CN1471176B - 用于制造太阳能电池的纤维和窄带材 - Google Patents

用于制造太阳能电池的纤维和窄带材 Download PDF

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CN1471176B
CN1471176B CN031427472A CN03142747A CN1471176B CN 1471176 B CN1471176 B CN 1471176B CN 031427472 A CN031427472 A CN 031427472A CN 03142747 A CN03142747 A CN 03142747A CN 1471176 B CN1471176 B CN 1471176B
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A·F·卡罗尔
C·J·罗奇
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Abstract

本发明涉及在太阳能电池结构制造中将纤维或窄带材粘附到基底以将无机材料转移到该基底的方法，所述方法包括a)将包含混合有适于形成可纺分散体的聚合物的导电无机材料的纤维或窄带材以形成太阳能电池结构所需的取向粘附在基底上，其中，所述纤维或窄带材通过干纺、湿纺、熔纺或凝胶纺形成；和b)将所述结构加热至能有效除去所述聚合物的温度，使无机材料以所需的取向粘附在所述基底上。本发明还涉及用于制造太阳能电池结构用特征构件的纤维或窄带材，所述纤维或窄带材包含混合有适于形成可纺分散体的聚合物的导电无机材料，且所述纤维或窄带材通过干纺、湿纺、熔纺或凝胶纺形成。

