器 |
CN111640769B (zh) * | 2019-03-01 | 2023-04-18 | 中电海康集团有限公司 | 自旋轨道矩磁性存储器单元及磁性存储器 |
Also Published As
Publication number | Publication date |
---|---|
EP1398788A2 (en) | 2004-03-17 |
KR100995397B1 (ko) | 2010-11-19 |
TW200404287A (en) | 2004-03-16 |
CN100424783C (zh) | 2008-10-08 |
KR20040020835A (ko) | 2004-03-09 |
US6801451B2 (en) | 2004-10-05 |
JP2004096116A (ja) | 2004-03-25 |
US20040042264A1 (en) | 2004-03-04 |
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Owner name: SAMSUNG ELECTRONICS CO., LTD Free format text: FORMER OWNER: HEWLETT-PACKARAD DEVELOPMENT INC. Effective date: 20071228 |
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C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20071228 Address after: Gyeonggi Do, South Korea Applicant after: SAMSUNG ELECTRONICS Co.,Ltd. Address before: Texas, USA Applicant before: Hewlett-Packard Development Co.,L.P. |
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Granted publication date: 20081008 |