CN1331736C - 过一硫酸氢钾溶液 - Google Patents

过一硫酸氢钾溶液 Download PDF

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Publication number
CN1331736C
CN1331736C CNB2004800088248A CN200480008824A CN1331736C CN 1331736 C CN1331736 C CN 1331736C CN B2004800088248 A CNB2004800088248 A CN B2004800088248A CN 200480008824 A CN200480008824 A CN 200480008824A CN 1331736 C CN1331736 C CN 1331736C
Authority
CN
China
Prior art keywords
solution
copper
water
composition
acid potassium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CNB2004800088248A
Other languages
English (en)
Chinese (zh)
Other versions
CN1768005A (zh
Inventor
T·P·塔法诺
M·B·科克西
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EIDP Inc
Original Assignee
EI Du Pont de Nemours and Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EI Du Pont de Nemours and Co filed Critical EI Du Pont de Nemours and Co
Publication of CN1768005A publication Critical patent/CN1768005A/zh
Application granted granted Critical
Publication of CN1331736C publication Critical patent/CN1331736C/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B15/00—Peroxides; Peroxyhydrates; Peroxyacids or salts thereof; Superoxides; Ozonides
    • C01B15/055—Peroxyhydrates; Peroxyacids or salts thereof
    • C01B15/06—Peroxyhydrates; Peroxyacids or salts thereof containing sulfur
    • C01B15/08—Peroxysulfates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/18—Acidic compositions for etching copper or alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
    • H05K3/382—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal
    • H05K3/383—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal by microetching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
    • H05K2203/0779—Treatments involving liquids, e.g. plating, rinsing characterised by the specific liquids involved
    • H05K2203/0786—Using an aqueous solution, e.g. for cleaning or during drilling of holes
    • H05K2203/0796—Oxidant in aqueous solution, e.g. permanganate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inorganic Chemistry (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • ing And Chemical Polishing (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Detergent Compositions (AREA)
  • Preventing Corrosion Or Incrustation Of Metals (AREA)
  • Weting (AREA)
CNB2004800088248A 2003-03-31 2004-03-31 过一硫酸氢钾溶液 Expired - Lifetime CN1331736C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/404,200 US6818142B2 (en) 2003-03-31 2003-03-31 Potassium hydrogen peroxymonosulfate solutions
US10/404,200 2003-03-31

Publications (2)

Publication Number Publication Date
CN1768005A CN1768005A (zh) 2006-05-03
CN1331736C true CN1331736C (zh) 2007-08-15

Family

ID=33096896

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2004800088248A Expired - Lifetime CN1331736C (zh) 2003-03-31 2004-03-31 过一硫酸氢钾溶液

Country Status (9)