Description

用于制造太阳能电池的纤维和窄带材
技术领域
本发明涉及含有有机聚合物和无机材料的纤维或窄带材。本发明还涉及使用这种纤维或窄带材制造太阳能电池结构特征构件的方法。 
技术背景
p-型基常规太阳能电池结构具有通常在电池正面或者朝向太阳一面上的负极和背面的正极。所述太阳能电池具有靠近其正表面的载流子(carrier)收集结点。所述正表面和相互平行的指针(finger)接触，各指针通常宽度约为140微米。所述指针通过两条汇流条连接，所述汇流条和所述指针垂直。通常，5平方英寸的电池具有约55个指针，它们之间相互间隔约2.1毫米。通过太阳能电池收集储存的电流可以通过正表面上掺杂区域的金属触点并通过和背表面上反向掺杂区域的二次接触来收集。 
当通过常规图案形成技术如丝网印刷、溅射或化学蚀刻方法进行施涂时，很难获得用于形成负极的很细的线路和间隔分辨率。本发明允许使用纤维或窄带材，其中导电金属颗粒集成在纤维或窄带材中，在太阳能电池结构的正表面形成这种电极。所述纤维和窄带材允许具有厚度提高的更窄线路，这可以通过降低电池遮蔽损失来提高电池能量，而不会提高线路的电阻。目前，遮蔽损失占太阳能电池结构中损失的约9％。更窄的线路将充分降低这种损失。 
美国专利No.3,686,036、4,082,568、4,347,262和4,235,644揭示了各种太阳能电池装置和制造方法。 
发明内容
本发明提供制造太阳能电池结构上的电极的方法，所述方法包括将包含有机聚合物和导电材料的纤维或窄带材以形成太阳能电池结构所需的取向粘附在基底如硅晶片上；将所述结构加热至所述有机聚合物熔点以上的温度；并将所述结构加热至能充分有效地几乎完全除去有机聚合物的温度，使无机材料以所需的取向粘附在所述基底上。 
本发明也涉及用于制造位于太阳能电池结构正表面上的电极的纤维或窄带材，所述纤维或窄带材包含混合有适于形成可纺分散体的聚合物的导电颗粒、绝缘颗粒或者它们的混合物。 
附图说明
图1是太阳能电池上表面金属化的图例。
图2是具有压盘的图1的截面图。 
图3是显示加工后纤维排布的图例。 
图4是燃烧后太阳能电池的图例。 
具体实施方式
本发明涉及使用纤维或窄带材制造太阳能电池结构的方法，所述纤维或窄带材包含混合有可纺纤维形成分散体的导电金属颗粒。 
当所述纤维或窄带材的无机材料为导电金属颗粒时，使用纤维或窄带材的例子包括制造太阳能电池结构上的特片构件，例如负极或发射板。 
适用于本发明的聚合物包括那些形成含有无机材料如导电金属颗粒的可纺分散体的聚合物。所述聚合物必须可溶于合适的溶剂中，以制备包含聚合物和无机材料颗粒的分散体。所得含有无机材料的聚合物分散体必须能纺成柔韧的纤维或挤出成柔韧的窄带材。如本文所用的，术语“纤维”是指单个柔韧的细丝、缠绕或者绑在一起的一组柔韧的细丝、或者相互并排放置形成一捆的一组柔韧的细丝。所述成捆纤维可以进行涂覆以提供对纤维的保护，或者不进行涂覆。从横截面来看，所述纤维或纤维捆可以是圆形、椭圆形、正方形、矩形、三角形以及其它的形状。术语“窄带材”是指柔韧的条带且可以是一种均匀的窄带材；或者可以通过在相同平面上平铺一层以上的纤维来制造；或者可以是若干均匀的窄带材或纤维面或者它们的复合物，将它们相互叠放形成窄带状的结构。虽然优选各纤维或窄带材具有相同的化学性质，但是有一些应用可以认为是各纤维或窄带材不同化学性能的综合。纤维直径通常为20-100微米，但是对一些应用来说，可以超过这一范围。窄带材尺寸通常宽度可高达200微米、高度可达到100微米，但是对一些应用来说可以超过这一范围。纤维或窄带材的长度优选为连续的，但是不连续的纤维或窄带材长度也适于形成组件。而且，必须选择聚合物，使之能软化且完全熔化，例如，所述聚合物必须燃尽，不留 下任何残留物。在无机材料存在下，所述聚合物在分解之前必须具有熔点。由所选聚合物形成的聚合物熔融物必须润湿其上安装有太阳能电池的材料。符合上述选择程序的聚合物例子包括乙烯/乙酸乙烯酯共聚物，可从DuPont Company(Wilmington DE)以商品名 购得。而且，聚甲基丙烯酸甲酯适于本发明且可从DuPont Company(Wilmington DE)以商品名 
Figure BYZ000000608122500032
购得。其它合适的乙烯/乙酸乙烯酯共聚物和聚甲基丙烯酸甲酯可从制造厂家如Dow和Exxon购得。 
用于制备可纺无机材料/聚合物分散体的有机溶剂以对聚合物的高溶解性和在便于将无机材料纺成聚合物纤维或窄带材的纱纺温度下具有高蒸汽压为特征。一些合适的溶剂例子包括四氯乙烯、甲苯和二甲苯。干纺是形成纤维或窄带材用的优选技术。但是，可以使用湿纺、熔纺或凝胶纺。纤维技术领域中的那些技术人员对所有技术都熟知。 
湿纺是最古老的工艺，可用于已溶解在溶剂中的形成纤维的物质。所述纺丝头浸没在化学浴中，且当出现细丝时，它们从溶液中析出并固化。因为所述溶液直接挤到所述沉析液中，这种制造纤维的方法称为湿纺。 
干纺也可以用于在溶液中形成纤维的物质。但是，它不是通过稀释或化学反应来析出所述聚合物，而是通过在空气或惰性气体流中蒸发所述溶剂来达到固化。所述细丝并不和沉析液接触，消除了对干燥的要求并便于溶剂回收。 
在熔纺中，熔化所述形成纤维的物质，通过纺丝头挤出，然后直接通过冷却进行固化。 
凝胶纺是用于获得高强度或其它特殊纤维性能的特殊方法。在挤出过程中所述聚合物并不是处于真正的液体状态。如同它们处于真正的溶液中那样，所述聚合物链不完全分离，而是从液晶形式在各点处粘结在一起。这在所得细丝中形成强链间作用力，可以显著提高所述纤维的拉伸强度。此外，所述液晶在挤出过程中通过剪切力沿纤维轴对齐。所述细丝以相互之间异常高的取向程度出现，进一步提高了其强度。这种方法也可以描述为干-湿纱纺，因为所述细丝首先经过空气，然后进一步在液体浴中冷却。 
