CN100424783C - 每个存储单元具有多位的磁存储器件 - Google Patents
每个存储单元具有多位的磁存储器件 Download PDFInfo
- Publication number
- CN100424783C CN100424783C CNB031363784A CN03136378A CN100424783C CN 100424783 C CN100424783 C CN 100424783C CN B031363784 A CNB031363784 A CN B031363784A CN 03136378 A CN03136378 A CN 03136378A CN 100424783 C CN100424783 C CN 100424783C
- Authority
- CN
- China
- Prior art keywords
- conductor
- data
- storage unit
- layer
- magnetoresistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5607—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using magnetic storage elements
Abstract
Description
Claims (9)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/235045 | 2002-09-03 | ||
US10/235,045 US6801451B2 (en) | 2002-09-03 | 2002-09-03 | Magnetic memory devices having multiple bits per memory cell |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1492443A CN1492443A (zh) | 2004-04-28 |
CN100424783C true CN100424783C (zh) | 2008-10-08 |
Family
ID=31887692
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB031363784A Expired - Lifetime CN100424783C (zh) | 2002-09-03 | 2003-06-03 | 每个存储单元具有多位的磁存储器件 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6801451B2 (zh) |
EP (1) | EP1398788A2 (zh) |
JP (1) | JP2004096116A (zh) |
KR (1) | KR100995397B1 (zh) |
CN (1) | CN100424783C (zh) |
TW (1) | TW200404287A (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103430246A (zh) * | 2011-02-01 | 2013-12-04 | 惠普发展公司,有限责任合伙企业 | 负微分电阻装置 |
US9558869B2 (en) | 2013-07-30 | 2017-01-31 | Hewlett Packard Enterprise Development Lp | Negative differential resistance device |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3788964B2 (ja) * | 2002-09-10 | 2006-06-21 | 株式会社東芝 | 磁気ランダムアクセスメモリ |
US6862215B1 (en) * | 2002-10-28 | 2005-03-01 | Silicon Magnetic Systems | MRAM data line configuration and method of operation |
US6947313B2 (en) * | 2003-08-27 | 2005-09-20 | Hewlett-Packard Development Company, L.P. | Method and apparatus of coupling conductors in magnetic memory |
US20050073878A1 (en) * | 2003-10-03 | 2005-04-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Multi-sensing level MRAM structure with different magnetoresistance ratios |
US20060039183A1 (en) * | 2004-05-21 | 2006-02-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Multi-sensing level MRAM structures |
US7173848B2 (en) * | 2005-02-01 | 2007-02-06 | Meglabs, Inc. | Magnetic random access memory with memory cell stacks having more than two magnetic states |
US7285836B2 (en) * | 2005-03-09 | 2007-10-23 | Maglabs, Inc. | Magnetic random access memory with stacked memory cells having oppositely-directed hard-axis biasing |
KR100816759B1 (ko) * | 2006-11-09 | 2008-03-25 | 삼성전자주식회사 | 가변저항 스토리지를 갖는 비휘발성 기억 장치 및 동작방법 |
KR100885184B1 (ko) * | 2007-01-30 | 2009-02-23 | 삼성전자주식회사 | 전기장 및 자기장에 의해 독립적으로 제어될 수 있는 저항특성을 갖는 메모리 장치 및 그 동작 방법 |
US7539047B2 (en) * | 2007-05-08 | 2009-05-26 | Honeywell International, Inc. | MRAM cell with multiple storage elements |
US8411494B2 (en) | 2009-07-21 | 2013-04-02 | Alexander Mikhailovich Shukh | Three-dimensional magnetic random access memory with high speed writing |
WO2012001555A1 (en) * | 2010-06-30 | 2012-01-05 | International Business Machines Corporation | Magnetic random access memory device and method for producing a magnetic random access memory device |
EP2447949B1 (en) * | 2010-10-26 | 2016-11-30 | Crocus Technology | Multi level magnetic element |
EP2506265B1 (en) * | 2011-03-28 | 2019-06-05 | Crocus Technology | Magnetic random access memory cell with a dual junction for ternary content addressable memory applications |
US8976577B2 (en) | 2011-04-07 | 2015-03-10 | Tom A. Agan | High density magnetic random access memory |