Country Link
US (1) US6818142B2 (enExample)
EP (1) EP1608591A1 (enExample)
JP (1) JP4745221B2 (enExample)
KR (1) KR101069113B1 (enExample)
CN (1) CN1331736C (enExample)
CA (1) CA2517511A1 (enExample)
MY (1) MY138355A (enExample)
TW (1) TWI348993B (enExample)
WO (1) WO2004089817A1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7329365B2 (en) * 2004-08-25 2008-02-12 Samsung Electronics Co., Ltd. Etchant composition for indium oxide layer and etching method using the same
KR101191405B1 (ko) * 2005-07-13 2012-10-16 삼성디스플레이 주식회사 식각액 및 이를 이용한 액정 표시 장치의 제조 방법
US20070023364A1 (en) * 2005-07-28 2007-02-01 Felkner I C Tetrasilver Tetraoxide as Disinfective Agent for Cryptosporidium
US20070138109A1 (en) * 2005-12-21 2007-06-21 Tufano Thomas P Oxidizing composition for salt water
US7442323B2 (en) * 2006-06-02 2008-10-28 E. I. Du Pont De Nemours And Company Potassium monopersulfate solutions
WO2009026324A2 (en) * 2007-08-20 2009-02-26 Advanced Technology Materials, Inc. Composition and method for removing ion-implanted photoresist
KR20100133507A (ko) * 2008-05-01 2010-12-21 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 고밀도 주입된 레지스트의 제거를 위한 저 ｐｈ 혼합물
US20100252530A1 (en) * 2009-04-03 2010-10-07 E. I. Du Pont De Nemours And Company Etchant composition and method
TWI480360B (zh) * 2009-04-03 2015-04-11 Du Pont 蝕刻劑組成物及方法
JP5340071B2 (ja) * 2009-08-03 2013-11-13 株式会社Ａｄｅｋａ 安定剤を含むペルオキシ一硫酸水溶液の製造方法
CN102260871A (zh) * 2011-06-24 2011-11-30 李沛泓 印刷线路板微蚀刻剂
EP2572776A1 (en) * 2011-09-21 2013-03-27 Evonik Degussa GmbH Device for mixing and cooling two reactive liquids and method of making peroxomonosulphuric acid with the device
EP2572781A1 (en) 2011-09-21 2013-03-27 Evonik Degussa GmbH Device and method for making a dilute aqueous solution of peroxomonosulphuric acid
CN110172349B (zh) * 2019-05-08 2020-11-20 厦门大学 一种氮化镓半导体光电化学刻蚀液及加工方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5139763A (en) * 1991-03-06 1992-08-18 E. I. Du Pont De Nemours And Company Class of stable potassium monopersulfate compositions
US5855805A (en) * 1996-08-08 1999-01-05 Fmc Corporation Microetching and cleaning of printed wiring boards
JP2000064067A (ja) * 1998-06-09 2000-02-29 Ebara Densan Ltd エッチング液および銅表面の粗化処理方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE106331C (enExample)
US2500881A (en) * 1949-05-10 1950-03-14 Stader William Hanger support
BE579110A (enExample) 1958-05-29
US3048546A (en) 1959-02-24 1962-08-07 Du Pont Bleaching compositions
US3041139A (en) * 1960-06-24 1962-06-26 Du Pont Method of preparing monopersulfate composition containing the triple salt khso4?k2so4?2khso5
EP0149329B1 (en) * 1983-12-30 1992-04-15 E.I. Du Pont De Nemours And Company Potassium monopersulfate compositions and process for preparing them
US4579725A (en) 1983-12-30 1986-04-01 E. I. Du Pont De Nemours And Company Potassium monopersulfate compositions and process for preparing them
DE3427119A1 (de) 1984-07-23 1986-01-23 Peroxid-Chemie GmbH, 8023 Höllriegelskreuth Verfahren zur herstellung von kaliumpermonosulfat-tripelsalz
DE3914827C2 (de) 1989-05-05 1995-06-14 Schuelke & Mayr Gmbh Flüssiges Desinfektionsmittelkonzentrat
DE19503900C1 (de) 1995-02-07 1995-11-23 Degussa Verfahren zur Herstellung des Kaliumperoxomonosulfat-Tripelsalzes 2 KHSO¶5¶ . KHSO¶4¶ . K¶2¶SO¶4¶
WO1998004646A1 (en) * 1996-07-25 1998-02-05 Ekc Technology, Inc. Chemical mechanical polishing composition and process
JP3094392B2 (ja) * 1997-12-10 2000-10-03 株式会社荏原電産 エッチング液
US6200454B1 (en) 1997-12-24 2001-03-13 Mitsubishi Gas Chemical Company, Inc. Process for producing sodium persulfate
US6255117B1 (en) 1999-06-04 2001-07-03 Lamotte Company Method and device for determining monopersulfate
JP3974305B2 (ja) * 1999-06-18 2007-09-12 エルジー フィリップス エルシーディー カンパニー リミテッド エッチング剤及びこれを用いた電子機器用基板の製造方法と電子機器

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5139763A (en) * 1991-03-06 1992-08-18 E. I. Du Pont De Nemours And Company Class of stable potassium monopersulfate compositions
US5855805A (en) * 1996-08-08 1999-01-05 Fmc Corporation Microetching and cleaning of printed wiring boards
JP2000064067A (ja) * 1998-06-09 2000-02-29 Ebara Densan Ltd エッチング液および銅表面の粗化処理方法

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
纸浆回收用的新化学药品-Oxone杜邦公司产品介绍 雷金选，国际造纸，第14卷第6期 1995 *
过一硫酸盐化合物 王郁文等，日用化学品科学，第5期 1994 *
过硫酸氢钾复盐的合成研究 林海涛等，云南化工，第2期 1997 *

Also Published As

Publication number Publication date
CN1768005A (zh) 2006-05-03
KR101069113B1 (ko) 2011-09-30
US6818142B2 (en) 2004-11-16
WO2004089817A1 (en) 2004-10-21
JP2006522003A (ja) 2006-09-28
MY138355A (en) 2009-05-29
CA2517511A1 (en) 2004-10-21
KR20060013493A (ko) 2006-02-10
JP4745221B2 (ja) 2011-08-10
TWI348993B (en) 2011-09-21
EP1608591A1 (en) 2005-12-28
US20040197261A1 (en) 2004-10-07
TW200502159A (en) 2005-01-16

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