用于本发明工艺中呈粉末状的导电金属材料是那些为电子工业中的技术人员所熟知的材料。合适的导电金属例子包括那些通常用于太阳能装置中的材料，如下：Au、Ni、Au/Cr、Au/Cu、Au/Ta、Cu/Cr、Au/氧化铟锡、Cu、Ag和Ni。Ag是优选的导电金属。 
优选含有70-80重量％导电金属颗粒的纤维或窄带材，虽然无机颗粒负载量高达90重量％是合适的。使无机固体负载量最大将会使纤维在燃烧过程中的收缩最小。但是所述聚合物含量必须保持足够高，以形成柔韧且均匀的纤维或窄带材。 
将所形成的纤维或窄带材粘附到太阳能电池表面(基底)上的方法可以为从手动放置到机械放置方式范围内的任何方法。所述太阳能电池表面可以是任何适合于太阳能电池制造的表面，但是优选的表面为加工后的硅晶片、CuInSe基底或者涂覆有无定形硅薄膜的基底、CD-In-Ga-Se、CdS、ZnS或CdTe。 
平铺所述纤维或窄带材之后，在第一加热阶段加热所述将粘附纤维或窄带材的太阳能电池结构至高于所述纤维或窄带材有机聚合物组分熔点以上的温度。这将所述无机材料/聚合物纤维或窄带材粘附到所述基底材料上。在另一实施方案中，所述热源可以和压板分开。 
在第二加热阶段充分或完全地烧尽所述纤维或窄带材的有机聚合物，使所述无机材料粘附到基底材料上。优选所述导电无机材料被烧结。所述燃烧温度曲线可以是在一个连续加热区域或者两个不连续加热阶段进行的两个加热阶段。例如，可以合并所述纤维和/或窄带材放置和起始加热阶段。在放置步骤中加热所述基底和/或纤维/窄带材可以用于将所述纤维/窄带材固定在基底上的所需位置。这将是形成功能特性的优选定位方法，此处不存在将所述纤维和/或窄带材固定在位的机械支持结构。另一供选的方法无需通过加热就可将纤维和/或窄带材粘结到位，它是在定位之前立即用溶剂蒸汽润湿所述纤维或基底表面(使纤维粘附到所述基底上)。 
更加具体的说，图1说明通过将导电材料的多重细纤维(101)放置到太阳能电池上的上表面金属化。 
所述纤维很窄，尺寸约为20-80微米宽。所述纤维可以作为圆条或矩形窄带材挤出。它们的纵横比通常约为1。 
所述纤维可以通过夹具如织机(102)放置，并定位在太阳能电池基底如加工后的晶体硅晶片(103)上。正确的定位需要精确地进行(如图1所示X-Y定位)。图1的截面图示于图2。在用加热后的 
Figure BYZ000000608122500041
板(201)挤压之前，图2将所述纤维定位在靠近硅晶片表面的位置。 
纤维数和间隔随太阳能电池装置的功能而变化。一些装置可以如图1所示在线路之间具有接近的间隔。一些装置可以在线路之间具有更宽的间隔。 
所述纤维放置是关键的操作。由于它们是易碎的，所述窄纤维需要有支撑。它们需要精确定位，以具有重复性能。 
一旦所述纤维置于电池上或以上，压板可以挤压和加热所述纤维，使它们粘附到所述电池表面(图2)。所述 板将不会咬住所述纤维，从而允许取出所述压板，而不会拖动纤维。在提升所述压板之前，通常会切割所述纤维。在另一实施方案中，在电池的下方可以使用单独的热源。 
所述电池在其上表面上具有SiNx(202)薄膜防反射涂层。在SiNx下是n+Si(203)(通常为具有高浓度Pn-型掺杂物的Si[用于负极发射极])漫射层。所述电池的基体为p-型Si(103)。 
图3显示当除去所述压板之后图2电池的截面。所述纤维(101)在挤压和加热过程中轻微变形，并已经粘附到SiNx层(202)的上部(电池的最外层)。 
图4说明在燃烧所述纤维(101)之后图3电池的截面。所述纤维通过穿透所述SiNx层(202)和所述n+Si层(203)接触。当所述SiNx是非导电层时，这一点是需要的。图4也说明了燃烧后保持相同X-Y位置的纤维。 
实施例
实施例1
如下所述制备含有银颗粒的光滑纤维形成糊剂。首先在100ml烧杯中用30ml四氯乙烯(TCE)浸泡5.0g 265乙烯/乙酸乙烯酯树脂(DuPont，Wilmington，DE)半小时。在用圆形带状加热装置包围的烧杯置于钟罩中。空气驱动搅拌器位于钟罩的中心，搅拌烧杯中的混合物。所述混合物加热至100℃，直到所述聚合物溶解。往所述溶液中加入15.0g银粉(银粉，正常尺寸～2微米D50[～0.5微米D10，～7微米D90]，从E.I.du Pont de Nemours andCompany，Wilmington，DE购得)和0.4g玻璃粉。搅拌约4小时。一旦所述混合物看起来很光滑，对钟罩抽真空，使所述混合物增稠直到获得可伸缩的粘度。然后用刮刀测试所述混合物，确保所述纤维可以从光滑稠密的糊剂中抽出。一旦获得光滑的流体混合物，它就可以转移到具有直径为～0.5mm的挤出用皮下注射针的塑料注射器。在将其挤出到 含氟聚合物薄片(DuPont，Wilmington，DE)上形成连续纤维时，所述糊剂必须保持在～80℃。可以获得100-300微米的纤维。所得纤维有弹性，并可以轻易进行处理而不会断裂，可以进一步加工。在所述挤出物的表层已经固化之前，若所述挤出物和所述 
Figure BYZ000000608122500054
含氟聚合物薄片(DuPont，Wilmington，DE)接触，就可以获得厚度低至50微米的薄窄带材。 
玻璃粉组成(以重量％计) 
Bi2O3       82.0 
Pb0         11.0 
B2O3        3.5 
Si02        3.5 
研磨成正常的S.A.，为5.5m2/g 
实施例2
将实施例1所得的银纤维粘附到硅晶片上，并在IR烘箱中在900℃(设定点)下燃烧。所述纤维并不保持其最初的尺寸。测得燃烧后的纤维为40微米×8微米高。 

