AU2001259717A1 - Bottom anti-reflective coating using rapid thermal anneal with oxidizing gas - Google Patents

Bottom anti-reflective coating using rapid thermal anneal with oxidizing gas

Info

Publication number
AU2001259717A1
AU2001259717A1 AU2001259717A AU5971701A AU2001259717A1 AU 2001259717 A1 AU2001259717 A1 AU 2001259717A1 AU 2001259717 A AU2001259717 A AU 2001259717A AU 5971701 A AU5971701 A AU 5971701A AU 2001259717 A1 AU2001259717 A1 AU 2001259717A1
Authority
AU
Australia
Prior art keywords
oxidizing gas
reflective coating
rapid thermal
thermal anneal
bottom anti
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001259717A
Inventor
Jonathan Doan
Michael E. Exterkamp
Alan D. Stephen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Micro Devices Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of AU2001259717A1 publication Critical patent/AU2001259717A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28123—Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0276—Photolithographic processes using an anti-reflective coating
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist
    • Y10S438/952—Utilizing antireflective layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/958—Passivation layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
AU2001259717A 2000-05-23 2001-05-09 Bottom anti-reflective coating using rapid thermal anneal with oxidizing gas Abandoned AU2001259717A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09577706 2000-05-23
US09/577,706 US6794279B1 (en) 2000-05-23 2000-05-23 Passivating inorganic bottom anti-reflective coating (BARC) using rapid thermal anneal (RTA) with oxidizing gas
PCT/US2001/015131 WO2001091168A1 (en) 2000-05-23 2001-05-09 Bottom anti-reflective coating using rapid thermal anneal with oxidizing gas

Publications (1)

Publication Number Publication Date
AU2001259717A1 true AU2001259717A1 (en) 2001-12-03

Family

ID=24309823

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001259717A Abandoned AU2001259717A1 (en) 2000-05-23 2001-05-09 Bottom anti-reflective coating using rapid thermal anneal with oxidizing gas

Country Status (8)

Country Link
US (1) US6794279B1 (en)
EP (1) EP1297563B1 (en)
JP (1) JP2003534658A (en)
KR (1) KR100698501B1 (en)
CN (1) CN1199240C (en)
AU (1) AU2001259717A1 (en)
DE (1) DE60141692D1 (en)
WO (1) WO2001091168A1 (en)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100458086B1 (en) * 2002-09-24 2004-11-26 주식회사 하이닉스반도체 Method of forming contact in semiconductor device and fabrication method of pMOSFET using the same
KR100562290B1 (en) * 2003-09-24 2006-03-22 동부아남반도체 주식회사 Fabrication method of semiconductor device
US6852584B1 (en) * 2004-01-14 2005-02-08 Tokyo Electron Limited Method of trimming a gate electrode structure
US7176105B2 (en) * 2004-06-01 2007-02-13 Applied Materials, Inc. Dielectric gap fill with oxide selectively deposited over silicon liner
KR100596893B1 (en) * 2004-06-02 2006-07-04 주식회사 하이닉스반도체 Method for gate electrode of semiconductor device
US7186622B2 (en) * 2004-07-15 2007-03-06 Infineon Technologies Ag Formation of active area using semiconductor growth process without STI integration
US7622374B2 (en) * 2005-12-29 2009-11-24 Infineon Technologies Ag Method of fabricating an integrated circuit
US20070275330A1 (en) * 2006-05-25 2007-11-29 International Business Machines Corporation Bottom anti-reflective coating
US7435671B2 (en) * 2006-08-18 2008-10-14 International Business Machines Corporation Trilayer resist scheme for gate etching applications
US8394724B2 (en) * 2006-08-31 2013-03-12 Globalfoundries Singapore Pte. Ltd. Processing with reduced line end shortening ratio
US8252640B1 (en) 2006-11-02 2012-08-28 Kapre Ravindra M Polycrystalline silicon activation RTA
US7838203B1 (en) 2006-11-13 2010-11-23 National Semiconductor Corporation System and method for providing process compliant layout optimization using optical proximity correction to improve CMOS compatible non volatile memory retention reliability
KR100818421B1 (en) 2006-12-27 2008-04-01 동부일렉트로닉스 주식회사 Method for manufacturing semiconductor device
US7855146B1 (en) * 2007-09-18 2010-12-21 National Semiconductor Corporation Photo-focus modulation method for forming transistor gates and related transistor devices
WO2012001978A1 (en) * 2010-07-01 2012-01-05 パナソニック株式会社 Nonvolatile memory element and method for manufacturing same
CN103460383B (en) 2011-04-14 2016-01-06 松下电器产业株式会社 Non-volatile memory device and manufacture method thereof
US9024377B2 (en) * 2011-12-14 2015-05-05 Nanya Technology Corp. Semiconductor device capable of reducing influences of adjacent word lines or adjacent transistors and fabricating method thereof
CN109427541A (en) * 2017-08-29 2019-03-05 中芯国际集成电路制造(北京)有限公司 The forming method of semiconductor devices
US10840333B2 (en) * 2018-10-31 2020-11-17 Taiwan Semiconductor Manufacturing Company Limited Semiconductor arrangement and method of manufacture
CN113296355A (en) * 2021-05-17 2021-08-24 上海传芯半导体有限公司 Mask base plate and preparation method thereof and photomask

