JP4693492B2 - 光電変換装置およびそれを用いた光発電装置 - Google Patents
光電変換装置およびそれを用いた光発電装置 Download PDFInfo
- Publication number
- JP4693492B2 JP4693492B2 JP2005149125A JP2005149125A JP4693492B2 JP 4693492 B2 JP4693492 B2 JP 4693492B2 JP 2005149125 A JP2005149125 A JP 2005149125A JP 2005149125 A JP2005149125 A JP 2005149125A JP 4693492 B2 JP4693492 B2 JP 4693492B2
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- Prior art keywords
- semiconductor layer
- photoelectric conversion
- electrode
- layer
- semiconductor
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Photovoltaic Devices (AREA)
Description
10:粒状半導体
11:半導体層
16:他方の電極
19:基板
22:集電極
24:多孔質半導体層
31:一方の電極
32:多孔質絶縁体層
Claims (4)
- 一方の電極となる導電性基板上に、一導電型を呈する粒状半導体の焼結体からなる多孔質半導体層および逆導電型を呈する半導体層が順次積層されているとともに、該半導体層に他方の電極が接続されている光電変換装置であって、前記半導体層は、その一部が前記多孔質半導体層の内部の隙間に入り込んでおり、前記他方の電極上に導電性粒子から成る集電極が形成されているとともに、前記導電性粒子の平均粒径が前記粒状半導体の平均粒径よりも大きいことを特徴とする光電変換装置。
- 前記多孔質半導体層は、内部の隙間にさらに絶縁体が入り込んでいることを特徴とする請求項1記載の光電変換装置。
- 前記半導体層は、アモルファス半導体から成ることを特徴とする請求項1または請求項2記載の光電変換装置。
- 請求項1乃至請求項3のいずれかに記載の光電変換装置を発電手段として用い、該発電手段の発電電力を負荷へ供給するように成したことを特徴とする光発電装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005149125A JP4693492B2 (ja) | 2005-05-23 | 2005-05-23 | 光電変換装置およびそれを用いた光発電装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005149125A JP4693492B2 (ja) | 2005-05-23 | 2005-05-23 | 光電変換装置およびそれを用いた光発電装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006332095A JP2006332095A (ja) | 2006-12-07 |
JP4693492B2 true JP4693492B2 (ja) | 2011-06-01 |
Family
ID=37553514
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2005149125A Expired - Fee Related JP4693492B2 (ja) | 2005-05-23 | 2005-05-23 | 光電変換装置およびそれを用いた光発電装置 |
Country Status (1)
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JP (1) | JP4693492B2 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100927421B1 (ko) * | 2007-12-17 | 2009-11-19 | 삼성전기주식회사 | 구형 표면을 갖는 태양전지 및 그 제조방법 |
JP4948458B2 (ja) * | 2008-03-19 | 2012-06-06 | 三洋電機株式会社 | 太陽電池の製造方法及び太陽電池 |
JP5279599B2 (ja) * | 2009-04-27 | 2013-09-04 | 京セラ株式会社 | 光電変換セルおよび光電変換モジュール |
JP6479953B2 (ja) * | 2017-12-28 | 2019-03-06 | 京都エレックス株式会社 | 電子デバイス、および電子デバイス用無機粒子含有機能膜形成用組成物 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000091625A (ja) * | 1998-09-08 | 2000-03-31 | Digital Wave:Kk | 半導体装置製造用基板、その製造方法、及び、光電変換装置、その製造方法 |
-
2005
- 2005-05-23 JP JP2005149125A patent/JP4693492B2/ja not_active Expired - Fee Related
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000091625A (ja) * | 1998-09-08 | 2000-03-31 | Digital Wave:Kk | 半導体装置製造用基板、その製造方法、及び、光電変換装置、その製造方法 |
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JP2006332095A (ja) | 2006-12-07 |
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