Claims (6)

1.在太阳能电池结构制造中将纤维或窄带材粘附到基底以将无机材料转移到该基底的方法，所述方法包括以下步骤：
a)将包含混合有适于形成可纺分散体的聚合物的导电无机材料的纤维或窄带材以形成太阳能电池结构所需的取向粘附在基底上，其中，所述纤维或窄带材通过干纺、湿纺、熔纺或凝胶纺形成；和
b)将所述结构加热至能有效除去所述聚合物的温度，使无机材料以所需的取向粘附在所述基底上。
2.权利要求1所述的方法，其特征在于，所述无机材料是选自Au、Ni、Au/Cr、Au/Cu、Au/Ta、Cu/Cr、Au/氧化铟锡、Cu、Ag和Ni的导电金属颗粒。
3.权利要求1所述的方法，其特征在于，所述基底为硅晶片。
4.权利要求1所述的方法，其特征在于，所述方法还包括以下步骤：将所述结构加热至所述聚合物熔点以上的温度。
5.权利要求1所述的方法，其特征在于，所述纤维或窄带材沉积在该太阳能电池结构上，用作电极。
6.用于制造太阳能电池结构用特征构件的纤维或窄带材，所述纤维或窄带材包含混合有适于形成可纺分散体的聚合物的导电无机材料，且所述纤维或窄带材通过干纺、湿纺、熔纺或凝胶纺形成。
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Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002061791A2 (en) * 2001-01-29 2002-08-08 E. I. Du Pont De Nemours And Company Fibers or ribbons for use in the manufacture of structures in flat panel display
US20050051207A1 (en) * 2003-05-02 2005-03-10 Carroll Alan F. Fibers and ribbons for use in the manufacture of solar cells
US7618704B2 (en) * 2003-09-29 2009-11-17 E.I. Du Pont De Nemours And Company Spin-printing of electronic and display components
US8143326B2 (en) * 2004-09-28 2012-03-27 E.I. Du Pont De Nemours And Company Spin-printing of electronic and display components
US8252385B2 (en) * 2005-03-25 2012-08-28 E I Du Pont De Nemours And Company Spin-printing of electronic and display components
KR101043927B1 (ko) * 2008-10-23 2011-06-29 에스에스씨피 주식회사 태양 전지 및 그의 제조 방법
KR101148031B1 (ko) * 2010-08-11 2012-05-24 고려대학교 산학협력단 내부식성 태양전지 모듈
FR2999804B1 (fr) * 2012-12-18 2015-01-09 Commissariat Energie Atomique Dispositif d'interconnexion de cellules photovoltaiques a contacts en face arriere, et module comprenant un tel dispositif

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4388346A (en) * 1981-11-25 1983-06-14 Beggs James M Administrator Of Electrodes for solid state devices
US4643913A (en) * 1983-12-28 1987-02-17 Hitachi, Ltd. Process for producing solar cells
US4968738A (en) * 1989-04-06 1990-11-06 Quantum Materials, Inc. Silver-glass die attach paste with reduced resin
US5380371A (en) * 1991-08-30 1995-01-10 Canon Kabushiki Kaisha Photoelectric conversion element and fabrication method thereof