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07115121B2 (en) * 1992-08-21 1995-12-13 島村工業株式会社 Coating agent coating device
US5431770A (en) * 1993-10-13 1995-07-11 At&T Corp. Transistor gate formation
JP3422580B2 (en) * 1994-12-16 2003-06-30 三菱電機株式会社 Method for manufacturing semiconductor device
US5908659A (en) * 1997-01-03 1999-06-01 Mosel Vitelic Inc. Method for reducing the reflectivity of a silicide layer
US6063698A (en) * 1997-06-30 2000-05-16 Motorola, Inc. Method for manufacturing a high dielectric constant gate oxide for use in semiconductor integrated circuits
US6133618A (en) * 1997-08-14 2000-10-17 Lucent Technologies Inc. Semiconductor device having an anti-reflective layer and a method of manufacture thereof
KR100266010B1 (en) * 1997-10-01 2000-09-15 김영환 Method of fabricating capacitor
JP3114710B2 (en) * 1998-11-30 2000-12-04 日本電気株式会社 Ferroelectric memory and method of manufacturing the same
US6214683B1 (en) * 1999-04-12 2001-04-10 Advanced Micro Devices, Inc. Process for fabricating a semiconductor device component using lateral metal oxidation
US6287918B1 (en) * 1999-04-12 2001-09-11 Advanced Micro Devices, Inc. Process for fabricating a metal semiconductor device component by lateral oxidization

Also Published As

Publication number Publication date
KR20030003760A (en) 2003-01-10
DE60141692D1 (en) 2010-05-12
US6794279B1 (en) 2004-09-21
JP2003534658A (en) 2003-11-18
EP1297563B1 (en) 2010-03-31
WO2001091168A1 (en) 2001-11-29
KR100698501B1 (en) 2007-03-22
EP1297563A1 (en) 2003-04-02
CN1430790A (en) 2003-07-16
CN1199240C (en) 2005-04-27

Similar Documents

Publication Publication Date Title
AU2001259717A1 (en) Bottom anti-reflective coating using rapid thermal anneal with oxidizing gas
AU2001250491A1 (en) Gas diffusion substrate
AU2001278415A1 (en) Alpha-amylase mutants with altered stability
AU2001252014A1 (en) Photovoltaic cell
AU5268001A (en) Fuel cell
AU2002368042A1 (en) Photovoltaic cell
AU2001291953A1 (en) Substrate with photocatalytic coating
AU6016298A (en) Perfluoroether-containing fluoroelastomers with good low temperature characteristics
AU5438400A (en) Thrust vectoring techniques
AU2001237996A1 (en) Thermally and chemically treating cells
AU2001263736A1 (en) Outwall thermal insulation board
AU2001252015A1 (en) Photovoltaic cell
GB0027119D0 (en) Gas diffusion substrate
AU2000269395A1 (en) Photovoltaic building assembly with continuous insulation layer
AU2002360007A1 (en) Fuel cell
AU5037300A (en) Thermal insulation vessel
AU4390600A (en) High-temperature fuel cell
AU2001277029A1 (en) Glass article with anti-reflective coating
AU2002304886A1 (en) Fuel cell
AU2001240395A1 (en) Energy element with photovoltaic layer
AU2002223790A1 (en) Platform with controlled thermal expansion coefficient
AU2002319041A1 (en) Microchannel thermal reactor
AU2002216923A1 (en) Solar cell surface
AU2538201A (en) Engines with multipliers
AU2002224357A1 (en) Mammalian wnt polypeptide-5