CN1430790A - 利用快速热退火与氧化气体形成底部抗反射涂层的方法 - Google Patents
利用快速热退火与氧化气体形成底部抗反射涂层的方法 Download PDFInfo
- Publication number
- CN1430790A CN1430790A CN01809904A CN01809904A CN1430790A CN 1430790 A CN1430790 A CN 1430790A CN 01809904 A CN01809904 A CN 01809904A CN 01809904 A CN01809904 A CN 01809904A CN 1430790 A CN1430790 A CN 1430790A
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- China
- Prior art keywords
- thermal annealing
- annealing process
- quick thermal
- cvd
- gate dielectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
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- 150000001875 compounds Chemical group 0.000 claims description 6
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- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims description 6
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- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 239000010941 cobalt Substances 0.000 claims description 4
- 229910017052 cobalt Inorganic materials 0.000 claims description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 4
- 238000009616 inductively coupled plasma Methods 0.000 claims description 4
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- 239000011733 molybdenum Substances 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 claims description 4
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- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims 11
- 238000004151 rapid thermal annealing Methods 0.000 description 25
- 238000000059 patterning Methods 0.000 description 22
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- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229910002367 SrTiO Inorganic materials 0.000 description 2
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- 229910015900 BF3 Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 235000014653 Carica parviflora Nutrition 0.000 description 1
- 244000132059 Carica parviflora Species 0.000 description 1
- 235000002918 Fraxinus excelsior Nutrition 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
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- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000002956 ash Substances 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
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- 230000014509 gene expression Effects 0.000 description 1
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- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000000638 stimulation Effects 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28123—Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H01L21/0276—Photolithographic processes using an anti-reflective coating
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/942—Masking
- Y10S438/948—Radiation resist
- Y10S438/952—Utilizing antireflective layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/958—Passivation layer
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Description
Claims (11)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/577,706 | 2000-05-23 | ||
US09/577,706 US6794279B1 (en) | 2000-05-23 | 2000-05-23 | Passivating inorganic bottom anti-reflective coating (BARC) using rapid thermal anneal (RTA) with oxidizing gas |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1430790A true CN1430790A (zh) | 2003-07-16 |
CN1199240C CN1199240C (zh) | 2005-04-27 |
Family
ID=24309823
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB018099041A Expired - Fee Related CN1199240C (zh) | 2000-05-23 | 2001-05-09 | 利用快速热退火与氧化气体形成底部抗反射涂层的方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US6794279B1 (zh) |
EP (1) | EP1297563B1 (zh) |
JP (1) | JP2003534658A (zh) |
KR (1) | KR100698501B1 (zh) |
CN (1) | CN1199240C (zh) |
AU (1) | AU2001259717A1 (zh) |
DE (1) | DE60141692D1 (zh) |
WO (1) | WO2001091168A1 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109427541A (zh) * | 2017-08-29 | 2019-03-05 | 中芯国际集成电路制造(北京)有限公司 | 半导体器件的形成方法 |
CN111128885A (zh) * | 2018-10-31 | 2020-05-08 | 台湾积体电路制造股份有限公司 | 半导体装置和其形成方法 |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100458086B1 (ko) * | 2002-09-24 | 2004-11-26 | 주식회사 하이닉스반도체 | 반도체소자의 콘택 형성 방법 및 그를 이용한 피모스소자의 제조 방법 |
KR100562290B1 (ko) * | 2003-09-24 | 2006-03-22 | 동부아남반도체 주식회사 | 반도체 소자 제조 방법 |
US6852584B1 (en) * | 2004-01-14 | 2005-02-08 | Tokyo Electron Limited | Method of trimming a gate electrode structure |
US7176105B2 (en) * | 2004-06-01 | 2007-02-13 | Applied Materials, Inc. | Dielectric gap fill with oxide selectively deposited over silicon liner |