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3492167A (en) * 1966-08-26 1970-01-27 Matsushita Electric Ind Co Ltd Photovoltaic cell and method of making the same
US3666036A (en) * 1970-05-18 1972-05-30 Joseph Ernest Scerbo Trailing road arm system
US3982964A (en) * 1975-01-17 1976-09-28 Communications Satellite Corporation (Comsat) Dotted contact fine geometry solar cell
US4082568A (en) * 1977-05-10 1978-04-04 Joseph Lindmayer Solar cell with multiple-metal contacts
US4222977A (en) * 1978-05-16 1980-09-16 Monsanto Company Process to produce inorganic hollow fibers
US4347762A (en) * 1978-08-28 1982-09-07 Borg-Warner Corporation Planetary gear assembly
US4235644A (en) * 1979-08-31 1980-11-25 E. I. Du Pont De Nemours And Company Thick film silver metallizations for silicon solar cells
US4348458A (en) * 1980-09-08 1982-09-07 Monsanto Company Coiled inorganic monolithic hollow fibers
US4347262A (en) * 1980-11-26 1982-08-31 E. I. Du Pont De Nemours And Company Aluminum-magnesium alloys in low resistance contacts to silicon
JPS6199206A (ja) * 1984-10-19 1986-05-17 住友電気工業株式会社 導電用材料
US4826666A (en) * 1985-04-26 1989-05-02 Sri International Method of preparing metal carbides and the like and precursors used in such method
KR910005090B1 (en) * 1989-06-02 1991-07-22 Samsung Electronic Devices Method of making the spacer of display device
JPH0563218A (ja) * 1991-08-30 1993-03-12 Canon Inc 太陽電池及びその製造方法
JP2596279B2 (ja) * 1992-01-30 1997-04-02 双葉電子工業株式会社 外囲器の支柱形成方法
GB9224242D0 (en) 1992-11-19 1993-01-06 Rank Brimar Ltd Preparation of metal or oxide films
JP3050064B2 (ja) * 1994-11-24 2000-06-05 株式会社村田製作所 導電性ペースト、この導電性ペーストからなるグリッド電極が形成された太陽電池及びその製造方法
US5674634A (en) * 1994-12-05 1997-10-07 E. I. Du Pont De Nemours And Company Insulator composition, green tape, and method for forming plasma display apparatus barrier-rib
US5714840A (en) * 1995-03-07 1998-02-03 Asahi Glass Company Ltd. Plasma display panel
US5723945A (en) * 1996-04-09 1998-03-03 Electro Plasma, Inc. Flat-panel display
JPH10149763A (ja) 1996-11-18 1998-06-02 Dainippon Printing Co Ltd プラズマディスプレイパネル部材の製造方法
US5851732A (en) * 1997-03-06 1998-12-22 E. I. Du Pont De Nemours And Company Plasma display panel device fabrication utilizing black electrode between substrate and conductor electrode
JP3686749B2 (ja) * 1997-11-04 2005-08-24 太陽インキ製造株式会社 パターン状無機質焼成被膜及びプラズマディスプレイパネルの製造方法
JP3877024B2 (ja) 1998-04-13 2007-02-07 株式会社日立プラズマパテントライセンシング プラズマディスプレイパネルの蛍光体層形成方法と装置並びにそれらに用いるフィラメント状成形体とその成形体の製造方法
JP2003510758A (ja) 1999-04-26 2003-03-18 バイロン モワ チャド ファイバー・ベース・ディスプレー及びそれを製作する方法
JP2002094096A (ja) * 2000-09-18 2002-03-29 Canon Inc 光起電力素子用集電電極の製造方法
WO2002061791A2 (en) * 2001-01-29 2002-08-08 E. I. Du Pont De Nemours And Company Fibers or ribbons for use in the manufacture of structures in flat panel display

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4388346A (en) * 1981-11-25 1983-06-14 Beggs James M Administrator Of Electrodes for solid state devices
US4643913A (en) * 1983-12-28 1987-02-17 Hitachi, Ltd. Process for producing solar cells
US4968738A (en) * 1989-04-06 1990-11-06 Quantum Materials, Inc. Silver-glass die attach paste with reduced resin
US5380371A (en) * 1991-08-30 1995-01-10 Canon Kabushiki Kaisha Photoelectric conversion element and fabrication method thereof

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