CN1489225A - 高效发光二极管及其制造方法 - Google Patents
高效发光二极管及其制造方法 Download PDFInfo
- Publication number
- CN1489225A CN1489225A CNA031490522A CN03149052A CN1489225A CN 1489225 A CN1489225 A CN 1489225A CN A031490522 A CNA031490522 A CN A031490522A CN 03149052 A CN03149052 A CN 03149052A CN 1489225 A CN1489225 A CN 1489225A
- Authority
- CN
- China
- Prior art keywords
- compound semiconductor
- semiconductor layer
- type compound
- light
- mentioned
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 7
- 239000004065 semiconductor Substances 0.000 claims abstract description 82
- 150000001875 compounds Chemical class 0.000 claims abstract description 79
- 238000000034 method Methods 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 238000005530 etching Methods 0.000 claims description 11
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 3
- 238000004088 simulation Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (8)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR62116/02 | 2002-10-11 | ||
KR10-2002-0062116A KR100499131B1 (ko) | 2002-10-11 | 2002-10-11 | 고효율 광방출 다이오드 및 그 제조방법 |
KR62116/2002 | 2002-10-11 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1489225A true CN1489225A (zh) | 2004-04-14 |
CN100428503C CN100428503C (zh) | 2008-10-22 |
Family
ID=32064932
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB031490522A Expired - Fee Related CN100428503C (zh) | 2002-10-11 | 2003-06-20 | 高效发光二极管及其制造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20040069983A1 (zh) |
JP (1) | JP2004134798A (zh) |
KR (1) | KR100499131B1 (zh) |
CN (1) | CN100428503C (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102544269A (zh) * | 2012-03-05 | 2012-07-04 | 映瑞光电科技(上海)有限公司 | 侧壁具有微柱透镜阵列图案的led芯片的制造方法 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101008286B1 (ko) * | 2005-09-29 | 2011-01-13 | 주식회사 에피밸리 | 3족 질화물 반도체 발광소자 |
KR101330253B1 (ko) * | 2007-03-27 | 2013-11-15 | 서울바이오시스 주식회사 | 발광 다이오드 제조방법 |
KR100881175B1 (ko) * | 2007-06-28 | 2009-02-26 | 서울옵토디바이스주식회사 | 요철이 형성된 발광 다이오드 및 그 제조방법 |
KR100897871B1 (ko) * | 2007-08-30 | 2009-05-15 | 서울옵토디바이스주식회사 | 발광 다이오드 및 그 제조방법 |
JP2011035017A (ja) * | 2009-07-30 | 2011-02-17 | Hitachi Cable Ltd | 発光素子 |
KR101171360B1 (ko) | 2009-12-14 | 2012-08-10 | 서울옵토디바이스주식회사 | 발광 다이오드 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62169388A (ja) * | 1986-01-21 | 1987-07-25 | Oki Electric Ind Co Ltd | 半導体レ−ザ素子 |
JPH01200580A (ja) * | 1988-02-05 | 1989-08-11 | Oki Densen Kk | 押し付け接続兼揺動形コネクタ |
JP2870449B2 (ja) * | 1995-04-10 | 1999-03-17 | サンケン電気株式会社 | 半導体発光素子及びその製造方法 |
JP2907170B2 (ja) * | 1996-12-28 | 1999-06-21 | サンケン電気株式会社 | 半導体発光素子 |
JP3767156B2 (ja) * | 1998-02-23 | 2006-04-19 | 住友電気工業株式会社 | 光送受信モジュ−ル |
JP3649656B2 (ja) * | 2000-06-13 | 2005-05-18 | 日本電信電話株式会社 | 半導体レーザ |
JP3852000B2 (ja) * | 2001-09-28 | 2006-11-29 | 豊田合成株式会社 | 発光素子 |
-
2002
- 2002-10-11 KR KR10-2002-0062116A patent/KR100499131B1/ko not_active IP Right Cessation
-
2003
- 2003-05-30 US US10/448,143 patent/US20040069983A1/en not_active Abandoned
- 2003-06-20 CN CNB031490522A patent/CN100428503C/zh not_active Expired - Fee Related
- 2003-10-07 JP JP2003348164A patent/JP2004134798A/ja active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102544269A (zh) * | 2012-03-05 | 2012-07-04 | 映瑞光电科技(上海)有限公司 | 侧壁具有微柱透镜阵列图案的led芯片的制造方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20040033184A (ko) | 2004-04-21 |
CN100428503C (zh) | 2008-10-22 |
US20040069983A1 (en) | 2004-04-15 |
KR100499131B1 (ko) | 2005-07-04 |
JP2004134798A (ja) | 2004-04-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SAMSUNG LED CO., LTD. Free format text: FORMER OWNER: SAMSUNG ELECTRO-MECHANICS CO., LTD. Effective date: 20100919 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: GYEONGGI, SOUTH KOREA TO: SUWON CITY, GYEONGGI, SOUTH KOREA |
|
TR01 | Transfer of patent right |
Effective date of registration: 20100919 Address after: Gyeonggi Do Korea Suwon Patentee after: Samsung LED Co., Ltd. Address before: Gyeonggi Do, South Korea Patentee before: Samsung Electro-Mechanics Co., Ltd. |
|
ASS | Succession or assignment of patent right |
Owner name: SAMSUNG ELECTRONICS CO., LTD. Free format text: FORMER OWNER: SAMSUNG LED CO., LTD. Effective date: 20121205 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20121205 Address after: Gyeonggi Do, South Korea Patentee after: Samsung Electronics Co., Ltd. Address before: Gyeonggi Do Korea Suwon Patentee before: Samsung LED Co., Ltd. |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20081022 Termination date: 20140620 |
|
EXPY | Termination of patent right or utility model |