KR100596893B1 (ko) * | 2004-06-02 | 2006-07-04 | 주식회사 하이닉스반도체 | 반도체 소자의 게이트 전극 형성 방법 |
US7186622B2 (en) * | 2004-07-15 | 2007-03-06 | Infineon Technologies Ag | Formation of active area using semiconductor growth process without STI integration |
US7622374B2 (en) * | 2005-12-29 | 2009-11-24 | Infineon Technologies Ag | Method of fabricating an integrated circuit |
US20070275330A1 (en) * | 2006-05-25 | 2007-11-29 | International Business Machines Corporation | Bottom anti-reflective coating |
US7435671B2 (en) * | 2006-08-18 | 2008-10-14 | International Business Machines Corporation | Trilayer resist scheme for gate etching applications |
US8394724B2 (en) * | 2006-08-31 | 2013-03-12 | Globalfoundries Singapore Pte. Ltd. | Processing with reduced line end shortening ratio |
US8252640B1 (en) | 2006-11-02 | 2012-08-28 | Kapre Ravindra M | Polycrystalline silicon activation RTA |
US7838203B1 (en) | 2006-11-13 | 2010-11-23 | National Semiconductor Corporation | System and method for providing process compliant layout optimization using optical proximity correction to improve CMOS compatible non volatile memory retention reliability |
KR100818421B1 (ko) | 2006-12-27 | 2008-04-01 | 동부일렉트로닉스 주식회사 | 반도체 소자의 형성 방법 |
US7855146B1 (en) * | 2007-09-18 | 2010-12-21 | National Semiconductor Corporation | Photo-focus modulation method for forming transistor gates and related transistor devices |
US8785238B2 (en) | 2010-07-01 | 2014-07-22 | Panasonic Corporation | Nonvolatile memory element and method for manufacturing same |
WO2012140887A1 (ja) | 2011-04-14 | 2012-10-18 | パナソニック株式会社 | 不揮発性記憶素子およびその製造方法 |
US9024377B2 (en) * | 2011-12-14 | 2015-05-05 | Nanya Technology Corp. | Semiconductor device capable of reducing influences of adjacent word lines or adjacent transistors and fabricating method thereof |
CN113296355A (zh) * | 2021-05-17 | 2021-08-24 | 上海传芯半导体有限公司 | 一种掩模基版及其制备方法和光罩 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07115121B2 (ja) * | 1992-08-21 | 1995-12-13 | 島村工業株式会社 | 塗型剤塗布装置 |
US5431770A (en) * | 1993-10-13 | 1995-07-11 | At&T Corp. | Transistor gate formation |
JP3422580B2 (ja) * | 1994-12-16 | 2003-06-30 | 三菱電機株式会社 | 半導体装置の製造方法 |
US5908659A (en) * | 1997-01-03 | 1999-06-01 | Mosel Vitelic Inc. | Method for reducing the reflectivity of a silicide layer |
US6063698A (en) * | 1997-06-30 | 2000-05-16 | Motorola, Inc. | Method for manufacturing a high dielectric constant gate oxide for use in semiconductor integrated circuits |
US6133618A (en) * | 1997-08-14 | 2000-10-17 | Lucent Technologies Inc. | Semiconductor device having an anti-reflective layer and a method of manufacture thereof |
KR100266010B1 (ko) * | 1997-10-01 | 2000-09-15 | 김영환 | 캐패시터형성방법 |
JP3114710B2 (ja) * | 1998-11-30 | 2000-12-04 | 日本電気株式会社 | 強誘電体メモリ及びその製造方法 |
US6214683B1 (en) * | 1999-04-12 | 2001-04-10 | Advanced Micro Devices, Inc. | Process for fabricating a semiconductor device component using lateral metal oxidation |
US6287918B1 (en) * | 1999-04-12 | 2001-09-11 | Advanced Micro Devices, Inc. | Process for fabricating a metal semiconductor device component by lateral oxidization |
-
2000
- 2000-05-23 US US09/577,706 patent/US6794279B1/en not_active Expired - Lifetime
-
2001
- 2001-05-09 EP EP01933280A patent/EP1297563B1/en not_active Expired - Lifetime
- 2001-05-09 JP JP2001587467A patent/JP2003534658A/ja not_active Withdrawn
- 2001-05-09 AU AU2001259717A patent/AU2001259717A1/en not_active Abandoned
- 2001-05-09 KR KR1020027015848A patent/KR100698501B1/ko not_active IP Right Cessation
- 2001-05-09 CN CNB018099041A patent/CN1199240C/zh not_active Expired - Fee Related
- 2001-05-09 DE DE60141692T patent/DE60141692D1/de not_active Expired - Lifetime
- 2001-05-09 WO PCT/US2001/015131 patent/WO2001091168A1/en active Application Filing
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109427541A (zh) * | 2017-08-29 | 2019-03-05 | 中芯国际集成电路制造(北京)有限公司 | 半导体器件的形成方法 |
CN111128885A (zh) * | 2018-10-31 | 2020-05-08 | 台湾积体电路制造股份有限公司 | 半导体装置和其形成方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20030003760A (ko) | 2003-01-10 |
AU2001259717A1 (en) | 2001-12-03 |
EP1297563B1 (en) | 2010-03-31 |
US6794279B1 (en) | 2004-09-21 |
CN1199240C (zh) | 2005-04-27 |
WO2001091168A1 (en) | 2001-11-29 |
JP2003534658A (ja) | 2003-11-18 |
KR100698501B1 (ko) | 2007-03-22 |
EP1297563A1 (en) | 2003-04-02 |
DE60141692D1 (de) | 2010-05-12 |
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