US9070456B2 (en) | 2011-04-07 | 2015-06-30 | Tom A. Agan | High density magnetic random access memory |
KR20130015927A (ko) * | 2011-08-05 | 2013-02-14 | 에스케이하이닉스 주식회사 | 멀티 레벨을 갖는 자기 저항 메모리 장치 및 그 구동방법 |
CN105849809B (zh) * | 2013-12-06 | 2018-08-28 | 英派尔科技开发有限公司 | 具有多个存储状态的非易失性sram |
CN111640769B (zh) * | 2019-03-01 | 2023-04-18 | 中电海康集团有限公司 | 自旋轨道矩磁性存储器单元及磁性存储器 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5703805A (en) * | 1996-05-08 | 1997-12-30 | Motorola | Method for detecting information stored in a MRAM cell having two magnetic layers in different thicknesses |
US5930164A (en) * | 1998-02-26 | 1999-07-27 | Motorola, Inc. | Magnetic memory unit having four states and operating method thereof |
EP1205937A2 (en) * | 2000-11-09 | 2002-05-15 | Sanyo Electric Co., Ltd. | Magnetic memory device including storage element exhibiting ferromagnetic tunnel effect |
US6404674B1 (en) * | 2001-04-02 | 2002-06-11 | Hewlett Packard Company Intellectual Property Administrator | Cladded read-write conductor for a pinned-on-the-fly soft reference layer |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6593608B1 (en) * | 2002-03-15 | 2003-07-15 | Hewlett-Packard Development Company, L.P. | Magneto resistive storage device having double tunnel junction |
US6775196B2 (en) * | 2002-07-12 | 2004-08-10 | Hewlett-Packard Development Company, L.P. | Magnetic memory having a temperature compensated write circuit |
-
2002
- 2002-09-03 US US10/235,045 patent/US6801451B2/en not_active Expired - Lifetime
-
2003
- 2003-03-17 TW TW092105816A patent/TW200404287A/zh unknown
- 2003-06-03 CN CNB031363784A patent/CN100424783C/zh not_active Expired - Lifetime
- 2003-09-02 KR KR1020030060984A patent/KR100995397B1/ko active IP Right Grant
- 2003-09-02 EP EP20030255482 patent/EP1398788A2/en not_active Withdrawn
- 2003-09-03 JP JP2003310898A patent/JP2004096116A/ja not_active Withdrawn
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5703805A (en) * | 1996-05-08 | 1997-12-30 | Motorola | Method for detecting information stored in a MRAM cell having two magnetic layers in different thicknesses |
US5930164A (en) * | 1998-02-26 | 1999-07-27 | Motorola, Inc. | Magnetic memory unit having four states and operating method thereof |
EP1205937A2 (en) * | 2000-11-09 | 2002-05-15 | Sanyo Electric Co., Ltd. | Magnetic memory device including storage element exhibiting ferromagnetic tunnel effect |
US6404674B1 (en) * | 2001-04-02 | 2002-06-11 | Hewlett Packard Company Intellectual Property Administrator | Cladded read-write conductor for a pinned-on-the-fly soft reference layer |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103430246A (zh) * | 2011-02-01 | 2013-12-04 | 惠普发展公司,有限责任合伙企业 | 负微分电阻装置 |
US9159476B2 (en) | 2011-02-01 | 2015-10-13 | Hewlett-Packard Development Company, L.P. | Negative differential resistance device |
US9558869B2 (en) | 2013-07-30 | 2017-01-31 | Hewlett Packard Enterprise Development Lp | Negative differential resistance device |
Also Published As
Publication number | Publication date |
---|---|
US6801451B2 (en) | 2004-10-05 |
EP1398788A2 (en) | 2004-03-17 |
CN1492443A (zh) | 2004-04-28 |
TW200404287A (en) | 2004-03-16 |
US20040042264A1 (en) | 2004-03-04 |
KR20040020835A (ko) | 2004-03-09 |
KR100995397B1 (ko) | 2010-11-19 |
JP2004096116A (ja) | 2004-03-25 |
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Effective date of registration: 20071228 Address after: Gyeonggi Do, South Korea Applicant after: SAMSUNG ELECTRONICS Co.,Ltd. Address before: Texas, USA Applicant before: Hewlett-Packard Development Co.,L.P. |
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